Abstract: A method of producing a temperature sensing device is provided. The method includes forming at least one silicon layer and at least one electrode or contact to define a thermistor structure. At least the silicon layer is formed by printing, and at least one of the silicon layer and the electrode or contact is supported by a substrate during printing thereof. Preferably, the electrodes or contacts are formed by printing, using an ink comprising silicon particles having a size in the range 10 nanometers to 100 micrometers, and a liquid vehicle composed of a binder and a suitable solvent. In some embodiments the substrate is an object the temperature of which is to be measured. Instead, the substrate may be a template, may be sacrificial, or may be a flexible or rigid material. Various device geometries are disclosed.

Abstract: The present invention is directed to a container suitable for use in the disinfection of blood glucose meters and other medical devices. In one embodiment, the container comprises a tray with a formed cavity in it, such that a blood glucose meter or medical device may be placed and retained in it. In certain related embodiments, the meter has been wrapped in a disinfection wipe prior to placement into the container.

Abstract: A thin film apparatus having a plurality of thin film cells is disclosed. Each thin film cell includes a crystalline layer and a surrounding layer. The crystalline layer has a shape of polygon. The surrounding layer is partially located on the crystalline layer. The crystalline layer is surrounded by the surrounding layer.

Abstract: A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more composite semiconductor layers. The composite semiconductor layer can include sub-layers of varying morphology, at least one of which can be formed by a group of columnar structures (e.g., nanowires). Another sub-layer in the composite semiconductor layer can be porous, continuous, or partially continuous.

Abstract: A device including one or more low-conducting layers is provided. A low-conducting layer can be located below the channel and one or more attributes of the low-conducting layer can be configured based on a minimum target operating frequency of the device and a charge-discharge time of a trapped charge targeted for removal by the low-conducting layer or a maximum interfering frequency targeted for suppression using the low-conducting layer. For example, a product of the lateral resistance and a capacitance between the low-conducting layer and the channel can be configured to be larger than an inverse of the minimum target operating frequency and the product can be smaller than at least one of: the charge-discharge time or an inverse of the maximum interfering frequency.

Abstract: A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit includes a biasing network, which supplies an individual bias voltage to each of the set of space-charge control electrodes. The bias voltage for each space-charge control electrode can be: selected based on the bias voltages of each of the terminals and a location of the space-charge control electrode relative to the terminals and/or configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal.

Abstract: A solution for disinfecting flowable products, such as liquids, suspensions, creams, colloids, emulsions, powders, and/or the like, as well as accessories and products relating thereto, such as containers, caps, brushes, applicators, and/or the like, using ultraviolet radiation is provided. In an embodiment, an ultraviolet impermeable cap is configured to enclose a volume corresponding to a flowable product. At least one ultraviolet radiation source can be mounted on the cap and be configured to generate ultraviolet radiation for disinfecting the enclosed area. The ultraviolet radiation source can be configured to only generate ultraviolet radiation when the volume is enclosed by the ultraviolet impermeable cap.

Abstract: A focal plane array (FPA) including a photodiode array (PDA) and a read out integrated circuit (ROIC). The PDA can include a plurality of conductive through-vias extending through the PDA and electrically isolated from the PDA. The plurality of conductive through-vias can be electrically coupled to circuitry on the ROIC circuit side. The plurality of conductive through-vias can include I/O interconnects such as BGA or other flip-chip bump interconnects that replace conventional wire bond connections, thereby reducing area requirements for bond pads on the ROIC and providing full area coverage of the ROIC circuitry by the PDA bulk material. Embodiments may therefore eliminate wire bonds using bonding to a plurality of metal traces for routing of these interconnects. In an embodiment, an optically transparent lid can include a plurality traces electrically coupled to the plurality of conductive through-vias.

Abstract: A semiconductor structure including an anodic aluminum oxide layer is described. The anodic aluminum oxide layer can be located between a semiconductor layer and another layer of material. The anodic aluminum oxide layer can include a plurality of pores extending to an adjacent surface of the semiconductor layer. The layer of material can penetrate at least some of the plurality of pores and directly contact the semiconductor layer. In an illustrative embodiment, the layer of material is a conductive material and the anodic aluminum oxide is located at a p-type contact.

