Abstract: There is provided an EL light-emitting device with less uneven brightness.

Abstract: Two aspects, an impurity factor and a structural factor are assumed as the deterioration causes of an organic light emitting device and means for solving the respective factors are provided. In order to prevent deterioration of the light emitting device, concentrations of moisture and oxygen, which are left in a space in which an organic light emitting element is sealed, are minimized. At the same time, an impurity including oxygen, such as moisture or oxygen which is included in an organic compound composing the organic light emitting element, is reduced. An element structure for preventing the deterioration of the organic light emitting element due to stress is used to suppress the deterioration.

Abstract: To provide a semiconductor device having a function equivalent to that of IGFET, an activation layer is formed by a crystal silicon film crystallized by using a catalyst element helping promote crystallization and a heating treatment is carried out in an atmosphere including a halogen element by which the catalyst element is removed, the activation layer processed by such steps is constituted by a peculiar crystal structure and according to the crystal structure, a rate of incommensurate bonds in respect of all of bonds at grain boundaries is 5% or less (preferably, 3% or less).

Abstract: A semiconductor integrated circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabricating such circuit will be provided. A gate insulating film of the TFT required to operate at high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals).

Abstract: There is provided a highly reliable semiconductor device in which electrostatic breakdown can be prevented. A diamond-like carbon (DLC) film is formed on a surface of an insulating substrate, and thereafter, a thin film transistor is formed on the insulating substrate. This DLC film allows charges of static electricity to flow and can prevent electrostatic breakdown of the thin film transistor.

Abstract: An interlayer insulating film (104) that is formed on a Substrate (101) so as to cover TFTs (102, 103) is planarized by mechanical polishing that is typified by CMP. Pixel electrodes (106, 107) are formed on the interlayer insulating film (104) and an insulating layer (108) is formed so as to cover the pixel electrodes. The insulating layer (108) is planarized by second mechanical polishing so that the surfaces of the pixel electrodes become flush with those of resulting buried insulating layers (112, 113). Since the pixel electrode surfaces have no steps, such problems as alignment failures of a liquid crystal material and a contrast reduction due to diffused reflection of light can be prevented.

Abstract: The present invention provides a luminescent apparatus having a bright, high-quality image. A reflecting surface-including electrode, and an EL element formed of an organic EL layer and a transparent electrode are provided on an insulator. As shown in FIG. 1, an auxiliary electrode 107 formed of a transparent conductive film is connected to the transparent electrode via a conductor. This structure enables a resistance value of the transparent electrode 104 to be substantially lowered, and a uniform, voltage to be applied to the organic EL layer.

Abstract: An active matrix type liquid-crystal display device of IPS mode has its aperture ratio enhanced, thereby to realize an image display which has a wide angle of vision and which is clear and bright. A pixel portion (in FIG. 2) in the liquid-crystal display device comprises a TFT (115) which includes a semiconductor film formed over a substrate, and gate electrodes formed on a first insulating layer, a gate wiring line (104) which is formed on the first insulating layer, a common wiring line (113) which crosses the gate wiring line (104) through a second insulating layer, a pixel electrode (112) which is formed on the second insulating layer and which is connected with the TFT (115) of the pixel portion, a signal wiring line (106) which is formed so as to underlie the common wiring line (113) through the second insulating layer, and a connecting electrode (111) which is formed on the second insulating layer.

Abstract: An image display system comprises a first liquid crystal projector which projects a counterclockwise-rotating, circularly polarized light beam to form an image containing specific visual information on a screen and a second liquid crystal projector which projects a clockwise-rotating, circularly polarized light beam to form a white image on the same screen. When viewed with the naked eye, a combination of the two images projected on the screen appears totally white. A viewer wearing a dedicated viewing device equipped with an optical filter which allows counterclockwise-rotating, circularly polarized light to pass through can selectively see the image projected by the first liquid crystal projector.

Abstract: Conventionally, when a TFT provided with an LDD structure or a TFT provided with a GOLD structure is to be formed, there is a problem in that the manufacturing process becomes complicated, which leads to the increase in the number of steps. An electrode formed of a lamination of a first conductive layer (18b) and a second conductive layer (17c), which have different widths from each other, is formed. After the first conductive layer (18b) is selectively etched to form a first conductive layer (18c), a low concentration impurity region (25a) overlapping the first conductive layer (18c) and a low concentration impurity region (25b) not overlapping the first conductive layer 18c are formed by doping an impurity element at a low concentration.

