Patents Assigned to Seoul Opto Device Co., Ltd.
-
Publication number: 20120187424Abstract: Exemplary embodiments of the present invention relate to light emitting diodes including a plurality of light emitting cells on a substrate to be suitable for AC driving. The light emitting diode includes a substrate and a plurality of light emitting cell formed on the substrate. Each light emitting cell includes a first region at a boundary of the light emitting cell and a second region opposite to the first region. A first electrode pad is formed in the first region of the light emitting cell. A second electrode pad having a linear shape is disposed to face the first electrode pad while regionally defining a peripheral region together with the boundary of the second region. A wire connects the first electrode pad to the second electrode pad between two adjacent light emitting cells.Type: ApplicationFiled: July 20, 2011Publication date: July 26, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Jong Kyu Kim, So Ra Lee, Ho Jun Suk, Jin Cheol Shin
-
Patent number: 8227272Abstract: Disclosed is a light emitting device having a plurality of light emitting cells and a package having the same mounted thereon. The light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Accordingly, heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Meanwhile, since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series.Type: GrantFiled: June 10, 2009Date of Patent: July 24, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chung Hoon Lee, Lacroix Yves, Hyung Soo Yoon, Young Ju Lee
-
Publication number: 20120168803Abstract: Provided is a semiconductor light-emitting diode including a semiconductor layer having a light-emitting structure; and an ohmic electrode incorporating a nanodot layer, a contact layer, a diffusion-preventing layer and a capping layer on the semiconductor layer. The nanodot layer is formed on the N-polar surface of the semiconductor layer and is formed from a substance comprising at least one of Ag, Al and Au. Also provided is a production method therefor. In the ohmic electrode which has the multi-layer structure comprising the nanodot layer/contact layer/diffusion-preventing layer/capping layer in the semiconductor light-emitting diode of this type, the nanodot layer constitutes the N-polar surface of a nitride semiconductor and improves the charge-injection characteristics such that outstanding ohmic characteristics can be obtained.Type: ApplicationFiled: September 7, 2010Publication date: July 5, 2012Applicants: POSTECH ACADEMY-INDUSTRY FOUNDATION, SEOUL OPTO DEVICE CO., LTD.Inventors: Jong Lam Lee, Yang Hee Song, Jun Ho Son, Buem Joon Kim
-
Patent number: 8211724Abstract: The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.Type: GrantFiled: November 23, 2009Date of Patent: July 3, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Kwang Choong Kim, Won Cheol Seo, Dae Won Kim, Dae Sung Kal, Kyung Hee Ye
-
Publication number: 20120160817Abstract: An approach is provided for fabricating a light emitting diode using a laser lift-off apparatus. The approach includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature.Type: ApplicationFiled: March 2, 2012Publication date: June 28, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Youn KIM, Joon Hee LEE, Jong Kyun YOU, Hwa Mok KIM
-
Publication number: 20120161176Abstract: Exemplary embodiments of the present invention provide light emitting diode (LED) chips and a method of fabricating the same. An LED chip according to an exemplary embodiment includes a substrate; a light emitting structure arranged on the substrate, and an alternating lamination bottom structure arranged under the substrate. The alternating lamination bottom structure includes a plurality of dielectric pairs, each of the dielectric pairs including a first material layer having a first refractive index and a second material layer having a second refractive index, the first refractive index being greater than the second refractive index.Type: ApplicationFiled: March 28, 2011Publication date: June 28, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Min Chan HEO, Sang Ki JIN, Jong Kyu KIM, Jin Cheol SHIN, So Ra LEE, Sum Geun LEE
-
Publication number: 20120153257Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device with reduced defect density and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The manufacturing method is a method for manufacturing a semiconductor device, in which a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The sapphire substrate is etched to form uneven patterns, and the template layer including a nitride semiconductor layer and a GaN layer is formed on the sapphire substrate in which the uneven patterns are formed.Type: ApplicationFiled: August 27, 2010Publication date: June 21, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Ok Hyun Nam, Geun Ho Yoo
-
Publication number: 20120153259Abstract: A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.Type: ApplicationFiled: February 27, 2012Publication date: June 21, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chung Hoon LEE, Ki Bum NAM, Dae Sung KAL
