Patents Assigned to SEMILED OPTOELECTRONICS CO., LTD.
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Publication number: 20100283065Abstract: The invention relates to a light emitting diode device having a light extracting rough structure. The device includes a leadframe, one or more light emitting diode chips provided on and electrically connected to the leadframe, and a lens configured to encapsulate the one or more light emitting diode chips, the lens having a surface including a micro-roughness structure. The micro-roughness structure of the lens has a roughness between 0.1 ?m and 50 ?m. The invention also relates to a method of manufacturing a light emitting diode device having a light extracting rough structure.Type: ApplicationFiled: September 11, 2009Publication date: November 11, 2010Applicant: Semileds Optoelectronics Co., Ltd.Inventor: Jui-Kang Yen
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Patent number: 7829440Abstract: A method for the separation of multiple dies during semiconductor fabrication is described. On an upper surface of a semiconductor wafer containing multiple dies, a seed metal layer may be used to grow hard metal layers above it for handling. Metal may be plated above these metal layers everywhere except where a block of stop electroplating (EP) material exists. The stop EP material may be obliterated, and a barrier layer may be formed above the entire remaining structure. The substrate may be removed, and the individual dies may have any desired bonding pads and/or patterned circuitry added to the semiconductor surface. The remerged hard metal after laser cutting and heating should be strong enough for handling. Tape may be added to the wafer, and a breaker may be used to break the dies apart. The resulting structure may be flipped over, and the tape may be expanded to separate the individual dies.Type: GrantFiled: August 7, 2007Date of Patent: November 9, 2010Assignee: SemiLEDS Optoelectronics Co. Ltd.Inventors: Jiunn-Yi Chu, Chao-Chen Cheng, Chen-Fu Chu, Trung Tri Doan
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Publication number: 20100264432Abstract: A light emitting device comprises two light-emitting diode (LED) groups, a group of luminophor layers, and an input terminal. The first LED group includes at least one blue LED emitting light having a dominant wavelength in a range between 400 nm and 480 nm, and the second LED group includes at least one red-orange LED emitting light having a dominant wavelength in a range between 610 nm and 630 nm. The group of luminophor layers, which are selected from one of silicates, nitrides, and nitrogen oxides, are positioned above the first LED group and partially converts the light emitted by the first LED group into light having a dominant wavelength in a range between 500 nm and 555 nm. The input terminal is connected to the two LED groups for providing desired electric energy thereto.Type: ApplicationFiled: January 20, 2010Publication date: October 21, 2010Applicant: Semileds Optoelectronics Co., Ltd.Inventors: Wen-Huang Liu, Trung Tri Doan, Chuong Ahn Tran
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Patent number: 7811842Abstract: Methods for fabricating light-emitting diode (LED) array structures comprising multiple vertical LED stacks coupled to a single metal substrate is provided. The LED array structure may comprise two, three, four, or more LED stacks arranged in any configuration. Each of the LED stacks may have an individual external connection to make a common anode array since the p-doped regions of the LED stacks are all coupled to the metal substrate, or some to all of the n-doped regions of the LED stacks may be electrically connected to create a parallel LED array. Such LED arrays may offer better heat conduction and improved matching of LED characteristics (e.g., forward voltage and emission wavelength) between the individual LED stacks compared to conventional LED arrays.Type: GrantFiled: January 11, 2007Date of Patent: October 12, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventors: Wen-Huang Liu, Jui-Kang Yen
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Patent number: 7781247Abstract: A method of producing one or more vertical light-emitting diode (VLED) dies having a light-emitting diode (LED) stack comprising Group III-Group V combinations of elements (e.g., GaN, AlN, InN, AlGaN, InGaN, and InAlGaN) and a metal substrate is provided. The techniques include forming an InGaN or InAlGaN interface layer above a suitable growth-supporting substrate, such as sapphire or silicon carbide (SiC), and forming the LED stack above the interface layer. Such an interface layer may absorb a majority of the energy from a laser pulse used during laser lift-off of the growth-supporting substrate in an effort to prevent damage to the light emitting layers of the LED stack, which may result in improved brightness performance over VLED dies produced with conventional buffer layers.Type: GrantFiled: October 26, 2006Date of Patent: August 24, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventor: Anh Chuong Tran
