Patents Assigned to Samsung Electronics
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Patent number: 11763799Abstract: An electronic apparatus and a controlling method thereof are provided. The electronic apparatus includes a microphone; a memory configured to store a text-to-speech (TTS) model and a plurality of evaluation texts; and a processor configured to: obtain a first reference vector of a user speech spoken by a user based the user speech being received through the microphone, generate a plurality of candidate reference vectors based on the first reference vector, obtain a plurality of synthesized sounds by inputting the plurality of candidate reference vectors and the plurality of evaluation texts to the TTS model, identify at least one synthesized sound of the plurality of synthesized sounds based on a similarity between characteristics of the plurality of synthesized sounds and the user speech, and store a second reference vector of the at least one synthesized sound in the memory as a reference vector corresponding to the user for the TTS model.Type: GrantFiled: December 17, 2021Date of Patent: September 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sangjun Park, Kyoungbo Min, Kihyun Choo, Seungdo Choi
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Patent number: 11764279Abstract: A semiconductor device include a substrate including a peripheral region, a first active pattern provided on the peripheral region of the substrate, the first active pattern having an upper portion including first semiconductor patterns and second semiconductor patterns which are alternately stacked, a first gate electrode intersecting the first active pattern, a pair of first source/drain patterns provided at both sides of the first gate electrode, respectively, and a first gate insulating layer disposed between the first gate electrode and the first active pattern. The first gate insulating layer includes a first insulating layer formed on the first active pattern, a second insulating layer formed on the first insulating layer, and a high-k dielectric layer formed on the second insulating layer. The first gate insulating layer contains a first dipole element including lanthanum (La), aluminum (Al), or a combination thereof.Type: GrantFiled: October 21, 2021Date of Patent: September 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Nakjin Son, Seungjoon Lee, Bong Seob Yang, Doyoung Choi
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Patent number: 11762515Abstract: In one embodiment, a method includes by an electronic device: receiving sensor data indicative of a touch input from one or more sensors of a touch panel of the electronic device, where the touch input occurs at a detected touch location of the touch panel, accessing a baseline of signal data corresponding to the touch panel, calculating a delta change based on the baseline of the signal data and the sensor data, determining a touch state corresponding to the touch input based on a comparison of the delta change to a plurality of touch threshold levels, selecting a touch location prediction method from a plurality of touch location prediction methods based on the touch state, and determining a predicted touch location of the touch input based on the touch location prediction method and the sensor data.Type: GrantFiled: May 27, 2022Date of Patent: September 19, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Mohammad J. Abu Saude, Sergio Perdices-Gonzalez, William Augustus Workman, Dean N. Reading, Hanjin Park, Marc Estruch Tena, Sajid Hassan Sadi
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Patent number: 11763703Abstract: An electronic apparatus is provided. The electronic apparatus includes: a main body; and a power supply device configured to be electrically connected to the main body. The power supply device includes: a first housing comprising a first circuit configured to receive alternating current (AC) power; a second housing comprising a second circuit configured to supply direct current (DC) power to the main body; a hinge connected to the first housing and the second housing, and configured to be folded; and a flexible conductive structure electrically connecting the first circuit and the second circuit.Type: GrantFiled: October 17, 2022Date of Patent: September 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Wonmyung Woo, Jeongil Kang, Kangmoon Seo, Sanghoon Lee
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Patent number: 11764268Abstract: A semiconductor device, includes: gate electrodes spaced apart from each other and on a substrate; channel structures penetrating the gate electrodes, each of channel structures including a channel layer, a gate dielectric layer between the channel layer and the gate electrodes, a channel insulating layer filling between the channel layers, a channel pad on the channel insulating layer; and separation regions penetrating the gate electrodes, and spaced apart from each other, wherein the gate dielectric layer extends upwardly, further than the channel layer upwardly such that a portion of an inner side surface of the gate dielectric layer contacts the channel pad, the channel pad includes a lower pad on an upper end of the channel layer and the inner side surface of the gate dielectric layer, and having a first recess between the inner side surfaces of the gate dielectric layer; and an upper pad having a first portion in the first recess and a second portion extending from the first portion in a direction, parType: GrantFiled: May 20, 2022Date of Patent: September 19, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Sunggil Kim, Kyengmun Kang, Juyon Suh, Hyeeun Hong
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Patent number: 11759115Abstract: A blood pressure monitor including a manually operable pressurizer is disclosed. The blood pressure monitor may include a cuff configured to apply a pressure to a target portion of a body of a user, a pressurizer, a depressurizer, and a sensor to measure a blood pressure. The pressurizer may include a rotator, and be configured to supply a fluid to the cuff, to cause the cuff to apply the pressure, through rotation of the rotator caused by an external rotational force applied to the blood pressure monitor to rotate the rotator. The depressurizer may be configured to reduce the applied pressure applied by the cuff to the target portion.Type: GrantFiled: February 4, 2019Date of Patent: September 19, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Seungwoo Noh, Youn-ho Kim, Sangyun Park
