Abstract: A power converter arrangement, for feeding a plurality of energy stores of electrically driven vehicles has a transformer having a first multiphase winding and a plurality of second multiphase windings. The first winding is embodied to be connected to a power supply system, in particular to a medium-voltage power supply system, and the second windings are each connected to a first connection of an associated power converter. The invention also presents an installation having such a power converter arrangement, wherein the transformer is arranged in a weatherproof enclosure and at least a plurality of power converters form parts of respective charging stations.

Abstract: A power electronics system has a housing, a cooling device, a power semiconductor module and a capacitor device, wherein a cooling section of a capacitor connection device is in theinially conducting contact with a cooling surface of the cooling device.

Abstract: A power electronics system has a housing, a cooling device, a power semiconductor module and a capacitor device, and a cooling section of a capacitor connection device is in thermally conducting contact with a cooling surface of the cooling device.

Abstract: A sintering press for producing a sintered connection between a first connection partner and a second connection partner disposed thereabove, having a suction-fixing installation for fixing the first connection partner, having a compression piece which is disposed above the suction-fixing installation.

Abstract: The invention provides a pressure sintering method including: a) providing a sintered component arrangement with a workpiece carrier having recesses, with a substrate resting on a main surface of the workpiece carrier, wherein a sintering material to be sintered is arranged between the power semiconductor components and the substrate, a first power semiconductor component and a first region of the substrate arranged above the workpiece carrier in the normal direction of the first main side of the insulation layer flush with a first recess of the workpiece carrier, and a second power semiconductor component and a second region of the substrate are arranged above the workpiece carrier in the normal direction of the first main side of the insulation layer flush with a second recess of the workpiece carrier and a step of b) pressurizing the power semiconductor components and applying a temperature treatment.

Abstract: A method for producing a power electronics system having a cooling device, a switching device, a terminal device, a capacitor device and a control device includes the following production steps: providing a cooling device with a plurality of first and second positioning cutouts; providing the switching device with a substrate and a first mounting device, which has first positioning devices; providing the terminal device, which is completely independent of the switching device, i.e. forms a dedicated component part or a dedicated assembly, with a second mounting device, which has second positioning devices; arranging the switching device on the cooling device, wherein the first positioning devices are arranged in the respectively assigned first positioning cutouts; arranging the terminal device on the cooling device, wherein the respective second positioning devices are arranged in the assigned second positioning cutouts; arranging the capacitor device.

Abstract: A circuit configuration for controlling a power semiconductor device has a first circuit carrier and a second circuit carrier arranged parallel to and spaced apart from the first, and having a plastic molded body arranged in an intermediate space between the first and second circuit carrier, wherein the first circuit carrier has a first conductor track with a first contact point, which can be implemented in particular as a contact pad or as a contact receptacle, which is arranged on a main side of the first circuit carrier facing the plastic molded body, wherein the second circuit carrier has a second conductor track with a second contact point, which is arranged on a main side of the second circuit carrier facing the plastic molded body, wherein the plastic molded body has a first holder for a first component with a first and a second contact device, and wherein the first contact device is electrically conductively connected to the first contact point and the second contact device is electrically conductivel

Abstract: A power semiconductor module contains a power semiconductor assembly, a housing which in a housing side with an outer surface has a recess with a direction of passage in the normal direction of the outer surface, having an internal contact device which has an electrically conducting contact inside the housing to an external connection element, designed as a load terminal element, with one section in the recess and having a spring element. The connection element is designed as a rigid metallic shaped body with an inner and an outer contact surface, and the outer contact surface is accessible from the outside, and the connection element is connected to the housing via an electrically insulating and mechanically elastic retaining device such that the connection element is moveable in the direction of passage, and wherein the spring element is arranged and designed in such a way that the spring action thereof acts directly or indirectly on the connection element in the direction of passage.

