Abstract: A non-volatile memory system is formed of floating gate memory cells arranged in blocks as the smallest unit of memory cells that are erasable together. The system includes a number of features that may be implemented individually or in various cooperative combinations. One feature is the storage in separate blocks of the characteristics of a large number of blocks of cells in which user data is stored. These characteristics for user data blocks being accessed may, during operation of the memory system by its controller, be stored in a random access memory for ease of access and updating. According to another feature, multiple sectors of user data are stored at one time by alternately streaming chunks of data from the sectors to multiple memory blocks. Bytes of data in the stream may be shifted to avoid defective locations in the memory such as bad columns. Error correction codes may also be generated from the streaming data with a single generation circuit for the multiple sectors of data.

Abstract: A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL to the memory cell, continuing the writing of the data in the memory cell by changing the value of the write control voltage VBL in response to an advent of a first write state of the memory cell and inhibiting any operation of writing a data to the memory cell by further changing the value of the write control voltage VBL to Vdd in response to an advent of a second write state of the memory cell.

Abstract: A NAND device including a source, a drain and a channel located between the source and drain. The NAND device also includes a plurality of floating gates located over the channel and a plurality of electrically conducting fins. Each of the plurality of electrically conducting fins is located over one of the plurality of floating gates. The plurality of electrically conducting fins include a material other than polysilicon. The NAND device also includes a plurality of control gates. Each of the plurality of control gates is located adjacent to each of the plurality of floating gates and each of the plurality of electrically conducting fins.

Abstract: A method in a memory device includes receiving data including a data block and main error correction coding (ECC) data for the data block. The data block includes a first sub-block of data and first ECC data corresponding to the first sub-block. An ECC operation is initiated to process the data block using the main ECC data. In response to the ECC operation indicating uncorrectable errors in the data, a first sub-block ECC operation is initiated to process the first sub-block of data using the first ECC data.

Abstract: A method in a data storage device with a memory includes receiving bit values to be stored at a set of cells of the memory and interleaving the received bit values to form multiple interleaved groups of data bits according to an adjustable parameter. The method also includes writing the multiple interleaved groups of data bits to the set of cells.

Abstract: A method is described to form a nonvolatile memory cell having a contact area between a phase-change material such as a chalcogenide and a heat source which is smaller than photolithographic limits. A conductive or semiconductor pillar is exposed at a dielectric surface and recessed by selective etch. A thin, conformal layer of a spacer material is deposited on the dielectric top surface, the pillar top surface, and the sidewalls of the recess, then removed from horizontal surfaces by anistropic etch, leaving a spacer on the sidewalls defining a reduced volume within the recess. The phase change material is deposited within the spacer, having a reduced contact area to the underlying conductive or semiconductor pillar.

Abstract: A lithography mask includes a plurality of patterning features formed on a mask substrate and a first plurality of sub-resolution assist features (SRAFs) formed substantially perpendicular to the patterning features on the mask substrate.

Abstract: A nonvolatile semiconductor memory device includes a memory cell array constituted by a plurality of memory blocks, an interface, a write circuit, and a read circuit. A protect flag is written in the memory block. The readout protect flag can be output to an external device through the interface. When a write command is input from the interface, the write circuit executes the write command when the protect flag in the selected memory block has a first value and does not execute the write command when the protect flag has a second value.

Abstract: Systems and methods to perform distributive ECC operations are disclosed. A method includes, in a controller of a memory device, receiving data including a data block and main error correction coding (ECC) data for the data block. The data block includes a first sub-block of data and first ECC data corresponding to the first sub-block. The method includes initiating a data block ECC operation to process the data block using the main ECC data and initiating a sub-block ECC operation to process the first sub-block using the first ECC data. The method also includes selectively initiating an error location search of the data block ECC operation based on a result of the sub-block ECC operation.

Abstract: A non-volatile memory has its cells' thresholds programmed within any one of a first set of voltage bands partitioned by a first set of reference thresholds across a threshold window. The cells are read at a higher resolution relative to a second set of reference thresholds so as to provide additional soft bits for error correction. The reference thresholds of the second set are set up to be non-uniformly distributed on the threshold window so as to provide higher resolution at designated regions. At the same time they are conducive to be read in groups for soft bits to be read bit-by-bit systematically with a simple algorithm and read circuit and using a minimum of data latches. This is accomplished by relaxing the requirement that the first set of reference threshold is a subset of the second set and that the resulting soft bits are symmetrically distributed about the hard bits.

Abstract: Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to the major surface of the substrate, the blocking dielectric comprising a plurality of blocking dielectric segments, a plurality of discrete charge storage segments, and a tunnel dielectric located between each one of the plurality of the discrete charge storage segments and the semiconductor channel.

Abstract: Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to the major surface of the substrate, the blocking dielectric comprising a plurality of blocking dielectric segments, a plurality of discrete charge storage segments, and a tunnel dielectric located between each one of the plurality of the discrete charge storage segments and the semiconductor channel.

Abstract: Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to the major surface of the substrate, the blocking dielectric comprising a plurality of blocking dielectric segments, a plurality of discrete charge storage segments, and a tunnel dielectric located between each one of the plurality of the discrete charge storage segments and the semiconductor channel.

Abstract: Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to the major surface of the substrate, the blocking dielectric comprising a plurality of blocking dielectric segments, a plurality of discrete charge storage segments, and a tunnel dielectric located between each one of the plurality of the discrete charge storage segments and the semiconductor channel.

Abstract: A non-volatile memory device includes at least one junctionless transistor and a storage region. The junctionless transistor includes a junctionless, heavily doped semiconductor channel having two dimensions less than 100 nm.

Abstract: A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.

Abstract: A soft-function trigger state machine includes state machine logic defined to use a scan-in waveform to sample a scan-clock waveform to obtain a sampled data pattern. The state machine logic is defined to compare the sampled data pattern to a soft action pattern to determine whether the sampled data pattern matches the soft action pattern. The state machine logic is also defined to trigger an action associated with the soft action pattern when the sampled data pattern matches the soft action pattern.

Abstract: A method of transmitting a stream of data bits from a memory card to a host device includes determining, at the memory card, a first number of data lines between the memory card and the host device, from one to a plurality of data lines. If the first number of data lines is determined to be a plurality of data lines, the method includes switching, at the memory card, the data stream between one of the first number of data lines and another of the first number of data lines after each occurrence of a second number of one or more bits of the data stream having passed toward the host device. The method also includes, if the first number of data lines is determined to be one data line, transmitting, from the memory card, the stream of data bits over the one data line to the host device.

Abstract: A mask is reused to form the same pattern in multiple layers in semiconductor processing. Reference marks that allow alignment accuracy to be checked are also formed with the mask. The manner of using the mask advantageously mitigates interference between reference marks in different layers.

Abstract: A removable data storage device that intelligently operates as one large data storage region or as multiple, smaller data storage regions is disclosed. The removable data storage device can be used in not only modern electronic products (using 32-bit addressing) but also legacy products (using 16-bit addressing). A host device can couple to the removable storage device to access data stored in/to the removable storage device. As an example, the removable data storage device can be a memory card.