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Patent number: 11761140Abstract: Provided is a washing machine including a main body having a first inlet, a drum arranged inside the main body to accommodate laundry, and a door configured to open and close the first inlet, wherein the door includes a second inlet to allow laundry to be introduced into the drum while the first inlet closed, an auxiliary door configured to open and close the second inlet, and a restraining device configured to restrain the auxiliary door such that the auxiliary door remains locked onto the door, and the main body includes a pressing device arranged inside the main body and configured to press the restraining device such that the restraining device locks the auxiliary door and to release from the retraining device such that the restraining device unlocks the auxiliary door.Type: GrantFiled: April 20, 2020Date of Patent: September 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seongwoo Yi, Jun-Young Choi, Minhyung Kim, Joonho Kim, Dong-Il Back, Byoungwoong An, Seung-Hun Lee
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Patent number: 11764837Abstract: An electronic device is provided. The electronic device includes an antenna module, a memory, and a processor controlling to identify a first beam set among a plurality of beam sets stored in the memory, perform beamforming based on the identified first beam set through the antenna module, determine whether a beam pattern is changed, based on, at least, a prediction value of a reception signal strength set corresponding to the first beam set and a measurement value of a signal received through the antenna module, and change a setting related to a reception beam if the beam pattern is determined to be changed.Type: GrantFiled: November 12, 2021Date of Patent: September 19, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Hyoungjoo Lee, Jinwoo Kim, Euichang Jung, Yonggue Han, Chaiman Lim
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Patent number: 11765887Abstract: A capacitor comprises a first electrode, a second electrode provided on the first electrode, a ferroelectric film provided between the first electrode and the second electrode, and a dielectric film provided between the ferroelectric film and the second electrode, impedance of the ferroelectric film and impedance of the dielectric film are determined such that a control voltage applied between the first electrode and the second electrode is equal to a capacitance boosting operating voltage, and the capacitance boosting operating voltage is determined by the following equation: V MAX = ( 1 + ? "\[LeftBracketingBar]" Z 2 ? "\[RightBracketingBar]" ? "\[LeftBracketingBar]" Z 1 ? "\[RightBracketingBar]" ) ? t F ? E FM where VMAX is a capacitance boosting operating voltage, Z1 is impedance of the ferroelectric film, Z2 is impedance of the dielectric film, tF is a thickness of the ferroelectric film, and EFM is an electric field applied to the ferroelectric film having a maximumType: GrantFiled: December 9, 2020Date of Patent: September 19, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jaeho Lee, Boeun Park, Yongsung Kim, Jooho Lee
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Patent number: 11764140Abstract: A semiconductor device includes: a substrate including a semiconductor chip region, a guard ring region adjacent to the semiconductor chip region, and an edge region adjacent to the guard ring region; a first interlayer insulating layer disposed on the substrate; a wiring structure disposed inside the first interlayer insulating layer and in the guard ring region, wherein the wiring structure includes a first wiring layer and a second wiring layer disposed above the first wiring layer; and a trench configured to expose at least a part of the first interlayer insulating, layer in the edge region, wherein the trench includes a first bottom surface and a second bottom surface formed at a level different from that of the first bottom surface, wherein the first bottom surface is formed between the wiring structure and the second bottom surface, and the second bottom surface is formed adjacent to the first bottom surface.Type: GrantFiled: August 2, 2021Date of Patent: September 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang-Uk Han, Duck Gyu Kim, Min Ki Kim, Jae-Min Jung, Jeong-Kyu Ha
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Patent number: 11762628Abstract: Electronic device includes display, microphone, and processor configured to activate voice input function based on user input, display graphic representation for indicating that the voice input function is activated, provide, on the display, a text display area for displaying text inputted by a plurality of user input methods and a keyboard input interface for receiving a user keyboard input, the plurality of user input methods including user keyboard input method and user voice input method, receive, via the keyboard input interface, the user keyboard input corresponding to a first text, display the first text in the text display area based on receiving the user keyboard input, receive user voice input corresponding to a second text while the keyboard input interface is provided and the voice input function is activated, and display the second text next to the first text in the text display area based on the user voice input.Type: GrantFiled: November 12, 2021Date of Patent: September 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Pawel Tracz, Szymon Leski
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Patent number: 11763440Abstract: An electronic apparatus includes a memory configured to store a plurality of images; and a processor configured to identify qualities of the plurality of images, process the plurality of images using at least one artificial intelligence model corresponding to the identified qualities, and obtain a graphic image including the processed plurality of images, and the at least one artificial intelligence model is trained to increase a quality of an input image.Type: GrantFiled: April 1, 2022Date of Patent: September 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kwangsun Baek, Kimo Kim, Doohyun Kim
