Abstract: Provided is a washing machine with improved clutch-assembly structure for transmitting the power of a motor. A washing machine comprises: a water tub; a spin basket rotatably provided in the water tub; a pulsator rotatably provided in the spin basket; a motor configured to rotate the pulsator; a clutch housing coupled to the water tub; a lever holder coupled to the clutch housing; and a noise prevention member provided in the lever holder to reduce noise generated between the water tub and the motor.

Abstract: A scroll compressor including a fixed scroll including a wrap accommodation portion having an inner space extending inside the wrap accommodation portion, a thrust surface around the inner space, a fixed wrap in the inner space, and an oil groove on the thrust surface; an orbiting scroll to rotate with respect to the fixed scroll, and including a mirror plate, an orbiting wrap extending from the mirror plate to engage with the fixed wrap, and at least one oil supply groove on the mirror plate facing the thrust surface of the fixed scroll; and a driving motor to rotate the orbiting scroll. When the orbiting scroll rotates, the at least one oil supply groove of the orbiting scroll moves from a first position to receive oil from the oil groove, to a second position to supply the oil to the inner space of the wrap accommodation portion.

Abstract: Methods and apparatuses using a cooking history are provided. An electronic apparatus includes a memory storing instructions, a plurality of cooking histories, and a plurality of cooking objects, and a processor configured to execute the instructions to, based on identification information regarding the plurality of cooking objects, identify a cooking object corresponding to the identification information from among the plurality of cooking objects; based on cooking setting information corresponding to a user input, identify a cooking history corresponding to the cooking setting information from among the plurality of cooking histories; obtain a cooking prediction result corresponding to the cooking history; and provide, to a user of the electronic apparatus, information regarding the cooking prediction result.

Abstract: An electronic device comprises: a panel; a sensor configured to detect a user's touch with respect to at least one region among a plurality of areas in the panel; a plurality of icon members positionable to an upper portion of the at least one region from among the plurality of regions of the panel based on the user's touch on the at least one region being detected by the sensor, the plurality of icon members being configured to respectively display icons corresponding to functions performable by the electronic device; and a processor configured to perform a function corresponding to an icon member based on the user's touch on the at least one region detected by the sensor occuring in association with the icon member.

Abstract: Provided is a semiconductor device. The semiconductor device includes a lower structure; a lower electrode on the lower structure; a dielectric layer on the lower electrode; and an upper electrode on the dielectric layer, wherein the lower electrode includes a bending reducing layer and a dielectric constant-increasing layer between the bending reducing layer and the dielectric layer, the dielectric constant-increasing layer is configured to increase a dielectric constant of the dielectric layer, and an elastic modulus of the bending reducing layer is greater than an elastic modulus of the dielectric constant-increasing layer.

Abstract: A semiconductor device includes: a bit line; an active semiconductor layer on the bit line, having a first portion extending in a vertical direction and a second portion connected to the first portion and extending in a horizontal direction, including an oxide semiconductor; a word line on a side wall of the active semiconductor layer; a gate insulating layer between the active semiconductor layer and the word line; a first contact on the active semiconductor layer, having a bottom at a level lower than a top surface of the word line and a top at a level higher than the top surface of the word line, including an oxide semiconductor containing a first dopant; a second contact adjacent to the second portion of the active semiconductor layer on the bit line and including an oxide semiconductor containing a second dopant; and a landing pad on the first contact.

Abstract: A semiconductor device includes a substrate, lower electrodes on the substrate, a dielectric layer covering the lower electrodes, and an upper electrode covering the dielectric layer. The dielectric layer includes a first region in contact with the lower electrodes, a second region in contact with the upper electrode, and a third region between the first and second regions. The third region includes a first insertion layer including a first oxide including a first metal having a first valence and a second oxide including a second metal having a second valence different from the first valence. A thickness of the dielectric layer is about 40 ? to about 60 ?. A thickness of the first insertion layer is about 3 ? to about 10 ?. A ratio of the second metal to total elements in the dielectric layer is about 5 at % to about 15 at %.

Abstract: A three dimensional semiconductor device includes first, second, third and fourth source/drain patterns sequentially stacked on a substrate, a contact structure on the first to fourth source/drain patterns and a contact line on the contact structure. The contact structure includes a first active contact on the first source/drain pattern, a second active contact on the second source/drain pattern, a third active contact on the third source/drain pattern, and a fourth active contact on the fourth source/drain pattern. A first vertical extension part of the first active contact is adjacent to one side of the contact structure, and a second vertical extension part of the second active contact is adjacent to the other side of the contact structure. A third vertical extension part of the third active contact is disposed between the first and second vertical extension parts and is closer to the first vertical extension part.

Abstract: A semiconductor device includes a substrate including an active region, a first gate line and a second gate line in the active region, a first source/drain contact pattern in the active region at one side of the first gate line, a second source/drain contact pattern in the active region at one side of the second gate line, and a dummy source/drain contact pattern in the active region between the first gate line and the second gate line. The first gate line and the second gate line may be spaced apart from each other in the first direction and may extend in the second direction. The second direction may cross the first direction. A size of the dummy source/drain contact pattern may be less than a size of the first source/drain contact pattern and a size of the second source/drain contact pattern.

