Abstract: In an embodiment a method for calibrating temperature sensors includes arranging devices-under-test (DUTs) in a sealable and thermally isolated chamber of a calibration arrangement such that each of the DUTs is in proximity to, associated to and in thermal contact with at least one of a number of reference samples, controlling the calibration arrangement to thermalize the DUTs and the reference samples to a temperature set point and generating, based on a temperature-dependent quantity, a set of measurement signals for each of the DUTs, wherein each set of measurement signals comprises a test measurement signal from a distinct one of the DUTs and a reference measurement signal from each of an associated at least one of the reference samples.

Abstract: In an embodiment a sensor includes an outer housing, an inner housing disposed within an interior of the outer housing or connected to the interior of the outer housing, an ozone sensing component disposed within an interior of the inner housing, an ozone modifying component disposed within the interior of the outer housing, a substrate on which the ozone sensing component and the ozone modifying component are disposed, a first inlet integrated into the outer housing, the first inlet being configured to conduct ambient gaseous matter from an outside of the outer housing into the interior of the outer housing and a second inlet integrated into the inner housing, the second inlet being configured to conduct the gaseous matter from the interior of the outer housing into the interior of the inner housing and adjacent to the ozone sensing component, wherein the ozone sensing component is configured to generate a sensing component signal corresponding to an ozone concentration of the gaseous matter within the inter

Abstract: In an embodiment a method includes providing a semiconductor body, forming a sacrificial layer above a surface of the semiconductor body, applying a diaphragm on the sacrificial layer and removing the sacrificial layer by introducing an etchant into openings of the diaphragm, wherein applying the diaphragm comprises applying a first layer, reducing a roughness of a surface of the first layer facing away from the semiconductor body thereby providing a processed surface, and patterning and structuring the first layer to form the openings.

Abstract: A sensor package and a method for producing a sensor package are disclosed. In an embodiment a method for producing a sensor package includes providing a carrier including electric conductors, fastening a dummy die or interposer to the carrier, providing an ASIC device including an integrated sensor element and fastening the ASIC device to the dummy die or interposer.

Abstract: A sensor device includes a first sensor including a heating element configured to heat up the first sensor in a controllable manner and a second sensor thermally coupled to the heating element of the first sensor such that the heating element is further configured to heat up the second sensor in a controllable manner.

Abstract: In an embodiment an electric circuitry includes at least one first ring oscillator and at least one second ring oscillator being arranged on a substrate in different orientations, a time-to-digital converter having a converter ring oscillator and a processing circuit, wherein a first time is determined by a period duration of at least one first ring oscillator, this period duration depending on the propagation delay time of first delay elements, wherein a second time is determined by a period duration of at least one second ring oscillator, this period duration depending on the propagation delay time of second delay elements, and wherein the processing circuit is configured to determine a magnitude of the strain applied on the substrate based on a first state of the converter ring oscillator at the first time and a second state of the converter ring oscillator the second time.

Abstract: In an embodiment an electric circuit arrangement includes a current generator circuit having a first output terminal and configured to generate an output current, a controller configured to generate control signals to control the current generator circuit, a random code generator configured to generate random codes and a counter configured to generate a count, wherein the current generator circuit comprises a plurality of output current paths and a plurality of controllable switching circuits, wherein each of the output current paths includes a respective electrical component to define a current in the respective output current path, wherein a respective one of the controllable switching circuits is coupled to a respective one of the output current paths to connect the respective electrical component to the first output terminal, and wherein the random code generator is configured to provide a respective code derived from a respective one of the random codes.

Abstract: In an embodiment a semiconductor transducer device includes a semiconductor body and a diaphragm having a first layer and a second layer, wherein a main extension plane of the diaphragm is arranged parallel to a surface of the semiconductor body, wherein the diaphragm is suspended at a distance from the semiconductor body in a direction perpendicular to the main extension plane of the diaphragm, wherein the second layer comprises titanium and/or titanium nitride, wherein the first layer comprises a material that is resistant to an etchant comprising fluorine or a fluorine compound, and wherein the second layer is arranged between the semiconductor body and the first layer.

Abstract: A circuit arrangement comprises a first branch comprising a resistor of variable resistance and a diode-connected bipolar transistor and a second branch comprising a resistor of fixed resistance and another diode-connected bipolar transistor. A control loop reproduces a voltage drop at the resistor of variable resistance to a voltage drop at the resistor of fixed resistance. Output terminals are connected to the bipolar transistors to supply a differential voltage. The circuit arrangement may be used as an analog frontend circuit in a gas sensor or a temperature sensor arrangement.

Abstract: A calibration arrangement has a sealable and thermally-isolated chamber comprising a socket mount having a number of reference samples in thermal contact with the socket mount and a number of sample sockets for devices-under test, DUTs, with each sample socket being arranged in proximity to and associated to at least one of the reference samples. The arrangement further comprises a thermal chuck and a circuit board, which is configured to provide electrical connection to the reference samples in the socket mount and DUTs in the sample sockets. The thermal chuck is configured to thermalize the socket mount and the circuit board to a temperature set point.

