Abstract: An electromagnetic generator includes a magnet assembly having permanent magnets magnetized in a direction of stacking so that surfaces thereof corresponding to the same pole face each other. A solenoid coil is positioned around the magnet assembly so that a position of the solenoid coil relative to the magnet assembly can be changed. Holding parts hold the solenoid coil so that a center of the solenoid coil in a winding axis direction corresponds to a plane position where the surfaces of the permanent magnets corresponding to the same pole face each other at a stop position. Repulsive magnets generate magnetic repulsive forces that maintain the magnet assembly separated from the repulsive magnets. A length of an end face of each permanent magnet in a direction perpendicular to the winding axis direction is equal to or larger than double a length of the permanent magnet in the winding axis direction.

Abstract: A printing unit comprises: a head unit including a head block having a thermal head provided therein; a platen unit including a platen roller configured to feed a recording sheet, the platen unit being separably combined with the head unit, wherein the head unit includes: a head frame including the head block removably mounted thereon, the head frame being configured to support the head block so that the head block is pivotable in a direction approaching and separating from the platen roller; an urging member interposed between the head frame and the head block, the urging member being configured to urge the thermal head toward the platen roller; a cutter mechanism mounted onto the head frame so as to be removable therefrom; and lock portions locked to the head block, which are configured to restrict a pivot of the head block toward the platen roller.

Abstract: A metal structure includes, by mass %, Fe: 10% to 30%; S: 0.005% to 0.2%; and the balance consisting of Ni and unavoidable impurities, in which a maximum grain size of the metal structure is 500 nm or less. The metal structure preferably has one or more of a stress relaxation rate of 10% or less, a lattice constant of 3.535 ? to 3.56 ?, a yield stress of 1500 MPa or more, a Young's modulus of 150 GPa or more and a Vickers hardness of Hv 580 or more.

Abstract: Provided is a Co—Ni-based alloy in which a crystal is easily controlled, a method of controlling a crystal of a Co—Ni-based alloy, a method of producing a Co—Ni-based alloy, and a Co—Ni-based alloy having controlled crystallinity. The Co—Ni-based alloy includes Co, Ni, Cr, and Mo, in which the Co—Ni-based alloy has a crystal texture in which a Goss orientation is a main orientation. The Co—Ni-based alloy preferably has a composition including, in terms of mass ratio: 28 to 42% of Co, 10 to 27% of Cr, 3 to 12% of Mo, 15 to 40% of Ni, 0.1 to 1% of Ti, 1.5% or less of Mn, 0.1 to 26% of Fe, 0.1% or less of C, and an inevitable impurity; and at least one kind selected from the group consisting of 3% or less of Nb, 5% or less of W, 0.5% or less of Al, 0.1% or less of Zr, and 0.01% or less of B.

Abstract: A semiconductor device has a body layer disposed in a semiconductor substrate, cell regions arranged around a surface layer part of the body layer, and trenches arranged in a grid pattern for separating the cell regions from each other. A gate insulating film covers inner walls of the first trenches and an inner wall of the second trench, and a gate electrode is filled in the first trenches and the second trench covered by the gate insulating film. A cell circumferential region is disposed to surround an outer side of the second trench. An interlayer insulating film is disposed on the cell regions, the first trenches, and the second trench. A gate contact hole is disposed in the interlayer insulating film at an intersection of the first trenches arranged in the grid pattern. A gate wiring is connected to the gate electrode via the gate contact hole.

Abstract: A thermal head has a support substrate, an upper substrate arranged on the support substrate on one surface side thereof in a laminated state, and an intermediate layer arranged between the upper substrate and the support substrate to bond the upper substrate and the support substrate to each other. The intermediate layer has one of a through hole and a concave portion forming a cavity portion between the upper substrate and the support substrate. A heat generating resistor is formed on a surface of the upper substrate on a side opposite to the support substrate at a position opposed to the cavity portion. The intermediate layer is formed of a glass paste having a melting point lower than a firing temperature of the support substrate and higher than a melting temperature of the upper substrate.

Abstract: The constant voltage includes a sense transistor through which a sense current flows based on an output current flowing through an output transistor; a current division circuit for dividing the sense current and outputting divided currents; a first current to voltage conversion circuit for converting a first division current output from the current division circuit to a first voltage; a second current voltage conversion circuit for converting a second division current output from the current division circuit to a second voltage; an output voltage detection circuit for controlling the current division circuit such that a drain voltage of the sense transistor becomes equal to a voltage of the output terminal; and an overcurrent protection circuit for controlling the output voltage and the output current by detecting an overcurrent flowing through the output transistor based on the first voltage.

Abstract: A semiconductor device manufacturing apparatus for encapsulating with a resin a semiconductor chip. A lead frame on which the semiconductor chip is mounted is provided between an upper mold and a lower mold. A tapered positioning pin is provided to the lower mold and includes a columnar portion having an outer diameter larger than an inner diameter of a positioning hole provided at an upper surface of the lead frame and configured to receive the columnar portion of the tapered positioning pin. Ejector pins are disposed in proximity to the tapered positioning pin at a distance determined by a thickness of the lead frame. The ejector pins are arranged so as to be symmetrical with respect to the tapered positioning pin.

Abstract: A thermal printer has a casing that houses recording paper, a printer cover connected to the casing in a manner turnable with respect to the casing around a first turning shaft for opening/closing the casing, a head unit provided on the casing and including a thermal head, and a platen unit including a platen roller and being provided on the printer cover and connected to the head unit in a manner releasable along with an opening/closing operation of the printer cover. The platen unit is mounted on the printer cover in a manner turnable around a second turning shaft that is parallel to the first turning shaft and slidable along a direction perpendicular to the second turning shaft. A biasing member is provided between the printer cover and the platen unit for biasing the platen unit toward the closing direction of the printer cover around the second turning shaft.

