Abstract: A non-volatile memory system may include a write task queue that queues write commands and a garbage collection module that analyzes information about pending write commands in the write task queue in order to perform garbage collection. Based on its analysis of the write task queue, the garbage collection module performs discouraging actions to discourage itself from selecting certain blocks in a candidate list to be source blocks for garbage collection. In addition or alternatively, the garbage collection module performs encouraging actions to encourage itself to select blocks storing current valid data associated with a write command as source blocks for garbage collection. Write amplification may be reduced as a result of the discouraging and encouraging actions.

Abstract: A storage device with a memory may utilize an optimized read retry operation. A read retry table includes a number of read retry cases with updated read thresholds. The read thresholds in the read retry table may be used to avoid errors caused by shifting of charge levels. The optimization of read retry includes weighting or reordering of the read retry cases in the read retry table. The selection of a read retry case (and corresponding read thresholds) are determined based on the weighting or reordering.

Abstract: Systems and methods for generating hint information associated with a host command are disclosed. In one implementation, a processor of a host system determines whether the host system has initiated a procedure that will send a command to a non-volatile memory system. The processor analyzes at least one of metadata or payload data associated with the command to determine whether the processor is able to generate hint information associated with the at least one of metadata or payload data. The processor generates hint information based on the analysis of the at least one of metadata or payload data, sends the hint information to the non-volatile memory system, and sends the command to the non-volatile memory system.

Abstract: A storage layer of a non-volatile storage device may be configured to provide key-value storage services. Key conflicts may be resolved by modifying the logical interface of data stored on the non-volatile storage device. Resolving a key conflict may comprise identifying an alternative key and implementing one or more range move operations configured to bind the stored data to the alternative key. The move operations may be implemented without relocating the data on the non-volatile storage device.

Abstract: A sense circuit includes memory cell characterization circuitry, storage circuitry, switching circuitry, and bit line biasing circuitry. The sense circuit is configured to perform a sense operation to sense a characterization of a memory cell. During a pre-charge phase, the memory cell characterization circuitry and the bit line biasing circuitry set differential voltages in the storage circuitry to levels dependent on input offset voltages according to certain polarities. The storage circuitry maintains the differential voltages during the sense phase, allowing the memory cell characterization circuitry to cancel output the input offset voltages when generating output voltages used to identify a characterization of the memory cell. The memory cell characterization circuitry also generates its output voltage based on a reference current through a reference bit line.

Abstract: A memory system may be configured to perform immediate folding of data from a low storage density area to a high storage density area. A low storage density target area may be monitored, and when a capacity of the low storage density target area reaches a threshold level, data stored in the low storage density target area may be folded to an associated high storage density target area. The memory system may utilize a pointer system to manage the folding of data. The pointer system may also be utilized for read operations in order to avoid updating address mapping tables for both the low storage density and the high storage density areas.

Abstract: A three-dimensional stacked memory device provides uniform programming speeds for a block of memory cells. The channel layers of the memory strings which are relatively close to a local interconnect of a stack are doped to account for a reduced blocking oxide thickness. Channel layers of remaining memory strings are undoped. The doping can be performing by masking the channel layers which are to remain undoped while exposing the other memory holes to a dopant. The dopant can be provided, e.g., in a carrier gas, spin on glass or other solid, or by plasma doping. An n-type dopant such as antimony, arsenic or phosphorus may be used. Heating causes the dopants to diffuse into the channel layer. Another approach deposits doped silicon for some of the channel layers and undoped silicon for other channel layers.

Abstract: A memory system and method for improving write performance in a multi-die environment are disclosed. In one embodiment, a memory system is provided comprising a plurality of memory dies and a controller. The controller is configured to determine a programming status of each of the plurality of memory dies and dynamically adjust a maximum peak current limit of the plurality of memory dies based on the programming status of each of the plurality of memory dies. Other embodiments are provided.

Abstract: A storage device with a memory may include improved endurance and programming speed by modifying the programming states of the memory blocks. For example, the blocks may be three bit memory blocks, but a dynamic reassignment of verify levels and read margins can result in the block acting like a two bit memory block. Memory blocks may be designed for a certain number of bits per cell (i.e. number of states) and the programming is based on that number. However, single level cell (SLC) programming is still possible in addition to programming according to the number of bits per cell that the memory is designed for. Multiple SLC programming steps can be used to modify the number of states for certain memory cells by the memory controller.

Abstract: A storage device may program data differently for different memory areas of a memory. In some embodiments, the storage device may use different codebooks for different memory areas. In other embodiments, the storage device may modify bit orders differently for different memory areas. What codebook the storage device uses or what bit order modification the storage device performs for a particular memory area may depend on the bad storage locations specific to that memory area. Where different codebooks are used, optimal codebooks may be selected from a library, or codebooks may be modified based on the bad storage locations of the memory areas.

