Abstract: Sensing particular gases in a mixture uses precise modulated heating. Sensor relative responses are compared at different temperatures and compared with known relative responses to identify gases and concentrations. Heater current sensors provide feedback control and microprocessor inputs. A processor controls complex impedances and varied frequencies in the sensors. Sensor responses at varied complex impedances and at varied frequencies are compared with known responses at those impedances and frequencies to determine existence and concentration of particular gases. Heater and sensor buses are separate or combined.

Abstract: A metal-organic chemical vapor deposition (MOCVD) growth with temperature controlled layer is described. A substrate or susceptor can have a temperature controlled layer formed thereon to adjust the temperature uniformity of a MOCVD growth process used to epitaxially grow semiconductor layers. In one embodiment, the substrate and/or the susceptor can be profiled with a shape that improves temperature uniformity during the MOCVD growth process. The profiled shape can be formed with material that provides a desired temperature distribution to the substrate that is in accordance with a predetermined temperature profile for the substrate for a particular MOCVD process.

Abstract: A light emitting heterostructure including a partially relaxed semiconductor layer is provided. The partially relaxed semiconductor layer can be included as a sublayer of a contact semiconductor layer of the light emitting heterostructure. A dislocation blocking structure also can be included adjacent to the partially relaxed semiconductor layer.

Abstract: A solution for fabricating a structure including a light guiding structure is provided. The light guiding structure can be formed of a fluoropolymer-based material and include one or more regions, each of which is filled with a fluid transparent to radiation having a target wavelength, such as ultraviolet radiation. The region(s) can be created using a filler material, which is at least substantially enclosed by the fluoropolymer-based material and subsequently removed from each region. The structure can further include at least one optical element integrated into the light guiding structure.

Abstract: An optoelectronic device module with improved light emission of approximately 4? steradians is provided. In one embodiment, the optoelectronic device module includes a first and a second set of optoelectronic devices. Each optoelectronic device includes a first contact and a second contact. A contact element including a first lateral side and a second lateral side connects the optoelectronic devices. The first contact of each optoelectronic device in the first set of optoelectronic devices is connected to the first lateral side of the contact element and the first contact of each optoelectronic device in the second set of optoelectronic devices is connected to the second lateral side of the contact element.

Abstract: A solution for generating ultraviolet diffusive radiation is provided. A diffusive ultraviolet radiation illuminator includes at least one ultraviolet radiation source located within a reflective cavity that includes a plurality of surfaces. At least one of the plurality of surfaces can be configured to diffusively reflect at least 70% of the ultraviolet radiation and at least one of the plurality of surfaces can be configured to transmit at least 30% of the ultraviolet radiation and reflect at least 10% of the ultraviolet radiation.

Abstract: An optoelectronic device with a multi-layer contact is described. The optoelectronic device can include a n-type semiconductor layer having a surface. A mesa can be located over a first portion of the surface of the n-type semiconductor layer and have a mesa boundary. A n-type contact region can be located over a second portion of the surface of the n-type semiconductor contact layer entirely distinct from the first portion, and be at least partially defined by the mesa boundary. A first n-type metallic contact layer can be located over at least a portion of the n-type contact region in proximity of the mesa boundary, where the first n-type metallic contact layer forms an ohmic contact with the n-type semiconductor layer. A second n-type metallic contact layer can be located over a second portion of the n-type contact region, where the second n-type metallic contact layer is formed of a reflective metallic material.

Abstract: A high temperature sensor includes a substrate, at least two terminal contacts and at least one resistive structure, wherein the terminal contacts and the at least one resistive structure are disposed on a first side of the substrate, and at least one of the resistive structures is electrically contacted by the terminal contacts, wherein at least one electrode is disposed on each of the two terminal contacts next to the resistive structure on the first side of the substrate. The electrodes are electrically connected to the terminal contacts, respectively, or at least one electrode is disposed on at least one terminal contact next to the resistive structure on the first side of the substrate, wherein the electrode is designed in one piece with the resistive structure. The invention also relates to a high temperature sensor and a method for producing such a sensor.

Abstract: A device including a flexible substrate and an ultraviolet radiation system is disclosed. The ultraviolet radiation system can include at least one ultraviolet radiation source configured to emit ultraviolet radiation towards a surface to be disinfected, an ultraviolet transparent component configured to focus the ultraviolet radiation, and a control system configured to control the at least one ultraviolet radiation source. The device can include a hand article, such as a glove.

Abstract: A waveguide structure for evanescent wave microscopy and/or spectroscopy, comprising an optically transparent core layer, a lower dielectric cladding layer and an upper dielectric cladding layer arranged on opposite sides of the core layer. The core layer has a refractive index higher than the refractive indices of the cladding layers. The upper cladding layer is made of an organic material. A sample well is arranged on an upper surface of the core layer formed by a cavity in the upper cladding layer, the sample well being adapted to contain a sample medium with one or more sample objects. The core layer is made of a first dielectric inorganic material, and the upper cladding layer has a refractive index which closely matches the refractive index of the sample medium. A method for manufacturing such waveguide structure, and a measurement system comprising the waveguide structure are also disclosed.