Abstract: A semiconductor device has a semiconductor substrate provided with a scribe region and an IC region. A first insulating film is disposed on the semiconductor substrate across the scribe region and the IC region. At least one separation groove is provided in the first insulating film in the scribe region. Side walls made of a plug metal film are formed only on respective lateral walls of the separation groove so that the plug metal film on the lateral walls does not extend out of the separation groove and does not exist on an upper surface of the first insulating film. A second insulating film covers at least the side walls formed on the respective lateral walls of the separation groove so that the side walls are disposed under the second insulating film.

Abstract: A switching regulator is provided which can prevent overshooting in an output voltage even when a source voltage is returned to a normal voltage from a voltage lower than a desired output voltage of the switching regulator. The switching regulator includes a 100% duty detector circuit that detects that a PWM comparator is in a 100%-duty state and a discharge accelerator circuit that detects that the output of an error amplifier discharges the voltage of a phase compensating capacitor and that accelerates the discharge, and activates the discharge accelerator circuit when the 100% duty detector circuit detects the 100%-duty state.

Abstract: To increase the strength of mounting at the time of mounting a piezoelectric vibrating piece on a package. In a piezoelectric vibrating piece having a pair of support arm portions which are provided with mount electrodes outside a pair of vibrating arm portions, concave portions to which a conductive adhesive used for mounting to the package can penetrate are formed in side end surfaces on the inner sides in a width direction of the respective support arm portions near the mount electrodes.

Abstract: Provided is a semiconductor device including a test mode circuit capable of changing the semiconductor device into a test mode with fewer malfunctions and without providing a test terminal. The semiconductor device includes a test circuit configured to compare data of a data input terminal and a data output terminal in synchronization with clock, and control whether or not to change the semiconductor device into a test mode in accordance with a result of the comparison.

Abstract: A resin-encapsulated semiconductor device includes a semiconductor element mounted on a die pad portion, a plurality of lead portions arranged so that leading end portions thereof are opposed to the die pad portion, and thin metal wires connecting electrodes of the semiconductor element to the lead portions. An encapsulation resin encapsulates the die pad portion, semiconductor element and lead portions in such a manner that a bottom surface part of the die pad portion and a lead bottom surface part, lead outer surface part, and lead upper end part of the lead portions are exposed from the encapsulation resin. A plating layer is formed on the lead bottom surface parts and the lead upper end parts. The encapsulation resin has cutouts on a side surface thereof vertically above the portions of the lead upper end parts on which the plating layer is formed.

Abstract: Provided are a living body stimulating electrode, a living body stimulating electrode apparatus, and a method for producing a living body stimulating electrode. The living body stimulating electrode has a flexible circuit board (FPC) between a living body stimulating electrode and a resin part. The resin part and the FPC are fixed with the living body stimulating electrode. Specifically, the flexible circuit board is disposed between the living body stimulating electrode and the resin part, and one or both of a stimulating electrode and a contact electrode constituting the living body stimulating electrode have an engaging part having a pressing part and a fixing part. The pressing part presses the flexible circuit board onto the resin part. Simultaneously, the fixing part is penetrated through a through hole formed in the flexible circuit board and pressed into a hole formed in the resin part, thereby fixed to and held by the resin part.

Abstract: Provided is a semiconductor device formed with a trench portion for providing a concave portion in a gate width direction and with a gate electrode provided within and on a top surface of the trench portion via a gate insulating film. At least a part of a surface of each of the source region and the drain region is made lower than other parts of the surface by removing a thick oxide film formed in the vicinity of the gate electrode. Making lower the part of the surface of each of the source region and the drain region allows current flowing through a top surface of the concave portion of the gate electrode at high concentration to flow uniformly through the entire trench portion, which increase an effective gate width of the concave portion formed so as to have a varying depth in a gate width direction.

Abstract: There is provided a switching regulator including an overcurrent protection circuit which is able to automatically return from an overcurrent state. The switching regulator includes an error amplification circuit which amplifies a difference between a feedback voltage and a reference voltage based on an output voltage and outputs the amplified difference; a PWM comparator which compares an output of the error amplification circuit with an output of a triangular wave oscillation circuit, and controls an output transistor; an overcurrent detection circuit which monitors a load current flowing through a load connected to an output terminal, detects that the load current is an overcurrent, and outputs an overcurrent detection signal causing a switching operation to stop; and a negative feedback control circuit which receives the overcurrent detection signal, and controls the load current to a predetermined current value.

Abstract: Provided is a magnetic sensor device capable of performing signal processing at high speed with high accuracy. The magnetic sensor device includes: a plurality of Hall elements; a plurality of differential amplifiers to which the plurality of Hall elements are connected, respectively; a detection voltage setting circuit for outputting a reference voltage; and a comparator including: a plurality of differential input pairs connected to the plurality of differential amplifiers, respectively; and a differential input pair connected to the detection voltage setting circuit.

Abstract: A first object of the present invention is to provide Co-based alloys for biomedical applications which are Ni-free, high intensity and high elastic modulus and are suitable for plastic workability. Moreover, a second object of the present invention is to provide Co-based alloys for biomedical applications having X-ray visibility. Furthermore, a third object of the present invention is to provide a stent using the alloys. The Co-based alloys for biomedical applications according to the present invention is configured by adding alloy elements having biocompatibility and an effect of increasing stacking fault energy of the alloys.

Abstract: Provided is a sensor device capable of removing the influence of each offset voltage of a sensor element, a differential amplifier, and an amplifier of the sensor device, to thereby detect a physical quantity with high precision and respond to high-speed operation.