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Patent number: 7781783Abstract: Light-emitting diode (LED) devices which can produce a uniform white light with a broad emission spectrum and a high color rendering index (CRI) are provided. For example, the emission spectrum of LED devices as described herein may provide more red light and yield a higher CRI light when compared to conventional white LEDs. For some embodiments, the various lights emitted from different layers of the LED device may mix at a light-scattering encapsulation layer and become a uniform white light.Type: GrantFiled: February 4, 2008Date of Patent: August 24, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventors: Jui-Kang Yen, Yung-Wei Chen
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Patent number: 7759670Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.Type: GrantFiled: June 10, 2008Date of Patent: July 20, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventors: Wen-Huang Liu, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
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Patent number: 7759146Abstract: A method of fabricating ultraviolet (UV) vertical light-emitting diode (VLED) structures composed of AlInGaN or AlGaN with increased crystalline quality and a faster growth rate when compared to conventional AlInGaN or AlGaN LED structures is provided. This may be accomplished by forming a sacrificial GaN layer above a carrier substrate, and then depositing the light-emitting diode (LED) stack above the sacrificial GaN layer. The sacrificial GaN layer may then be removed in subsequent processing steps.Type: GrantFiled: May 4, 2007Date of Patent: July 20, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventor: Chuong Anh Tran
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Patent number: 7723718Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.Type: GrantFiled: October 11, 2006Date of Patent: May 25, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventors: Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
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Patent number: 7687322Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.Type: GrantFiled: October 11, 2006Date of Patent: March 30, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventors: Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
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Patent number: 7615789Abstract: A vertical light-emitting diode (VLED) structure that may impart increased luminous efficiency over conventional LEDs and VLEDs is described. As additional benefits, some embodiments may have less susceptibility to electrostatic discharge (ESD) and higher manufacturing yields than conventional devices. To accomplish these benefits, embodiment of the invention may utilize a spacer or other means to separate the p-doped layer from the active layer, thereby increasing the distance between the active layer and the reflective layer within the VLED structure.Type: GrantFiled: May 9, 2006Date of Patent: November 10, 2009Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventor: Anh Chuong Tran
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Patent number: 7563625Abstract: Methods for fabricating a semiconductor light-emitting diode (LED) device with increased light extraction are provided. The method generally includes applying a mask to a surface of an LED wafer, etching the surface of the LED wafer such that etched pits are formed in the surface, removing the mask, and roughening or texturing the surface of the LED wafer including the etched pits. In this manner, the surface area of the LED device may be increased when compared to a conventional LED device, and less emitted light may experience total internal reflection (TIR) according to Snell's law, thereby leading to increased light extraction.Type: GrantFiled: December 29, 2006Date of Patent: July 21, 2009Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventors: Chuong Anh Tran, Trung Tri Doan, Chen-Fu Chu, Hao-Chun Cheng, Feng-Hsu Fan
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Patent number: D599748Type: GrantFiled: June 12, 2008Date of Patent: September 8, 2009Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventor: Wen-Huang Liu
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Patent number: D604256Type: GrantFiled: June 12, 2008Date of Patent: November 17, 2009Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventor: Wen-Huang Liu
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Patent number: D606949Type: GrantFiled: June 12, 2008Date of Patent: December 29, 2009Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventor: Wen-Huang Liu
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Patent number: D613702Type: GrantFiled: March 20, 2007Date of Patent: April 13, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventors: Jui-Kang Yen, Yung-Wei Chen
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Patent number: D616385Type: GrantFiled: August 5, 2009Date of Patent: May 25, 2010Assignee: SemiLEDS Optoelectronics Co., Ltd.Inventors: Yung-Wei Chen, Wen-Huang Liu
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Patent number: D618637Type: GrantFiled: October 30, 2009Date of Patent: June 29, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventors: Wen-Huang Liu, Li-Wei Shan
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Patent number: D620460Type: GrantFiled: October 30, 2009Date of Patent: July 27, 2010Assignee: SemiLEDs, Optoelectronics Co., Ltd.Inventor: Wen-Huang Liu
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Patent number: D624510Type: GrantFiled: October 30, 2009Date of Patent: September 28, 2010Assignee: SemiLEDs Optoelectronics Co., Ltd.Inventors: Wen-Huang Liu, Li-Wei Shan