Abstract: A device comprising a semiconductor layer including a plurality of compositional inhomogeneous regions is provided. The difference between an average band gap for the plurality of compositional inhomogeneous regions and an average band gap for a remaining portion of the semiconductor layer can be at least thermal energy. Additionally, a characteristic size of the plurality of compositional inhomogeneous regions can be smaller than an inverse of a dislocation density for the semiconductor layer.

Abstract: A superlattice layer including a plurality of periods, each of which is formed from a plurality of sub-layers is provided. Each sub-layer comprises a different composition than the adjacent sub-layer(s) and comprises a polarization that is opposite a polarization of the adjacent sub-layer(s). In this manner, the polarizations of the respective adjacent sub-layers compensate for one another. Furthermore, the superlattice layer can be configured to be at least partially transparent to radiation, such as ultraviolet radiation.

Abstract: A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.

Abstract: A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher. In one embodiment, the semiconductor layer is used to form an optoelectronic device.

Abstract: A device for measuring the concentrations of volatile organic compounds (VOCs) in air. The device includes a sample chamber for accepting a sample of air; at least one ionization source for ionizing VOCs in the sample; an ionic liquid trap containing an ionic liquid that captures the ionized VOCs; a circuit for generating a electric current through the device to run the ionization and capture of the ionized VOCs; and a chemical sensor for detecting and measuring concentrations of the VOCs in the sample of air. The device, which may be hand-held, portable, or designed to sit on a bench top, may be used on any animal, including humans.

Abstract: An imager is provided that includes an integrated circuit. The integrated circuit includes at least one metal layer, a signal line extending in a first direction, and a pixel cell. The pixel cell includes imaging pixels and a metal interconnect. The imaging pixels include first, second, third, and fourth imaging pixels, arranged in two rows and two columns, each imaging pixel having a metal-insulator-metal (MiM) capacitor disposed on the at least one metal layer, the first and second imaging pixels being traversed by the signal line to receive signals from the signal line. The metal interconnect extends in a second direction different than the first direction and is coupled to the signal line and the third imaging pixel to transmit the signals to the third imaging pixel. The third imaging pixel is adjacent to the first imaging pixel and is disposed in a different column or row than the second imaging pixel.

Abstract: A circuit having a buffered direct injection (BDI) module is provided for image lag mitigation. The BDI module includes an optical detector coupled to a buffer. The buffer has a pixel amplifier which includes no more than two transistors. The BDI module includes a first current mirror coupled to the BDI module. The first current mirror generates a modulating current based on the output of the optical detector. The BDI module further includes a second current mirror coupled to the first current mirror. The second current mirror is configured to generate either an amplified or attenuated photocurrent operable to optimize an imaging time and scene brightness of the optical detector. The BDI module further includes a reset circuit, coupled to the second current mirror, and being configured to reset an integration capacitor which integrates an image signal based on the output of the optical detector.

Abstract: An ultraviolet illuminator for providing a cleaning treatment to a medical device is disclosed. The ultraviolet illuminator can include an ultraviolet cleaning treatment system that operates in conjunction with at least one ultraviolet radiation source and sensor to clean surfaces of a medical device for purposes of disinfection, sterilization, and/or sanitization. The ultraviolet illuminator is suitable for a wide variety of medical devices, instruments and equipment. Stethoscopes and medical instrument probes are illustrative examples of some devices that can be used with the ultraviolet illuminator.

Abstract: According to embodiments of the present application, a color changeable dye can comprise a redox indicator, a reduction reaction initiator, an electron donor, an oxygen scavenger, an indicator barrier agent, a thickening agent and an agent to facilitate mixing. The color changeable dye is a first color in the presence of oxygen, capable of changing to a second color upon reduction in a substantially oxygen free environment, and capable of changing back to the first color after exposure to oxygen for a period of time corresponding to the intended use time of a disposable or limited use product. Methods of making and using the color changeable dye and apparatuses incorporating such dye are also disclosed.