-
Publication number: 20120146081Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a metallic protective film layer with a thickness of at least 10 microns may be formed on the lateral and/or bottom sides of the vertical GaN LED. Further, a metallic substrate may be used instead of a sapphire substrate. A metallic support layer may be formed to protect the element from being distorted or damaged. Furthermore, a P-type electrode may be partially formed on a P—GaN layer in a mesh form.Type: ApplicationFiled: February 17, 2012Publication date: June 14, 2012Applicants: POSTECH FOUNDATION, SEOUL OPTO-DEVICE CO., LTD.Inventor: Jong Lam LEE
-
Publication number: 20120145992Abstract: Disclosed herein are gallium nitride based light emitting diodes having interlayers with high dislocation density and a method of fabricating the same. The light emitting diode includes: a substrate; a buffer layer disposed on the substrate; an n-type contact layer disposed on the buffer; a p-type contact layer disposed on the n-type contact layer; an active layer interposed between the n-type contact layer and the p-type contact layer; a first lower semiconductor layer interposed between the buffer layer and the n-type contact layer; and a first interlayer interposed between the first lower semiconductor layer and the n-type contact layer, wherein the first interlayer has lower dislocation density than the buffer layer and higher dislocation density than the first lower semiconductor layer. This way, the interlayers with higher dislocation density prevent dislocations formed within the first lower semiconductor layer from being transferred to the n-type contact layer.Type: ApplicationFiled: August 25, 2010Publication date: June 14, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Hong Jae Yoo, Kyung Hee Ye
-
Publication number: 20120145991Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device and a manufacturing method thereof. A template layer is formed on a corresponding off-axis of the sapphire crystal plane tilted in a predetermined direction to reduce the defect density of the semiconductor device and improve the internal quantum efficiency and light extraction efficiency thereof. In the method for manufacturing the semiconductor device, a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The crystal plane of the sapphire substrate is tilted in a predetermined direction, and the template layer includes a nitride semiconductor layer and a GaN layer on the tilted sapphire substrate.Type: ApplicationFiled: August 27, 2010Publication date: June 14, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Ok Hyun Nam, Jong Jin Jang
-
Patent number: 8198643Abstract: The present invention relates to a light emitting element with arrayed cells, a method of manufacturing the same, and a light emitting device using the same. The present invention provides a light emitting element including a light emitting cell block with a plurality of light emitting cells connected in series or parallel on a single substrate, and a method of manufacturing the same, wherein each of the plurality of light emitting cells includes an N-type semiconductor layer and a P-type semiconductor layer, and the N-type semiconductor layer of one light emitting cell is electrically connected to the P-type semiconductor layer of another adjacent light emitting cell. Further, the present invention provides a light emitting device including a light emitting element with a plurality of light emitting cells connected in series.Type: GrantFiled: May 11, 2011Date of Patent: June 12, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chung-Hoon Lee, Keon-Young Lee, Lacroix Yves
-
Publication number: 20120139444Abstract: The disclosed light emitting device comprises at least one first light emitting element including at least one light emitting chip for emitting light having a wavelength of 400 to 500 nm and a phosphor; and at least one second light emitting element disposed adjacent to the first light emitting element to emit light having a wavelength of 560 to 880 nm.Type: ApplicationFiled: June 2, 2011Publication date: June 7, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Dae Won KIM, Do Hyung KIM, Dae Sung KAL, In Kyu PARK
-
Publication number: 20120142134Abstract: Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas.Type: ApplicationFiled: June 1, 2011Publication date: June 7, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Kwang Joong KIM, Chang Suk HAN, Seung Kyu CHOI, Ki Bum NAM, Nam Yoon KIM, Kyung Hae KIM, Ju Hyung YOON
-
