Abstract: An integrated circuit device having a semiconductor substrate includes a gate structure on the semiconductor substrate. Source/drain regions are on opposite sides of the gate structure. A contact pad is on at least one of the source/drain region, and a silicide cap is on a surface of the contact pad opposite the respective source/drain region.

Abstract: A metal interconnection of a semiconductor device, formed using a damascene process, has large grains and yet a smooth surface. First, a barrier layer and a metal layer are sequentially formed in an opening in an interlayer dielectric layer. A CMP process is carried out on the metal layer to form a metal interconnection remaining within the opening. Then, the metal interconnection is treated with plasma. The plasma treatment creates compressive stress in the metal interconnection, which stress produces hillocks at the surface of the metal interconnection. In addition, the plasma treatment process causes grains of the metal to grow, especially when the design rule is small, to thereby decrease the resistivity of the metal interconnection. The hillocks are then removed by a CMP process aimed at polishing the portion of the barrier layer that extends over the upper surface of the interlayer dielectric layer. Finally, a capping insulating layer is formed.

Abstract: A data interface method includes differentially amplifying differential data signals based on a mode control signal indicating a first mode, transmitting the amplified differential data signals to a receiving semiconductor device via first and second transmission lines, and driving one of the differential data signals and a strobe signal to the first and second transmission lines, respectively, based on the mode control signal indicating a second mode, for transmitting the one of the differential data signals and the strobe signal to the receiving semiconductor device. The receiving semiconductor device samples the received differential data signals according to differential signaling, in response to a controlled sampling clock signal based on the mode control signal indicating a first mode; and samples the one of the differential data signals in response to a strobe signal, received from the transmitting semiconductor device, based on the mode control signal indicating a second mode.

Abstract: A method of retransmitting a data frame and a network apparatus using the method are provided. In the method performed in a wireless network, a first network apparatus transmits a data frame requesting a response frame. A second network apparatus determines a type of response frame according to a reception mode of the data frame. The second network apparatus transmits the determined type of response frame to the first network apparatus. The first network apparatus retransmits the data frame according to the type of the response frame transmitted to the first network apparatus.

Abstract: An internal voltage generator includes a control section and a switchable internal voltage generating circuit. The control section generates a control signal in response to a bank activation command and a bank activation signal for enabling memory banks. The internal voltage generating circuit receives a reference voltage, and responds to the control signal to output an internal voltage equal to the reference voltage. The control signal is enabled when the bank activation command and the bank activation signal are concurrently enabled. The bank activation signal is generated in response to a partial array self refresh (PASR) signal. The internal voltage may be supplied to banks selected by the bank PASR signal, thereby enabling refresh operations in the entire bank, or an internal voltage adequate to partially enable refresh operations in all the banks may be supplied. Thus, unnecessary power consumption may be effectively controlled.

Abstract: The invented method and device provide a reliable contact to a passive device of a semiconductor circuit device, the passive device being, for example, a resistor, an inductor, a fuse or the like. Adjacent, spaced, elevated, so-called dummy pattern (shoulder) regions are formed under the portions of the passive device on which the contact hole is formed. The shoulder region is formed of the same material as the first conductive layer of the gate of the peripheral transistor. The electrode may be formed through the contact hole to be a reliable contact to the integrated passive device.

Abstract: An air gap varying motor includes a base, a rotation body, a motor rotor, a motor stator which is fixed in the base, and has an inner surface for contacting and supporting the motor rotor to enable the motor rotor to rotate about a predetermined axis, and which is disposed to have a distance spaced from said motor rotor An engagement and adjustment member connects the rotation body and the motor rotor and to adjust a distance between the motor rotor and the motor stator.