Patents Assigned to Semicon Light Co., LTD
  • III-nitride semiconductor light emitting device
    Patent number: 8373174
    Abstract: The present III-nitride semiconductor light-emitting device comprises: a first III-nitride semiconductor layer having a first conductivity type; a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type; an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; and a depletion barrier layer brought into contact with the active layer and having a first conductivity type.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: February 12, 2013
    Assignee: Semicon Light Co., LTD
    Inventors: Soo Kun Jeon, Eun Hyun Park, Jun Chun Park
  • III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    Publication number: 20110073870
    Abstract: The present III-nitride semiconductor light-emitting device comprises: a first III-nitride semiconductor layer having a first conductivity type; a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type; an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; and a depletion barrier layer brought into contact with the active layer and having a first conductivity type.
    Type: Application
    Filed: March 29, 2010
    Publication date: March 31, 2011
    Applicant: SEMICON LIGHT CO., LTD
    Inventors: Soo Kun JEON, Eun Hyun PARK, Jun Chun PARK