Patents Assigned to Semileds Optoelectronics Co.
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Patent number: 8835953Abstract: A lighting device comprising LEDs with phosphor layers includes a plurality of LED sets which can emit light with a peak emission wavelength between 360 nm and 490 nm; and a plurality of sets of phosphor layers covering the corresponding LED sets among the plurality of LED sets. At least two of the plurality of LED sets respectively have peak emission wavelength different from each other. The dominant fluorescence wavelength of at least one of the plurality of sets of phosphor layers ranges from 500 nm to 580 nm, and the dominant fluorescence wavelength of at least one of the other sets of phosphor layers ranges from 590 nm to 650 nm.Type: GrantFiled: March 11, 2010Date of Patent: September 16, 2014Assignee: Semileds Optoelectronics Co., Ltd.Inventors: Wen-Huang Liu, Trung-Tri Doan, Chuong-Anh Tran
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Patent number: 8648370Abstract: The invention relates to a wafer-type light emitting device having a substrate, one or more light emitting semiconductors formed on the substrate, one or more frames provided over the one or more light emitting semiconductors, and one or more wavelength-converting layers applied on the one or more light emitting semiconductors and confined by the one or more frames, wherein the wafer-type light emitting device is diced into a plurality of separate light emitting units.Type: GrantFiled: May 27, 2011Date of Patent: February 11, 2014Assignee: Semileds Optoelectronics Co., Ltd.Inventors: Wen-Huang Liu, Yuan-Hsiao Chang, Hung-Jen Kao, Chung-Che Dan, Feng-Hsu Fan, Chen-Fu Chu
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Patent number: 8384088Abstract: The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.Type: GrantFiled: November 4, 2010Date of Patent: February 26, 2013Assignee: Semileds Optoelectronics Co., Ltd.Inventors: Chen-Fu Chu, Wen-Huang Liu, Hao-Chun Cheng
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Publication number: 20120168714Abstract: A vertical light emitting diode (VLED) die includes a first metal having a first surface and an opposing second surface; a second metal on the second surface of the first metal; a p-type semiconductor layer on the first surface of the first metal; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer.Type: ApplicationFiled: January 3, 2011Publication date: July 5, 2012Applicant: SemiLeds Optoelectronics Co., Ltd.Inventors: Jiunn-Yi Chu, Chen-Fu Chu, Chao-Chen Cheng
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Patent number: 8148733Abstract: Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a metal alloy substrate) may be provided. For some embodiments, both a current guiding structure and second current path may be provided.Type: GrantFiled: June 15, 2011Date of Patent: April 3, 2012Assignee: Semileds Optoelectronics Co., Ltd.Inventors: Wen-Huang Liu, Chen-Fu Chu, Jiunn-Yi Chu, Chao-Chen Cheng, Hao-Chun Cheng, Feng-Hsu Fan, Yuan-Hsiao Chang
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Patent number: 8143112Abstract: Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.Type: GrantFiled: January 29, 2010Date of Patent: March 27, 2012Assignee: Semileds Optoelectronics Co., Ltd.Inventors: Trung Tri Doan, Chuong Anh Tran, Chen-Fu Chu, Chao-Chen Cheng, Jiunn-Yi Chu, Wen-Huang Liu, Hao-Chun Cheng, Feng-Hsu Fan, Jui-Kang Yen
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Publication number: 20120032217Abstract: The invention provides a white light emitting diode device, which includes: a conductive substrate; a multilayered light emitting semiconductor epitaxial structure formed on the conductive substrate; a contact provided on the multilayered light emitting semiconductor epitaxial structure; a transparent layer provided on the multilayered light emitting semiconductor epitaxial structure; a wavelength converting layer provided on the transparent layer; and an optical layer provided on the wavelength converting layer. The invention also provides a method of manufacturing the white light emitting diode device.Type: ApplicationFiled: May 27, 2011Publication date: February 9, 2012Applicant: Semileds Optoelectronics Co., Ltd., a Taiwanese CorporationInventor: Jui-Kang Yen
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Publication number: 20110316027Abstract: The invention relates to a chip-type light emitting device including one or more light emitting semiconductors and one or more frames provided over a top of the one or more light emitting semiconductors.Type: ApplicationFiled: May 27, 2011Publication date: December 29, 2011Applicant: Semileds Optoelectronics Co., Ltd., a Taiwanese CorporationInventors: Wen-Huang Liu, Chung-Che Dan, Yuan-Hsiao Chang, Hung-Jen Kao