Abstract: A lateral semiconductor device and/or design including a space-charge generating layer and an electrode or a set of electrodes located on an opposite side of a device channel as contacts to the device channel is provided. The space-charge generating layer is configured to form a space-charge region to at least partially deplete the device channel in response to an operating voltage being applied to the contacts to the device channel.

Abstract: A device having a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions.

Abstract: A battery pack includes a housing connected to a plurality of battery compartments. Each battery compartment configured to accept a battery therein. Each battery compartment has a first electrical contact positioned on a first end of the housing and a second electrical contact positioned on a second end, opposite the first end, of the housing. The electrical contacts are configured for electrical connection to respective ends of a respective battery. An outlet is coupled to the housing for supplying power from the electrical contacts. A printed circuit board is in communication with the electrical contacts configured to connect batteries to supply a predetermined voltage to the outlet when a positive end of each respective battery within the battery compartments is in electrical communication with the respective first electrical contact. The printed circuit board can be configured to dictate series or parallel connection of the electrical contacts.

Abstract: A camera comprises an image plane for capturing shortwave infrared wavelengths. The image plane captures only a portion of a shortwave infrared wavelength band, and excludes other wavelengths. A method of designing a camera is also disclosed.

Abstract: A device is provided in which a light emitting semiconductor structure is excited by an electron beam that impacts a region of a lateral surface of the light emitting semiconductor structure at an angle to the normal of the lateral surface that is non-zero. The non-zero angle can be configured to cause excitation in a desired region of the light emitting semiconductor structure. The device can include wave guiding layer(s) and/or other features to improve the light generation and/or operation of the device.

Abstract: A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range.

Abstract: A motor includes a position-sensing magnetostrictive element that extends along a stator bore. A slider slides in the stator bore and includes a stack of motor magnets. The stack includes a first stack end that provides a magnetic field pattern that magnetizes a region of the magnetostrictive element. The motor includes shield elements such as a non-magnetic shield tube and a magnetic flux diverter.

Abstract: A method using Long Wave Infrared Imaging Polarimetry for improved mapping and perception of a roadway or path and for perceiving or detecting obstacles comprises recording raw image data using a polarimeter to obtain polarized images of the roadway or area. The images are then corrected for non-uniformity, optical distortion, and registration. IR and polarization data products are computed, and the resultant data products are converted to a multi-dimensional data set for exploitation. Contrast enhancement algorithms are applied to the multi-dimensional imagery to form enhanced object images. The enhanced object images may then be displayed to a user, and/or an annunciator may announce the presence of an object. Further, the vehicle may take evasive action based upon the presence of an object in the roadway.

Abstract: An image processing system has a sensor array with a plurality of pixels. A distinct circuit is associated with each pixel in the sensor array. The circuits are designed such that across the plurality of circuits, there are a plurality of distinct sensitivities to irradiance from a scene to be captured which are spatially pseudo-randomly ordered relative to each other. The image processing system also comprises an image reconstruction algorithm. A method is also disclosed.

Abstract: A device including a plurality of perforations to a semiconductor channel is provided. The device includes a semiconductor structure forming the semiconductor channel. Additionally, the device includes a source contact, a drain contact, and a gate contact to the semiconductor channel. The plurality of perforations can be located in the semiconductor structure below the gate contact. Furthermore, a perforation in the plurality of perforations can extend into the semiconductor structure beyond a location of the semiconductor channel.

Abstract: A low noise infrared photodetector has an epitaxial heterostructure that includes a photodiode and a transistor. The photodiode includes a high sensitivity narrow bandgap photodetector layer of first conductivity type, and a collection well of second conductivity type in contact with the photodetector layer. The transistor includes the collection well, a transfer well of second conductivity type that is spaced from the collection well and the photodetector layer, and a region of first conductivity type between the collection and transfer wells. The collection well and the transfer well are of different depths, and are formed by a single diffusion.