Abstract: A signal processing apparatus 100 is achieved, capable of processing an analog pixel signal Ag obtained by photoelectric conversion in a CCD image sensor 1 such that noise will be reduced and S/N will be improved by interpolation in an area with low brightness or saturation on a display screen and resolution will be increased by edge emphasis in an area with high brightness or saturation on the display screen. The signal processing apparatus 100 for performing A/D conversion on the analog pixel signal Ag from the CCD image sensor 1, comprises an interpolation processing section 104 for adaptively switching interpolation processing for determining brightness or saturation of pixels for each pixel, and calculating a digital pixel signal of a target pixel from pixel signals of peripheral pixels positioned in the periphery of the target pixel based on the determined brightness or saturation of the target pixel.

Abstract: An air blowing device 1 includes: a main body housing 2 to open a suction inlet 4a and a jet outlet 5a of an air; and an air blower 3 to be provided in a lower portion in the main body housing 2 and to circulate the air that is sucked from the suction inlet 4a towards the jet outlet 5a. The main body housing 2 is in a column shape from below to above, and the jet outlet 5a is formed in a slit shape in a vertically long rectangular shape along a side wall of the main body housing 2 and also is arranged to expel an air in an approximately transverse direction.

Abstract: A laser device is disclosed that provides at least an ultraviolet laser beam and preferably both an ultraviolet laser beam and a visible laser beam. The laser device includes a semiconductor laser device (e.g. a laser diode) to generate visible laser light which is coupled into a frequency doubling crystal taking the form of a single crystal thin film frequency-doubling waveguide structure. The single crystal thin film frequency-doubling waveguide converts a portion of the visible light emitted by the laser diode into ultraviolet light. Both visible and ultraviolet laser light is emitted from the waveguide. As an example, the single crystal thin film frequency-doubling frequency doubling waveguide includes a frequency doubling crystal region composed of ?-BaB2O4 (?-BBO), a cladding region composed of materials that are transparent or nearly transparent at the wavelength of the ultraviolet laser light beam and a supporting substrate composed of any material.

Abstract: The present invention includes, in addition to transistors each (Mm,n) provided at the intersection of a gate bus line (GLn) with a data bus line (DLm): block potential applying transistors (DMn) connected to respective ends of gate bus lines (GLn) which ends are not connected to a gate driver (11); a potential supply line (VLL) connected to the gate bus lines (GLn) via the block potential applying transistors (DMn); and a blocking signal supplying section (131) for, immediately after the gate driver (11) supplies a first conduction signal for bringing the transistors (Mm,n) into conduction, supplying to the block potential applying transistors (DMn), a second conduction signal for bringing the block potential applying transistors (DMn) into conduction.

Abstract: Specifically provided is a light emitting device for image display, wherein each of light emitting elements, a PWM control unit which PWM-controls a current to be supplied to the light emitting element, a control condition setting unit which, according to the APL of image data, determines and updatably sets the PWM limiting condition for limiting the PWM value that is the duty ratio of the PWM control, and the reference current value that is the value of the current flowing to the light emitting element in response to turn-on of the PWM control, and a PWM value calculation unit which on the basis of the image data, the PWM limit condition, and the reference current value, calculates the PWM value of each area, and the PWM control unit performs the PWM control on the basis of the reference current value and the calculated PWM value.

Abstract: An antireflection film is provided in which a light scattering property is suppressed. The antireflection film includes, on a surface thereof, a moth-eye structure including a plurality of convex portions such that a width between vertices of adjacent convex portions is no greater than a wavelength of visible light.

Abstract: Provided is a semiconductor memory device including an oxide semiconductor insulated gate FET and having a capability to implement advanced performance without being affected by a variation in threshold voltage. A memory cell MC includes a memory node Nm formed at a connection point of a gate of a first transistor element T1, a source of a second transistor element T2, and one end of a capacitive element Cm, and a control node Nc formed at a connection point of a drain of the first transistor element T1 and a drain of the second transistor element T2.

Abstract: A surface light-emitting unit of the present invention is an LED module (30) for emitting light from an LED chip (6) of a light-emitting element part (1) via a light flux control section (22) of a light flux control part (2), the light flux control section (22) being fixed by a plurality of columnar sections (21) above a fixing surface of a substrate (4) on which fixing surface the light-emitting element part (1)is fixed. This provides an appropriate gap between the light-emitting element part (1) and the light flux control section (22) for heat release.

Abstract: Provided is a method for manufacturing a semiconductor device, in which a degradation of characteristics of a thin film transistor can be suppressed by performing plasma oxidation treatment on a gate insulating film containing nitrogen. An embodiment of the present invention is a method for manufacturing a semiconductor device comprising a thin film transistor including a gate electrode, a gate insulating film containing nitrogen, and a channel region in microcrystalline semiconductor films. The method includes the steps of performing plasma treatment on the gate insulating film in an oxidizing gas atmosphere containing hydrogen and an oxidizing gas containing an oxygen atom, and forming the microcrystalline semiconductor film over the gate insulating film. Formula (1), a/b?2, and Formula (2), b>0, are satisfied, where the amount of hydrogen and the amount of the oxidizing gas in the oxidizing gas atmosphere are a and b, respectively.

Abstract: The present invention is directed to novel substituted dihydropyrrolopyrazoles of structural Formula I which are inhibitors of the dipeptidyl peptidase-N enzyme and which are useful in the treatment or prevention of diseases in which the dipeptidyl peptidase-IV enzyme is involved, such as diabetes and particularly Type 2 diabetes. The invention is also directed to pharmaceutical compositions comprising these compounds and the use of these compounds and compositions in the prevention or treatment of such diseases in which the dipeptidyl peptidase IV enzyme is involved.