Abstract: In an embodiment, an integrated MEMS transducer device includes a substrate body having a first electrode on a substrate, an etch stop layer located on a surface of the substrate, a suspended micro-electro-mechanical systems (MEMS) diaphragm with a second electrode, an anchor structure with anchors connecting the MEMS diaphragm to the substrate body and a sacrificial layer in between the anchors of the anchor structure, the sacrificial layer including a first sub-layer of a first material, wherein the first sub-layer is arranged on the etch stop layer, a second sub-layer of a second material, wherein the second sub-layer is arranged on the first sub-layer, and wherein the first and the second material are different materials.

Abstract: In an embodiment a method includes transmitting a signal train through a medium, wherein the signal train includes a sequence of waves of a first group and of a second group, the first and second groups being shifted in a time domain according to a predetermined phase shift, receiving the signal train as a received signal train and as a function of time, detecting a phase shift in the received signal train, assigning wave periods of the received signal train to respective wave periods of the first group using the detected phase shift as reference and determining a sequence of time-of-flight signals from the sequence of waves of the first group and the assigned wave periods of the received signal train, respectively.

Abstract: In an embodiment, an ADC converter includes a first injection branch and a second injection branch, a first feedback branch and a second feedback branch, an integration node connected to the first and second injection branches and the first and second feedback branches, an integrator connected to the integration node and a comparator connected downstream of the integrator and configured to generate a comparator output signal to control the first and second feedback branches, wherein the first and second injection branches are configured to provide a charge injection dependent on a respective input quantity to the integration node, wherein the input quantity of the first injection branch is selected from a differential voltage signal, a capacitance dependent signal and a current dependent signal, wherein the input quantity of the second injection branch is selected from another one of the differential voltage signal, the capacitance dependent signal and the current dependent signal, and wherein the first and s

Abstract: In an embodiment a method includes providing an analog signal having a first value of a temperature of an object, performing an analog-to-digital conversion of the analog signal using a first analog-to-digital converter (ADC) thereby providing a first digital signal representing an initial digital temperature value, performing an analog-to-digital conversion of the analog signal using a second ADC thereby providing a second digital signal representing a digital reference temperature value, regularly providing the analog signal having a successive value of the temperature of the object, performing the analog-to-digital conversion of the analog signal using the second ADC thereby providing the second digital signal representing a successive digital temperature value, calculating a digital delta temperature value according to a difference between the successive digital temperature value and the digital reference temperature value and repeating portions of the method as long as the digital delta temperature value

Abstract: In an embodiment a method includes transmitting a signal train through a medium, wherein the signal train includes a sequence of waves of a first group and of a second group, the first and second groups being shifted in a time domain according to a predetermined phase shift, receiving the signal train as a received signal train and as a function of time, detecting a phase shift in the received signal train, assigning wave periods of the received signal train to respective wave periods of the first group using the detected phase shift as reference and determining a sequence of time-of-flight signals from the sequence of waves of the first group and the assigned wave periods of the received signal train, respectively.

Abstract: A monolithic sensor arrangement, a manufacturing method and a measurement method are disclosed. In an embodiment a monolithic gas sensor arrangement includes a sensor including a first transducer with a first sensitive layer and a second transducer with a second sensitive layer, and a readout circuit configured to generate a first measurement signal and a second measurement signal depending on the first and second transducers, wherein the sensor arrangement is a humidity sensor arrangement, wherein the first and second sensitive layers are configured to absorb water molecules, and wherein the first and second sensitive layers differ from each other in at least one property.

Abstract: In an embodiment an electro-thermal device includes a heater, a readout circuit, a digital controller having a first input coupled to a first output of the readout circuit and a digital sigma-delta modulator having a first input coupled to an output of the digital controller and an output coupled to the heater.

Abstract: A gas sensing device comprising a substrate comprising an etched cavity portion and a substrate portion, a dielectric layer disposed on the substrate, wherein the dielectric layer comprises a dielectric membrane, wherein the dielectric membrane is adjacent to the etched cavity portion of the substrate, a heater located within the dielectric layer; a material for sensing a gas; and one or more polysilicon electrodes coupled with the material for sensing a gas.

Abstract: In an embodiment a semiconductor device includes a first diode and a second diode of specified sizing or biasing ratio, a negative voltage supply, a first resistor for a proportional to absolute temperature (PTAT) voltage drop, wherein the first diode is connected between the negative supply voltage and the first resistor, an array of dynamically matched current sources employing a dynamic element matching controller, wherein the first resistor is connected between the first diode and a first input of the array, and wherein the second diode is connected between the negative supply voltage and a second input of the array and a successive approximation register (SAR) feedback loop configured to drive a voltage difference to zero, wherein the voltage difference occurs between a first node present between the first resistor and the first input of the array and a second node present between the second diode and the second input of the array.

Abstract: A capacitive sensor is disclosed. In an embodiment a semiconductor device includes a die including a capacitive pressure sensor integrated on a CMOS circuit, wherein the capacitive pressure sensor includes a first electrode and a second electrode separated from one another by a cavity, the second electrode including a suspended tensile membrane, and wherein the first electrode is composed of one or more aluminum-free layers containing Ti.