Patents Assigned to Shin-Etsu Chemicals Co., Ltd.
  • Conductive Material Composition, Conductive Film, And Method For Forming Conductive Film
    Publication number: 20240247156
    Abstract: The present invention is a conductive material composition containing: (A) metal nanowires; (B) a resin whose main chain is to be decomposed by an acid, heat, or both; and (C) a solvent. This can provide a conductive material composition for forming a conductive film having high-conductivity and high-transparency.
    Type: Application
    Filed: January 4, 2024
    Publication date: July 25, 2024
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Jun HATAKEYAMA, Shiori NONAKA, Daisuke KORI
  • LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE, AND METHOD OF FORMING CRYSTALLINE OXIDE FILM
    Publication number: 20240250185
    Abstract: A laminated structure having at least a base substrate and a crystalline oxide film containing gallium oxide as a main component, wherein an average value of reflectance of light having a wavelength of 400 to 800 nm is 16% or greater on a surface on a side of the crystalline oxide film of the laminated structure. Thus, the invention provides a laminated structure having a crystalline oxide film containing gallium oxide as a main component with extremely few crystal defects, excellent crystallinity, and excellent semiconductor properties when applied to a semiconductor device.
    Type: Application
    Filed: August 30, 2022
    Publication date: July 25, 2024
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takenori WATABE, Hiroshi HASHIGAMI, Takahiro SAKATSUME
  • Q-SWITCH STRUCTURE AND METHOD OF PRODUCING Q-SWITCH STRUCTURE
    Publication number: 20240250494
    Abstract: A Q-switch structure including, a solid-state laser medium, and a magneto-optical material, wherein the solid-state laser medium and the magneto-optical material are joined and integrated. In addition, the solid-state laser medium has a thickness of 1 mm or more, and the solid-state medium and the magneto-optical material are directly joined. Consequently, the Q-switch is applicable to high optical output and contributes to the miniaturization of a laser apparatus.
    Type: Application
    Filed: May 26, 2022
    Publication date: July 25, 2024
    Applicants: SHIN-ETSU CHEMICAL CO., LTD., NATIONAL UNIVERSITY CORPORATION TOYOHASHI UNIVERSITY OF TECHNOLOGY
    Inventors: Toshiaki WATANABE, Taichi GOTO, Mitsuteru INOUE
  • Substrate with Film for Reflective Mask Blank, and Reflective Mask Blank
    Publication number: 20240248388
    Abstract: A substrate with a film for a reflective mask blank and a reflective mask blank, including a substrate, a multilayer reflection film of Mo layers and Si layers, and a Ru protection film is provided. The substrate and blank include a mixing layer containing Mo and Si existing between the Mo layer and Si layer, another mixing layer containing Ru and Si generating between the uppermost Si layer and the Ru protection film, the film and layers have thicknesses satisfying defined expressions.
    Type: Application
    Filed: November 9, 2023
    Publication date: July 25, 2024
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tsuneo TERASAWA, Hideo KANEKO, Yukio INAZUKI, Takuro KOSAKA
  • WINDOW MATERIAL FOR OPTICAL ELEMENT, LID FOR OPTICAL ELEMENT PACKAGE, AND OPTICAL ELEMENT PACKAGE
    Publication number: 20240250223
    Abstract: A window material for an optical element, including: a synthetic quartz glass substrate having a flat plate shape and having main surfaces through which light is transmitted, at least one of the main surfaces being a rough surface; and an antireflection film formed on the at least one main surface of the synthetic quartz glass substrate, the main surface being the rough surface. The window material for an optical element of the present invention is easy in shape processing, undergoes little temporal change in a wide wavelength region and is stable over a long period of time, and has high total light transmittance of distributed light.