Abstract: A wireless transmission system is provided that can minimize the control command transmission amount by operating a plurality of sink devices in conjunction with each other with respect to each group. The wireless transmission system includes: a bridge device (1) which wireless-transmits an AV content; and a plurality of wireless sink devices (5, 6) which reproduce the wireless-transmitted AV content. The bridge device (1) has a group identification table which stores a group identifier for identifying a group formed by the wireless sink device (5, 6). The bridge device (1) adds a group identifier extracted from the group identification table to a control command for controlling the sink devices (5, 6) and wireless-transmits the control command having the group identifier. The wireless sink devices (5, 6) receive a control command wireless-transmitted from the bridge device (1) if a corresponding group identifier is added to the control command.

Abstract: A prediction set determining section selects a prediction set from a prediction set group including a plurality of prediction sets having different combinations of prediction modes corresponding to different prediction directions. Further, a prediction mode determining section selects a prediction mode from the prediction set thus selected. An entropy encoding section encodes the prediction set thus selected, the prediction mode thus selected, and residual data between an input image and a predicted image formed on the basis of the prediction set and the prediction mode. This allows an image encoding device to carry out predictions from more various angles, thereby improving prediction efficiency.

Abstract: To inhibit surface reflection of a display device. A display device which includes a reflective electrode layer 110; a partition 118 formed to surround the reflective electrode layer; a layer 120 containing a light-emitting organic compound and formed over the partition and the reflective electrode layer; a semi-transmissive electrode layer 122 formed over the layer containing the light-emitting organic compound; and a coloring layer 162 formed over the semi-transmissive electrode layer. The coloring layer overlaps with the reflective electrode layer and the partition. The partition does not overlap with the reflective electrode layer.

Abstract: A television receiver includes: an edge gradient direction setting section configured to set an edge gradient direction of an interpolation pixel by use of input pixels within a reference block; a temporary reference coordinate setting section (65) configured to set four reference pixels to be vertices of a parallelogram having two sides perpendicular to the edge gradient direction; a reference pixel value setting section (66) configured to set, by use of the input pixels within the reference block regardless of whether a first reference pixel and/or a second reference pixel of the four reference pixels is/are located inside or outside the reference block, reference pixel values which are pixel values of the respective four reference pixels; and an interpolation pixel value calculating section (67) configured to calculate a pixel value of the interpolation pixel by use of the reference pixel values of the respective four reference pixels.

Abstract: An active matrix substrate (5) is provided with mounting terminals (DT1), draw-out lines (22r) connecting the mounting terminals (DT1) and data bus lines (D), first common wires (24) connected in common to the plurality of data bus lines (D), and second thin-film transistors (second switching elements) (23a) connected between the draw-out lines (22r) and the first common wires (24). In the mounting terminals (DT1), upper-layer terminal electrodes (34) and lower-layer terminal electrodes (36a, 36b) are connected via terminal contact holes (H2a). The upper-layer terminal electrodes (34) are provided so as to cover at least portions of second thin-film transistors (26a).

Abstract: A mobile station device is provided that is capable of suppressing an increase in a resource that is occupied by a PUCCH while maintaining backward compatibility in LTE. A reference signal that is spread using a spread code that has an orthogonal relationship with a spread code is arranged in a domain in which a data signal that is spread by the spread code is arranged in the PUCCH in the LTE in the related art.

Abstract: Provided is a display device including a light-diffusing member that includes a substrate, a plurality of light-shielding layers, and a light-diffusing section, and a polarizing plate.

Abstract: The present invention includes: an image size detection section detecting an image size according to image data including a photograph; a paper size detection section detecting a paper size for printing the image; and an enlarging/reducing unit carrying out an enlarging/reducing process to the image data, the enlarging/reducing unit comparing the image size with the paper size and carrying out the enlarging/reducing process by selecting, between a first enlarging/reducing ratio which is a first ratio of a short side length of the paper to a short side length of the image and a second enlarging/reducing ratio which is a second ratio of a long side length of the paper to a long side length of the image, one of the first enlarging/reducing ratio and the second enlarging/reducing ratio which one is to be reduced by a ratio greater than a ratio by which the other one is to be reduced.

Abstract: A housing for storing therein a circuit board, includes: a through hole; an electrically conductive pattern passing through inner walls of the through hole so as to be stretched from the outside surface of the housing to the inside surface of the housing, and being electrically connected to the circuit board; and a plug member with which the through hole is filled, the through hole having openings on the outside and the inside, respectively, of the housing, and the opening on the outside of the housing being larger than the opening on the inside of the housing.

Abstract: The present invention suppresses electrochemical corrosion in a TFT between an oxide conductor and a source/drain wiring line containing aluminum. In this semiconductor device, a gate layer containing a gate line and a gate electrode is formed on a substrate, and a semiconductor layer made of an oxide semiconductor is formed so as to overlap the gate electrode of the gate layer, with a gate insulating film therebetween. A source electrode and a drain electrode are formed by spacing apart a source wiring layer on the semiconductor layer. The source wiring layer is configured by laminating first conductive layers made of Al and a second conductive layer constituted by a metal film made of a metal other than an amphoteric metal. The drain electrode and a pixel electrode are electrically connected to each other via a contact hole in protective layers formed on the source wiring layer.