Abstract: To provide a light emitting device having a highly definite pixel portion. An anode (102) and a bank (104) orthogonal to the anode (102) are formed on an insulator (101). A portion of the bank (104) (controlling bank 104b) is made of a metal film. By applying a voltage thereto, an electric field is formed, and a track of an EL material that is charged with an electric charge can be controlled. Thus, it becomes possible to control a film deposition position of an EL layer with precision by utilizing the above method.

Abstract: The present invention has an object to provide a method of raising a re-coupling efficiency of carriers in an EL element to thereby provide a light-emitting device having high emission efficiency. The method is that the electron trap region 106 and the hole trap region 107 are formed in the interior of the emission layer 103. The electron trap region 106 here is a region that has the action of enclosing within the emission layer an electrons that is transferred at the lowest unoccupied molecular orbit (LUMO) level of the emission layer 103. In addition, the hole trap region 107 is a region that has the action of enclosing within the emission layer a hole that is transferred at the highest occupied molecular orbit (HOMO) level of the emission layer 103.

Abstract: A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.

Abstract: An active matrix display device having a pixel structure in which pixel electrodes, gate wirings and source wirings are suitably arranged in the pixel portions to realize a high numerical aperture without increasing the number of masks or the number of steps. The device comprises a gate electrode and a source wiring on an insulating surface, a first insulating layer on the gate electrode and on the source wiring, a semiconductor layer on the first insulating film, a second insulating layer on the semiconductor film, a gate wiring connected to the gate electrode on the second insulating layer, a connection electrode for connecting the source wiring and the semiconductor layer together, and a pixel electrode connected to the semiconductor layer.

Abstract: There is provided a method of easily forming thin film transistors having the same characteristics in fabricating a differential circuit or a current mirror circuit utilizing two thin film transistors made of a polycrystalline silicon semiconductor. Four each thin film transistors are used in a differential circuit and a current mirror circuit, respectively. The thin film transistors are arranged to be symmetric to each other about a symmetry center instead of using thin film transistors arranged adjacently on the substrate in the respective circuits.

Abstract: To provide a bright and highly reliable light-emitting device. An anode (102), an EL layer (103), a cathode (104), and an auxiliary electrode (105) are formed sequentially in lamination on a reflecting electrode (101). Further, the anode (102), the cathode (104), and the auxiliary electrode (105) are either transparent or semi-transparent with respect to visible radiation. In such a structure, lights generated in the EL layer (103) are almost all irradiated to the side of the cathode (104), whereby an effect light emitting area of a pixel is drastically enhanced.

Abstract: There is provided a structure for reducing optical loss in an optical apparatus (homogenizer) for making the intensity distribution of a laser beam uniform.

Abstract: There is disclosed a hybrid circuit in which a circuit formed by TFTs is integrated with an RF filter. The TFTs are fabricated on a quartz substrate. A ceramic filter forming the RF filter is fabricated on another substrate. Terminals extend through the quartz substrate. The TFTs are connected with the ceramic filter via the terminals. Thus, an RF module is constructed.

Abstract: The image quality of a display device using a bottom gate TFT is improved. In particular, fluctuation in luminance is controlled and the frequency characteristic of a driver circuit is compensated by suppressing a change in amount of current flowing through an EL element which is caused by a change in surrounding temperature while the device is in use. A monitoring EL element is provided in addition to a pixel portion EL element. The monitoring EL element constitutes a temperature compensation circuit together with a buffer amplifier and the like. A current is supplied to the pixel portion EL element through the temperature compensation circuit. This makes it possible to keep the amount of current flowing through the pixel portion EL element constant against a change in temperature, and to control the fluctuation in luminance. An input signal is subjected to time base expansion to perform sampling with accuracy.

Abstract: An object of the present invention is to provide an active matrix type display unit having a pixel structure in which a pixel electrode formed in a pixel portion, a scanning line (gate line) and a data line are suitably arranged, and high numerical aperture is realized without increasing the number of masks and the number of processes. In this display unit, a first wiring arranged between a semiconductor film and a substrate through a first insulating film is overlapped with this semiconductor film and is used as a light interrupting film. Further, a second insulating film used as a gate insulating film is formed on the semiconductor film. A gate electrode and a second wiring are formed on the second insulating film. The first and second wirings cross each other through the first and second insulating films. A third insulating film is formed as an interlayer insulating film on the second wiring, and a pixel electrode is formed on this third insulating film.