Patents Assigned to Seoul Semiconductor Co., Ltd.
  • Publication number: 20200013931
    Abstract: A light emitting diode package including a light emitting diode chip, a phosphor layer disposed to cover an upper portion of the light emitting diode chip, the phosphor layer being configured to convert a wavelength of light emitted from the light emitting diode chip, and a color filter layer disposed to cover an upper portion of the phosphor layer, the color filter being configured to block light having a predetermined wavelength range from being emitted through the phosphor layer.
    Type: Application
    Filed: February 1, 2018
    Publication date: January 9, 2020
    Applicant: Seoul Semiconductor Co., Ltd.
    Inventors: Seung Sik HONG, Motonobu TAKEYA
  • Patent number: 10529901
    Abstract: An LED package allows a fluorescent material to be uniformly distributed around an LED chip on a base when a filling space inside a transparent wall surrounding the LED chip is filled with the fluorescent material. The LED package includes a base, at least one LED chip mounted on the base, a transparent wall formed on the base and having a filling space around the LED chip, and a fluorescent material, with which the filling space is filled to cover the LED chip.
    Type: Grant
    Filed: June 30, 2014
    Date of Patent: January 7, 2020
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventor: Jung Hwa Jung
  • Publication number: 20190393198
    Abstract: A method of manufacturing a display apparatus according to an exemplary embodiment includes the steps of forming a plurality of light emitting diode chips on a first manufacturing substrate, coupling the plurality of the light emitting diode chips onto a second manufacturing substrate, separating the first manufacturing substrate from the plurality of the light emitting diode chips, and transferring the plurality of light emitting diode chips coupled onto the second manufacturing substrate to a substrate including first and second substrate electrodes.
    Type: Application
    Filed: March 7, 2018
    Publication date: December 26, 2019
    Applicant: Seoul Semiconductor Co., Ltd.
    Inventor: Motonobu TAKEYA
  • Patent number: 10510933
    Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second and a third phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, the second phosphor, and the third phosphor. At least one of the second and third phosphor is a nitride based phosphor that includes at least one of MSiN2, MSiON2, and M2Si5N8, where M is one of Ca, Sr, Ba, Zn, Mg, and Eu.
    Type: Grant
    Filed: August 12, 2019
    Date of Patent: December 17, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Yong Oh, Ho Jun Byun, Hyuck Jun Kim, Ki Bum Nam, Su Yeon Kim
  • Patent number: 10503010
    Abstract: A light-emitting apparatus including a light-emitting element and a lens covering the light-emitting element. The lens includes an upper surface having a convex shape and a lower surface including a cavity to which light emitted from the light-emitting elements is incident, in which the cavity includes an apex facing an upper surface of the light-emitting element and configured to reduce Fresnel reflections emitted vertically.
    Type: Grant
    Filed: May 12, 2017
    Date of Patent: December 10, 2019
    Assignees: Seoul Semiconductor Co., Ltd., InteLED Corp.
    Inventor: David Pelka
  • Patent number: 10497845
    Abstract: A display apparatus and a method of manufacturing the same are disclosed. The display apparatus includes: a light emitting diode chip; and a first substrate electrode and a second substrate electrode disposed under the light emitting diode chip and electrically connected to the light emitting diode chip, the first substrate electrode and the second substrate electrode being electrically insulated from each other, wherein at least a portion of at least one of the first substrate electrode and the second substrate electrode protrudes above its surroundings. The light emitting diode chip can have a high current density, despite a small amount of current being supplied to the light emitting diode chip through reduction in luminous area.
    Type: Grant
    Filed: March 26, 2018
    Date of Patent: December 3, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Motonobu Takeya, Jong Ik Lee
  • Patent number: 10424697
    Abstract: A light-emitting diode package includes a light-emitting diode chip disposed in a housing, a first phosphor configured to emit green light, and a second phosphor configured to emit red light. White light is configured to be formed by a synthesis of light emitted from the light-emitting diode chip, the first phosphor, and the second phosphor. The second phosphor has a chemical formula of A2MF6:Mn4+, A is one of Li, Na, K, Rb, Ce, and NH4, and M is one of Si, Ti, Nb, and Ta, and the Mn4+ of the second phosphor has a mole range of about 0.02 to about 0.035 times the M.
