Abstract: A heterostructure for use in fabricating an optoelectronic device is provided. The heterostructure includes a layer, such as an n-type contact or cladding layer, that includes thin sub-layers inserted therein. The thin sub-layers can be spaced throughout the layer and separated by intervening sub-layers fabricated of the material for the layer. The thin sub-layers can have a distinct composition from the intervening sub-layers, which alters stresses present during growth of the heterostructure.

Abstract: A structured substrate configured for epitaxial growth of a semiconductor layer thereon is provided. Structures can be formed on a side of the structured substrate opposite that of the growth surface for the semiconductor layer. The structures can include cavities and/or pillars, which can be patterned, randomly distributed, and/or the like. The structures can be configured to modify one or more properties of the substrate material such that growth of a higher quality semiconductor layer can be obtained.

Abstract: The invention relates to temperature sensors, in particular high-temperature sensors, having an optionally coated substrate, at least one resistor structure, and at least two connection contacts. The connection contacts electrically contact the resistor structure, and the substrate is made of zirconium oxide or a zirconium oxide ceramic stabilized with oxides of a trivalent metal and a pentavalent metal. The substrate is coated with an insulation layer and the resistor structure and the free regions of the insulation layer, on which no resistor structure is disposed, are at least partially coated with a ceramic intermediate layer. A protective layer and/or a cover is disposed on the ceramic intermediate layer. At least one electrode may be disposed, at least at one connection contact, alongside the resistor structure on the substrate. The invention also relates an exhaust-gas system for controlling and/or regulating an engine, particularly a motor vehicle engine, containing these temperature sensors.

Abstract: A composite substrate configured for epitaxial growth of a semiconductor layer thereon is provided. The composite substrate includes multiple substrate layers formed of different materials having different thermal expansion coefficients. The thermal expansion coefficient of the material of the semiconductor layer can be between the thermal coefficients of the substrate layer materials. The composite substrate can have a composite thermal expansion coefficient configured to reduce an amount of tensile stress within the semiconductor layer at room temperature and/or an operating temperature for a device fabricated using the heterostructure.

Abstract: A method for monitoring at least one ambient condition at a remote site, the method executed at least in part by a computer, configures at least one sensing device at the remote site according to one or more setup instructions transmitted wirelessly from a host processor at a first site, wherein the configuration associates the at least one sensing device with a personal communications device wherein the at least one sensing device is energizable to wirelessly transmit, to the personal communications device, a sensor signal that is indicative of the at least one ambient condition according to the setup instructions. In response to the transmitted sensor signal, information about the at least one ambient condition displays on the personal communications device that is associated with the at least one sensing device.

Abstract: A contact to a semiconductor including sequential layers of Cr, Ti, and Al is provided, which can result in a contact with one or more advantages over Ti/Al-based and Cr/Al-based contacts. For example, the contact can: reduce a contact resistance; provide an improved surface morphology; provide a better contact linearity; and/or require a lower annealing temperature, as compared to the prior art Ti/Al-based contacts.

Abstract: An apparatus for determining the total amount of two or more substances in a liquid, at least one of said substances comprising a fluorescent substance, said apparatus comprising: a mass spectrometer device; a fluorometer device; and a processing means; wherein said mass spectrometer device is adapted to obtain a periodic measurement of the total amount of said two or more substances in the liquid, said fluorometer device being adapted to detect the fluorescent response of said at least one fluorescent substance in said liquid to an excitation signal, said processing means being programmed to determine a calibration factor by comparing a measurement obtained by the fluorometer device with said periodic measurement of the total amount of said two or more substances present obtained by the mass spectrometer device, the processing means subsequently using said calibration factor to determine measurements representative of the total amount of both fluorescent and non-fluorescent substances present in the liquid b

Abstract: A system and a method for determining an attitude of a device undergoing dynamic acceleration is presented. A first attitude measurement is calculated based on a magnetic field measurement received from a magnetometer of the device and a first acceleration measurement received from a first accelerometer of the device. A second attitude measurement is calculated based on the magnetic field measurement received from the magnetometer of the device and a second acceleration measurement received from a second accelerometer of the device. A correction factor is calculated based at least in part on a difference of the first attitude measurement and the second attitude measurement. The correction factor is then applied to the first attitude measurement to produce a corrected attitude measurement for the device.

Abstract: A stamping die for hot stamping a material includes a profiled stamping surface, wherein the stamping die includes at least one thermally insulating substrate, on which an electrically conductive structure having a heating resistor is arranged, and wherein the electrically conductive structure is covered by an electrically insulating film. The surface of the electrically insulating film includes the profiled stamping surface and the electrically insulating film covers at least the heating resistor such that the electrically insulating film with the stamping surface can be electrically heated by the heating resistor. A method for hot stamping a material using such a stamping die includes heating the resistor to a temperature between 100° C. and 800° C.

Abstract: A pixel cell includes a first integration capacitor, a second integration capacitor, a photo detector and a transistor. The first integration capacitor includes a first lead operatively coupled to the photo detector. The second integration capacitor includes a first lead. The transistor is operatively coupled between the leads of the first and second integration capacitors for enabling current flow between the photo detector and the second integration capacitor only once a threshold voltage is met on the first integration capacitor.

