Abstract: A photo-alignment control method and a photo-alignment apparatus are disclosed. In the photo-alignment control method, a yaw angle of a motion stage (130) relative to a polarizing illumination device (110) is detected to derive a weighted dynamic polarization angle deviation of a substrate (200), so that a rotational angle of a rotary table (120) for rotating a substrate (200) is controlled, thereby effectively improving a control accuracy of a polarization angle in the photo-alignment process and further to ensure an accuracy of an alignment angle formed in an alignment film.

Abstract: An edge exposure apparatus and method are disclosed. The edge exposure apparatus includes: a base frame (1); an edge exposure unit (2) mounted on the base frame and configured to perform an edge exposure process on a wafer; a pre-alignment unit (3) for centering and orienting the wafer and cooperating with the edge exposure unit (2) in the edge exposure process; a cassette unit (4) for storing and detecting the wafer; a robotic arm (5) for transferring the wafer; and a master control unit (6) for controlling the above components of the edge exposure apparatus. The edge exposure unit (2) and the pre-alignment unit (3) share a common worktable, resulting in structural compactness. Alternatively, two pre-alignment units (3) and two edge exposure units (2) may be included in order to increase processing efficiency.

Abstract: A bonding device includes a flexible platen disposed between an upper platen assembly (9) and a transmission device and within a vacuum chamber (6). The flexible platen can expand to apply a downward pressure to the upper platen assembly (9) connected thereto. Under the effect of the pressure, the upper platen assembly (9) slowly moves downward until the upper platen assembly (9) itself and a lower platen assembly (7) respectively come into tight contact with objects to be bonded. After that, the flexible platen continues exerting the downward pressure on the upper platen assembly (9). In this way, the pressure applied by the upper platen assembly (9) to the objects to be bonded is uniform. Meanwhile, because of slow expansion of the flexible platen, the uniform pressure is applied slowly by the upper platen assembly (9).

Abstract: Disclosed is a silicon wafer processing device; a pre-aligned optical assembly and an edge exposure assembly are provided on a synchronous bi-directional motion module, reducing the occupied space of the device and saving the installation cost; and furthermore, a synchronous bi-directional motion module, a rotation unit and a position compensation unit on a bottom plate are controlled by means of a control assembly, so as to reduce the operational complexity; and moreover, the synchronous bi-directional motion module is controlled to drive the pre-aligned optical assembly and the edge exposure assembly to simultaneously move, so that the operations of pre-aligning and edge exposure can be performed on silicon wafers of different sizes, thereby saving the switching time and increasing the work efficiency. Further disclosed is a method for processing a silicon wafer using a silicon wafer processing device.

Abstract: A universal chip batch-bonding apparatus and method. The apparatus comprises a material pick-and-place area and a transfer work area. The material pick-and-place area comprises a blue tape pick-and-place area (110) for providing a chip (113) and a substrate pick-and-place area (120) for placing a substrate (123), the blue tape pick-and-place area (110) and the substrate pick-and-place area (120) being separately arranged at two ends of the transfer work area. The transfer work area sequentially comprises a chip pickup and separation area (210), a chip alignment and fine-tuning area (220), and a chip batch-bonding area (230) in a direction running from the blue tape pick-and-place area (110) to the substrate pick-and-place area (120).

Abstract: A batch bonding apparatus and bonding method. The bonding apparatus comprises: a chip supply unit (10) for providing a chip (60) to be bonded; a substrate supply unit (20) for providing a substrate; a transfer unit (40) for transferring the chip (60) between the chip supply unit (10) and the substrate supply unit (20); and a pickup unit (30) disposed above the chip supply unit (10), for picking up the chip (60) from the chip supply unit (10) and uploading the chip (60) to the transfer unit (40) after flipping a marked surface of the chip (60) in a required direction. In the present invention pickup of each chip is completed individually, but transfer processes and bonding processes can be carried out for multiple chips at the same time, greatly increasing yield.

Abstract: A device for moving a workpiece platform is provided, comprising a bottom frame (1) for supporting the workpiece platform, a pneumatic spring (2) disposed on a lower surface of the bottom frame (1), an air cushion unit (3) for generating flotation to support the workpiece platform when the workpiece platform is being moved, and a moving unit (200) disposed on the bottom frame (1). The moving unit (200) comprises: a roller unit (4), for driving the workpiece platform to move; a leaf spring (6), wherein one end of the leaf spring (6) is connected to a connecting block (5), and the other end thereof is connected to the roller unit (4); and a leaf spring deformation drive unit (8), connected to the leaf spring (6), to enable, by driving the leaf spring (6) to deform, the roller unit (4) to be in contact with the ground when the workpiece platform is being moved.