Abstract: A power semiconductor module has a first and second intermediate circuit rail, an AC potential rail and with a packaged first and second power semiconductor switch. The respective power semiconductor switch has a first and second load current terminal and a control terminal, wherein the first power semiconductor switch is between the first intermediate circuit rail and the AC potential rail and the second power semiconductor switch is between the second intermediate circuit rail and the AC potential rail. The first load terminal of the first power semiconductor switch is contacted to the first intermediate circuit rail and the second load terminal of the first power semiconductor switch is electrically conductively contacted to the AC potential rail.

Abstract: The invention relates to a power semiconductor device comprising a pin element which passes through a housing opening, comprising a support device, further comprising an elastic sealing device which is arranged on the support device, comprising a pressure device which is arranged on the sealing device, and comprising an electrically conductive sleeve. A first pressure element of the pressure device presses a first sealing element of the sealing device against a first support element of the support device in the axial direction of the pin element causes deformation of the first sealing element so that the first sealing element presses against the housing opening wall and against the sleeve in a perpendicular direction in relation to the axial direction of the pin element.

Abstract: The invention relates to a power semiconductor device having a pin element which passes through a housing opening, an elastic sealing device which is arranged between a housing opening wall of the housing, where the housing opening wall delimits the housing opening and encircles the pin element. The pin element runs through the sleeve and through a sealing device opening of the sealing element. The sealing device is not connected in a materially bonded manner to the sleeve, to the housing opening wall and to the pin element and the sealing device seals off the housing opening wall from the sleeve and seals off the sleeve from the pin element. A crosslinked potting compound is arranged on the sealing device. The crosslinked potting compound is connected in a materially bonded manner to the sleeve, to the housing opening wall and to the pin element and the potting compound seals off the housing opening wall from the sleeve and seals off the sleeve from the pin element.

Abstract: A diode has a semiconductor body having a first and a second semiconductor body main side. The semiconductor body has a first semiconductor zone. The semiconductor body has a second semiconductor zone arranged on the first semiconductor zone in an inner region of the semiconductor body and not extending as far as the semiconductor body edge of the semiconductor body. The semiconductor body has a third semiconductor zone arranged on the second semiconductor zone and has a higher doping concentration than the second semiconductor zone. The semiconductor body has a fourth semiconductor zone arranged on the first semiconductor zone in a semiconductor body edge region and extending from the second semiconductor zone in the direction towards the semiconductor body edge as far as the semiconductor body edge.

Abstract: A circuit device has a power converter, which includes power semiconductor switches and a capacitor which is connected to a first and a second intermediate circuit conductor in an electrically conductive manner, and having a capacitor discharge device for the electrical discharging of the capacitor. The capacitor discharge device includes an actuation device, an electrical discharge resistor and a first semiconductor switch having a first and a second load current terminal, and having a control terminal. The first load current terminal of the first semiconductor switch is connected to the first intermediate circuit conductor via the discharge resistor, and the second load current terminal of the first semiconductor switch connects to the second intermediate circuit conductor.

Abstract: A power semiconductor circuit comprising a field effect transistor having a drain, a source and a gate as terminals, and further comprising a control device having a drive device and an undervoltage detection circuit. The drive device drives the field effect transistor and is electrically connected to the gate of the field effect transistor. The undervoltage detection circuit generates an undervoltage detection signal if a power semiconductor voltage present between the drain and the source of the field effect transistor falls below a specific voltage value. The drive device switches on the field effect transistor when a switch-on command for switching on the field effect transistor and the undervoltage detection signal are present. The invention provides a power semiconductor circuit with low energy loss.

Abstract: The invention relates to a power electronic switching device having a substrate, which has a non-conductive insulation layer on which at least one first conductor track 40 and at least one second conductor track 50 are applied. The first conductor track 40 is assigned an electrical DC voltage potential DC+ of the power electronic switching device and the one second conductor track 50 is assigned an electrical AC voltage potential AC of the power electronic switching device. At three first partial power switches are arranged on the first conductor track. At least three second partial power switches are arranged on the second conductor track. The at least three first partial power switches are connected electrically in parallel with each other to form a first parallel circuit and the at least three second partial power switches are electrically connected in parallel with each other to form a second parallel circuit.