Abstract: The present invention relates to a contacting structure on a lightly-doped P-type region of a semiconductor component, this P-type region being positively biased during the on-state operation of said component, including, on the P region a layer of a platinum silicide, or of a metal silicide having with the P-type silicon a barrier height lower than or equal to that of the platinum silicide.

Abstract: An integrated circuit memory fabrication process and structure, in which salicidation is performed on the periphery (and optionally on the ground lines) of a memory chip, but not on the transistors of the memory cells.

Abstract: A method of operating a cache memory is described in a system in which a processor is capable of executing a plurality of processes, each process including a sequence of instructions. In the method a cache memory is divided into cache partitions, each cache partition having a plurality of addressable storage locations for holding items in the cache memory. A partition indicator is allocated to each process identifying which, if any, of said cache partitions is to be used for holding items for use in the execution of that process. When the processor requests an item from main memory during execution of said current process and that item is not held in the cache memory, the item is fetched from main memory and loaded into one of the plurality of addressable storage locations in the identified cache partition.

Abstract: An integrated circuit comprising a logic processor and a fuzzy logic coprocessor is disclosed which processes a plurality of analog inputs. The logic processor and fuzzy logic processor are combined in the form of a single integrated circuit. The integrated circuit accepts a plurality of analog inputs which are digitized and provided as output to a display peripheral or are used to control an actuator peripheral such as a control unit for a valve. The integrated circuit includes means for loading or exchanging informational elements with other units of an installation.

Abstract: A MOS capacitor comprises a semiconductor substrate, a first well region of a first conductivity type formed in the substrate, at least one doped region formed in the first well region, and an insulated gate layer insulatively disposed over a surface of the first well region. The at least one doped region and the insulated gate layer respectively form a first and a second electrode of the capacitor. The first well region is electrically connected to the at least one doped region to be at a same electrical potential of the first terminal of the capacitor.

Abstract: This invention relates to a device for organizing access to a bus connecting a memory to at least two entities asynchronous binary signals representing requests for access to the bus. The device supplies binary signals to authorize the access to an entity based on a priority determination between the different requests and includes a priority decoder in wired logic associated with an input register. A loading of the state of the access request signals happens, if an access request is present while a read or write cycle of the memory is executed, upon the arrival of a pulse on a signal issued by a memory controller associated with the memory and indicative of the end of a memory cycle.

Abstract: A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these components, so-called autonomous components, are formed in insulated sections of the substrate, whose lateral insulation is provided by a diffused wall of the second conductivity type and whose bottom is insulated through a dielectric layer interposed between the bottom surface of the substrate and the metallization.

Abstract: A process for manufacturing an integrated circuit provides for the formation of a matrix of floating-gate non-volatile memory cells having dual polysilicon levels, with the two polysilicon levels being isolated by a gate dielectric layer (4) and an interpoly dielectric layer (9) therebetween, and for the concurrent formation of one type of thick-oxide transistor (21) having an active area (7) in regions peripheral to the matrix. The process of the invention provides for removal, during the step of defining the first-level polysilicon (5), the polysilicon (5) from the active area (7) of the thick-oxide transistor (21), so that the gate oxide of the transistor (21) results from the superposition of the first (4) and second (9) dielectric layers.

Abstract: A MOS technology power device includes a semiconductor material layer of a first conductivity type, a conductive insulated gate layer covering the semiconductor material layer, and a plurality of elementary functional units. The conductive insulated gate layer includes a first insulating material layer placed above the semiconductor material layer, a conductive material layer placed above the first insulating material layer, and a second insulating material layer placed above the conductive material layer. Each elementary functional unit includes an elongated body region of a second conductivity type formed in the semiconductor material layer. Each elementary functional unit further includes an elongated window in the insulated gate layer extending above the elongated body region. Each elongated body region includes a source region doped with dopants of the first conductivity type, intercalated with a portion of the elongated body region wherein no dopant of the first conductivity type are provided.

Abstract: A computer system has compact instructions avoiding the need for redundant bit locations and needing simple decoding. Logic circuitry is arranged to respond to an instruction set comprising a plurality of selectable instructions of different bit lengths. Each instruction is based on a format of predetermined bit length and a predetermined sequence of instruction fields each of a respective predetermined bit length. Some instructions omit a selected one of the fields and include an identifier of less bit length than the omitted field to indicate which field is omitted. Thus this bit length of the instruction is compressed. The logic circuitry is operable to restore the omitted field on execution of the instruction.

Abstract: A method for physically marking, on silicon wafers, of integrated circuits deemed to be defective during a testing step, so as to modify the visual appearance of the surface of these circuits, wherein the marking is done by the exposure of the circuits to a laser beam. The disclosure also relates to an instrument enabling the method to be implemented.