Abstract: A storage device may program data differently for different memory areas of a memory. In some embodiments, the storage device may use different codebooks for different memory areas. In other embodiments, the storage device may modify bit orders differently for different memory areas. What codebook the storage device uses or what bit order modification the storage device performs for a particular memory area may depend on the bad storage locations specific to that memory area. Where different codebooks are used, optimal codebooks may be selected from a library, or codebooks may be modified based on the bad storage locations of the memory areas.

Abstract: A storage device may program data differently for different memory areas of a memory. In some embodiments, the storage device may use different codebooks for different memory areas. In other embodiments, the storage device may modify bit orders differently for different memory areas. What codebook the storage device uses or what bit order modification the storage device performs for a particular memory area may depend on the bad storage locations specific to that memory area. Where different codebooks are used, optimal codebooks may be selected from a library, or codebooks may be modified based on the bad storage locations of the memory areas.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for memory maintenance operations. A non-volatile memory device comprises a non-volatile memory medium. A non-volatile memory device is configured to receive a refresh command from a controller over a bus. A non-volatile memory device is configured to perform one or more maintenance operations on a non-volatile memory medium during a predefined period of time after receiving a refresh command.

Abstract: Systems and methods for immediate physical erasure of data in a memory system in response to a user command are disclosed. In one implementation, a memory system includes a non-volatile memory and a controller in communication with the non-volatile memory. The controller comprises a processor that is configured to receive from a host in communication with the memory system, a destruct command that indicates a user request to make the memory system inoperable. The processor is further configured to perform one or more operations to render the memory system inoperable in response to the destruct command received from the host.

Abstract: An apparatus includes a memory die including a group of storage elements and one or more unallocated redundant columns. A number of the unallocated redundant columns is based on a number of one or more bad columns of the memory die. The apparatus further includes a controller coupled to the memory. The controller is configured to receive data and redundancy information associated with the data from the memory. The data includes a first bit, and the redundancy information includes a second bit. The redundancy information is sensed from the one or more unallocated redundant columns and has a size that is based on the number of one or more bad columns. The controller is further configured to determine a value of the first bit based on one or more parity check conditions associated with the second bit.

Abstract: A memory system can program data in different modes, such as normal mode programming and burst mode programming. Burst mode programming programs data into the memory device faster than normal mode programming. MLC Blocks for burst mode programming are selected based on one or more criteria, such as block age, block programming speed, or the like. Further, one or more burst mode TRIM settings, which include one or more of a program voltage TRIM setting, a step-up voltage TRIM setting, skip verify level, and a program pulse width, are used to program the blocks selected for burst mode programming. In this regard, burst mode programming is performed more quickly than normal mode programming.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for transaction log acceleration. A log module is configured to determine transaction log records indicating a sequence of operations performed on data. A commit module is configured to send transaction log records to one or more volatile memory pages accessible over a network. Volatile memory pages are configured to ensure persistence of transaction log records. A storage module is configured to send transaction log records to a non-volatile storage device in response to an acknowledgment that one or more volatile memory pages store the transaction log records.

Abstract: A system and method is described for managing mapping data in a non-volatile memory system having a volatile memory cache smaller than the update table for the mapping data. The system includes multiple mapping layers, for example two mapping layers, including a master mapping table of logical-to-physical mapping entries and an update table of mapping updates, for a non-volatile memory. A processor swaps predetermined size portions of the update mapping table and master mapping table into and out of the volatile memory cache based on host workload. The update mapping table portions may have a fixed or an adaptive logical range. Additional mapping layers, such as an expanded mapping layer having portions with a logical range greater than the logical range of the update mapping portions, may also be included and may be swapped into and out of the volatile memory with the master and update mapping table portions.

Abstract: A data storage device includes a non-volatile memory and a controller. The non-volatile memory includes a word line coupled to a plurality of storage elements. A method includes detecting a condition associated with a defect in the word line. A first subset of the plurality of storage elements and a second subset of the plurality of storage elements are determined based on an estimated location of the defect. The method further includes determining a first read threshold for the first subset and a second read threshold for the second subset.

Abstract: Apparatuses, systems, methods, and computer program products are disclosed for on-die signal calibration. A calibration circuit on an integrated circuit device receives data from an active data path of the integrated circuit device and detects a variation in the received data from a calibration data pattern. An adjustment circuit on an integrated circuit device reduces a delay of an active data path of the integrated circuit device in response to detecting a first variation in received data. An adjustment circuit on an integrated circuit device increases a delay of an active data path of the integrated circuit device in response to detecting a second variation in received data.