Abstract: The method inlcudes the steps of forming a sacrificial buried region of insulating material on a substrate of monocrystalline semiconductor material, epitaxially growing a first semiconductor material layer on the substrate, the first semiconductor material layer including a polycrystalline region over the sacrificial buried region and a monocrystalline region elsewhere, the substrate and the semiconductor material layer surrounding the sacrificial buried region on all sides, and removing the sacrificial buried region. The portion of the polycrystalline region surrounded by the trench thus forms a suspended structure separated and isolated thermally from the rest of the semiconductor material layer. Using microelectronics processes, electronic components are formed in the monocrystalline region, and dedicated regions are formed at the suspended structure, so that the electronic components are integrated in the same chip with static, kinematic or dynamic microstructures.

Abstract: A MOS technology power device comprises a semiconductor material layer of a first conductivity type, a conductive insulated gate layer covering the semiconductor material layer, and a plurality of elementary functional units. The conductive insulated gate layer includes a first insulating material layer placed above the semiconductor material layer, a conductive material layer placed above the first insulating material layer, and a second insulating material layer placed above the conductive material layer. Each elementary functional unit includes an elongated body region of a second conductivity type formed in the semiconductor material layer. Each elementary functional unit further includes an elongated window in the insulated gate layer extending above the elongated body region. Each elongated body region includes a source region doped with dopants of the first conductivity type, intercalated with a portion of the elongated body region wherein no dopant of the first conductivity type are provided.

Abstract: The electrical performance of a dielectric film for capacitive coupling in an integrated structure is enhanced by forming the polycrystalline electrically conductive layer coupled with the dielectric film substantially unigranular over the coupling area, commonly to be defined by patterning the stacked dielectric and conductive layers. The process forms a polycrystalline silicon film having exceptionally large grains of a size on the same order of magnitude as the dimensions of the patterned details. These exceptionally large grains are obtained by preventing the formation of “precursor nuclei” of subsequent grain formation and growth at the deposition interface with the dielectric that are apparently formed during the first instants of silicon CVD deposition and by successively growing the crystallites at a sufficiently low annealing temperature.

Abstract: The microtips of charge emitting material, which define the cathode of the flat FED screen and face the grid of the screen, are tubular and have portions with a small radius of curvature. The microtips are obtained by forming openings in the dielectric layer separating the cathode connection layer from the grid layer, depositing a conducting material layer to cover the walls of the openings, and anisotropically etching the layer of conducting material to form inwardly-inclined surfaces with emitting tips. Subsequently, the portions of the dielectric layer surrounding the microtips are removed.

Abstract: A non-volatile memory cell of the type which includes at least one floating gate transistor and which is realized over a semiconductor substrate includes a source region, and a drain region, separated by a channel region which is overlaid by a thin layer of gate oxide. The gate oxide isolates a floating gate region from the substrate. The floating gate region is coupled to a control gate terminal. The floating gate region of the memory cell develops a first potential barrier between the semiconductor substrate and the gate oxide layer, and a second different potential barrier between the floating gate region and the gate oxide.

Abstract: A cache system and method of operating are described in which a cache is connected between a processor and a main memory of a computer. The cache system includes a cache memory having a set of cache partitions. Each cache partition has a plurality of addressable storage locations for holding items fetched from said main memory for use by the processor. The cache system also includes a cache refill mechanism arranged to fetch an item from the main memory and to load said item into the cache memory at one of said addressable storage locations in a cache partion wich depends on the address of said item in the main memory. This is achieved by a cache partition access table holding in association with addresses of items to be cached respective multi-bit partition indications identifying one or more cache partition into which the item is to be loaded.

Abstract: A non-volatile memory device that comprises an internal bus for the transmission of data and other information of the memory to output pads; a timer; and an enabling/disabling circuit for enabling and disabling access to the internal bus; the timer controlling the internal bus to transmit information signals of the memory device that originate from local auxiliary lines over the internal bus when the bus is in an inactive period during a normal memory data reading cycle; the timer controlling the enabling/disabling means to allow/deny access to the internal bus on the part of the information signals or of the data from or to the memory.

Abstract: A memory cell for devices of the EEPROM type, formed in a portion of a semiconductor material substrate having a first conductivity type. The memory cell includes source and drain regions having a second conductivity type and extending at the sides of a gate oxide region which includes a thin tunnel oxide region. The memory cell also includes a region of electric continuity having the second conductivity type, being formed laterally and beneath the thin tunnel oxide region, and partly overlapping the drain region, and a channel region extending between the region of electric continuity and the source region. The memory cell further includes an implanted region having the first conductivity type and being formed laterally and beneath the gate oxide region and incorporating the channel region.

Abstract: Two different types of memory are integrated on the same type of integrated circuit. A microcontroller is associated with each of these memories. In order that the independence of operation of these microcontrollers may be ensured, they are each provided with time delay circuits whose role is to maintain the read or write operation of one microcontroller when another is selected.

