Abstract: A package includes a lower substrate, a lower chip provided on the lower substrate, posts provided on an edge of the lower substrate and outside of the lower chip, an upper substrate provided on the posts and the lower chip, the upper substrate including a cavity formed on a bottom surface of the upper substrate, and a crack stiffener provided at an edge of the cavity, where the crack stiffener is configured to reduce formation of a crack in the upper substrate.

Abstract: The present disclosure provides for semiconductor devices including field effect transistors. In some embodiments, the semiconductor device includes active structures extending in a first direction on a substrate, an isolation pattern formed in a trench between the active structures, gate structures extending in a second direction across the active structures, a cutting insulation pattern formed between end portions of the gate structures in the second direction, and a lower impurity region at an upper portion of the isolation pattern. A first shape of a lower portion of the cutting insulation pattern disposed under an uppermost surface of the isolation pattern is different from a second shape of a lower portion of the gate structures disposed under the uppermost surface of the isolation pattern. The gate structures are formed on the active structures and the isolation pattern. The lower impurity region contacts at least a portion of the cutting insulation pattern.

Abstract: An exhaust method of a substrate processing apparatus, includes: measuring a first flow rate for each of process gases included in a mixed gas supplied to a process chamber; determining, based on the first flow rate, a lower explosion limit of the mixed gas and a first volume percentage of a combustible process gas among the process gases; determining a supply flow rate of a first dilution gas based on the first volume percentage and the lower explosion limit; and supplying, at the determined supply flow rate of the first dilution gas, the first dilution gas to the mixed gas in the process chamber.

Abstract: An electronic device includes: a wireless charging circuit; at least one sensor; and at least one processor operatively connected to the wireless charging circuit and the at least one sensor. The at least one processor is configured to: perform charging using the wireless charging circuit; sense a temperature of the electronic device via the at least one sensor; control, based on the temperature of the electronic device, heat generation during the charging; and change a charging condition based on a charging duration time determined based on the heat controlled by the at least one processor.

Abstract: An image sensor comprises a substrate having first and second surfaces opposite to each other, a fixed charge layer in contact with the second surface, an interlayer dielectric layer covering the first surface, a device isolation part adjacent to the first surface in the substrate, and a pixel isolation part in the substrate. The pixel isolation part includes a conductive pattern, a buried dielectric pattern, and an isolation dielectric pattern that is simultaneously in contact with the fixed charge layer and the interlayer dielectric layer. The isolation dielectric layer has a first thickness at a level between the buried dielectric pattern and the conductive pattern. The isolation dielectric layer has a second thickness at a level of a bottom surface of the fixed charge layer. The second thickness is different from the first thickness.

Abstract: A display apparatus includes: an optical member; a substrate provided at a rear side of the optical member, the substrate including a through-hole and a circuit pattern on a front surface of the substrate; a metal structure provided at a rear side of the substrate; and a supporter provided on the front surface of the substrate, wherein the supporter includes: a body supporting the optical member, the body being provided on the front surface of the substrate and aligned with the through-hole; a circuit pattern portion provided on the body and electrically connected to the circuit pattern on the front surface of the substrate; and a metal portion extending from a bottom surface of the body into the through-hole in a direction toward the metal structure, the metal portion being electrically connected to the circuit pattern portion and the metal structure.

Abstract: A semiconductor device includes a peripheral circuit structure including circuits, wiring layers, and via contacts, a plate common source line covering the peripheral circuit structure, an insulating plug passing through the plate common source line, a lateral insulating spacer between the peripheral circuit structure and the plate common source line, a memory stack structure including gate lines on the plate common source line, a through contact passing through at least one of the gate lines and the insulating plug, the through contact being connected to a first via contact of the via contacts, and a source line contact passing through the lateral insulating spacer, the source line contact being between a second via contact of the via contacts and the plate common source line, wherein a width of the first via contact is greater than a width of the insulating plug in a lateral direction.

Abstract: Disclosed are a semiconductor device and a method of fabricating the same. The device may include a substrate, an active pattern in an upper portion of the substrate and is extending in a first direction, a gate electrode crossing the active pattern and extending in a second direction intersecting the first direction, a first gate spacer covering a side surface of the gate electrode, a first inhibition layer between the gate electrode and the first gate spacer, and a gate insulating layer between the gate electrode and the active pattern. The gate insulating layer may include a high-k dielectric layer and a gate oxide layer. The gate oxide layer may be between the high-k dielectric layer and the active pattern. The high-k dielectric layer may be between the gate oxide layer and the gate electrode.

Abstract: A semiconductor chip stack structure may include a buffer chip, a first memory chip on the buffer chip and including a plurality of first banks, a second memory chip on the first memory chip and including a plurality of second banks, first chiplets between the first memory chip and the second memory chip and configured to perform calculations on data stored in the plurality of first banks of the first memory chip, second chiplets between the first memory chip and the second memory chip and configured to perform calculations on data stored in the plurality of second banks of the second memory chip, and a third memory chip on the buffer chip. The third memory chip may include a plurality of third banks. The third memory chip may be electrically connected to the first memory chip and the second memory chip.