    Type: Application
    Filed: January 9, 2024
    Publication date: July 25, 2024
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Harunobu MATSUI, Daijitsu HARADA, Masaki TAKEUCHI
  • LAMINATED STRUCTURE, SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING LAMINATED STRUCTURE
    Publication number: 20240250115
    Abstract: A laminated structure including, a ground substrate with a crystalline oxide film containing gallium oxide as a main component and a root-mean-square of a roughness on a surface of the crystalline oxide film is 0.2 ?m or less. A diameter of the ground substrate is 50 mm or more and TTV of the ground substrate is 30 ?m or less.
    Type: Application
    Filed: March 30, 2022
    Publication date: July 25, 2024
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takenori WATABE, Hiroshi HASHIGAMI, Takahiro SAKATSUME
  • THIOEPOXY GROUP- AND (METH)ALLYL GROUP-CONTAINING COMPOUND, AND METHOD FOR PRODUCING SAME
    Publication number: 20240246926
    Abstract: Provided is a thioepoxy group- and (meth)allyl group-containing compound represented by formula (1). (In the formula, R1 is a C2-20 trivalent or tetravalent hydrocarbon group. R2 is a hydrogen atom or a methyl group. n is 3 or 4.
    Type: Application
    Filed: March 31, 2022
    Publication date: July 25, 2024
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventor: Hideyoshi Yanagisawa
  • SCANNING REDUCED PROJECTION OPTICAL SYSTEM AND LASER PROCESSING APPARATUS USING THE SAME
    Publication number: 20240246172
    Abstract: In the present invention, micro devices on a donor substrate are subjected to LIFT onto an opposed receptor substrate with high position accuracy by a scanning reduced projection optical system that forms an image of traverse multimode pulsed laser light with a minute area size onto the donor substrate through a lens array-type zoom homogenizer, an array mask 10, a scanning mirror 4, a photomask 6, and a telecentric projection lens 8. An implementation method thereof includes steps of inspection for acquiring position information, LIFT area division, irradiation position selection, transfer, and stage moving.
    Type: Application
    Filed: July 20, 2021
    Publication date: July 25, 2024
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Hiroshi Yamaoka, Satoki Nakada, Taketo Usami
  • Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process
    Publication number: 20240248404
    Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is a metal compound including at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, and the ligand includes a crosslinking group represented by one of the following general formulae (W-1). This provides: a compound for forming a metal-containing film having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used.
    Type: Application
    Filed: January 2, 2024
    Publication date: July 25, 2024
    Applicant: SHIN ETSU CHEMICAL CO., LTD.
    Inventors: Naoki KOBAYASHI, Nobuhiro NAGAMACHI, Daisuke KORI
  • Solar cell with high photoelectric conversion efficiency and method for manufacturing solar cell with high photoelectric conversion efficiency
    Patent number: 12046687
    Abstract: A method for manufacturing a solar cell, including the steps of: forming unevenness on both of main surfaces of a semiconductor substrate of a first conductivity type; forming a base layer on a first main surface of the semiconductor substrate; forming a diffusion mask on the base layer; removing the diffusion mask in a pattern; forming an emitter layer on the portion of the first main surface where the diffusion mask have been removed; removing the remaining diffusion mask; forming a dielectric film on the first main surface; forming a base electrode on the base layer; and forming an emitter electrode on the emitter layer. This provides a method for manufacturing a solar cell that can bring high photoelectric conversion efficiency while decreasing the number of steps.
    Type: Grant
    Filed: October 25, 2016
    Date of Patent: July 23, 2024
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Takenori Watabe, Ryo Mitta, Hiroshi Hashigami, Hiroyuki Ohtsuka
  • Manufacturing apparatus and manufacturing method of porous glass base material for optical fiber
    Patent number: 12043564
    Abstract: A manufacturing method of a porous glass base material for optical fiber includes: controlling a flow rate of a raw material liquid of an organic siloxane by a liquid mass flow controller; introducing raw material liquid to a raw material liquid nozzle of a vaporizer by a raw material liquid pipe; ejecting raw material liquid into the vaporizer; mixing raw material liquid and carrier gas to vaporize raw material liquid to form mixed gas; supplying mixed gas to a burner; combusting mixed gas together with a combustible gas and a combustion supporting gas in the burner to produce SiO2 particles; depositing SiO2 particles on a starting core base material to form the porous glass base material; and closing an open/close valve on a flow path of the raw material liquid pipe to stop supply of raw material liquid, while continuing to supply carrier gas, combustible gas, and combustion supporting gas.
