Abstract: In an embodiment a system includes a sensor including a base having a base electrode and a first membrane suspended above the base, wherein the first membrane has a first membrane electrode, wherein the first membrane is configured to deflect with respect to the base electrode in response to an environmental condition, and wherein the sensor is configured to measure a capacitance between the base electrode and the first membrane electrode. The system further includes a first device of the system configured to generate electrical interference signals, a first electrically conductive shield layer positioned between the sensor and the first device of the system, wherein the first electrically conductive shield layer defines a plurality of first apertures extending through the first electrically conductive shield layer and a dielectric material disposed in the plurality of first apertures.

Abstract: A charge pump structure is disclosed. In an embodiment a regulated charge pump structure includes an output terminal configured to provide a regulated output voltage, a first charge pump configured to generate the output voltage as a function of an input supply voltage and a control circuit configured to limit a level of the output voltage and to generate a control voltage, wherein the level of the output voltage is controlled by the control voltage such that the output voltage does not exceed a threshold value.

Abstract: In an embodiment, a semiconductor device includes a substrate body, an environmental sensor, a cap body and a volume of gas, wherein the environmental sensor and the volume of gas are arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, wherein at least one channel between the substrate body and the cap body connects the volume of gas with an environment of the semiconductor device such that the channel is permeable for gases, and wherein a thickness of the substrate body amounts to at least 80% of a thickness of the cap body and at most 120% of the thickness of the cap body.

Abstract: In an embodiment a pressure sensor device includes a substrate body, a pressure sensor having a membrane and a cap body having at least one opening, wherein the pressure sensor is arranged between the substrate body and the cap body in a vertical direction which is perpendicular to a main plane of extension of the substrate body, and wherein the mass of the substrate body amounts to at least 80% of the mass of the cap body and at most 120% of the mass of the cap body.

Abstract: In an embodiment, a pressure sensor module includes a base electrode surrounding at least a part of a bottom electrode, an anchor arrangement on top of the base electrode including at least two electrically conductive walls that both surround at least the part of the bottom electrode and an electrically conductive layer that covers at least the bottom electrode and the anchor arrangement such that a cavity is formed between the bottom electrode, the anchor arrangement and the electrically conductive layer, wherein, on at least one side of the cavity, a proportionate area of the electrically conductive walls in a cross section extending from a surface of an inner wall of the anchor arrangement facing the cavity to a surface of an outermost wall of the anchor arrangement facing away from the cavity in a plane parallel to a plane of the bottom electrode is equal to or less than 10%.

Abstract: A sensor semiconductor device comprises a transducer which comprises a capacitor with at least two electrodes. The transducer further comprises a polymer which is arranged between at least two electrodes of the capacitor, and a top surface of the transducer. The polymer is able to absorb water and the top surface is arranged such that it is exposed to the environment of the sensor semiconductor device. Furthermore, at least a part of the top surface is superhydrophobic and the sensor semiconductor device is capable of measuring the humidity of the environment of the sensor semiconductor device.

Abstract: Capacitive pressure sensors and other devices are disclosed. In an embodiment a semiconductor device includes a first electrode, a cavity over the first electrode and a second electrode including a suspended membrane over the cavity and electrically conductive anchor trenches laterally surrounding the cavity, wherein the anchor trenches include an inner anchor trench and an outer anchor trench, the outer anchor trench having rounded corners.

Abstract: In an embodiment a method for determining an electrical parameter includes charging, in parallel, a first capacitor and a second capacitor from a common supply voltage, measuring a first discharge time by discharging the first capacitor using a comparator and a time-to-digital converter that is connected to an output of the comparator and that provides a digital output signal, measuring a second discharge time by discharging the first capacitor a second time or by discharging the second capacitor using the comparator and the time-to-digital converter and determining the electrical parameter from a ratio of the first and second discharge times.

Abstract: In an embodiment a sensor system includes a carrier implemented as one of a ceramic carrier, a printed circuit board or a transistor outline header, a measuring area semiconductor body implemented as a first micromechanical component, a gas sensor implemented as a second micromechanical component and including an electrode assembly, a sensitive layer and a sensor membrane that spans a recess, wherein the measuring area semiconductor body and the gas sensor are connected to each other, a further sensor with a further electrode assembly and a further sensitive layer, wherein the further sensor is a further gas sensor or a humidity sensor, and a measuring area filled by the gas sample and arranged between the measuring area semiconductor body and the gas sensor, wherein the gas in the measuring area is in contact with the gas sensor and the further sensor.

Abstract: A circuit arrangement for resistance measurement comprises a capacitor coupled between a first potential node and a second potential node, a pair of terminals that comprises a first terminal and a second terminal, the first and second terminals being coupleable to one of the at least one resistor. The circuit arrangement further comprises a set of circuit branches comprising a first circuit branch, a second circuit branch, a third circuit branch and a fourth circuit branch, each comprising a switch switchable between a conductive state and an insulating state. The circuit arrangement further comprises the first terminal being coupled to the first potential node via the first circuit branch and the second circuit branch being connected in parallel. The circuit arrangement further comprises the second terminal being coupled to the second potential node via the third circuit branch and the fourth circuit branch being connected in parallel.

