Abstract: A semiconductor device of a peripheral device control system includes one or more management blocks that are provided in association with a device to be controlled. The management blocks each include a plurality of registers that store information pertaining to each operation of the device to be controlled, and a first generation unit that performs a predetermined aggregation process on values of the plurality of registers included in the management block to generate an aggregation value that is a value formed by aggregating the values of the plurality of registers.

Abstract: The semiconductor device includes: a gate electrode on a semiconductor substrate via a gate insulating film; an offset drain layer in the semiconductor substrate on one side of the gate electrode; a drain layer on the offset drain layer; and a source layer in the semiconductor substrate on another side of the gate electrode. The semiconductor device further includes: a protective film covering the semiconductor substrate; a field plate on the protective film, and having a portion above the offset drain layer; and a field plug connected to the field plate and in the protective film and above the offset drain layer, in such a manner as to avoid reaching the offset drain layer.

Abstract: An output stage circuit comprising a bias voltage generator, a first amplifier circuit and a second amplifier circuit is provided. The bias voltage generator is coupled to an output terminal of the output stage circuit to generate a bias voltage according to an output voltage of the output terminal. The first amplifier circuit is coupled to the output terminal, a first power supply terminal and the bias voltage generator, receives a first pre-driving signal, a first predetermined voltage and the bias voltage, and determines whether to transmit a first voltage to serve as the output voltage. The second amplifier circuit is coupled to the output terminal, a second power supply terminal and the bias voltage generator, receives a second pre-driving signal, a second predetermined voltage and the bias voltage, and determines whether to transmit a second voltage to serve as the output voltage.

Abstract: The light receiving element unit includes a first light receiving element having a light receiving region on the main surface side of the first semiconductor substrate and a second light receiving element having a light receiving region on the main surface side of the second semiconductor substrate, and a support substrate having wiring for electrically connecting the first light receiving element and the second light receiving element to the outside, one of the first light receiving element and the second light receiving element has a recess formed in a concave shape from the back surface opposite to the light receiving region toward the light receiving region, and the other is accommodated in the recess.

Abstract: A semiconductor light receiving element comprises a light absorption region formed in the vicinity of the main surface of the semiconductor substrate transparent to the incident light; an incident region set to be concentric with and larger than the light absorption region; and a partially spherical concave reflecting portion formed on a back surface of the semiconductor substrate and capable of reflecting incident light incident on the incident region from the main surface side toward the light absorbing region; wherein, when the radius of curvature of the portion is R, the diameter of the incident region is B, the distance between the light absorbing region and the concave reflecting portion is W, and the diameter of the light absorbing region is P, then the radius of curvature R satisfies a condition of 2 BW/(B?P/2)?R?2BW/(B?P).

Abstract: A display apparatus and a backlight unit thereof. The display apparatus includes: a frame; a plurality of light emitting diodes regularly arranged on the frame; an optical part disposed above the plurality of light emitting diodes and including a display panel and at least one of a phosphor sheet and an optical sheet; and a light guide plate disposed between the frame and the optical part to cover the plurality of light emitting diodes, wherein the light guide plate is formed with light source grooves placed corresponding to locations of the plurality of light emitting diodes, respectively, such that light emitted from each of the light emitting diodes enters the corresponding light source groove to spread light in a lateral direction when the light enters the light guide plate, thereby enabling use of a direct type backlight unit without a separate lens.

Abstract: An edge incident type light receiving element unit capable of receiving optical signals in different wavelength ranges incident from the edge side comprises a first light receiving element for receiving optical signals in a first wavelength range and a second light receiving element for receiving optical signals in a second wavelength range, and configured so that optical signals transmitted through a first light receiving portion formed vertically on a wall portion of a first semiconductor substrate incident via a reflecting portion on a second light receiving portion formed on a second semiconductor substrate fitted on the first semiconductor substrate.

Abstract: A power reception device has: a rectifier circuit that generates a direct current voltage by having applied thereto an alternating current voltage, and has first and second output terminals that output the direct current voltage; a transistor, the drain and source of which are connected to the first and second output terminals; a gate driver circuit that controls the gate voltage of the transistor according to the voltage between the first and second output terminals; and a capacitor that has a first end that is connected to the drain of the transistor and a second end that is connected to the gate of the transistor.