Abstract: A profiled surface for improving the propagation of radiation through an interface is provided. The profiled surface includes a set of large roughness components providing a first variation of the profiled surface having a characteristic scale approximately an order of magnitude larger than a target wavelength of the radiation. The profiled surface also includes a set of small roughness components superimposed on the set of large roughness components and providing a second variation of the profiled surface having a characteristic scale on the order of the target wavelength of the radiation.

Abstract: A solution for disinfecting electronic devices is provided. An ultraviolet radiation source is embedded within an ultraviolet absorbent case. While the electronic device is within the ultraviolet absorbent case, ultraviolent radiation is directed at the electronic device. A monitoring and control system monitors a plurality of attributes for the electronic device, which can include: a frequency of usage for the device, a biological activity at a surface of the device, and a disinfection schedule history for the device. Furthermore, the monitoring and control system can detect whether the device is being used. Based on the monitoring, the monitoring and control system controls the ultraviolet radiation directed at the electronic device.

Abstract: An optical probe comprising an elongate hollow body having an internal chamber for receiving an optical sensor and/or an light emission device, such as one or more optical fibres, an optical window being provided at a first end of the hollow body, said optical window defining a wall of said internal chamber for transmitting light therethrough, and an ultrasonic transducer provided at a second end of the elongate body opposite said first end for cleaning said optical window via ultrasonic vibrations, wherein said ultrasonic transducer is provided with an entry aperture extending through the ultrasonic transducer, through which entry aperture optical fibres, cables or wires may pass to enter said internal chamber.

Abstract: An apparatus with time controlled color change indication comprises an apparatus includes a disposable, limited or restricted use product and an oxygen sensing color changeable dye disposed on a portion of the apparatus, the dye being translucent or having a first color upon application and for a defined time thereafter and the dye changing color after exposure to oxygen for the defined time. For example, a packaging for containing a product for human consumption has a portion with a color changeable dye disposed thereon. The dye changes color after being exposed to oxygen for a controlled and predetermined period of time indicating that the product for human consumption should no longer be consume or has decreased in freshness, quality of taste or potency.

Abstract: A device and system for generating a broadband excitation signal and corresponding excitation field to a substance under test in an NMR system is presented. The excitation signal is generated, according to a broadband transmitter, to a coil in the NMR system. A corresponding broadband receiver is also presented that acquires a response signal resulting from a response field emanating from the substance under test. Neither the transmitter nor the receiver require that the frequency of operation be determined according to a particular configuration of electrical devices to determine a resonance characteristic that tunes to a particular operational frequency. Rather, the operational frequency is determined according to control and driver devices triggered according to command and control signals in the case of the transmitter, and according to reactive elements, that are not configured as a tuned circuit, in the case of the receiver.

Abstract: A solution for disinfecting a screen of an item using ultraviolet radiation is provided. The solution can provide an electronic device including a screen utilized by a user of the electronic device. The screen can be an ultraviolet transparent screen that covers at least some of the internal portion of the electronic device and a set of ultraviolet radiation sources can be located adjacent to the transparent screen. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed towards an external surface of the ultraviolet transparent screen. The electronic device can further include a monitoring and control system, which can manage the ultraviolet radiation generation by monitoring a set of attributes relating to the external surface of the screen and controlling, based on the monitoring, ultraviolet radiation directed at the external surface of the screen.

Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

Abstract: Methods, apparatuses and systems sensed signal processing are disclosed. One apparatus includes a plurality of sensors, code space ROM (read only memory), code space RAM, and data space RAM (random access memory), wherein the data space RAM comprises a reconfigurable pointer table for maintaining a pointer address to instructions of one or more sensor data processing functions within the code space ROM and code space RAM. The apparatus further includes a processor, where the processor operative to receive sensor data from the plurality of sensors, retrieve the one or more sensor data processing functions from the code space ROM and code space RAM as pointed to by the reconfigurable pointer table, and perform processing of the sensor data using the retrieved one or more sensor data processing functions.

Abstract: Apparatuses, methods and systems apparatus for sensing an orientation are disclosed. One apparatus includes an accelerometer, wherein the accelerometer generates a sensed acceleration of the accelerometer and a gyroscope, wherein the gyroscope generates a sensed orientation of the gyroscope. The apparatus further includes a first adaptive filter, the first adaptive filter operative to receive at least the sensed acceleration and the sensed orientation of the gyroscope, and generate a first orientation (Q) of the apparatus, a second adaptive filter, the second adaptive filter operative to receive at least the sensed acceleration and the sensed orientation of the gyroscope, and generate a second orientation (Q?) of the apparatus, wherein a tuning for the first adaptive filter is different than a tuning for the second adaptive filter.

Abstract: A semiconductor structure comprising a buffer structure and a set of semiconductor layers formed adjacent to a first side of the buffer structure is provided. The buffer structure can have an effective lattice constant and a thickness such that an overall stress in the set of semiconductor layers at room temperature is compressive and is in a range between approximately 0.1 GPa and 2.0 GPa. The buffer structure can be grown using a set of growth parameters selected to achieve the target effective lattice constant a, control stresses present during growth of the buffer structure, and/or control stresses present after the semiconductor structure has cooled.