Abstract: A power electronic assembly with a sleeve that has a virtual longitudinal axis and a circuit carrier. The sleeve has a tube-shaped plug-in section which runs around the longitudinal axis, and a first base section arranged at a first end of the plug-in section and runs around the longitudinal axis and extends away from the longitudinal axis. The first base section has at its end a flat first contact surface which runs around the longitudinal axis in a closed manner and which runs in a first plane which runs perpendicular to the longitudinal axis. The first base section has an edge surface which runs around the longitudinal axis in a closed manner and the first base section has a second contact surface which runs from the first contact surface and away from the first plane in the direction towards the edge surface.

Abstract: A method for manufacturing a power semiconductor module and a power semiconductor module having, in each case, a housing, a switchgear arranged in this housing and having a plurality of connection elements, has the following method steps: A) forming a housing with pre-fixed connection elements; B) arranging the switchgear in the housing and connecting the connection elements to connection surfaces of a substrate of the switchgear; C) arranging a positioning device for fixing the position of the connection elements with respect to one another; D) fixing the connection elements relative to one another and to the housing.

Abstract: A power semiconductor module has a substrate and an insulation layer and a metal layer arranged on the insulation layer, forming conductor tracks, comprising power semiconductor components arranged on the metal layer and conductively contacted with the metal layer. A pressure device arranged above the substrate in the normal direction of the insulation layer and having a pressure body and pressure elements running toward the substrate. The pressure elements each being connected to the pressure body to move resiliently in the normal direction via a spring element. The pressure body exerting a pressure onto the pressure elements in the direction toward the substrate via the spring elements, the pressure elements being arranged in such a way that, owing to the pressure exerted by the pressure body, they press onto power semiconductor component surrounding regions, surrounding the power semiconductor components, of the substrate.

Abstract: A power electronics system has a housing, a cooling device, a power semiconductor module and a capacitor device. The cooling device has a first and a second main surface. The power semiconductor module is arranged on the first main surface and is in thermally conducting contact with the cooling device and the capacitor device is arranged on the second main surface and is in thermally conducting contact with the cooling device. At least one DC connection device is connected to a DC module connection of the power semiconductor module and has a first cooling section, which is in thermally conducting contact with the cooling device.

Abstract: A power semiconductor device has a substrate on which power semiconductor switches are arranged and has a circuit board which includes conductive first plug-in connection contacts, a capacitor, a capacitor holding element that includes a reception device for receiving the capacitor, a temperature sensor for the capacitor, a temperature sensor holding element that has a plug-in region for conductive second plug-in connection contacts. There are temperature sensor connecting lines which electrically connect the temperature sensor and the second plug-in connection contacts to one another, at least one section of a temperature sensor connecting line being configured as a conductor track on the temperature sensor holding element, the second plug-in connection contacts forming an electrically conductive plug-in connection with the first plug-in connection contacts.

Abstract: A power semiconductor chip having: a semiconductor component body; a multilayer metallization arranged on the semiconductor component body; and a nickel layer arranged over the semiconductor component body. The invention further relates to a method for producing a power semiconductor chip and to a power semiconductor device. The invention provides a power semiconductor chip which has a metallization to which a copper wire, provided without a thick metallic coating, can be reliably bonded without damage to the power semiconductor chip during bonding.

Abstract: A power semiconductor module has a substrate, with power semiconductor components, and a DC voltage connecting device, which has a first and a second flat conductor connecting element and at least one first metal layer connecting element and at least one second metal layer connecting element, wherein the second flat conductor connecting element is arranged spaced apart in the normal direction of the first flat conductor connecting element from the first flat conductor connecting element, the first flat conductor connecting element is electrically connected by the first metal layer connecting element and the second flat conductor connecting element is electrically connected by the second metal layer connecting element to the metal layer, the first flat conductor connecting element has a flat conductor end section and a flat conductor connection section arranged between the one first metal layer connecting element and the flat conductor end section.

Abstract: A converter device has a converter that has power semiconductor switches and has a control device that is designed to drive the power semiconductor switches. The control device is designed to drive the power semiconductor switches so that electrical switching losses occurring in the converter are reduced during use.

Abstract: A power electronic switching device has a substrate facing in a normal direction with a first and a second conductive track, and a power semiconductor component is arranged on the first conductive track by an electrically conductive connection. The power semiconductor component has a laterally surrounding edge and an edge region and a contact region on its first primary side facing away from the substrate, and with a three-dimensionally preformed insulation molding that has an overlap segment, a connection segment and an extension segment, wherein the overlap segment, starting from the edge partially overlaps the edge region of the power semiconductor component.

Abstract: A liquid cooling device with a main body has a planar surface for the arrangement of a power semiconductor device. This main body has a first end face and a second end face opposite said first one, and a plurality of tubular cooling recesses extending from the first to the second end face. A first swirling element arranged in an associated cooling recess, wherein the swirling element has an operative section arranged within the associated cooling recess and a locking section, wherein the locking section interacts with a locking abutment and/or with a further swirling element, and therefore prevents rotation of the operative section in the associated recess.

