Abstract: Provided are: a temperature sensor capable of ensuring reliability and improving thermal responsiveness; and a device equipped with such a temperature sensor. The present invention is provided with: a surface-mounted heat sensitive element (10) having at least a pair of electrode parts (12a), (12b); lead parts (22a), (22b) that are electrically connected to the pair of electrode parts (12a), (12b) by welding; a holder (21) that holds and fixes the lead parts (22a), (22b); and an insulation coating part (23) that insulates at least a portion of the lead parts (22a), (22b) and the heat sensitive element (10). The lead parts (22a), (22b) are tabular metal plates and are formed of a metallic material having a melting point of not more than 1300° C.

Abstract: Provided are: a gas sensor which is able to have improved gas detection performance, while being capable of suppressing variation in the output characteristics among individual gas sensors; a gas detection device; a gas detection method; and a device which is provided with a gas sensor or a gas detection device. This gas detection device (10) is provided with: a heat sensitive resistive element (2); a lead part (22b) which is connected to the heat sensitive resistive element (2) by welding, while having no material being interposed therebetween; a gas sensor (1) which is thermally coupled to the heat sensitive resistive element (2), while comprising a porous gas molecule adsorption material (3) from which specific gas molecules are desorbed by means of heating; and an electric power supply unit which supplies electric power to the heat sensitive resistive element (2), thereby heating the heat sensitive resistive element (2).

Abstract: A resistor which is able to have a reduced thickness for an insulating substrate and in which occurrence of cracking is able to be suppressed during production of the insulating substrate, the production of the resistor and mounting of the substrate, and in which the safety of a medical device is increased by forming the insulating substrate using a biocompatible material; and a temperature sensor are provided. This resistor is provided with: an insulating substrate that has a bending strength of 690 MPa or more and a thickness of 10 to 100 ?m; a resistive film that is formed on the insulating substrate; at least a pair of electrode layers, that are electrically connected to the resistive film; and a protective film that covers a region where the resistive film is formed, while forming exposure portions so that at least parts of the electrode layers are exposed therein.

Abstract: Provided are a thermistor and a device using the thermistor by which ohmic contact can be ensured between electrodes formed on a thermistor composition and wiring lines connected to the electrodes, and by which high accuracy temperature detection is possible. A thermistor is provided with a thermistor composition, a pair of electrodes that are formed on the thermistor composition and that contain a noble metal, wires that are joined to the electrodes and that have a passivation film formed on a surface thereof, and a junction material that contains a noble metal oxide which joins the electrodes to the wires.

Abstract: The purpose of the present invention is to provide: a temperature sensor able not only to prevent failures where a temperature-sensitive sintered body ends up coming out of a protective case together with a packing resin, but also to curb changes in properties of the temperature-sensitive sintered body and ensure reliability; and a device provided with this temperature sensor. A temperature sensor (1) is provided with: a protective case (2) that has a linear expansion coefficient of 7.5 to 19.5×10?6/° C.; a temperature-sensitive sintered body (3) that is arranged inside the protective case (2); a lead wire (4) that is connected to the temperature-sensitive sintered body (3) and has a cross-sectional area of 0.097 mm2 or less; and a packing resin (6) that has a linear expansion coefficient of 7.5 to 19.5×10?6/° C. and that is packed around the temperature-sensitive sintered body (3) inside the protective case (2).

Abstract: Provided are a gas sensor, a gas detection device, a gas detection method and a device provided with the gas detection device, capable of improving gas detection performance. The gas detection device is provided with a gas sensor comprising a thermosensitive resistance element and a porous gas molecule adsorptive material thermally bonded to the thermosensitive resistance element that releases specified gas molecules due to heating and cooling, and a power supply control unit that heats and cools the thermosensitive resistance element by controlling the supply of power thereto. The gas detection method comprises a heating step for putting the porous gas molecule adsorptive material in a heated state and a detecting step for detecting a specific gas due to the temperature change in the thermosensitive resistance element by heating.

Abstract: A resistor which is able to have a reduced thickness for an insulating substrate and in which occurrence of cracking is able to be suppressed during production of the insulating substrate, the production of the resistor and mounting of the substrate, and in which the safety of a medical device is increased by forming the insulating substrate using a biocompatible material; and a temperature sensor are provided. This resistor is provided with: an insulating substrate that has a bending strength of 690 MPa or more and a thickness of 10 to 100 ?m; a resistive film that is formed on the insulating substrate; at least a pair of electrode layers, that are electrically connected to the resistive film; and a protective film that covers a region where the resistive film is formed, while forming exposure portions so that at least parts of the electrode layers are exposed therein.