    Type: Grant
    Filed: July 25, 2022
    Date of Patent: July 23, 2024
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Naoto Noda, Hitoshi Iinuma
  • Sprayed coating, method for manufacturing sprayed coating, sprayed member and spraying material
    Patent number: 12043903
    Abstract: A sprayed coating having a multilayer structure including a lower layer made a sprayed coating containing a rare earth oxide, and a surface layer made of another sprayed coating containing a rare earth fluoride and/or a rare earth oxyfluoride, the multilayered sprayed coating having a volume resistivity at 23° C. and a volume resistivity at 200° C., the volume resistivity at 23° C. being 1×109 to 1×1012 ?·cm, and a temperature index of the volume resistivities defined by the ratio of the volume resistivity at 200° C. to the volume resistivity at 23° C. being 0.1 to 10.
    Type: Grant
    Filed: March 4, 2021
    Date of Patent: July 23, 2024
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Ryo Iwasaki, Noriaki Hamaya, Yasushi Takai, Hajime Nakano
  • PELLICLE FRAME AND PELLICLE
    Publication number: 20240241435
    Abstract: The present invention is to provide a pellicle frame in a frame shape, having an upper end face to arrange a pellicle film thereon and a lower end face to face a photomask, and which is characterized by being provided with a notched part from an outer side face toward an inner side face of the upper end face, and to provide a pellicle characterized by including the pellicle frame as a component.
    Type: Application
    Filed: March 28, 2024
    Publication date: July 18, 2024
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventor: Yu YANASE
  • SEMICONDUCTOR ELEMENT ENCAPSULATION RESIN COMPOSITION AND SEMICONDUCTOR DEVICE HAVING CURED PRODUCT THEREOF
    Publication number: 20240239988
    Abstract: Provided is an encapsulation resin composition that is suitable for encapsulating a semiconductor element-mounted surface of a substrate with a semiconductor element(s) mounted thereon or a semiconductor element-forming surface of a wafer with a semiconductor element(s) formed thereon, is superior in low warpage property, and has a high relative permittivity and a low dielectric tangent. The encapsulation resin composition of the present invention contains: (A) a maleimide compound having at least one dimer acid frame-derived hydrocarbon group per molecule; (B) a reaction initiator; (C) a high-relative permittivity inorganic filler having a relative permittivity of not lower than 10 at 1 MHz, the inorganic filler (C) being an inorganic filler other than the following component (D); and (D) silica particles and/or alumina particles.
    Type: Application
    Filed: January 10, 2024
    Publication date: July 18, 2024
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventor: Hiroki HORIGOME
  • Polymer For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process
    Publication number: 20240242967
    Abstract: The present invention is a polymer for forming a metal-containing film including a repeating unit represented by the following general formula (1A), where W1 represents a divalent organic group having 1 to 31 carbon atoms; and each Q represents a group selected from the group consisting of an alkyl group having 1 to 20 carbon atoms, a cycloalkyl group having 3 to 20 carbon atoms, an aliphatic unsaturated organic group having 2 to 20 carbon atoms and having one or more double bonds or triple bonds, an aryl group having 6 to 30 carbon atoms, and an aralkyl group having 7 to 31 carbon atoms. This provides: a polymer for forming a metal-containing film having excellent dry etching resistance and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the polymer; and a patterning process in which the composition is used.
