Patents Assigned to SAMSUNG ELECTRONIC CO.
  • Patent number: 11889008
    Abstract: An electronic device is provided.
    Type: Grant
    Filed: October 18, 2021
    Date of Patent: January 30, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jongmin Kang, Yunsik Kim, Jungwon Park, Seungchul Baek, Suman Lee, Chijoon Kim
  • Patent number: 11886022
    Abstract: There is provided a beam expander including a first optical element, a second optical element, a composite waveguide including a plurality of waveguide elements, and a dichroic coating provided between the plurality of waveguide elements. The first optical element inputs a collimated incident beam from the outside into the composite waveguide, and the second optical element outputs, from the composite waveguide, collimated incident beam, input to the composite waveguide, wherein the collimated incident beam input into the composite waveguide is divided into multiple wavefronts by the dichroic coating, and the multiple wavefronts are mixed by total internal reflection in the composite waveguide. When the beam expander is used, coherency and collimation of an output beam may be maintained and speckles may be reduced or eliminated while improving the efficiency of an optical system.
    Type: Grant
    Filed: November 5, 2021
    Date of Patent: January 30, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Aleksander V. Morozov, Sergey E. Dubynin, German B. Dubinin, Chilsung Choi, Hongseok Lee, Hoon Song
  • Patent number: 11886985
    Abstract: A processor-implemented data processing method includes: generating compressed data of first matrix data based on information of a distance between valid elements included in the first matrix data; fetching second matrix data based on the compressed data; and generating output matrix data based on the compressed data and the second matrix data.
    Type: Grant
    Filed: July 28, 2022
    Date of Patent: January 30, 2024
    Assignees: Samsung Electronics Co., Ltd., Seoul National University R&DB Foundation
    Inventors: Yuhwan Ro, Byeongho Kim, Jaehyun Park, Jungho Ahn, Minbok Wi, Sunjung Lee, Eojin Lee, Wonkyung Jung, Jongwook Chung, Jaewan Choi
  • Patent number: 11886238
    Abstract: According to various embodiments, an electronic device includes: a hinge; a foldable housing including a first housing connected to the hinge and has a first surface facing a first direction and a second surface facing a second direction that is opposite to the first direction, and a second housing connected to the hinge has a third surface facing a third direction and a fourth surface facing a fourth direction that is opposite to the third direction, and is folded about the hinge to overlap the first housing; a flexible display disposed inside the foldable housing and extending from above the first surface of the first housing onto the third surface of the second housing; and a touch panel disposed adjacent to the flexible display, wherein the touch panel includes a first touch panel disposed on the first surface and a second touch panel disposed on the third surface.
    Type: Grant
    Filed: October 22, 2021
    Date of Patent: January 30, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kwangho Shin, Hyosung Kang, Minsoo Kim, Yongwoon Kim, Myeongsil Park, Sangyup Lee, Jinwan An
  • Patent number: 11886783
    Abstract: Provided is a simulation method performed by a process simulator, implemented with a recurrent neural network (RNN) including a plurality of process emulation cells, which are arranged in time series and configured to train and predict, based on a final target profile, a profile of each process step included in a semiconductor manufacturing process. The simulation method includes: receiving, at a first process emulation cell, a previous output profile provided at a previous process step, a target profile and process condition information of a current process step; and generating, at the first process emulation cell, a current output profile corresponding to the current process step, based on the target profile, the process condition information, and prior knowledge information, the prior knowledge information defining a time series causal relationship between the previous process step and the current process step.
    Type: Grant
    Filed: January 12, 2023
    Date of Patent: January 30, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sanghoon Myung, Hyunjae Jang, In Huh, Hyeon Kyun Noh, Min-Chul Park, Changwook Jeong
  • Patent number: 11889356
    Abstract: The present disclosure relates to a communication method and system for converging a 5th-Generation (5G) communication system for supporting higher data rates beyond a 4th-Generation (4G) system with a technology for Internet of Things (IoT). The present disclosure may be applied to intelligent services based on the 5G communication technology and the IoT-related technology, such as smart home, smart building, smart city, smart car, connected car, health care, digital education, smart retail, security and safety services. There is provided a method for data retransmission, comprising: receiving, by a second node, a first message that is transmitted by a first node and comprises information related to a data packet; determining, by the second node, a data packet to be retransmitted according to the first message; and retransmitting the packet to be retransmitted.
