Patents Assigned to Semileds Optoelectronics Co.
  • Patent number: 8835953
    Abstract: A lighting device comprising LEDs with phosphor layers includes a plurality of LED sets which can emit light with a peak emission wavelength between 360 nm and 490 nm; and a plurality of sets of phosphor layers covering the corresponding LED sets among the plurality of LED sets. At least two of the plurality of LED sets respectively have peak emission wavelength different from each other. The dominant fluorescence wavelength of at least one of the plurality of sets of phosphor layers ranges from 500 nm to 580 nm, and the dominant fluorescence wavelength of at least one of the other sets of phosphor layers ranges from 590 nm to 650 nm.
    Type: Grant
    Filed: March 11, 2010
    Date of Patent: September 16, 2014
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Wen-Huang Liu, Trung-Tri Doan, Chuong-Anh Tran
  • Patent number: 8648370
    Abstract: The invention relates to a wafer-type light emitting device having a substrate, one or more light emitting semiconductors formed on the substrate, one or more frames provided over the one or more light emitting semiconductors, and one or more wavelength-converting layers applied on the one or more light emitting semiconductors and confined by the one or more frames, wherein the wafer-type light emitting device is diced into a plurality of separate light emitting units.
    Type: Grant
    Filed: May 27, 2011
    Date of Patent: February 11, 2014
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Wen-Huang Liu, Yuan-Hsiao Chang, Hung-Jen Kao, Chung-Che Dan, Feng-Hsu Fan, Chen-Fu Chu
  • Patent number: 8384088
    Abstract: The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.
    Type: Grant
    Filed: November 4, 2010
    Date of Patent: February 26, 2013
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Wen-Huang Liu, Hao-Chun Cheng
  • Publication number: 20120168714
    Abstract: A vertical light emitting diode (VLED) die includes a first metal having a first surface and an opposing second surface; a second metal on the second surface of the first metal; a p-type semiconductor layer on the first surface of the first metal; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.
    Type: Application
    Filed: January 3, 2011
    Publication date: July 5, 2012
    Applicant: SemiLeds Optoelectronics Co., Ltd.
    Inventors: Jiunn-Yi Chu, Chen-Fu Chu, Chao-Chen Cheng
  • Patent number: 8148733
    Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.
    Type: Grant
    Filed: June 15, 2011
    Date of Patent: April 3, 2012
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Wen-Huang Liu, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
  • Patent number: 8143112
    Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
    Type: Grant
    Filed: January 29, 2010
    Date of Patent: March 27, 2012
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
  • Publication number: 20120032217
    Abstract: The invention provides a white light emitting diode device, which includes: a conductive substrate; a multilayered light emitting semiconductor epitaxial structure formed on the conductive substrate; a contact provided on the multilayered light emitting semiconductor epitaxial structure; a transparent layer provided on the multilayered light emitting semiconductor epitaxial structure; a wavelength converting layer provided on the transparent layer; and an optical layer provided on the wavelength converting layer. The invention also provides a method of manufacturing the white light emitting diode device.
    Type: Application
    Filed: May 27, 2011
    Publication date: February 9, 2012
    Applicant: Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation
    Inventor: Jui-Kang Yen
  • Publication number: 20110316027
    Abstract: The invention relates to a chip-type light emitting device including one or more light emitting semiconductors and one or more frames provided over a top of the one or more light emitting semiconductors.
    Type: Application
    Filed: May 27, 2011
    Publication date: December 29, 2011
    Applicant: Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation
    Inventors: Wen-Huang Liu, Chung-Che Dan, Yuan-Hsiao Chang, Hung-Jen Kao
  • Publication number: 20110316017
    Abstract: The invention relates to a wafer-type light emitting device having a substrate, one or more light emitting semiconductors formed on the substrate, one or more frames provided over the one or more light emitting semiconductors, and one or more wavelength-converting layers applied on the one or more light emitting semiconductors and confined by the one or more frames, wherein the wafer-type light emitting device is diced into a plurality of separate light emitting units.
    Type: Application
    Filed: May 27, 2011
    Publication date: December 29, 2011
    Applicant: Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation
    Inventors: Wen-Huang Liu, Yuan-Hsiao Chang, Hung-Jen Kao, Chung-Che Dan, Feng-Hsu Fan, Chen-Fu Chu
  • Patent number: 8084780
    Abstract: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC) on the substrate, and at least one light emitting diode (LED) on the substrate in electrical communication with the application specific integrated circuit (ASIC). The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated system having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.
    Type: Grant
    Filed: August 13, 2009
    Date of Patent: December 27, 2011
    Assignee: Semileds Optoelectronics Co.
    Inventors: Trung Tri Doan, Tien Wei Tan, Wen-Huang Liu, Chen-Fu Chu, Yung Wei Chen
  • Publication number: 20110114966
    Abstract: A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.
    Type: Application
    Filed: November 3, 2010
    Publication date: May 19, 2011
    Applicant: Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation
    Inventors: Wen-Huang Liu, Li-Wei Shan, Chen-Fu Chu
  • Publication number: 20110108851
    Abstract: The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.
    Type: Application
    Filed: November 4, 2010
    Publication date: May 12, 2011
    Applicant: Semileds Optoelectronics Co., Ltd., a Taiwan Corporation
    Inventors: Chen-Fu Chu, Wen-Huang Liu, Hao-Chun Cheng
  • Patent number: D653630
    Type: Grant
    Filed: April 22, 2011
    Date of Patent: February 7, 2012
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventor: Wen-Huang Liu
  • Patent number: D684548
    Type: Grant
    Filed: April 17, 2012
    Date of Patent: June 18, 2013
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventor: Chen-Fu Chu
  • Patent number: D684549
    Type: Grant
    Filed: April 25, 2012
    Date of Patent: June 18, 2013
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Chao-Chen Cheng
  • Patent number: D684941
    Type: Grant
    Filed: April 25, 2012
    Date of Patent: June 25, 2013
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Hao-Chun Cheng
  • Patent number: D685334
    Type: Grant
    Filed: April 25, 2012
    Date of Patent: July 2, 2013
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Chao-Chen Cheng
  • Patent number: D689832
    Type: Grant
    Filed: October 22, 2012
    Date of Patent: September 17, 2013
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventor: Yi-Feng Shih
  • Patent number: D690670
    Type: Grant
    Filed: April 25, 2012
    Date of Patent: October 1, 2013
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Chao-Chen Cheng, Li-Wei Shan
  • Patent number: D693779
    Type: Grant
    Filed: April 25, 2012
    Date of Patent: November 19, 2013
    Assignee: Semileds Optoelectronics Co., Ltd.
    Inventors: Chen-Fu Chu, Chao-Chen Cheng