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Patent number: 11762430Abstract: A hinge structure is provided. The hinge structure includes a first rotary member connected with a first housing, a second rotary member connected with a second housing, a gear structure that makes the first rotary member and the second rotary member operate in conjunction with each other, a first arm connected with the first rotary member, a second arm connected with the second rotary member, a first torque providing member that fastens the first arm and the first rotary member, and a second torque providing member that fastens the second arm and the second rotary member.Type: GrantFiled: June 16, 2021Date of Patent: September 19, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Jaehee Kim, Chongkun Cho, Hyungsoo Kim
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Patent number: 11763153Abstract: A processor-implemented neural network method includes: generating a bit vector based on whether each of a plurality of input activations within a neural network is 0; merging the bit vector into the input activations such that bit values within the neural network included in the bit vector are most significant bits (MSBs) of multi bit expressions of the input activations; merging the bit vector into weights such that the bit values included in the bit vector are MSBs of multi bit expressions of the weights; sorting the input activations and the weights based on bits corresponding to the MSBs; and implementing the neural network, including performing operations between the sorted input activations and the sorted weights.Type: GrantFiled: October 12, 2022Date of Patent: September 19, 2023Assignees: Samsung Electronics Co., Ltd., Seoul National University R&DB FoundationInventors: Yoojin Kim, Soonhoi Ha, Donghyun Kang, Jintaek Kang
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Patent number: 11763433Abstract: A depth image generation method includes obtaining a first depth image, based on a binocular image, obtaining a second depth image, using a depth camera, and obtaining a final depth image by performing image fusion on the obtained first depth image and the obtained second depth image.Type: GrantFiled: November 11, 2020Date of Patent: September 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Zhihua Liu, Yamin Mao, Tianhao Gao, Hongseok Lee, Myungjae Jeon, Qiang Wang, Yuntae Kim
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Patent number: 11762073Abstract: A 3D image sensor include a depth pixel and at least two polarization pixels adjacent to the depth pixel. The depth pixel includes a charge generation region in a substrate. The depth pixel is configured to generate depth information associated with a depth of an object from the 3D image sensor in a 3D scene based on detecting light reflected from the object. Each polarization pixel includes a photodiode in the substrate and a polarizer on the substrate in a light-incident direction. The polarization pixel is configured to generate shape information associated with a shape of a surface of the object in the 3D scene based on detecting light reflected from the object. The polarization pixels and the depth pixel collectively define a unit pixel. The respective polarizers are associated with different polarization directions.Type: GrantFiled: November 29, 2021Date of Patent: September 19, 2023Assignee: Samsung Electronics Co., Ltd.Inventors: Young-gu Jin, Young-chan Kim, Chang-rok Moon, Yong-hun Kwon, Tae-sub Jung
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Patent number: 11765880Abstract: A method of manufacturing a semiconductor device includes: forming a lower structure that includes a substrate and conductive lines on the substrate, within a chip region and an edge region of the lower structure; forming data storage structures on the chip region of the lower structure; forming dummy structures on the edge region of the lower structure; forming an interlayer insulating layer covering the data storage structures and the dummy structures on the lower structure, the interlayer insulating layer including high step portions and low step portions, an upper end of the low step portions being lower than an upper end of the high step portions; and planarizing the interlayer insulating layer.Type: GrantFiled: April 30, 2021Date of Patent: September 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Yanghee Lee, Seokhan Park, Sungchang Park, Boun Yoon, Ilyoung Yoon, Youngsuk Lee, Junseop Lee, Seungho Han, Jaeyong Han, Jeehwan Heo
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Patent number: 11764119Abstract: A method of manufacturing an integrated circuit device, the method including forming a plurality of target patterns on a substrate such that an opening is defined between two adjacent target patterns; forming a pyrolysis material layer on the substrate such that the pyrolysis material layer partially fills the opening and exposes an upper surface and a portion of a sidewall of the two adjacent target patterns; and forming a material layer on the exposed upper surface and the exposed portion of the sidewall of the two adjacent target patterns, wherein, during the forming of the material layer, the material layer does not remain on a resulting surface of the pyrolysis material layer.Type: GrantFiled: February 16, 2022Date of Patent: September 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seungheon Lee, Jaekang Koh, Hyukwoo Kwon, Munjun Kim, Taejong Han
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Patent number: 11764427Abstract: A metal-air battery includes: a cell module configured to generate electricity by oxidation of a metal and reduction of oxygen and water; a water vapor supply unit configured to supply a first water vapor to the cell module; a moisture storage unit configured to supply a first moisture at a first flow rate to the water vapor supply unit; and a condensing unit configured to supply a second moisture at a second flow rate to the water vapor supply unit by condensing the water vapor condensed from the cell module.Type: GrantFiled: June 22, 2021Date of Patent: September 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Hyunpyo Lee, Kyounghwan Choi, Mokwon Kim, Jungock Park
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Patent number: D999202Type: GrantFiled: February 25, 2021Date of Patent: September 19, 2023Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jong-Deuk Son, Bo-Soon Kang, Hyun-Keun Son, Bum-Soo Park