    Type: Grant
    Filed: August 9, 2019
    Date of Patent: January 30, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Weiwei Wang, Lixiang Xu, Hong Wang
  • Patent number: 11887574
    Abstract: A controlling method of a wearable electronic apparatus includes: receiving, by an IMU sensor, a bone conduction signal corresponding to vibration in the user's face, while the wearable electronic apparatus is operated in an ANC mode; identifying a presence or an absence of the user's voice based on the bone conduction signal; based on the identifying the presence of the user's voice, controlling an operation mode of the wearable electronic apparatus to be a different operation mode from the ANC mode; while the wearable electronic apparatus is operated in the different operation mode, identifying presence or absence of the user's voice based on the bone conduction signal; and based on the absence of the user's voice being identified for a predetermined time while the wearable electronic apparatus is operated in the different operation mode, controlling the different operation mode to return to the ANC mode.
    Type: Grant
    Filed: January 18, 2022
    Date of Patent: January 30, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Hosang Sung, Lei Yang, Jonguk Yoo, Jonghoon Jeong, Kihyun Choo
  • Patent number: 11888059
    Abstract: Provided is a field effect transistor (FET) including a gradually varying composition channel. The FET includes: a drain region; a drift region on the drain region; a channel region on the drift region; a source region on the channel region; a gate penetrating the channel region and the source region in a vertical direction; and a gate oxide surrounding the gate. The channel region has a gradually varying composition along the vertical direction such that an intensity of a polarization in the channel region gradually varies.
    Type: Grant
    Filed: June 16, 2021
    Date of Patent: January 30, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Injun Hwang, Jongseob Kim, Joonyong Kim, Younghwan Park, Junhyuk Park, Dongchul Shin, Jaejoon Oh, Soogine Chong, Sunkyu Hwang
  • Patent number: 11888236
    Abstract: Disclosed in various embodiments of the present invention are a method and a device, the device comprising: an antenna module configured to form a plurality of beams having different directions; and a processor operatively connected to the antenna module, wherein the processor is configured to select a partial reception beam from among a plurality of reception beams, measure the reception power of the selected reception beam, determine a transmission condition through an artificial neural network on the basis of the measured reception power, and determine a reception beam for a communication connection by using the artificial neural network corresponding to the transmission condition. Various embodiments are possible.
    Type: Grant
    Filed: September 26, 2019
    Date of Patent: January 30, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yongsang Cho, Taeyoon Kim, Chaeman Lim, Hyoungjoo Lee
  • Patent number: 11887989
    Abstract: A semiconductor device includes a first transistor including a first channel layer of a first conductivity type, a second transistor provided in parallel with the first transistor and including a second channel layer of a second conductivity type, and a third transistor stacked on the first and second transistors. The third transistor may include a gate insulating film including a ferroelectric material. The third transistor may include third channel layer and a gate electrode that are spaced apart from each other in a thickness direction with the gate insulating film therebetween.
    Type: Grant
    Filed: July 30, 2020
    Date of Patent: January 30, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sangwook Kim, Jinseong Heo, Yunseong Lee, Sanghyun Jo
  • Patent number: 11888101
    Abstract: A display panel is disclosed. The disclosed display panel includes a thin film transistor substrate, a plurality of micro LEDs arranged on one surface of the thin film transistor substrate, a plurality of first connection pads disposed on the one surface of the thin film transistor substrate, a plurality of second connection pads disposed on the other surface of the thin film transistor substrate that faces the one surface, and a plurality of connection wirings disposed on a side surface of the thin film transistor substrate for electrically connecting each of the plurality of first connection pads and the plurality of second connection pads, wherein at least one of an edge region on the one surface and an edge region on the other surface of the thin film transistor substrate includes a cutting area which is cut in an inward direction of the thin film transistor substrate.
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: January 30, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Youngki Jung, Jinho Kim, Dongmyung Son, Sangmin Shin, Changjoon Lee, Kyungwoon Jang, Seongphil Cho, Gyun Heo, Soonmin Hong
  • Patent number: 11887698
    Abstract: Systems and methods for building a comprehensive genome scale metabolic model. The method includes determining that at least one of a hypothetical profile annotation and an uncharacterized profile annotation is available in a profile annotation associated with a protein. Further, the method includes performing a machine learning procedure on at least one of the hypothetical profile annotation and the uncharacterized hypothetical profile annotation after a fuzzy string matching and ranking procedure. Further, the method includes obtaining all the possible protein annotations based on a fuzzy string matching procedure. Further, the method includes performing a rank procedure on at least one of the hypothetical profile annotation and the uncharacterized profile alternative annotation. Further, the method includes identifying all possible metabolic reactions for the protein annotation obtained by the fuzzy string matching procedure.
    Type: Grant
    Filed: September 29, 2020
    Date of Patent: January 30, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Rajasekhara Reddy Duvvuru Muni, Tadi Venkata Siva Kumar, Taeyong Kim
  • Patent number: 11888654
    Abstract: An offset detector circuit includes a digital signal register storing M unit digital signals received in latest M signal periods, M being a natural number, among digital signals generated based on a single-ended PAM-N signal, N being an odd number, a comparator outputting a comparison signal of a pair of signals included in differential signals generated from a differential signal generator based on the single-ended PAM-N signal, a comparison result register storing M unit comparison signals corresponding to the latest M signal periods among the comparison signals, a pattern detector outputting a detection signal when the M unit digital signals match a predetermined signal pattern, and an offset checker checking patterns of the M unit comparison signals in response to the detection signal, and outputting an offset detection signal when the patterns of the M unit comparison signals match a predetermined offset pattern.
