Patents Assigned to Semicon Light Co., LTD
-
Patent number: 9691944Abstract: A semiconductor light-emitting device of the present disclosure includes a plurality of semiconductor layers; a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer; a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer; a non-conductive reflective film formed on the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer.Type: GrantFiled: December 4, 2013Date of Patent: June 27, 2017Assignee: SEMICON LIGHT CO., LTD.Inventors: Soo Kun Jeon, Eun Hyun Park
-
Publication number: 20170170364Abstract: Disclosed is a semiconductor light emitting device, including: a plurality of semiconductor layers; a non-conductive reflective film coupled to the plurality of the semiconductor layers; and one or more electrodes formed on the non-conductive reflective film and electrically connected to the plurality of semiconductor layers, in which the one or more electrodes respectively include a lower electrode layer for reflecting light generated in the active layer and then passed the non-conductive reflective film, and an upper electrode layer arranged on the lower electrode layer for preventing a foreign material from penetrating into the lower electrode layer.Type: ApplicationFiled: February 11, 2015Publication date: June 15, 2017Applicant: SEMICON LIGHT CO., LTD.Inventor: Soo Kun JEON
-
Patent number: 9530941Abstract: The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers, including an active layer, generating light via electron-hole recombination; a first electrode; a non-conductive distributed bragg reflector coupled to the plurality of semiconductor layers, reflecting the light from the active layer; and a first light-transmitting film coupled to the distributed bragg reflector from a side opposite to the plurality of semiconductor layers with respect to the non-conductive distributed bragg reflector, with the first light-transmitting film having a refractive index lower than an effective refractive index of the distributed bragg reflector.Type: GrantFiled: July 18, 2013Date of Patent: December 27, 2016Assignee: SEMICON LIGHT CO., LTD.Inventors: Soo Kun Jeon, Eun Hyun Park, Yong Deok Kim
-
Patent number: 9466768Abstract: The present disclosure relates to a semiconductor light-emitting device, comprising: a plurality of semiconductor layers grown sequentially using a growth substrate; a first electrode for providing either electrons or holes to a first semiconductor layer; a non-conductive reflective film formed over a second semiconductor layer to reflect light from an active layer towards the first semiconductor layer which is on the growth substrate side; and a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes.Type: GrantFiled: January 14, 2013Date of Patent: October 11, 2016Assignee: SEMICON LIGHT CO., LTD.Inventors: Soo Kun Jeon, Eun Hyun Park
-
Publication number: 20160126422Abstract: A semiconductor light-emitting device of the present disclosure includes a plurality of semiconductor layers; a first inclined face having a first slope inside the plurality of semiconductor layers, which connects an etched-exposed surface of the first semiconductor layer with the surface of the second semiconductor layer and reflects the light from the active layer towards the first semiconductor layer; a second inclined face having a second slope greater than the first slope, which is provided around the plurality of semiconductor layers and reflects the light from the active layer towards the first semiconductor layer; a non-conductive reflective film formed on the second semiconductor layer, for reflecting the light from the active layer towards the first semiconductor layer.Type: ApplicationFiled: December 4, 2013Publication date: May 5, 2016Applicant: SEMICON LIGHT CO., LTD.Inventors: Soo Kun JEON, Eun Hyun PARK
-
Patent number: 9312453Abstract: The present disclosure relates to a semiconductor light emitting device, which comprises a plurality of semiconductor layers; a contact area where a first semiconductor layer is exposed as a result of the partial removal of a second semiconductor layer and an active layer; a non-conductive reflective film adapted to cover the second semiconductor layer and the contact area, such that light from the active layer is reflected towards the first semiconductor layer on the side of a growth substrate; a finger electrode extending between the non-conductive reflective film and the plurality of semiconductor layers; an electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the finger electrode; and a direct-connection type electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the plurality of semiconductor layers.Type: GrantFiled: April 30, 2014Date of Patent: April 12, 2016Assignee: SEMICON LIGHT CO., LTD.Inventors: Eun Hyun Park, Soo Kun Jeon
-