    Type: Grant
    Filed: April 1, 2019
    Date of Patent: September 24, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Yong Oh, Ho Jun Byun, Hyuck Jun Kim, Ki Bum Nam, Su Yeon Kim
  • Patent number: 10418348
    Abstract: A light emitting diode package including a housing, a first light emitting diode chip and a second light emitting diode chip disposed in the housing, and a wavelength conversion part including a phosphor configured to absorb light emitted from the first light emitting diode chip and emit light having a different wavelength than the light emitted from the first light emitting diode chip, in which the light emitted from the first light emitting diode chip has a shorter wavelength than light emitted from the second light emitting diode chip, and the phosphor has a fluorescence intensity of 10 or less at a peak wavelength of light emitted from the second light emitting diode chip, with reference to a maximum fluorescence intensity of 100 at a wavelength of 425 nm to 475 nm on an excitation spectrum of the second light emitting diode chip.
    Type: Grant
    Filed: September 19, 2017
    Date of Patent: September 17, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Myung Jin Kim, Kwang Yong Oh, Seung Ryeol Ryu
  • Patent number: 10407315
    Abstract: Briefly, embodiments of systems and/or methods for synthesis of zinc oxide are described, including a chamber enclosure, a wafer substrate holder, a fluid handling system, and sequences for implementation.
    Type: Grant
    Filed: April 14, 2016
    Date of Patent: September 10, 2019
    Assignee: SEOUL SEMICONDUCTOR CO., LTD.
    Inventors: Jacob J. Richardson, Evan C. O'Hara
  • Patent number: 10401556
    Abstract: The present invention relates to a light source module, which has excellent lighting efficiency and is slim, and a backlight unit having the same. The present invention comprises a light emitting unit electronically connected to a substrate through a bottom surface; a wavelength conversion unit formed on the light emitting unit; and a reflection unit formed on the light emitting unit, wherein the reflection unit has a light emitting surface through which light from the light emitting unit is emitted, the light emitting surface being formed by exposing at least one surface of the wavelength conversion unit.
    Type: Grant
    Filed: September 30, 2014
    Date of Patent: September 3, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventor: Yoon Seop Lee
  • Patent number: 10393347
    Abstract: A luminaire includes a mixing chamber having an array of apertures in one wall, a light source to supply light into the mixing chamber, and an array of optics outside the mixing chamber, each positioned to cooperate with a respective one of the apertures to emit light from the mixing chamber as a beam. The shape, size, and/or direction of the output light beam are controllably varied by controlling the shape, size, and/or position of each aperture relative to its associated optic.
    Type: Grant
    Filed: March 11, 2014
    Date of Patent: August 27, 2019
    Assignee: SEOUL SEMICONDUCTORS CO., LTD.
    Inventors: Pablo Benitez, Juan Carlos Minano, Ruben Mohedano, Julio C. Chaves, Waqidi Falicoff
  • Patent number: 10378725
    Abstract: A light emitting module includes a substrate, a light emitting diode chip, and a lens. The light emitting diode chip is disposed on the substrate. The lens is coupled to the substrate and covers the light emitting diode chip. The lens includes a light incident surface and a light exit surface. The light incident surface receives light from the light emitting diode chip. The light exit surface outputs the light from the lens. The light incident surface includes a concave light incident surface and a convex light incident surface. The concave light incident surface overlaps the light emitting diode. The convex light incident surface extends from the concave light incident surface.
    Type: Grant
    Filed: August 16, 2017
    Date of Patent: August 13, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Jang Weon Lee, Sung Ki Hwang
  • Patent number: 10383184
    Abstract: A light-emitting diode driving module includes an LED driving circuit to activate light-emitting diodes driven by a modified rectified voltage, and to adjust driving currents conducted to driving nodes to the light emitting diodes; a driving current controller to receive a dimming signal indicative of a degree of modulation of the rectified voltage, and to control currents conducted to the driving nodes depending on the dimming signal; and a current blocking circuit to block the currents of the driving nodes when a dimming level of the dimming signal decreases lower than a first threshold value, and unblock the currents of the driving nodes when the dimming level increases above a second threshold value higher than the first threshold value.