Abstract: The present invention relates to an integrated circuit including a lateral well isolation bipolar transistor. A first portion of the upper internal periphery of the insulating well is hollowed and filled with polysilicon having the same conductivity type as the transistor base, to form a base contacting region. A second portion of the upper internal periphery of the insulating well is hollowed and filled with polysilicon having the same conductivity type as the transistor emitter, to form an emitter contacting region.

Abstract: The present invention relates to a method of functional testing of a logic circuit and to an integrated circuit for implementing the method. The method includes providing at least one test pattern and the storage of this test pattern in a first test register, this providing step being synchronized by an external clock signal; serially providing of this test pattern to an input of the internal logic circuit, this providing step being synchronized by a test clock signal generated from an internal clock signal; storing, in a second test register connected to the output of the internal logic circuit, at least one resulting pattern generated by the internal logic circuit when the test pattern is provided thereto, this storing being synchronized by the test clock signal; and providing to the outside, by series shifting, of the resulting pattern, this providing step being synchronized by the external clock signal.

Abstract: A single chip integrated circuit device includes a breakpoint range unit having first and second breakpoint registers for holding respectively lower and upper breakpoint addresses between which normal operation of the CPU is to be interrupted for diagnostic purposes. The breakpoint range unit further has comparison logic operative to compare the contents of the address register with each of a lower and upper breakpoint address, and to issue a breakpoint signal when the address held in an address register is equal to the lower breakpoint address or between the lower and upper breakup addresses. On chip control logic is connected to receive the breakpoint signal and arranged to interrupt normal operation of the CPU when the breakpoint signal is received. The comparison logic includes inverse state logic configured to set an inverse state indicator to cause generation of the breakpoint signal outside the address range defined by the upper and lower breakpoint address.

Abstract: The invention relates to a method of coding and storing fuzzy logic rules, and to a circuit architecture for processing such rules. The method provides for at least one inference rule of the IF/THEN type, having a predetermined number of antecedent parts of fuzzy variables and at least one consequent part, to be dismembered and stored into memory words to allow subsequent processing using logic operators of the AND/OR/NOT type. The coding of rules and variables is effected sequentially. Thus, the occupation of memory locations can be minimized. Specifically, the rules are coded through a multi-word description, such that the number of words coding each rule is a varying number dependent on the number of antecedent parts in the rule.

Abstract: The pressure sensor is integrated in an SOI (Silicon-on-Insulator) substrate using the insulating layer as a sacrificial layer, which is partly removed by chemical etching to form the diaphragm. To fabricate the sensor, after forming the piezoresistive elements and the electronic components integrated in the same chip, trenches are formed in the upper wafer of the substrate and extending from the surface to the layer of insulating material; the layer of insulating material is chemically etched through the trenches to form an opening beneath the diaphragm; and a dielectric layer is deposited to outwardly close the trenches and the opening. Thus, the process is greatly simplified, and numerous packaging problems eliminated.

Abstract: The present invention relates to an assembly ring, on a test head, of a wafer that provides an interface of electric contact transfer between the test head and a circuit to be tested, including a disk, open in its central portion and meant for supporting the periphery of the wafer; a removable collar assembly of the ring on the test head; and means for rotatably connecting the disk in the vicinity of a free end of the collar.

Abstract: A monolithic assembly includes vertical power semiconductor components formed throughout the thickness of a low doped semiconductive wafer of a first conductivity type, whose bottom surface is uniformly coated with a metallization. At least some of these components, so-called autonomous components, are formed in insulated sections of the substrate, whose lateral insulation is provided by a diffused wall of the second conductivity type and whose bottom is insulated through a dielectric layer interposed between the bottom surface of the substrate and the metallization.

Abstract: A computer system for executing branch instructions and a method of executing branch instructions are described. Two instruction fetchers respectively fetch a sequence of instructions from memory for execution and a sequence of instructions commencing from a target location identified by a set branch instruction in a sequence of instructions being executed. When an effect branch signal is generated, the target instructions are next executed, and the fetcher which was fetching the instructions for execution commences fetching of the target instructions.

Abstract: Static current consumption in a low-side output drive stage is eliminated by employing a switch in series with a current generator that is employed for controlling the discharge process of the driving node (gate) of the output power transistor and by controlling the switch with the voltage that is present on the driving node of the out put power transistor.

Abstract: A non-volatile memory cell of the type which includes at least one floating gate transistor and which is realized over a semiconductor substrate includes a source region, and a drain region, separated by a channel region which is overlaid by a thin layer of gate oxide. The gate oxide isolates a floating gate region from the substrate. The floating gate region is coupled to a control gate terminal. The floating gate region of the memory cell develops a first potential barrier between the semiconductor substrate and the gate oxide layer, and a second different potential barrier between the floating gate region and the gate oxide.

Abstract: The present invention relates to an active analog filter including a differential amplifier, an output of which provides a filtered signal and a non-inverting input of which is connected to a median potential between supply potentials of the amplifier, a first series association of a first fixed resistor and a first variable resistor between an input terminal of a signal to be filtered and an inverting input terminal of the amplifier, a second series association of a second fixed resistor and a second variable resistor between the output of the amplifier and its inverting input terminal, and a third variable resistor in series with a filtering capacitor, between a midpoint of one of the series associations and the median potential.