    Type: Grant
    Filed: August 30, 2022
    Date of Patent: January 30, 2024
    Assignees: SAMSUNG ELECTRONICS CO., LTD., NANYANG TECHNOLOGICAL UNIVERSITY
    Inventors: Jueon Kim, Taehyoung Kim, Seungjin Park, Jihwan Hyun, Myoungbo Kwak, Junghwan Choi
  • Patent number: 11889467
    Abstract: A communication technique for convergence of internet of thing (IoT) technology and a 5th generation (5G) communication system for supporting a higher data transfer rate beyond a 4th generation (4G) system, and a system therefor are provided. The disclosure can be applied to intelligent services (e.g., smart homes, smart buildings, smart cities, smart or connected cars, health care, digital education, retail business, and services associated with security and safety) on the basis of 5G communication technology and IoT-related technology. The disclosure provides a paging monitoring method according to a state of a terminal and a method for reporting a connection setup failure in consideration of an inactive state of the terminal.
    Type: Grant
    Filed: December 27, 2022
    Date of Patent: January 30, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: June Hwang, Soenghun Kim, Sangyeob Jung
  • Patent number: 11889703
    Abstract: A magnetic junction memory device is provided. The magnetic junction memory device including a sensing circuit including a sensing node, the sensing node being connected to a first end of a transistor and configured to change a voltage of the sensing node in accordance with a resistance of a magnetic junction memory cell, a gating voltage generator circuit configured to generate a gating voltage of the transistor using a reference resistor and a reference voltage, and a read circuit configured to read data from the magnetic junction memory cell using the reference voltage and the voltage of the sensing node.
    Type: Grant
    Filed: October 27, 2022
    Date of Patent: January 30, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Chan Kyung Kim, Eun Ji Lee, Ji Yean Kim, Tae Seong Kim, Jae Wook Joo
  • Patent number: 11886747
    Abstract: A controller includes a central processing unit (CPU) configured to insert a latest received logical address, received together with a write command and data from a host, into a logical address list; a hotness determining circuit configured to assign a maximum weight to the latest received logical address, decrease weights of received logical addresses included in the logical address list by a decay factor, and sum weights of the received logical addresses having values, equal to a value of the latest received logical address, to determine hotness of the latest received logical address; and a parameter adjustment circuit decreasing a magnitude of the decay factor based on the repeatability index of the received logical addresses included in the logical address list, wherein the CPU is configured to control the memory device to store the data in one of the memory regions based on the hotness.
    Type: Grant
    Filed: May 11, 2022
    Date of Patent: January 30, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Chanha Kim, Gyeongmin Nam, Seungryong Jang
  • Patent number: 11887957
    Abstract: Disclosed is a semiconductor device comprising a semiconductor substrate, an under-bump pattern on the semiconductor substrate and including a first metal, a bump pattern on the under-bump pattern, and an organic dielectric layer on the semiconductor substrate and in contact with a sidewall of the bump pattern. The bump pattern includes a support pattern in contact with the under-bump pattern and having a first width, and a solder pillar pattern on the support pattern and having a second width. The first width is greater than the second width. The support pattern includes at least one of a solder material and an intermetallic compound (IMC). The intermetallic compound includes the first metal and the solder material.
    Type: Grant
    Filed: December 7, 2022
    Date of Patent: January 30, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jubin Seo, Sujeong Park, Kwangjin Moon, Myungjoo Park
  • Patent number: 11888687
    Abstract: The disclosure relates to a 5G or 6G communication system for supporting a higher data transmission rate. A method of operating a management service (MnS) in a communication system supporting a plurality of architectures according to an embodiment of the present disclosure includes identifying an architecture supported by a first instance which is running and a list of functions for the architecture, determining whether to use the first instance based on a result of the identification and a requirement for service provision, and terminating the first instance and generating a second instance in case that the MnS determines not to use the first instance.
    Type: Grant
    Filed: March 28, 2022
    Date of Patent: January 30, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Sungryeul Rhyu, Hyunkoo Yang, Hakju Lee
  • Patent number: D1012894
    Type: Grant
    Filed: March 30, 2022
    Date of Patent: January 30, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sungil Bang, Jigwang Kim, Junpyo Kim, Jeewon Kim
  • Patent number: D1012914
    Type: Grant
    Filed: February 24, 2022
    Date of Patent: January 30, 2024
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Namkyu Kim, Bumsoo Park