Abstract: A sensor arrangement and a method of operating a sensor arrangement are disclosed. In an embodiment, a sensor arrangement includes a pressure sensor realized as a capacitive pressure sensor, a capacitance-to-digital converter, a test circuit and a switching circuit coupling the capacitance-to-digital converter and the test circuit to the pressure sensor.

Abstract: A gas sensor with a gas permeable region is disclosed. In an embodiment a gas sensor includes a dielectric membrane formed on a semiconductor substrate having a cavity portion, a heater located within or over the dielectric membrane, a material for sensing a gas, wherein the material is located on one side of the dielectric membrane, a support structure located near the material, a gas permeable membrane coupled to the support structure so as to protect the material, wherein the semiconductor substrate forms the support structure.

Abstract: In an embodiment a dew point sensor device includes a semiconductor substrate, a top layer arranged on the semiconductor substrate, a Peltier element integrated in the semiconductor substrate, a temperature sensor, a capacitor arranged at a surface of the top layer facing away from the semiconductor substrate, the temperature sensor and the capacitor being arranged so that a temperature of the capacitor is measurable by the temperature sensor, wherein the capacitor includes a plurality of capacitor elements each having a capacitance, and an electronic circuit configured for an individual determination of the capacitances and a generation of a set of binary digits, each of the binary digits corresponding to one of the capacitor elements and indicating whether the capacitance of the capacitor element is within a predefined range.

Abstract: The sensor package comprises a carrier (1) including electric conductors (13), an ASIC device (6) and a sensor element (7), which is integrated in the ASIC device (6). A dummy die or interposer (4) is arranged between the carrier (1) and the ASIC device (6). The dummy die or interposer (4) is fastened to the carrier (1), and the ASIC device (6) is fastened to the dummy die or interposer (4).

Abstract: A method and a gas sensor arrangement for determining an absolute gas concentration with a gas sensor and a decomposing gas to be measured are disclosed. In an embodiment a method includes acquiring a first sensor signal and determining from the first sensor signal at least one initial data point, decomposing the gas to be measured using a means for decomposing the gas of the gas sensor arrangement, acquiring a second sensor signal and determining from the second sensor signal at least one decay data point and deriving an absolute gas concentration from a gas concentration function realized as a mathematical function by evaluating the gas concentration function at least for the at least one initial data point and the at least one decay data point.

Abstract: We disclose herein a method of annealing a composition to produce a film for a sensing device, the composition comprising at least one metal oxide material, the method comprising: depositing the composition on one side of a substrate; providing a source of electromagnetic radiation in a proximity to the composition; exposing a surface of the composition to a first dose of electromagnetic radiation, wherein the first dose comprises a first property which induces annealing of the composition; exposing the surface of the composition to a second dose of electromagnetic radiation, wherein the second dose comprises a second property which induces annealing of the composition, wherein the first property is substantially the same or different to the second property.

Abstract: We disclose herein a sensing device comprising a substrate, a dielectric layer located on the substrate, a heater located within the dielectric layer; a material for sensing a gas. The material comprises an alumina (Al2O3) doped conductive metal oxide.

Abstract: The microphone and pressure sensor package comprises a carrier (1) with an opening (16), a microphone device (20) including a diaphragm (21) and a perforated back plate (22) arranged above the opening (16), an ASIC device (6), and a cover (9) forming a cavity (17) between the carrier (1) and the cover (9). The ASIC device (6) and the microphone device (20) are arranged in the cavity (17). A sensor element (7) provided for a pressure sensor is integrated in the ASIC device (6). The pressure outside the cavity (17) is transferred to the sensor element (7) through the opening (16), the diaphragm (21), and the back plate (22).

Abstract: A sensor assembly for being mounted on a circuit board comprises an interposer with at least one opening extending between a first and a second main surface of the interposer. The interposer comprises at least two stress decoupling elements, each comprising a flexible structure formed by a respective portion of the interposer being partially enclosed by one of the at least one opening. A sensor die is connected to the flexible structures on the first main surface. At least two board connection elements are arranged on the first main surface and adapted for connecting the assembly to the circuit board.

Abstract: We disclose herein a method for heating a gas sensing material formulation on a microhotplate which comprises: a dielectric membrane formed on a semiconductor substrate comprising an etched portion; and the gas sensing material formulation being located on one side of the dielectric membrane. The method comprising: selectively heating the gas sensing material formulation using an infra-red (IR) heater located over the substrate, and controllably cooling the semiconductor substrate using a cooling baseplate provided under the substrate and using an insulating medium located between the substrate and the cooling base plate so that a gas sensing structure is formed on said one side of the dielectric membrane from the gas sensing material formulation.