Abstract: A computer system has a processor, a cache and a main memory. A cache coherency mechanism ensures that the contents of the cache are coherent with respect to main memory by the provision of cache coherency instructions which each specify: 1) an operation to be executed on the contents of a location in the cache; and 2) an address in main memory. The operation is executed for the contents of the location in the cache which could be filled by an access to that address in main memory if the executing process normally has access to that address in main memory, regardless of whether or not the contents of the specified address in main memory are held at that location in the cache. This provides an extra degree of freedom because it is not necessary for the cache coherency operation to be requested in respect of a particular address stored in the cache. The instruction can specify any address which would map onto that cache location.

Abstract: A method for manufacturing a semiconductor device having improved adhesion at an interface between layers of dielectric material, comprising the steps of forming a first layer of dielectric material on at least one part of a structure defined in a semiconductor substrate and forming a second dielectric material layer superimposed on the least one part of the first layer. The method further includes the step of forming, in the part where the first and second layers are superimposed, an intermediate adhesion layer comprising a ternary compound of silicon, oxygen and carbon. The formation of the adhesion layer takes place at low temperature and in an atmosphere kept essentially free of oxidative substances different from those serving to provide the silicon and the carbon to the layer. Preferably the layer is formed by the plasma enhanced chemical vapour deposition technique.

Abstract: A method for the formation of a region of silicon dioxide on a substrate of monocrystalline silicon. The epitaxial growth of a silicon layer, the opening of holes in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes until a silicon diaphragm, attached to the substrate along the edges and separated therefrom by a space, is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes to have diameters smaller than the thickness of the diaphragm and to be closed by the formation of a silicon dioxide layer by vapor-phase deposition at atmospheric pressure.

Abstract: The present invention relates to a latch including two first N-channel transistors connected to a low supply potential and controlled by a clock signal; two second transistors respectively connecting the two first transistors to an inverted output terminal and to a non-inverted output terminal and respectively controlled by a data line and a complementary data line; two third P-channel transistors respectively coupling the two second transistors to a high supply potential and cross-controlled by the output terminals; and circuitry for maintaining the states of the output terminals when the first transistors are non-conductive.

Abstract: A method for producing an isolation region on a surface of a semiconductor substrate includes: forming and patterning a masking layer; forming an isolating layer so that a notch exists between an edge of the masking layer and the upper surface of the isolating layer; forming a filling layer over the masking layer and the isolating layer, so that it completely fills the notch; forming field protection spacers adjacent to the masking layer; partially removing the filling layer to expose the upper surface of the isolation layer, the notch remaining filled with a part of the filling layer; and selectively etching the isolating layer from its upper limit until this upper limit is substantially coplanar with the upper surface of the semiconductor substrate. A transistor may be produced in a semiconductor substrate, having a minimum gate length, a minimum width isolation region and wide field isolation region.

Abstract: In order to reduce the number of lines of a standard bus while, at the same time, preserving the compatibility of the communications protocol, the system uses a modified bus. The modification consists in eliminating two power supply lines and in creating a line assigned to a functional signal that is complementary to one of the functional signals of the system. The supply potentials are regenerated from the functional signal and the complementary signal. The disclosed system can be applied notably to systems using I2C buses such as systems using chip-card readers.

Abstract: The electrical performance of a dielectric film for capacitive coupling in an integrated structure is enhanced by forming the polycrystalline electrically conductive layer coupled with the dielectric film substantially unigranular over the coupling area, commonly to be defined by patterning the stacked dielectric and conductive layers. The process forms a polycrystalline silicon film having exceptionally large grains of a size on the same order of magnitude as the dimensions of the patterned details. These exceptionally large grains are obtained by preventing the formation of “precursor nuclei” of subsequent grain formation and growth at the deposition interface with the dielectric that are apparently formed during the first instants of silicon CVD deposition and by successively growing the crystallites at a sufficiently low annealing temperature.

Abstract: An ATM routing switch has a buffer circuit for holding cells located on queues at output ports, the buffer having a first reserve buffer capacity for cells of a first type requiring integrity of cell transmission and a first designation for use in determining a permitted path through the network, a second reserve buffer capacity for cells of the first type having a second designation for use in determining a different permitted path in the network and a third reserve buffer capacity for cells of a second type accepting some loss of cells in transmission, flow control circuitry operating to limit input of cells of either the first or second type if predetermined thresholds for the first, second or third buffer capacities are reached.

Abstract: The present invention relates to a triac network wherein each triac includes an N-type semiconductor substrate, containing a first thyristor comprised of NPNP regions and a second thyristor comprised of PNPN regions, and surrounded with a P-type deep diffusion. A P-type well contains an N-type region, on the front surface side. A first metallization corresponds to a first main electrode, a second metallization corresponds to a second main electrode, a third metallization covers the N-type region and is connected to a gate terminal, and a fourth metallization connects the P-type well to the upper surface of the deep diffusion.