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Publication number: 20110316017Abstract: The invention relates to a wafer-type light emitting device having a substrate, one or more light emitting semiconductors formed on the substrate, one or more frames provided over the one or more light emitting semiconductors, and one or more wavelength-converting layers applied on the one or more light emitting semiconductors and confined by the one or more frames, wherein the wafer-type light emitting device is diced into a plurality of separate light emitting units.Type: ApplicationFiled: May 27, 2011Publication date: December 29, 2011Applicant: Semileds Optoelectronics Co., Ltd., a Taiwanese CorporationInventors: Wen-Huang Liu, Yuan-Hsiao Chang, Hung-Jen Kao, Chung-Che Dan, Feng-Hsu Fan, Chen-Fu Chu
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Patent number: 8084780Abstract: A light emitting diode (LED) system includes a substrate, an application specific integrated circuit (ASIC) on the substrate, and at least one light emitting diode (LED) on the substrate in electrical communication with the application specific integrated circuit (ASIC). The light emitting diode (LED) system can also include a polymer lens, and a phosphor layer on the lens or light emitting diode (LED) for producing white light. In addition, multiple light emitting diodes (LEDs) can be mounted on the substrate, and can have different colors for smart color control lighting. The substrate and the application specific integrated circuit (ASIC) are configured to provide an integrated system having smart functionality. In addition, the substrate is configured to compliment and expand the functions of the application specific integrated circuit (ASIC), and can also include built in integrated circuits for performing additional electrical functions.Type: GrantFiled: August 13, 2009Date of Patent: December 27, 2011Assignee: Semileds Optoelectronics Co.Inventors: Trung Tri Doan, Tien Wei Tan, Wen-Huang Liu, Chen-Fu Chu, Yung Wei Chen
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Publication number: 20110114966Abstract: A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.Type: ApplicationFiled: November 3, 2010Publication date: May 19, 2011Applicant: Semileds Optoelectronics Co., Ltd., a Taiwanese CorporationInventors: Wen-Huang Liu, Li-Wei Shan, Chen-Fu Chu
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Publication number: 20110108851Abstract: The invention relates to a vertical light emitting diode (VLED) having an outwardly disposed electrode, the vertical light emitting diode comprises a conductive base, a semiconductor epitaxial structure formed on the conductive base, a passivation layer formed at the periphery of the semiconductor epitaxial structure, and a conductive frame formed on the passivation layer and contacting with the edge of the upper surface of the semiconductor epitaxial structure such that the conductive frame is electrically connected to the semiconductor epitaxial structure.Type: ApplicationFiled: November 4, 2010Publication date: May 12, 2011Applicant: Semileds Optoelectronics Co., Ltd., a Taiwan CorporationInventors: Chen-Fu Chu, Wen-Huang Liu, Hao-Chun Cheng
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Patent number: D653630Type: GrantFiled: April 22, 2011Date of Patent: February 7, 2012Assignee: Semileds Optoelectronics Co., Ltd.Inventor: Wen-Huang Liu
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Patent number: D684548Type: GrantFiled: April 17, 2012Date of Patent: June 18, 2013Assignee: Semileds Optoelectronics Co., Ltd.Inventor: Chen-Fu Chu
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Patent number: D684549Type: GrantFiled: April 25, 2012Date of Patent: June 18, 2013Assignee: Semileds Optoelectronics Co., Ltd.Inventors: Chen-Fu Chu, Chao-Chen Cheng
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Patent number: D684941Type: GrantFiled: April 25, 2012Date of Patent: June 25, 2013Assignee: Semileds Optoelectronics Co., Ltd.Inventors: Chen-Fu Chu, Hao-Chun Cheng
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Patent number: D685334Type: GrantFiled: April 25, 2012Date of Patent: July 2, 2013Assignee: Semileds Optoelectronics Co., Ltd.Inventors: Chen-Fu Chu, Chao-Chen Cheng
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Patent number: D689832Type: GrantFiled: October 22, 2012Date of Patent: September 17, 2013Assignee: Semileds Optoelectronics Co., Ltd.Inventor: Yi-Feng Shih
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Patent number: D690670Type: GrantFiled: April 25, 2012Date of Patent: October 1, 2013Assignee: Semileds Optoelectronics Co., Ltd.Inventors: Chen-Fu Chu, Chao-Chen Cheng, Li-Wei Shan
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Patent number: D693779Type: GrantFiled: April 25, 2012Date of Patent: November 19, 2013Assignee: Semileds Optoelectronics Co., Ltd.Inventors: Chen-Fu Chu, Chao-Chen Cheng