Abstract: A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation.

Abstract: A device including one or more low-conducting layers is provided. A low-conducting layer can be located below the channel and one or more attributes of the low-conducting layer can be configured based on a minimum target operating frequency of the device and a charge-discharge time of a trapped charge targeted for removal by the low-conducting layer or a maximum interfering frequency targeted for suppression using the low-conducting layer. For example, a product of the lateral resistance and a capacitance between the low-conducting layer and the channel can be configured to be larger than an inverse of the minimum target operating frequency and the product can be smaller than at least one of: the charge-discharge time or an inverse of the maximum interfering frequency.

Abstract: Systems and methods for measuring spectra and other optical characteristics such as colors, translucence, gloss, and other characteristics of objects and materials such as skin. Instruments and methods for measuring spectra and other optical characteristics of skin or other translucent or opaque objects utilize an abridged spectrophotometer and improved calibration/normalization methods. Improved linearization methods also are provided, as are improved classifier-based algorithms. User control is provided via a graphical user interface. Product or product formulations to match the measured skin or other object or to transform the skin or other object are provided to lighten, darken, make more uniform and the like.

Abstract: Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.

Abstract: A multi-axis force-balance accelerometer has a proof mass included within an enclosure. An electrically conductive tether, flexible in 6 degrees of freedom, provides a compliant electrically conductive link between the proof mass and the enclosure. Mechanical stops limit a range of motion of the proof mass. The enclosure includes captive plates and force balancing control loops for positioning the proof mass in a null position within the enclosure for each of the 3 rectilinear reference axes, and in a null position within the enclosure for each of 3 angular reference axes. The electrically conductive tether is sufficiently mechanically compliant that, on deactivation of the force balancing control loops for the rectilinear axes, the proof mass falls so as to rest on the mechanical stops.

Abstract: Embodiments relate to systems and methods for image lag mitigation for a buffered direct injection readout circuit with current mirror. A photo detector device is coupled to a buffered direct injection (BDI) circuit, in which an operational amplifier and other elements communicate the output signal from the detector to subsequent stages. The BDI output is transmitted to a first current mirror, which can be implemented as a Säckinger current mirror. The first current mirror is coupled to a second current mirror, one of whose outputs is a fixed bias current. Image lag can be controlled by the fixed bias current, rather than the photocurrent produced directly by the optical detector. In aspects, the negative feedback provided by the first current mirror can increase the modulation of the second current mirror. This gain factor can reduce image lag to a significantly lower point than the lag experienced by known BDI-current-modulated readout circuitry without Säckinger current mirror.

Abstract: A system for treating a medium, such as water, with ultraviolet light is provided. The system can include an ultraviolet treatment chamber that is shaped to reduce reflections of the ultraviolet light within the ultraviolet treatment chamber and/or improve absorption of the ultraviolet light by the medium. Furthermore, the system can add an agent to the medium within the treatment chamber to further treat one or more contaminants that may be present within the medium. Still further, additional treatment, such as filtering the medium with a permeable material can be implemented within the treatment system.

Abstract: An improved light emitting heterostructure and/or device is provided, which includes a contact layer having a contact shape comprising one of: a clover shape with at least a third order axis of symmetry or an H-shape. The use of these shapes can provide one or more improved operating characteristics for the light emitting devices. The contact shapes can be used, for example, with contact layers on nitride-based devices that emit light having a wavelength in at least one of: the blue spectrum or the deep ultraviolet (UV) spectrum.

Abstract: A patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers, is provided. The patterned surface can include a set of substantially flat top surfaces and a plurality of openings. Each substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the openings can have a characteristic size between approximately 0.1 micron and five microns.

Abstract: The condition of internal or hidden material layers or interfaces is monitored and used for control of a process that changes a condition of a material system. The material system has multiple component materials, such as layers or embedded constituents, or can be represented with multiple layers to model spatial distributions in the material properties. The material condition changes as a result of a process performed on the material, such as by cold working, or from functional operation. Sensors placed proximate to the test material surface or embedded between material layers are used to monitor a material property using magnetic, electric, or thermal interrogation fields. The sensor responses are converted into states of the material condition, such as temperature or residual stress, typically with a precomputed database of sensor responses.