Abstract: Provided are a thermistor and a device using the thermistor by which ohmic contact can be ensured between electrodes formed on a thermistor composition and wiring lines connected to the electrodes, and by which high accuracy temperature detection is possible. A thermistor is provided with a thermistor composition, a pair of electrodes that are formed on the thermistor composition and that contain a noble metal, wires that are joined to the electrodes and that have a passivation film formed on a surface thereof, and a junction material that contains a noble metal oxide which joins the electrodes to the wires.

Abstract: Provided are: an infrared temperature sensor which is reduced in film deformation and achieves higher accuracy, while ensuring reliability; and a device which uses this infrared temperature sensor. An infrared temperature sensor is provided with: a film which absorbs infrared light; a case which covers and holds the film so as to form airtight spaces between itself and the film, and which is provided with a light guide part that has an opening and guides infrared light and a shielding part that has a shielding wall and shields infrared light; ventilation portion which allow air permeation between the spaces and the outside; a heat-sensitive element for infrared detection, which is arranged on the film at a position that corresponds to the light guide part; and a heat-sensitive element for temperature compensation, which is arranged on the film at a position that corresponds to the shielding part.

Abstract: Provided is a contact force sensor of high sensitivity and high accuracy. This contact force sensor is fabricated by machining of a silicon semiconductor material. The contact force sensor is provided with a sensor configuration having a base part, and a contact force transmission part formed in a direction orthogonal to this base part. A stress-electricity conversion element for converting displacement of the contact force transmission part to an electrical signal, formed in the base part of the sensor configuration, is also provided.

Abstract: Provided is a thin-film thermistor element including a Si substrate 2, a thermistor thin film 5 formed on the Si substrate 2, and an electrode 3 made of platinum, an alloy thereof or the like and formed on, under or inside the thermistor thin film 5. The electrode 3 is formed from a film deposited containing oxygen and nitrogen and then crystallized by heat treatment.

Abstract: Provided are: an infrared temperature sensor which is reduced in film deformation and achieves higher accuracy, while ensuring reliability; and a device which uses this infrared temperature sensor. An infrared temperature sensor is provided with: a film which absorbs infrared light; a case which covers and holds the film so as to form airtight spaces between itself and the film, and which is provided with a light guide part that has an opening and guides infrared light and a shielding part that has a shielding wall and shields infrared light; ventilation portion which allow air permeation between the spaces and the outside; a heat-sensitive element for infrared detection, which is arranged on the film at a position that corresponds to the light guide part; and a heat-sensitive element for temperature compensation, which is arranged on the film at a position that corresponds to the shielding part.

Abstract: A contact-type infrared temperature sensor 1 for high temperature measurement is provided with: a heat-resistant cylindrical member 2, having a cylindrical shape with one end as a closed section 21 and the other end as an open section 22; an infrared temperature detecting member 4, disposed facing and spaced from the closed section 21, and including no infrared filter; and an optical function section 33, having an infrared light inlet 31 disposed facing and spaced from the closed section 21 by a predetermined dimension, restricting infrared light radiated from the region spaced between the temperature-sensitive section and the infrared light inlet by the predetermined dimension to a range of the region by the infrared light inlet 31 and guiding the infrared light to the infrared temperature detecting member 4.

Abstract: Provided is a contact force sensor of high sensitivity and high accuracy. This contact force sensor is fabricated by machining of a silicon semiconductor material. The contact force sensor is provided with a sensor configuration having a base part, and a contact force transmission part formed in a direction orthogonal to this base part. A stress-electricity conversion element for converting displacement of the contact force transmission part to an electrical signal, formed in the base part of the sensor configuration, is also provided.

Abstract: Provided is a thin-film thermistor element including a Si substrate 2, a thermistor thin film 5 formed on the Si substrate 2, and an electrode 3 made of platinum, an alloy thereof or the like and formed on, under or inside the thermistor thin film 5. The electrode 3 is formed from a film deposited containing oxygen and nitrogen and then crystallized by heat treatment.