Abstract: A method and an apparatus for the pressure-sintering connection of a first and a second connection provide a frame element lowerable onto a frame surface surrounding the supporting surface, having a sintering ram lowerable lowered from the normal direction onto the second connection partner and exerts pressure thereon, and converting a sintering paste between the connection partners into a sintered metal, and having an auxiliary apparatus for the arrangement of a separating film for the peripheral covering of the frame surface and the connection partners. This arrangement of the separating film produces an inner region bounded by the frame element and bounded by a separating film portion within the frame element and by the supporting surface, and injection opening and an outlet opening allow a second gas to flush through said inner region from the injection opening to the outlet opening and displace a first gas.

Abstract: A power electronics submodule for mounting on a cooling device, has first and second surface sections next to one another, a substrate with a housing and includes a connection element, conductively connected by a contact to a track of the substrate and a connection section, arranged parallel to the substrate, the substrate arranged on the first surface section, the housing has a housing section, with a first main surface, arranged on the second surface section, and a second main surface, situated opposite the first main surface. In a non-mounted state a first main surface of the connection section is a first distance from the second main surface of the housing section in the housing region of a fastening device.

Abstract: A power semiconductor module includes a flexible first substrate and a flexible second substrate and a first and second power semiconductor switch arranged between the first and second substrate. The first substrate has an electrically conductive first metal layer facing towards the power semiconductor switches, an electrically conductive second metal layer and an electrically non-conductive first insulation film arranged between the first and second metal layer. The second substrate has an electrically non-conductive second insulation film and a third metal layer arranged on the second insulation film. The first and second power semiconductor switch are electrically interconnected by the first and second substrate to form a half-bridge circuit.

Abstract: A power semiconductor module has a substrate that has an electrically non-conductive insulating layer and a first metal layer on the insulating layer and forms conductor tracks, with power semiconductor components arranged on the first metal layer and electrically connected to the first metal layer and having a DC voltage connection device that has a first, second and third flat conductor connection element that are arranged on an end region of the power semiconductor module and that are electrically conductively connected to the first metal layer. During operation, the first and second flat conductor connection elements have a first electrical polarity and the third flat conductor connection element has a second electrical polarity.

Abstract: A functional component and having a partial plastic housing element with a plastic housing wall, the plastic housing wall having a device identification region integrated into the plastic housing wall and thus realizing a constituent part of the plastic housing wall. The device identification region comprising identification elements integrated into the plastic housing wall, those identification elements that realize part of a surface of the plastic housing wall realizing device identification elements, the device identification region being realized individually for the device by the device identification elements, such that the device can be unambiguously identified by means of the device identification region.

Abstract: A power semiconductor module includes a substrate, having power semiconductor components, further including a housing element, and having a DC voltage connection device having a flat lead connection device and a second flat lead connection element, wherein the flat lead connection device has a first flat lead connection element encased by a plastic element of the flat lead connection device and materially bonded to the plastic element, wherein a connection section of the first flat lead connection element projects from the plastic element, a connection section of the second flat lead connection element is arranged on the plastic element or is at least partly enclosed by the plastic element and bonded to the plastic element so that a section of the plastic element is between the first flat lead connection element and the connection section of the second flat lead connection element.

Abstract: A power semiconductor module has a substrate, load and auxiliary connector elements, and a plastic body, which preferably is a housing or a housing frame and which has a channel. The channel being for the arrangement of a compensating portion of a press-fit contact element. The press-fit contact element has a press-fit portion, a compensating portion and a foot portion, the compensating portion being elastic in a longitudinal direction of the press-fit contact element and having at least two O-shaped sub-portions arranged in succession in the longitudinal direction and having a constriction arranged between two sub-portions.

Abstract: A power semiconductor module has a first and second intermediate circuit rail, an AC potential rail and with a packaged first and second power semiconductor switch. The respective power semiconductor switch has a first and second load current terminal and a control terminal, wherein the first power semiconductor switch is between the first intermediate circuit rail and the AC potential rail and the second power semiconductor switch is between the second intermediate circuit rail and the AC potential rail. The first load terminal of the first power semiconductor switch is contacted to the first intermediate circuit rail and the second load terminal of the first power semiconductor switch is electrically conductively contacted to the AC potential rail.

Abstract: A power electronics system has a switching device and a liquid cooling device. A switching device has a plate element, and power semiconductor devices are arranged on conductor tracks and connected by means of a connecting device, wherein the liquid cooling device has a first partial body having an inlet volume region and an outlet volume region and a second partial body. A cooling volume region is formed between the two partial bodies, wherein heat transfer bodies protrude into the cooling volume region from the second partial body. The second partial body is arranged in a recess of the first partial body and the two partial bodies are connected to each other and have a common plane surface which forms a first main surface.

Abstract: A power semiconductor device has a substrate on which power semiconductor switches are arranged and has a circuit board which includes conductive first plug-in connection contacts, a capacitor, a capacitor holding element that includes a reception device for receiving the capacitor, a temperature sensor for the capacitor, a temperature sensor holding element that has a plug-in region for conductive second plug-in connection contacts. There are temperature sensor connecting lines which electrically connect the temperature sensor and the second plug-in connection contacts to one another, at least one section of a temperature sensor connecting line being configured as a conductor track on the temperature sensor holding element, the second plug-in connection contacts forming an electrically conductive plug-in connection with the first plug-in connection contacts.