Abstract: A method for controlling a motion of a robot based on map prediction mainly carries out estimation and calculation for a wall surface by combining an external sensor with internal map information about a robot, so as at least to enable the robot to walk along the estimated wall surface. The method for controlling the motion of the robot based on map prediction can be adapted to various different wall surfaces based on map prediction, including different colors and shapes, thereby reducing an operation time; and the accuracy of map prediction can be continuously corrected during an operation process, thereby realizing a good wall-following behavior.

Abstract: A processing method for applying an analog dynamic circuit to a digital testing tool includes the following steps. In a step (a), a transistor-level analog dynamic circuit is provided. In a step (b), plural equivalent models are designed according to operations of plural transistors in the transistor-level analog dynamic circuit. In a step (c), a substitution operation is performed to substitute the equivalent models for dynamic logic elements in the transistor-level analog dynamic circuit. Consequently, a gate-level substitution circuit is produced. In a step (d), the gate-level substitution circuit is imported into a digital testing tool. Consequently, a test pattern is generated. In a step (e), the transistor-level analog dynamic circuit is tested according to the test pattern.

Abstract: A wireless charging system includes a wireless power receiver, at least one receiver-side magnetic coupling member, a wireless power transmitter and at least one transmitter-side magnetic coupling member. The receiver-side magnetic coupling member is disposed on the wireless power receiver. The transmitter-side magnetic coupling member is disposed on the wireless power transmitter and is configured to attract the receiver-side magnetic coupling member. At least one of the wireless power receiver and the wireless power transmitter is movable.

Abstract: A biometric data measurement device includes a light radiation unit configured to radiate green light having a full width at half maximum (FWHM) greater than or equal to 50 nm to a human body of a user; a light receiver configured to receive light reflected from or transmitted through the human body after being radiated from the light radiation unit; and a controller configured to calculate biometric data of the user using the received light wherein a lower wavelength limit of the FWHM is less than 500 nm, and an upper wavelength limit of the FWHM is greater than 520 nm.

Abstract: A UV-LED is disclosed. The UV-LED includes a sapphire substrate, a u-GaN buffer layer formed on the sapphire substrate, an n-GaN contact layer formed on the u-GaN buffer layer, an InGaN light emitting layer formed on the n-GaN contact layer, and a p-GaN layer formed on the InGaN light emitting layer. The UV-LED has a quadrate planar shape with at least one side having a chip size of 50 ?m or less.

Abstract: A semiconductor device has a semiconductor substrate, a first insulating film formed on a surface of the semiconductor substrate, a first recess formed in the first insulating film, a first barrier film formed on an inner surface of the first insulating film except a top peripheral region of the first trench, a first conductive film formed in the first trench, and a covering film formed on an upper surface and a top peripheral region of the first conductive film and an upper surface of the first barrier film. The first conductive film includes copper.

Abstract: To provide a semiconductor device having a monitoring function with a higher degree of freedom. The semiconductor device includes: a function part that executes a predetermined process triggered according to an activation signal sent from an external device and outputs a completion signal after the predetermined process is completed; a first clocking part that monitors a first abnormality in the predetermined process based on the activation signal and the completion signal; and a branch part pair including a first branch part and a second branch part, wherein the first branch part branches the activation signal and then sends the branched activation signal to the function part and the first clocking part, and the second branch part branches the completion signal and then sends the branched completion signal to the first clocking part and the external device.

Abstract: An image distortion correction circuit according to the present invention comprises; a first distortion correction circuit that performs a mapping process on an input image signal to generate a distortion-corrected image signal; an inspection region defining circuit that defines an inspection image region in the one-frame image; an inspection region extraction circuit that extracts a part corresponding to the inspection image region from the distortion-corrected image signal and outputs the part of the distortion-corrected image signal as a first inspection image signal; a second distortion correction circuit that outputs a second inspection signal, the second inspection signal being generated by performing the mapping process on the part of the input image signal corresponding to the inspection image region; and a failure determination circuit that determines that a failure occurs and outputs a failure detection signal when the first inspection image signal and the second inspection image signal are mutually

Abstract: Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad.