Patents Assigned to Seoul Opto Device Co., Ltd.
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Patent number: 8183075Abstract: The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.Type: GrantFiled: July 21, 2011Date of Patent: May 22, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chang Youn Kim, Shiro Sakai, Hwa Mok Kim, Joon Hee Lee, Soo Young Moon, Kyoung Wan Kim
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Patent number: 8183592Abstract: A light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series. Further, it is possible to provide a light emitting device capable of being directly driven by an AC power source by connecting the serially connected light emitting cell arrays in reverse parallel to each other.Type: GrantFiled: September 21, 2011Date of Patent: May 22, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chung Hoon Lee, Lacroix Yves, Hyung Soo Yoon, Young Ju Lee
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Patent number: 8183072Abstract: Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.Type: GrantFiled: November 23, 2009Date of Patent: May 22, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Won Cheol Seo, Kwang Choong Kim, Kyung Hee Ye
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Publication number: 20120119243Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED).Type: ApplicationFiled: May 17, 2011Publication date: May 17, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chang Yeon KIM, Da Hye KIM, Hong Chul LIM, Joon Hee LEE, Jong Kyun YOU
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Patent number: 8173459Abstract: Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device comprises a substrate and a plurality of light emitting cells formed on the substrate. Each of the light emitting cells includes a lower semiconductor layer, an upper semiconductor layer positioned on one region of the lower semiconductor layer, and an active layer interposed between the lower and upper semiconductor layers. Furthermore, an isolating insulative layer is filled in regions between the plurality of light emitting cells to isolate the light emitting cells from one another. Further, wirings electrically connect the light emitting cells with one another. Each of the wirings connects the lower semiconductor layer of one light emitting cell and the upper semiconductor layer of another light emitting cell adjacent to the one light emitting cell.Type: GrantFiled: December 16, 2010Date of Patent: May 8, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Dae Won Kim, Dae Sung Kal
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Publication number: 20120104424Abstract: Disclosed are a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. This method comprises preparing a first substrate of sapphire or silicon carbide having an upper surface with an r-plane, an a-plane or an m-plane. The first substrate has stripe-shaped anti-growth patterns on the upper surface thereof, and recess regions having sidewalls of a c-plane between the anti-growth patterns. Nitride semiconductor layers are grown on the substrate having the recess regions, and the nitride semiconductor layers are patterned to form the light emitting cells separated from one another. Accordingly, there is provided a light emitting device having non-polar light emitting cells with excellent crystal quality.Type: ApplicationFiled: January 6, 2012Publication date: May 3, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Won Cheol SEO, Kwang Choong KIM, Kyung Hee YE
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Patent number: 8168988Abstract: The present invention relates to a light emitting element with arrayed cells, a method of manufacturing the same, and a light emitting device using the same. The present invention provides a light emitting element including a light emitting cell block with a plurality of light emitting cells connected in series or parallel on a single substrate, and a method of manufacturing the same, wherein each of the plurality of light emitting cells includes an N-type semiconductor layer and a P-type semiconductor layer, and the N-type semiconductor layer of one light emitting cell is electrically connected to the P-type semiconductor layer of another adjacent light emitting cell. Further, the present invention provides a light emitting device including a light emitting element with a plurality of light emitting cells connected in series.Type: GrantFiled: October 25, 2010Date of Patent: May 1, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chung-Hoon Lee, Keon-Young Lee, Lacroix Yves
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Publication number: 20120091478Abstract: A light emitting device includes a plurality of light emitting cells which are formed on a substrate and each of which has an N-type semiconductor layer and a P-type semiconductor layer located on a portion of the N-type semiconductor layer. The plurality of light emitting cells are bonded to a submount substrate. Heat generated from the light emitting cells can be easily dissipated, so that a thermal load on the light emitting device can be reduced. Since the plurality of light emitting cells are electrically connected using connection electrodes or electrode layers formed on the submount substrate, it is possible to provide light emitting cell arrays connected to each other in series. Further, it is possible to provide a light emitting device capable of being directly driven by an AC power source by connecting the serially connected light emitting cell arrays in reverse parallel to each other.Type: ApplicationFiled: September 21, 2011Publication date: April 19, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Chung Hoon LEE, Lacroix YVES, Hyung Soo YOON, Young Ju LEE
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Patent number: 8153509Abstract: Disclosed is a method of fabricating a light emitting diode using a laser lift-off apparatus. The method includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature. Thus, during a laser lift-off process, focusing of the laser beam can be easily achieved and the epitaxial layers are prevented from cracking or fracture. The laser lift-off process is performed by a laser lift-off apparatus including a heater.Type: GrantFiled: January 26, 2010Date of Patent: April 10, 2012Assignee: Seoul Opto Device Co., ltd.Inventors: Chang Youn Kim, Joon Hee Lee, Jong Kyun You, Hwa Mok Kim
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Patent number: 8154008Abstract: A light emitting diode (LED) for minimizing crystal defects in an active region and enhancing recombination efficiency of electrons and holes in the active region includes non-polar GaN-based semiconductor layers grown on a non-polar substrate. The semiconductor layers include a non-polar N-type semiconductor layer, a non-polar P-type semiconductor layer, and non-polar active region layers positioned between the N-type semiconductor layer and the P-type semiconductor layer. The non-polar active region layers include a well layer and a barrier layer with a superlattice structure.Type: GrantFiled: July 24, 2008Date of Patent: April 10, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Chung Hoon Lee, Ki Bum Nam, Dae Sung Kal
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Publication number: 20120080695Abstract: Exemplary embodiments of the present invention disclose a light emitting diode (LED) and a method of fabricating the same. The LED includes a substrate, a semiconductor stack arranged on the substrate, the semiconductor stack including an upper semiconductor layer having a first conductivity type, an active layer, and a lower semiconductor layer having a second conductivity type, isolation trenches separating the semiconductor stack into a plurality of regions, connectors disposed between the substrate and the semiconductor stack, the connectors electrically connecting the plurality of regions to one another, and a distributed Bragg reflector (DBR) having a multi-layered structure, the DBR disposed between the semiconductor stack and the connectors. The connectors are electrically connected to the semiconductor stack through the DBR, and portions of the DBR are disposed between the isolation trenches and the connectors.Type: ApplicationFiled: April 5, 2011Publication date: April 5, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Sum Geun Lee, Jin Cheol Shin, Jong Kyu Kim, Chang Youn Kim
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Patent number: 8143640Abstract: The present invention relates to a gallium nitride (GaN) compound semiconductor light emitting element (LED) and a method of manufacturing the same. The present invention provides a vertical GaN LED capable of improving the characteristics of a horizontal LED by means of a metallic protective film layer and a metallic support layer. According to the present invention, a thick metallic protective film layer with a thickness of at least 10 microns is formed on the lateral and/or bottom sides of the vertical GaN LED to protect the element against external impact and to easily separate the chip. Further, a metallic substrate is used instead of a sapphire substrate to efficiently release the generated heat to the outside when the element is operated, so that the LED can be suitable for a high-power application and an element having improved optical output characteristics can also be manufactured. A metallic support layer is formed to protect the element from being distorted or damaged due to impact.Type: GrantFiled: July 28, 2011Date of Patent: March 27, 2012Assignees: Seoul Opto Device Co., Ltd., Postech FoundationInventor: Jong Lam Lee
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Publication number: 20120057156Abstract: Provided is a spectrum detector capable of being miniaturized and which does not require complicated optical axis alignment. The spectrum detector of the present invention comprises: a substrate; a photodetector formed on the substrate and including a semiconductor having a plurality of convex portions; and a wavelength detection circuit for detecting a wavelength of light transmitted through the plurality of convex portions, from light incident on the photodetector. According to the present invention, a small-sized spectrum detector can be provided which can easily detect a peak wavelength distribution included in light of an unknown wavelength, without the use of optical equipment such as a grating or prism, thus dispensing with the need for the optical axis alignment of a complex optical system.Type: ApplicationFiled: August 17, 2009Publication date: March 8, 2012Applicants: SEOUL OPTO DEVICE CO., LTD.Inventors: Shiro Sakai, Won Chul Seo, Dae Won Kim
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Publication number: 20120056221Abstract: The present invention provides a light emitting element, which includes a light emitting diode (LED) chip and a wavelength-converting layer arranged on a surface of the LED chip, the wavelength-converting layer to convert a wavelength of light emitted from the LED chip, wherein at least a portion of the wavelength-converting layer has a width greater than the width of the surface of the LED chip.Type: ApplicationFiled: November 16, 2010Publication date: March 8, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventor: Eu Gene KIM
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Patent number: 8129848Abstract: Disclosed are a light emitting device having a plurality of light emitting cells connected in series and a method of fabricating the same. The light emitting device includes a buffer layer formed on a substrate. A plurality of rod-shaped light emitting cells are located on the buffer layer to be spaced apart from one another. Each of the light emitting cells has an n-layer, an active layer and a p-layer. Meanwhile, wires connect the spaced light emitting cells in series or parallel. Accordingly, arrays of the light emitting cells connected in series are connected to be driven by currents flowing in opposite directions. Thus, there is provided a light emitting device that can be directly driven by an AC power source.Type: GrantFiled: April 30, 2010Date of Patent: March 6, 2012Assignee: Seoul Opto Device Co., Ltd.Inventor: Chung Hoon Lee
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Patent number: 8129917Abstract: An AC light emitting device is disclosed. The AC light emitting device includes at least four substrates. Serial arrays each of which has a plurality of light emitting cells connected in series are positioned on the substrates, respectively. Meanwhile, first connector means electrically connect the serial arrays formed on respective different substrates. At least two array groups each of which has at least two of the serial arrays connected in series by the first connector means are formed. The at least two array groups are connected in reverse parallel to operate. Accordingly, there is provided an AC light emitting device capable of being driven under an AC power source.Type: GrantFiled: September 5, 2007Date of Patent: March 6, 2012Assignee: Seoul Opto Device Co., Ltd.Inventors: Dae Won Kim, Dae Sung Kal
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Patent number: 8129207Abstract: Disclosed are a light emitting diode having a thermal conductive substrate and a method of fabricating the same. The light emitting diode includes a thermal conductive insulating substrate. A plurality of metal patterns are spaced apart from one another on the insulating substrate, and light emitting cells are located in regions on the respective metal patterns. Each of the light emitting cells includes a P-type semiconductor layer, an active layer and an N-type semiconductor layer. Meanwhile, metal wires electrically connect upper surfaces of the light emitting cells to adjacent metal patterns. Accordingly, since the light emitting cells are operated on the thermal conductive substrate, a heat dissipation property of the light emitting diode can be improved.Type: GrantFiled: September 16, 2011Date of Patent: March 6, 2012Assignee: Seoul Opto Device Co., Ltd.Inventor: Jae-Ho Lee
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Publication number: 20120049223Abstract: Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer.Type: ApplicationFiled: August 15, 2011Publication date: March 1, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Jeong Hee YANG, Kyoung Wan KIM, Yeo Jin YOON, Ye Seul KIM, Sang Hyun OH, Duk Il SUH, Keum Ju LEE, Jin Woong LEE, Da Yeon JEONG
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Publication number: 20120037881Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.Type: ApplicationFiled: January 3, 2011Publication date: February 16, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Kwang Joong KIM, Chang Suk HAN, Kyung Hee YE, Seung Kyu CHOI, Ki Bum NAM, Nam Yoon KIM, Kyung Hae KIM, Ju Hyung YOON
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Publication number: 20120032223Abstract: An ultraviolet light emitting diode package for emitting ultraviolet light is disclosed. The ultraviolet light emitting diode package comprises an LED chip emitting light with a peak wavelength of 350 nm or less, and a protective member provided so that surroundings of the LED chip is covered to protect the LED chip, the protective member having a non-yellowing property to energy from the LED chip.Type: ApplicationFiled: October 20, 2011Publication date: February 9, 2012Applicant: SEOUL OPTO DEVICE CO., LTD.Inventors: Jeong Suk BAE, Jae Jo KIM, Do Hyung KIM, Dae Sung KAL