Patent number: 9236524Abstract: The present disclosure relates to a method of manufacturing a semiconductor light emitting device, comprising: forming a finger electrode in electrical communication with a second semiconductor layer; forming, on the finger electrode, a non-conductive reflective layer made up of a multi-layer dielectric film, for reflecting light from the active layer towards a first semiconductor layer on the side of a growth substrate, with the non-conductive reflective layer including a bottom layer formed by chemical vapor deposition and at least two layers formed by physical vapor deposition; and forming an electrical connection, passing through the non-conductive reflective film and being connected the finger electrode.Type: GrantFiled: July 18, 2013Date of Patent: January 12, 2016Assignee: SEMICON LIGHT CO., LTD.Inventors: Soo Kun Jeon, Eun Hyun Park, Yong Deok Kim
-
Publication number: 20150236215Abstract: The present disclosure relates to a semiconductor light emitting device, which comprises a plurality of semiconductor layers; a contact area where a first semiconductor layer is exposed as a result of the partial removal of a second semiconductor layer and an active layer; a non-conductive reflective film adapted to cover the second semiconductor layer and the contact area, such that light from the active layer is reflected towards the first semiconductor layer on the side of a growth substrate; a finger electrode extending between the non-conductive reflective film and the plurality of semiconductor layers; an electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the finger electrode; and a direct-connection type electrical connection adapted to pass through the non-conductive reflective film and be electrically connected with the plurality of semiconductor layers.Type: ApplicationFiled: April 30, 2014Publication date: August 20, 2015Applicant: SEMICON LIGHT CO., LTD.Inventors: Eun Hyun Park, Soo Kun Jeon
-
Patent number: 9054276Abstract: The present disclosure relates to a semiconductor light-emitting device, which includes: a first semiconductor layer having first conductivity; a second semiconductor layer having second conductivity different from the first conductivity; an active layer disposed between the first semiconductor layer and the second semiconductor layer and generating light by recombination of electrons and holes; a first pad electrode electrically connected to the second semiconductor layer; a high-resistance body partially disposed on the second semiconductor layer; and a branch electrode disposed on the second semiconductor layer, partially extending over the high-resistance body, and electrically connected to the first pad electrode.Type: GrantFiled: March 1, 2012Date of Patent: June 9, 2015Assignee: SEMICON LIGHT CO., LTD.Inventor: Soo Kun Jeon
-
Publication number: 20140291714Abstract: The present disclosure relates to a semiconductor light emitting device, comprising: a plurality of semiconductor layers that grows sequentially on a growth substrate, with the plurality of semiconductor layers including a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity different from the first conductivity, and an active layer interposed between the first semiconductor layer and the second semiconductor layer, generating a light with a first wavelength via electron-hole recombination; a first electrode, supplying either electrons or holes to the plurality of semiconductor layers; a second electrode, supplying, to the plurality of semiconductor layers, electrons if the holes are supplied by the first electrode, or holes if the electrons are supplied by the first electrode; a phosphor part provided over the first semiconductor layer on the side of the growth substrate, converting the light with the first wavelength generated in the active layer iType: ApplicationFiled: July 18, 2013Publication date: October 2, 2014Applicant: SEMICON LIGHT CO., LTD.Inventors: Soo Kun Jeon, Eun Hyun Park, Yong Deok Kim
-
Patent number: 8829558Abstract: The present disclosure relates to a semiconductor light-emitting device, which includes: a plurality of semiconductor layers composed of a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode disposed on the second semiconductor layer; a high-resistance body interposed between the second semiconductor layer and the first electrode; and a light-transmitting conductive film having an opening through which the high-resistance body is exposed, the first electrode being brought into contact with the light-transmitting conductive film, which is disposed on the high-resistance body, and the high-resistance body, which is exposed through the opening.Type: GrantFiled: March 27, 2012Date of Patent: September 9, 2014Assignee: Semicon Light Co., Ltd.Inventor: Soo Kun Jeon
-
Publication number: 20140217439Abstract: The present disclosure relates to a semiconductor light-emitting device, comprising: a plurality of semiconductor layers grown sequentially using a growth substrate; a first electrode for providing either electrons or holes to a first semiconductor layer; a non-conductive reflective film formed over a second semiconductor layer to reflect light from an active layer towards the first semiconductor layer which is on the growth substrate side; and a finger electrode formed between the plurality of semiconductor layers and the non-conductive reflective film, which is extended so as to provide remaining electrons or holes to the second semiconductor layer, which is in electrical communication with the second semiconductor layer, and which has an electrical connection for receiving the remaining electrons or holes.Type: ApplicationFiled: January 14, 2013Publication date: August 7, 2014Applicant: SEMICON LIGHT CO., LTD.Inventors: Soo Kun Jeon, Eun Hyun Park