Abstract: A vertical memory device includes gate electrodes on a substrate, a channel extending through the gate electrodes, and a contact plug extending through the gate electrodes. The gate electrodes are stacked in a first direction substantially vertical to an upper surface of the substrate and arranged to have a staircase shape including steps of which extension lengths in a second direction substantially parallel to the upper surface gradually increase from a lowermost level toward an uppermost level. A pad at an end portion of each of the gate electrodes in the second direction has a thickness greater than those of other portions thereof. The channel extends in the first direction. The contact plug extends in the first direction. The channel contacts the pad of a first gate electrode among the gate electrodes to be electrically connected thereto, and is electrically insulated from second gate electrodes among the gate electrodes.

Abstract: Transfer learning based on prediction determines a similarity between a source base station and a target base station. Importance of parameters is determined and training is adjusted to respect the importance of parameters. A lack of historical data is compensated by selecting a base station as source base station which has a larger amount of historical data.

Abstract: An oscillator includes a crystal oscillation circuit configured to generate an oscillation signal having a natural frequency, an injection circuit configured to inject a first injection signal and a second injection signal into the crystal oscillation circuit, a dithering circuit configured to transmit a first control signal for generating the first injection signal to the injection circuit, and a phased-lock loop (PLL) circuit configured to lock a phase of the first injection signal to the natural frequency, to transmit a second control signal for generating the second injection signal to the injection circuit.

Abstract: An audio apparatus includes a signal receiver configured to receive a left-channel signal and a right-channel signal of a stereo audio signal; at least one filter configured to block a signal in a band exceeding a predetermined frequency based on the frequency bands of each of the received left-channel signal and right-channel signal; and a controller configured to generate a center-channel signal of the stereo audio signal based on the left-channel signal and the right-channel signal passing through the filter, to calculate a signal level sensitivity between the left-channel signal and the right-channel signal passing through the filter, to determine a similarity between the left-channel signal and the right-channel signal based on the calculated signal level sensitivity, and to control the generated center-channel signal to be output in response to the determined similarity.

Abstract: A three-dimensional non-volatile memory device includes a memory cell array including a plurality of memory cells repeatedly arranged in a first lateral direction, a second lateral direction, and a vertical direction on a substrate. The first lateral direction and the second lateral direction are parallel to a main surface of the substrate and perpendicular to each other, and the vertical direction is perpendicular to the main surface of the substrate. The memory cell array includes a plurality of horizontal channel regions and a vertical word line. The plurality of horizontal channel regions extend in the first lateral direction on the substrate. The plurality of horizontal channel regions overlap each other and are apart from each other in the vertical direction. The vertical word line passes through the plurality of horizontal channel regions in the vertical direction.

Abstract: A semiconductor package includes a package substrate, an interposer on the package substrate, and a first semiconductor device and a second semiconductor device on the interposer, the first and second semiconductor devices connected to each other by the interposer, wherein at least one of the first semiconductor device and the second semiconductor device includes an overhang portion protruding from a sidewall of the interposer.

Abstract: A hybrid low drop-out (LDO) regulator is provided. The hybrid LDO regulator provides current to a load block, and includes: an analog LDO regulator configured to provide a first current corresponding to an average current consumed by the load block; and a digital LDO regulator configured to provide a second current corresponding to a peak current consumed by the load block based on information indicating the peak current is consumed.

Abstract: Disclosed are interconnection structures, semiconductor packages including the same, and methods of fabricating the same.

Abstract: A gas purifying filter includes a first gas permeable body having a gas inlet surface; a first adsorption layer disposed on the first gas permeable body and including activated carbon on which a phosphoric acid-based compound satisfying the following Formula 1 is supported; a second adsorption layer disposed on the first adsorption layer and including a hydrophobic zeolite having a SiO2/Al2O3 value of about 50 or more; and a second gas permeable body disposed on the second adsorption layer and having a gas outlet surface, where n is an integer greater than or equal to 1.

Abstract: A method of controlling an electronic device using a stylus includes establishing a wireless communication connection between the electronic device and the stylus; displaying a pointing object on a screen displayed on a display of the electronic device, wherein a position of the pointing object on the screen corresponds to a position of the stylus; obtaining first information related to whether an orientation of the electronic device is changed and second information related to whether the screen is fixed; setting a direction of a coordinate system of the display based on the first information and the second information; and moving the pointing object on the screen within the coordinate system to correspond to a movement of the stylus in space.

Abstract: An electronic apparatus including a user interface, a camera, a memory, and a processor. The electronic apparatus receives an input of a first user command for generating a map showing arrangement state of at least one device existing in a specific region, based on the first user command being input, obtains an image by capturing the specific region and the at least one device through a camera, obtains information associated with a size and a shape of the specific region based on the image, obtains identification information and arrangement information for the at least one device by recognizing the at least one device included in the image, and generates a map for the specific region based on the information on the size and the shape of the specific region and the identification information and the arrangement information for the at least one device.