Abstract: A chip bonding device is disclosed, including a first motion stage (110), a second motion stage (200), a chip pickup element (160), a transfer carrier (170), a chip adjustment system (1000), a bonding stage (420) and a control system (500). A chip bonding method is also disclosed, in which a set of chips are temporarily retained on the transfer carrier (170) and their positions on the transfer carrier (170) are accurately adjusted by using the chip adjustment system (1000), followed by bonding the chips on the transfer carrier (170) simultaneously onto the substrate (430). With this batch bonding approach, flip-chips can be bonded with greatly enhanced efficiency. Moreover, picking up and bonding chips in batches can balance times for chip picking up, fine chip position tuning and chip bonding, thereby ensuring high bonding accuracy while increasing the throughput.

Abstract: A pattern structure of a photomask for a patterned sapphire substrate (PPS) and an exposure method are disclosed. The pattern structure is formed by stitching a plurality of identical polygons each including at least two sector-shaped opaque areas (7) and one transparent area (2). The polygons are joined together by stitching the sector-shaped opaque areas (7) into round opaque areas (1). Boundary areas of the photomask that are unable to accommodate a complete one of the polygons are configured as opaque areas (1). This pattern structure ensures that the round opaque areas (1) near the frames will not be affected by lighting conditions. During the exposure of another identical PSS photomask pattern, it only needs to superimpose it with the first photomask pattern at their frames to allow the part other than the frame to be exposed.

Abstract: A shutter blade assembly for a photolithography machine, a large-field of view (FoV) photolithography machine and an exposure method are disclosed. A scanning-directional shutter blade subassembly is moved once during each illuminance test and then moved above alignment marks after the test. During exposure, the scanning-directional shutter blade subassembly moves with a mask stage in the same direction and at the same speed so that it stays stationary relative to the alignment marks on a photomask (4). In case of full-FoV exposure, it is not necessary for a non-scanning-directional shutter blade subassembly to be moved, while in case of partial-FoV exposure, it is moved into the partial exposure FoV and defines there a window for obtaining a light spot with a desired shape by modulating illumination light.

Abstract: A method for rewiring of semiconductor devices is provided, in which deviations of electrical connection terminals (211, 212, 221, 222, 231, 232) on a carrier (100) are calculated and corrected by forming rewiring structures on the electrical connection terminals by mask-free photolithography. A wiring layer and/or solder balls (700) is/are then formed on the rewiring structures by processing the carrier (100) in a monolithic manner using mask-based photolithography. In this way, the combined use of mask-free photolithography and mask-based photolithography allows for higher efficiency and a shorter process cycle, compared to only using mask-free photolithography.

Abstract: A shutter device for use in exposure by a photolithography machine and a method of using the shutter device are disclosed. The device includes a shutter blade (1); a rotating motor (2) for driving the shutter blade (1) to rotate; a controller in electric connection with the rotating motor (2); and a supporter (3) for supporting the rotating motor (2). The shutter blade (1) includes a rotation center (11) and, disposed in correspondence with the rotation center (11), at least one open portion (12) and at least one shielding portion (13). The rotation center (11) is coupled to the rotating motor (2) which drives the shutter blade (1) to rotate so that the shutter device opening and closure are accomplished to enable and disable exposure. The shielding portion (13) includes a hollow portion (131) which significantly reduces the mass of the shutter blade (1), thereby facilitating the control over the rotation of the shutter blade (1).

Abstract: A reaction force diversion mechanism, a motor device and a photolithography machine are disclosed. The photolithography machine includes an illumination unit, a mask stage, a projection objective, a main baseplate, a wafer stage and a main carrier frame. The illumination unit and the mask stage are disposed above the main baseplate, and the main carrier frame is arranged above a ground base. Both of the wafer stage and the main baseplate are supported on the main carrier frame, and vibration dampers are deployed between the main carrier frame and the ground base. Reaction force diversion mechanisms are disposed between the wafer stage and the ground base and between the mask stage and the ground base. The reaction force diversion mechanisms can divert reaction forces generated from movement of the two motion stages onto the ground base while blocking vibration propagating from the ground base toward the motion stages.