Abstract: A detection system for detecting a residential pest, the detection system may include a trigger module that is configured to generate triggering signals for inducing a residential pest to increase an acoustic-detectable activity of the residential pest; and a sensor that is configured sense signals responsive to a generation of the triggering signals.

Abstract: The invention relates to a method for providing distance information of a scene with a time-of-flight camera (1), comprising the steps of emitting a modulated light pulse towards the scene, receiving reflections of the modulated light pulse from the scene, evaluating a time-of-flight information for the received reflections of the modulated light pulse, and deriving distance information from the time-of-flight information for the received reflections, whereby a spread spectrum signal is applied to a base frequency of the modulation of the light pulse, and the time-of-flight information is evaluated under consideration of the a spread spectrum signal applied to the base frequency of the modulation of the light pulse. The invention further relates to a time-of-flight camera (1) for providing distance information from a scene, whereby the time-of-flight camera (1) performs the above method.

Abstract: A lateral/vertical device is provided. The device includes a device structure including a device channel having a lateral portion and a vertical portion. The lateral portion of the device channel can be located adjacent to a first surface of the device structure, and one or more contacts and/or a gate can be formed on the first surface. The device structure also includes a set of insulating layers located in the device structure between the lateral portion of the device channel and a second surface of the device structure opposite the first surface. An opening in the set of insulating layers defines a transition region between the lateral portion of the device channel and a vertical portion of the device channel. A contact to the vertical portion of the device channel can be located on the second surface.

Abstract: An electronic device and a method of fabricating an electronic device are disclosed. The device includes a body of semiconductor material, and a conductive material defining at least three conducting contacts to form respective terminals. The semiconductor material and the conducting contacts overlap at least partially to define the device, so that the electrical characteristics of the device between any pair of terminals correspond to those of a varistor. The body of semiconductor material may be a layer deposited by printing or coating. The varistor characteristics between each pair of terminals enable switching of an electrical current between one terminal and any two other terminals in such a manner that when there is a positive current into a first terminal, there is a negligible current through a second terminal at which a positive potential is applied and a positive current out of a third terminal which is held at a negative potential with respect to the second terminal.

Abstract: A solid-state light source (SSLS) with an integrated short-circuit protection approach is described. A device can include a SSLS having an n-type semiconductor layer, a p-type semiconductor layer and a light generating structure formed there between. A field-effect transistor (FET) can be monolithically connected in series with the SSLS. The FET can have a saturation current that is greater than the normal operating current of the SSLS and less than a predetermined protection current threshold specified to protect the SSLS and the FET.

Abstract: A semiconductor device including a device channel with a gate-drain region having a carrier concentration that varies laterally along a direction from the gate contact to the drain contact is provided. Lateral variation of the carrier concentration can be implemented by laterally varying one or more attributes of one or more layers located in the gate-drain region of the device.

Abstract: A solid-state light source (SSLS) with light modulation control is described. A SSLS device can include a main p-n junction region configured for recombination of electron-hole pairs for light emission. A supplementary p-n junction region is proximate the main p-n junction region to supplement the recombination of electron-hole pairs, wherein the supplementary p-n junction region has a smaller electron-hole life time than the electron-hole life time of the main p-n junction region. The main p-n junction region and the supplementary p-n junction region operate cooperatively in a light emission state and a light turn-off-state. In one embodiment, the recombination of electron-hole pairs occurs in the main p-n junction region during a light emission state, and the recombination of electron-hole pairs occurs in the supplementary p-n junction region light during the light turn off-state.

Abstract: A measuring device for measuring a level of a liquid in a container is disclosed. The measuring device comprises a sensor line and a float. The sensor line has a plurality of magnetic-field sensors, at least one of the plurality of magnetic-field sensors uses a magnetoresistive effect or is a Hall effect sensor or a magnetoresistor or an extraordinary magnetoresistive sensor. The float is movable along and relative to the sensor line between a first measuring location and a second measuring location. The float has a magnet generating a magnetic field extending substantially parallel to the sensor line at both the first measuring location and the second measuring location.

Abstract: A light emitting device having improved light extraction is provided. The light emitting device can be formed by epitaxially growing a light emitting structure on a surface of a substrate. The substrate can be scribed to form a set of angled side surfaces on the substrate. For each angled side surface in the set of angled side surfaces, a surface tangent vector to at least a portion of each angled side surface in the set of angled side surfaces forms an angle between approximately ten and approximately eighty degrees with a negative of a normal vector of the surface of the substrate. The substrate can be cleaned to clean debris from the angled side surfaces.

Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.