Abstract: A memory management method is provided. The method includes in response to completion of a garbage collection operation, identifying one or more recycled block stripes subjected to the garbage collection operation among a plurality of block stripes of a rewritable non-volatile memory module; updating a garbage collection information table in a buffer memory according to the one or more recycled block stripes; and writing the garbage collection information table into the rewritable non-volatile memory module.

Abstract: A data writing method is provided. The method includes receiving a first write command and first data corresponding to the first write command from a host system, wherein the first write command instructs to store the first data into a first logical address; copying the first data into a register, responding to the host system that the first write command is completed, and starting to execute a first program operation to program the first data into a first physical page; and in response to determining that the first program operation is failed, reading the first data from the register according to a logical to physical addresses mapping table and mandatorily programming the first data into a second physical page.

Abstract: A memory management method is provided. The method includes selecting a target physical programming unit; using a first read voltage corresponding to a first type physical page of the target physical programming unit to read a plurality of target memory cells of the target physical programming unit, so as to calculate a first bit value ratio; if the first bit value ratio is not smaller than a first preset threshold, using a second read voltage corresponding to the first type physical page of the target physical programming unit to read the plurality of target memory cells of the target physical programming unit, so as to calculate a second bit value ratio; and determining whether the first type physical page of the target physical programming unit is empty by comparing the first bit value ratio and the second bit value ratio.

Abstract: A memory management method and a storage controller using the same are provided. The method includes reading a target word-line to identify a plurality of raw Gray code indexes corresponding to a plurality of memory cells of the target word-line; performing a decoding operation on raw data of the target word-line to identify a plurality of decoded Gray code indexes corresponding to the memory cells; calculating a plurality of Gray code absolute bias values corresponding to the memory cells according to the raw Gray code indexes and the decoded Gray code indexes; and identifying one or more abnormal memory cells among the memory cells according to the Gray code absolute bias values; and recording the one or more abnormal memory cells into an abnormal memory cell table, wherein a Gray code absolute bias value of each of the one or more abnormal memory cells is greater than a bias threshold.

Abstract: A memory management method is provided. The method includes performing a read retry operation to a target block stripe, and identifying a read retry recording table of the target block stripe; selecting a target read retry index value from one or more first read retry index values according to the one or more first read retry index values in the read retry recording table; using a target read retry option corresponding to the read retry index value to perform a read operation to the target block stripe; in response to determining that the read operation is successful, determining that the read retry operation is completed, and updating the read retry recording table according to the target read retry index value; and determining whether to perform a wear leveling operation to the target block stripe according to the latest read retry recording table.

Abstract: A command processing method and a storage controller are provided. The command processing method is adapted for the storage controller. The storage controller includes a processor and peripherals. The command processing method includes: disposing a first command buffer and a second command buffer in the processor; disposing a synchronizer in the storage controller, the synchronizer changing a value of a flag at a predetermined interval to set the first command buffer or the second command buffer valid; and when the first command buffer is valid and the processor issues a command, the processor temporarily stores the command in the first command buffer and one of the peripherals accesses the command in the first command buffer to executes a corresponding operation.

Abstract: A data backup method, a data recovery method and a storage controller for a rewritable non-volatile memory module are provided. The data backup method includes receiving a trim command; generating a trim information list according to the trim command and a physical address that stores the trim information list, wherein the trim information list records information corresponding to the trim command and the physical address; storing the generated trim information list into the physical address. The data recovery method includes re-establishing a logical-to-physical table; loading a latest trim information list into a memory from the rewritable non-volatile memory module; updating the re-established logical-to-physical table or the trim information list in the memory according to the trim information.

Abstract: A memory management method and a storage controller using the same are provided. The memory management method includes: establishing an array; selecting a first block from spare blocks at an initial time point and storing a first index number of the first block to a look-ahead block; adding the first index number in the look-ahead block to the array at a first time point, selecting a second block from the spare blocks and replacing the first index number stored to the look-ahead block with a second index number of the second block, and programming the first block; and adding the second index number in the look-ahead block to the array at a second time point, selecting a third block from the spare blocks and replacing the second index number in the look-ahead block with a third index number of the third block, and programming the second block.

Abstract: A logical-to-physical table updating method and a storage controller are provided. The storage controller includes a processor and a flash memory access circuit. The flash access circuit is coupled to a flash memory. The logical-to-physical table updating method includes: transmitting a write command to the flash memory access circuit by the processor; executing the write command to access the flash memory by the flash memory access circuit; and after the write command is executed by the flash memory access circuit, updating a logical-to-physical table in a random access memory by the flash memory access circuit.

Abstract: A decoding method is provided. The method includes selecting a target word line among a plurality of word lines; respectively reading a plurality of target memory cells of the target word-line by using different X read voltage sets to obtain corresponding X Gray code summation sets; calculating a Gray code count summation difference of the Gray code count summations at the same sequence position respectively in N?1 Gray code count summations between every pair of adjacent Gray code summation sets of the X Gray code summation sets, so as to obtain X?1 Gray code count summation difference sets corresponding to all pairs of the Gray code summation sets; and deciding N?1 optimized read voltages from X*(N?1) read voltages belonging to the X read voltage sets according to the X?1 Gray code count summation difference sets.