-
Patent number: 8629458Abstract: The present disclosure relates to a compound semiconductor light-emitting element comprising: a frame; an adhesive provided on the frame; a light-emitting part which is secured in position on the frame by means of the adhesive and which includes a substrate, a first compound semiconductor layer formed on the substrate and having a first type of conductivity, a second compound semiconductor layer having a second type of conductivity that is different from the first type of conductivity, and an active layer disposed between the first compound semiconductor layer and the second compound semiconductor layer to generate light via electron-hole recombination; and a spacer disposed between the light-emitting part and the frame to create a gap therebetween.Type: GrantFiled: March 18, 2011Date of Patent: January 14, 2014Assignee: Semicon Light Co., Ltd.Inventor: Soo Kun Jeon
-
Patent number: 8431939Abstract: The present disclosure relates to a semiconductor light-emitting device which includes: a substrate having a first surface and a second surface; at least one semiconductor stacked body disposed on the first surface of the substrate and each including an active layer and first and second semiconductor layers disposed on both sides of the active layer, the first semiconductor layer having first conductivity, the second semiconductor layer having second conductivity different than the first conductivity, the first semiconductor layer having an exposed surface; a substrate piercing portion leading from the second surface to the first surface with a spacing from the exposed surface and opened without being covered with the at least one semiconductor stacked body; and an electrical path leading to the at least one semiconductor stacked body via the substrate piercing portion.Type: GrantFiled: August 11, 2010Date of Patent: April 30, 2013Assignee: Semicon Light Co., Ltd.Inventors: Soo Kun Jeon, Eun Hyun Park, Jong Won Kim, Jun Chun Park
-
Publication number: 20130049055Abstract: The present disclosure relates to a compound semiconductor light-emitting element comprising: a frame; an adhesive provided on the frame; a light-emitting part which is secured in position on the frame by means of the adhesive and which includes a substrate, a first compound semiconductor layer formed on the substrate and having a first type of conductivity, a second compound semiconductor layer having a second type of conductivity that is different from the first type of conductivity, and an active layer disposed between the first compound semiconductor layer and the second compound semiconductor layer to generate light via electron-hole recombination; and a spacer disposed between the light-emitting part and the frame to create a gap therebetween.Type: ApplicationFiled: March 18, 2011Publication date: February 28, 2013Applicant: SEMICON LIGHT CO., LTD.Inventor: Soo Kun Jeon
-
Patent number: 8373174Abstract: The present III-nitride semiconductor light-emitting device comprises: a first III-nitride semiconductor layer having a first conductivity type; a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type; an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; and a depletion barrier layer brought into contact with the active layer and having a first conductivity type.Type: GrantFiled: March 29, 2010Date of Patent: February 12, 2013Assignee: Semicon Light Co., LTDInventors: Soo Kun Jeon, Eun Hyun Park, Jun Chun Park
-
Publication number: 20120267672Abstract: The present disclosure relates to a semiconductor light-emitting device, which includes: a plurality of semiconductor layers composed of a first semiconductor layer, a second semiconductor layer, and an active layer; a first electrode disposed on the second semiconductor layer; a high-resistance body interposed between the second semiconductor layer and the first electrode; and a light-transmitting conductive film having an opening through which the high-resistance body is exposed, the first electrode being brought into contact with the light-transmitting conductive film, which is disposed on the high-resistance body, and the high-resistance body, which is exposed through the opening.Type: ApplicationFiled: March 27, 2012Publication date: October 25, 2012Applicant: SEMICON LIGHT CO., LTD.Inventor: Soo Kun Jeon
-
Patent number: D793001Type: GrantFiled: June 24, 2016Date of Patent: July 25, 2017Assignee: SEMICON LIGHT CO., LTD.Inventors: Kyoung Min Kim, Soo Kun Jeon, Eun Hyun Park
-
Patent number: D793002Type: GrantFiled: June 24, 2016Date of Patent: July 25, 2017Assignee: SEMICON LIGHT CO., LTD.Inventors: Kyoung Min Kim, Soo Kun Jeon, Eun Hyun Park
-
Patent number: D793618Type: GrantFiled: June 24, 2016Date of Patent: August 1, 2017Assignee: SEMICON LIGHT CO., LTD.Inventors: Kyoung Min Kim, Soo Kun Jeon, Eun Hyun Park