Publication number: 20120132888Abstract: A light emitting device includes a metal backing layer, a reflective electrode layer disposed on the metal backing layer, and a plurality of nanorods disposed on the reflective electrode layer. Each nanorod includes a p-semiconductor layer, an active layer, and an n-semiconductor layer, which are sequentially stacked on the reflective electrode layer. The light emitting device further includes an anti-reflection electrode layer disposed on the nanorods, and quantum dots disposed between the nanorods. The method includes sequentially growing the n-semiconductor layer, the active layer, and the p-semiconductor layer on a substrate; forming the nanorods by etching the p-semiconductor layer using a mask pattern; sequentially forming the reflective electrode layer and the metal backing layer on the p-semiconductor layer and then removing the substrate; disposing quantum dots between the nanorods; and forming the anti-reflection electrode layer on the nanorods.Type: ApplicationFiled: November 28, 2011Publication date: May 31, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Woo Chul KWAK, Soon Ho AN, Hwa Mok KIM, Eun Jin KIM, Jae Hoon SONG
-
Publication number: 20120135551Abstract: Disclosed herein is a light emitting diode. The light emitting diode includes a support substrate, semiconductor layers formed on the support substrate, and a metal pattern located between the support substrate and the lower semiconductor layer. The semiconductor layers include an upper semiconductor layer of a first conductive type, an active layer, and a lower semiconductor layer of a second conductive type. The semiconductor layers are grown on a sacrificial substrate and the support substrate is homogeneous with the sacrificial substrate.Type: ApplicationFiled: February 7, 2012Publication date: May 31, 2012Applicant: Seoul Opto Device Co., Ltd.Inventors: Won Cheol SEO, Chang Youn KIM, Yeo Jin YOON
-
Patent number: 8188489Abstract: The present invention discloses a light emitting diode (LED) including a plurality of light emitting cells arranged on a substrate. The LED includes half-wave light emitting units each including at least one light emitting cell, each half-wave light emitting unit including first and second terminals respectively arranged at both ends thereof; and full-wave light emitting units each including at least one light emitting cell, each full-wave light emitting units including third and fourth terminals respectively formed at both ends thereof. The third terminal of each full-wave light emitting unit is electrically connected to the second terminals of two half-wave light emitting units, and the fourth terminal of each full-wave light emitting unit is electrically connected to the first terminals of other two half-wave light emitting units.Type: GrantFiled: October 28, 2009Date of Patent: May 29, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chung Hoon Lee, Dae Won Kim, Dae Sung Kal, Won Cheol Seo, Kyung Hee Ye, Yeo Jin Yoon
-
Patent number: 8189635Abstract: A laser diode having nano patterns is disposed on a substrate. A first conductive-type clad layer is disposed on the substrate, and a second conductive-type clad layer is disposed on the first conductive-type clad layer. An active layer is interposed between the first conductive-type clad layer and the second conductive-type clad layer. Column-shaped nano patterns are arranged at a surface of the second conductive-type clad layer to form a laser diode such as a distributed feedback laser diode.Type: GrantFiled: April 27, 2010Date of Patent: May 29, 2012Assignees: Seoul Opto Device Co., Ltd., The University of TokushimaInventor: Shiro Sakai
-
Patent number: 8188687Abstract: Disclosed is an improved light-emitting device for an AC power operation. A conventional light emitting device employs an AC light-emitting diode having arrays of light emitting cells connected in reverse parallel. The arrays in the prior art alternately repeat on/off in response to a phase change of an AC power source, resulting in short light emission time during a ½ cycle and the occurrence of a flicker effect. An AC light-emitting device according to the present invention employs a variety of means by which light emission time is prolonged during a ½ cycle in response to a phase change of an AC power source and a flicker effect can be reduced. For example, the means may be switching blocks respectively connected to nodes between the light emitting cells, switching blocks connected to a plurality of arrays, or a delay phosphor.Type: GrantFiled: May 9, 2006Date of Patent: May 29, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chung Hoon Lee, James S. Speck, Hong San Kim, Jae Jo Kim, Sung Han Kim, Jae Ho Lee
-
Publication number: 20120127718Abstract: An AC light emitting device is disclosed. The AC light emitting device includes at least four substrates. Serial arrays each of which has a plurality of light emitting cells connected in series are positioned on the substrates, respectively. Meanwhile, first connector means electrically connect the serial arrays formed on respective different substrates. At least two array groups each of which has at least two of the serial arrays connected in series by the first connector means are formed. The at least two array groups are connected in reverse parallel to operate. Accordingly, there is provided an AC light emitting device capable of being driven under an AC power source.Type: ApplicationFiled: January 30, 2012Publication date: May 24, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Dae Won KIM, Dae Sung KAL