    Type: Grant
    Filed: October 29, 2018
    Date of Patent: August 13, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: SungHo Jin, HyungJin Lee, SangWook Han
  • Patent number: 10362650
    Abstract: A driving circuit for a light emitting diode connected to a TRIAC dimmer configured to modulate an input AC voltage depending on a selected dimming level including a rectifier configured to full-wave rectify the modulated AC voltage output from the TRIAC dimmer to generate and output a driving voltage, a driving module configured to receive the driving voltage of the rectifier to detect the selected dimming level and drive a plurality of light emitting diode groups depending on the detected dimming level, and a bleeder circuit configured to provide a bleeder current to the TRIAC dimmer, in which the bleeder circuit is configured to provide the bleeder current only for a preset on-duty time.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: July 23, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Bea Lim, Sung Ho Jin, Sang Wook Han, Young Do Jong
  • Patent number: 10356865
    Abstract: A lighting apparatus including a light emitting diode connected to a dimmer configured to modulate an input AC voltage depending on a selected dimming level, a rectifier configured to full-wave rectify the modulated AC voltage output from the dimmer to generate and output a driving voltage, a driving module configured to receive the driving voltage of the rectifier to detect the selected dimming level, and select one of three driving modes of a stop mode, a resistance driving mode, and a sequential driving mode depending on the detected dimming level, and a plurality of light emitting diode groups configured to emit light depending on a control of the driving module.
    Type: Grant
    Filed: July 19, 2018
    Date of Patent: July 16, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Kwang Bea Lim, Sung Ho Jin, Sang Wook Han, Young Do Jong
  • Patent number: 10342080
    Abstract: A light-emitting diode (LED) lighting apparatus including at least one LED group including a plurality of LEDs, a rectifier configured to rectify an alternating current (AC) voltage and generate a driving voltage for the at least one LED group, and a system-in-package (SIP) configured to drive and control the at least one LED group, in which the SIP is connected to the at least one LED group and the rectifier, and includes a driving module, a functional module, and a first resistor disposed on a single substrate.
    Type: Grant
    Filed: December 19, 2017
    Date of Patent: July 2, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Sung Ho Jin, Sang Wook Han, Hyung Jin Lee
  • Patent number: 10332949
    Abstract: Disclosed are a display apparatus and a method of manufacturing the same. The display apparatus includes a light emitting part including a plurality of light emitting diodes; and a thin film transistor (TFT) panel part configured to drive the plurality of light emitting diodes. A first side of the light emitting part and a first side of the TFT panel part are coupled to each other so as to face each other. The plurality of light emitting diodes are electrically connected to the plurality of TFTs, respectively.
    Type: Grant
    Filed: July 6, 2017
    Date of Patent: June 25, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Motonobu Takeya, Jong Ik Lee, Young Hyun Kim
  • Patent number: 10323803
    Abstract: A light emitting device and a vehicular lamp are provided. The light emitting device comprises: a first light emitting unit; a second light emitting unit separated from the first light emitting unit; and a sidewall surrounding side surfaces of the first and second light emitting units while adjoining the side surfaces of the first and second light emitting units, wherein the first light emitting unit and the second light emitting unit emit light have different peak wavelengths.
    Type: Grant
    Filed: November 18, 2015
    Date of Patent: June 18, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Yoon Seop Lee, Da Hye Kim, Sang Hong Lee, Byoung Kyu Park, Dae Wook Kim, Jae Hyun Park
  • Patent number: 10316431
    Abstract: The present invention provides a method of growing an ingot of group III nitride. Group III nitride crystals such as GaN are grown by the ammonothermal method on both sides of a seed to form an ingot and the ingot is sliced into wafers. The wafer including the first-generation seed is sliced thicker than the other wafers so that the wafer including the first-generation seed does not break. The wafer including the first-generation seed crystal can be used as a seed for the next ammonothermal growth.
    Type: Grant
    Filed: October 20, 2015
    Date of Patent: June 11, 2019
    Assignees: SixPoint Materials, Inc., Seoul Semiconductor Co., Ltd.
    Inventors: Tadao Hashimoto, Edward Letts, Sierra Hoff
  • Patent number: 10321529
    Abstract: An alternating current sequential drive type LED lighting device having improved flicker performance and being capable of reducing the light output deviation of the LED lighting device generated during operation intervals by removing nonluminous intervals of the LED lighting device by means of a loop-back compensation unit.
    Type: Grant
    Filed: March 30, 2017
    Date of Patent: June 11, 2019
    Assignee: Seoul Semiconductor Co., Ltd.
    Inventors: Young Do Jung, Sung Ho Jin, Sang Wook Han, Hye Man Jung