Abstract: A Memory management method for a storage device having a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of physical blocks divided into a plurality of block stripes. The method includes: scanning the physical blocks to identify one or more bad physical blocks among the physical blocks; calculating a plurality of effective weight values corresponding to the block stripes according to a plurality of data accessing time parameters of the rewritable non-volatile memory module, a plurality of valid data counts, and the identified one or more bad physical blocks; and selecting a target block stripe from the block stripes according to the effective weight values to perform a garbage collection operation.

Abstract: A memory management method is provided. The method includes selecting a target physical programming unit among a plurality of physical programming units of a rewritable non-volatile memory module; identifying a target storage status and a target read voltage according to a memory type of the rewritable non-volatile memory module; using the target read voltage to read the target physical programming unit to obtain a bit value ratio; and identifying a storage pattern of the target physical programming unit according to the bit value ratio.

Abstract: A memory management method for a storage device having a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of physical blocks. The method includes: scanning the plurality of physical blocks to identify one or more bad physical blocks; performing a bad physical block remapping operation on the one or more bad physical blocks to update a virtual block stripe management table; and performing a writing operation under a multiple plane write mode based on the virtual block stripe management table.

Abstract: A decoding method and a storage controller for a rewritable non-volatile memory module are provided. The method includes choosing a target word line among a plurality of word lines, wherein a plurality of target memory cells of the target word-line are programmed; reading the target memory cells by respectively using different X read voltage sets, so as to obtain X Gray code count deviation summations, wherein the X read voltage sets and the corresponding X Gray code count deviation summations are all ordered based on a first predefined order; and choosing one of the X read voltage sets as an optimized read voltage set according to the X Gray code count deviation summations.

Abstract: A decoding method is provided, and the method includes performing a decoding operation on a plurality of data bit value sets of a codeword. The decoding operation includes following steps: (1) obtaining a syndrome of the data bit value sets; (2) determining whether the codeword is correct or incorrect according to the latest obtained syndrome, wherein if the codeword is correct, the decoding operation is ended, wherein if the codeword is wrong, continuing to step (3) to start an iterative operation; (3) obtaining a plurality of error value sets respectively corresponding to the data bit value sets, wherein in response to obtaining a first error value set, steps (4) and (5) are performed simultaneously; (4) performing an extreme value search operation; (5) performing a bit-flipping operation; and (6) performing a syndrome calculation operation after the step (5) is completed, and performing step (2).

Abstract: A decoding method and a storage controller for a rewritable non-volatile memory module are provided. The method includes choosing a target word line among a plurality of word lines, wherein a plurality of target memory cells of the target word-line are programmed; reading the target memory cells by respectively using different X read voltage sets, so as to obtain X Gray code count deviation summations, wherein the X read voltage sets and the corresponding X Gray code count deviation summations are all ordered based on a first predefined order; and choosing one of the X read voltage sets as an optimized read voltage set according to the X Gray code count deviation summations.

Abstract: A decoding method and a storage controller for a rewritable non-volatile memory module are provided. The method includes: choosing a target word line among a plurality of word lines, wherein preset data is programmed into a plurality of target memory cells of the target word-line; identifying a plurality of preset bit values according to the preset data; respectively using different X read voltage sets to read the target memory cells to obtain X read bit value sets respectively corresponding to the X read voltage sets, and obtain X deviation amount summation sets by comparing the X read bit value sets and the preset bit values; and determining N?1 optimized read voltages of an optimized read voltage set according to the X deviation amount summation sets.

Abstract: A memory management method for a storage device having a rewritable non-volatile memory module is provided, wherein the rewritable non-volatile memory module has a plurality of physical units, and each of the physical units has a plurality of word-lines. The method includes: performing a first checking operation on a target physical unit among the physical units according to an occurrence of a specific event; and determining whether a first operation needs to be performed on valid data in the target physical unit according to a checking result of the first checking operation that corresponds to the target physical unit.

Abstract: A data backup method and a data recovery method are provided. The data backup method includes: updating a main information table and a sub information table and generating physical unit information according to an erase count and a physical unit status of a physical unit; writing the physical unit information into the physical unit before writing data into the empty physical unit; writing the main information table and the sub information table into a rewritable non-volatile memory module according to corresponding conditions. The data recovery method includes: writing a latest main information table stored in a rewritable non-volatile memory module into a memory; updating the main information table in the memory according to a sub information table which is newer than the main information table; and updating the main information table in the memory according to physical unit information which is newer than the sub information table.

Abstract: A decoding method and a storage controller for a rewritable non-volatile memory module are provided. The method includes: choosing a target word line among a plurality of word lines, wherein preset data is programmed into a plurality of target memory cells of the target word-line; identifying a plurality of preset bit values according to the preset data; respectively using different X read voltage sets to read the target memory cells to obtain X read bit value sets respectively corresponding to the X read voltage sets, and obtain X deviation amount summation sets by comparing the X read bit value sets and the preset bit values; and determining N?1 optimized read voltages of an optimized read voltage set according to the X deviation amount summation sets.