    Type: Application
    Filed: December 18, 2023
    Publication date: July 18, 2024
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Naoki KOBAYASHI, Shohei IWAMORI, Daisuke KORI
  • Compound For Forming Metal-Containing Film, Composition For Forming Metal-Containing Film, And Patterning Process
    Publication number: 20240241445
    Abstract: The present invention is a compound for forming a metal-containing film to be contained in a composition for forming a metal-containing film, where the compound is a metal compound including at least one kind of metal atom selected from the group consisting of Ti, Zr, and Hf and a ligand coordinated to the metal atom, and the ligand includes an organic group RA represented by one of the following general formulae (1). This provides: a metal compound having better dry etching resistance than conventional resist underlayer film materials and also having high filling and planarizing properties; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist material.
    Type: Application
    Filed: December 19, 2023
    Publication date: July 18, 2024
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Naoki KOBAYASHI, Nobuhiro Nagamachi, Daisuke Kori
  • Positive Resist Material And Patterning Process
    Publication number: 20240241442
    Abstract: The present invention is a positive resist material containing a compound having two or more urethane groups and having a carboxyl group and a sulfonium salt or iodonium salt of a carboxylic acid, the carboxyl group being substituted with an acid-labile group and being bonded to a first urethane group via a first linking group, and the sulfonium salt or iodonium salt being bonded to a second urethane group directly or via a second linking group. This provides a positive resist material that has higher sensitivity than conventional positive resist materials, achieves excellent resolution, and small edge roughness and CDU, and allows excellent pattern profile after exposure to light.
    Type: Application
    Filed: December 18, 2023
    Publication date: July 18, 2024
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Jun HATAKEYAMA
  • OILY COSMETIC
    Publication number: 20240238188
    Abstract: Developed is an oily cosmetic imparting an adhesiveness, softness, smoothness, luster, and emollient effect, bringing about a natural makeup finish, and ensuring an excellent makeup durability without showing color transfer and color fade, while having a light spreadability, non-sticky feeling of use, and superior water repellency. The oily cosmetic contains components (A) and (B) which are: (A) an organopolysiloxane compound that has a weight-average molecular weight of 500 to 200,000; and (B) a hydrocarbon-based oily solidifying agent and/or a non-hydrocarbon-based oily gelling agent.
    Type: Application
    Filed: April 14, 2022
    Publication date: July 18, 2024
    Applicant: Shin-Etsu Chemical Co., Ltd.
    Inventors: Hiroyuki MORIYA, Mituru TANAKA
  • INFRARED-TRANSMISSIVE CURABLE COMPOSITION, CURED PRODUCT THEREFROM, AND OPTICAL SEMICONDUCTOR DEVICE
    Publication number: 20240240021
    Abstract: A composition comprising components (A) to (E) below, due to an excellent compatibility with dyes, can inhibit timewise dye aggregation, and has a high infrared transmissivity and a high visible light-blocking performance. (A) An addition reaction product between a compound (a) with formula (1) and a polycyclic hydrocarbon (b) having two carbon-carbon double bonds in each molecule, the addition reaction product having two carbon-carbon double bonds in each molecule (R1 represents, e.g.
    Type: Application
    Filed: September 24, 2020
    Publication date: July 18, 2024
    Applicant: SHIN-ETSU CHEMICAL CO., LTD.
    Inventor: Eri ASAKURA
  • Cosmetic product
    Patent number: 12036306
    Abstract: This cosmetic product has extensibility and imparts use feels such as silkiness and smoothness, and further demonstrates excellent soft focus effects, and contains: (A) spherical organopolysiloxane particles of which 90% by mole or more are constituted from organosilsesquioxane units and which have a volume average particle size of 0.1 to 30 ?m and an average refractive index of 1.44 to 1.57, and; (B) an oil agent; and one or more selected from (C) a silicone crosslinked product and (D) a silicon resin coating silicon rubber powder.
    Type: Grant
    Filed: October 29, 2019
    Date of Patent: July 16, 2024
    Assignee: SHIN-ETSU CHEMICAL CO., LTD.
    Inventors: Yoshinori Inokuchi, Masayuki Konishi