Abstract: Provided are a chip bonding apparatus and bonding method.

Abstract: A measurement device and method for focusing and leveling are disclosed. The device includes a measuring optical path and a first monitoring optical path. Measuring light in the measuring optical path interacts with a wafer and is then incident on a measuring detector to form thereon a measuring mark. First monitoring light in the first monitoring optical path is incident on a measuring detector to form thereon a first monitoring mark. An error in a measurement result of the wafer that arises from a drift of the measuring detector can be eliminated by compensating for a vertical deviation of the wafer obtained by subtracting a drift of the first monitoring mark from a displacement of the measuring mark. In this way, measurement accuracy and stability can be improved by monitoring and correcting the drift of the measuring detector.

Abstract: A six-degree-of-freedom linear motor is disclosed, including a magnet array and a coil group disposed above the magnet array, the magnet array includes a first Halbach magnet array and a second Halbach magnet array, the first Halbach magnet array has a parallelogrammic cross section in a plane defined by X- and Y-axes, the first Halbach magnet array has a first side parallel to the Y-axis and a second side forming an angle of ? with the Y-axis, the second Halbach magnet array is in mirror symmetry with the first Halbach magnet array with respect to the Y-axis, and the coil group includes a first, second, third and fourth coil group, each having an axis inclined at an angle of ? with respect to the Y-axis, the first and second coil groups are in mirror symmetry with the third and fourth coil groups with respect to the Y-axis, respectively.

Abstract: A method for detecting degree of particulate contamination on a flat panel mainly includes the following steps: illuminating a to-be-detected flat panel (40) by using a light source module (10), to form an illumination field; adjusting a half width of the illumination field; adjusting a luminous intensity at a center of the illumination field and a luminous intensity at an edge of the half width of the illumination field; adjusting a light intensity and a position of the light source, as well as a position of a detector (20); and acquiring signals from foreign objects on the flat panel by using the detector (20). This method greatly alleviates particle mirror crosstalk and crosstalk of patterns on the lower surface of the flat panel, and improves the SNR, thus enhancing the accuracy in detection of foreign objects on the flat panel.

Abstract: A system and method for controlling an exposure dose of a light source are disclosed. The system includes an LED light source, a light homogenizer, an energy detection unit and an exposure dose control unit coupled to both the LED light source and the energy detection unit. The energy detection unit includes an energy detector corresponding to the LED light source or the light homogenizer and an energy spot sensor corresponding to a wafer. By using the LED light source capable of producing UV light in lieu of an existing mercury lamp, the system is less hazardous and safer by eliminating the risk of discharging hazardous mercury vapor into the environment when the mercury lamp is broken. Moreover, exposure illuminance of the LED light source can be adjusted and the LED light source can be turned on/off under the control of exposure dose control unit to expose the wafer with high dose control accuracy, without needing to use a variable attenuator or an exposure shutter.

Abstract: A projection exposure apparatus is disclosed, including a focal plane measuring system (8) and an alignment measuring system (9) both disposed between a reticle stage (3) and a substrate stage (4). The alignment measuring system (9) is capable of focusing. The focal plane measuring system (8) measures variation in the surface profile of a substrate (5), and the alignment measuring system (9) effectuates focusing based on data obtained from the measurement performed by the focal plane measuring system (8). After the completion of the focusing, coordinates of various points on the substrate (5) in the alignment measuring system (9) are those of the points that have experienced the profile variation of the substrate (5). A relative positional relationship between the reticle (2) and the substrate (5) that has undergone the profile variation can be computationally derived from the changes in the coordinates of the points, and compensation can be accomplished by moving the substrate stage (4).

Abstract: A dual-layer alignment apparatus is disclosed which includes: a fixed frame (40) and, disposed thereon, a first measuring device (50) and a mark plate (41), the mark plate (41) having a fixed-frame mark (20); and a motion stage (60) and, disposed thereon, a reference mark (30), a motion-stage mark (70) and a second measuring device (10). The first measuring device (50) is configured to measure a relative positional relationship between the reference mark (30) and the motion-stage mark (70), the second measuring device (10) is configured to measure a relative positional relationship between the reference mark (30) and the fixed-frame mark (20), from which a final relative positional relationship between the motion-stage mark (70) and the fixed-frame mark (20) is derived, based on which the motion stage (60) is displaced to a target location. A corresponding dual-layer alignment method is also disclosed. In the apparatus, the motion stage (60) is the only movable component.