Abstract: A semiconductor device includes a capacitor including a lower electrode an upper electrode, and a dielectric layer between the lower electrode and the upper electrode. The lower electrode includes ABO3 where ‘A’ is a first metal element and ‘B’ is a second metal element having a work function greater than that of the first metal element. The dielectric layer includes CDO3 where ‘C’ is a third metal element and ‘D’ is a fourth metal element. The lower electrode includes a first layer and a second layer which are alternately and repeatedly stacked. The first layer includes the first metal element and oxygen. The second layer includes the second metal element and oxygen. The dielectric layer is in contact with the lower electrode at a first contact surface the first contact surface corresponding to the second layer.

Abstract: A wafer-type sensor for wafer alignment includes a dummy wafer; a sensor module disposed in the dummy wafer, and a processor configured to control the sensor module to measure a distance between a side surface of the dummy wafer and a ring formed around a periphery of an electrostatic chuck based on the dummy wafer being mounted on the electrostatic chuck by a transfer robot.

Abstract: A method for processing image data may include: obtaining a raw input image that is captured under an input illumination; obtaining a target illumination from a user input; obtaining an intermediate image having colors captured under a reference illumination, from the raw input image, based on a first color transform that maps the input illumination to the reference illumination in an illumination dataset of raw sensor images that are captured under a plurality of different illuminations; and obtaining an output image having colors captured under the target illumination, from the intermediate image, based on a second color transform that maps the reference illumination in the illumination dataset to the target illumination.

Abstract: An operating method of a first device communicating with a second device in a wireless local area network (WLAN), includes: receiving, from the second device, a physical layer protocol data unit (PPDU) including a payload that includes a trigger frame; preparing an uplink beamforming matrix based on a value of an uplink beamforming-related first sub-field included in a preamble of the PPDU; beamforming, according to the uplink beamforming matrix, the PPDU; and transmitting the beamformed PPDU to the second device based on a value of an uplink beamforming-related second sub-field included in the trigger frame.

Abstract: A substrate including a base substrate and first to fourth identification codes on the base substrate, wherein the substrate is one of a plurality of substrates at a row ‘c’ and a column ‘d’ in a (b)th strip of an (a)th panel, where ‘a’, ‘b’, ‘c’ and ‘d’ are natural numbers, the plurality of substrates being included in the (b)th strip of the (a)th panel, the first identification code includes information on the ‘a’, the second identification code includes information on the ‘b’, the third identification code includes information on the ‘c’, and the fourth identification code includes information on the ‘d’, may be provided.

Abstract: A direct-current (DC)-DC converter includes a converting circuit including an inductor element. The converting circuit is configured to generate an output voltage from an input voltage based on a switching operation. An inductor current emulator is configured to adjust at least one parameter for changing a current peak value of the inductor element in response to a change in a level of the input voltage and is configured to generate an internal voltage based on the at least one parameter, which is adjusted. The inductor current emulator is configured to generate a control signal for controlling the switching operation such that current of the inductor element has a pattern corresponding to a pattern of the internal voltage.

Abstract: A memory device performs a multiplication operation using a multiplying cell including a memory cell and a switching element, in which the memory cell includes a pair of inverters connected to each other in opposite directions, a first transistor connected to one end of the pair of inverters, and a second transistor connected to the other end of the pair of inverters, and has a set weight; and the switching element is connected to an output end of the memory cell and configured to perform switching in response to an input value and output a signal corresponding to a multiplication result between the input value and the weight.

Abstract: A lens includes at least one lens element configured to interface with a user's pupil along an optical-axis direction from a side of the user's pupil to a side of a display surface. The at least one lens element defines an aperture stop that is configured to be at least a portion of an area for facing the user's pupil. The aperture stop defines a plurality of sub-stop areas corresponding to a plurality of gaze directions within an entire viewing angle of the user with respect to the optical-axis direction. An orientation of the plurality of sub-stop areas are based on a human visual system.

Abstract: A semiconductor device may include at least one first two-dimensional material layer; a source electrode and a drain electrode that are respectively on both sides of the at least one first two-dimensional material layer; second two-dimensional material layers respectively on a side of the source electrode and a side of the drain electrode and connected to the at least one first two-dimensional material layer; a gate insulating layer surrounding the at least one first two-dimensional material layer; and a gate electrode on the gate insulating layer.

Abstract: Provided is a system to provide natural utterance by a voice assistant and method thereof, wherein the system comprises an automatic speech recognition module for converting one or more unsegmented voice inputs into textual format in real-time. Further, a natural language understanding module extracts the information and intent of the user from the converted textual inputs, wherein the natural language understanding module comprises a communication classification unit for classifying the user inputs into one or more pre-defined classes. Further, the system comprises a processing module for analyzing and processing the inputs from the natural language understanding module and activity identification module, wherein the processing module provides real-time intuitive mingling responses based on the responses, contextual pauses and ongoing activity of the user.

Abstract: A docking station for a robotic vacuum cleaner may include a docking unit having a traveling path for the robotic vacuum cleaner to enter the docking station and travel to a mopping cloth attachment position where a mopping cloth is attachable to the vacuum cleaner. The docking station also includes a mopping cloth supply unit disposed above the docking unit and configured to receive a plurality of mopping cloths, and the plurality of mopping cloths are side by side along a horizontal direction. The mopping cloth supply unit may include a mopping cloth transporting unit that are configured so that the mopping cloth transporting unit sequentially transports each mopping cloth of the plurality of mopping cloths received by the mopping cloth supply unit along the horizontal direction to an outlet to be discharged through the outlet to the mopping cloth attachment position.