Abstract: Provided is a resin composition capable of being turned into a cured product having an excellent dielectric property as indicated by a low dielectric tangent at a high frequency, and also having an excellent heat resistance as indicated by a high Tg. The resin composition is a heat-curable imide resin composition containing: (A) a modified imide compound represented by the following formula (1) wherein A independently represents a tetravalent organic group having 4 to 200 carbon atoms; B independently represents a divalent organic group having 2 to 200 carbon atoms; n is 0 to 100; each of m and l is independently 0 to 18; X independently represents a carbon-carbon unsaturated bond-containing organic group; and (B) a reaction promotor.

Abstract: A chemically amplified resist composition is provided comprising (A) a polymer adapted to increase its solubility in an aqueous alkaline under the action of an acid, the polymer comprising repeat units, represented by the formula (A1), and repeat units, represented by the formula (B1), and lacking repeat units adapted to generate an acid upon exposure, and (B) a photoacid generator represented by the formula (PAG-a) or (PAG-b) which generates an acid under the action of KrF excimer laser, ArF excimer laser, electron beams or extreme ultraviolet radiation.

Abstract: A resist composition comprising an acid generator containing a sulfonium salt containing a sulfonic acid anion having a carbon atom to which an iodine atom is bonded and a sulfonium cation having formula (1).

Abstract: The present disclosure provides a pellicle frame laminate with a first adhesive agent layer on an upper end face of a pellicle frame having the upper end face and a lower end face, the first adhesive agent layer being covered with a first protective sheet; and a second adhesive agent layer on the lower end face, the second adhesive agent layer being covered with a second protective sheet.

Abstract: A chemically amplified resist composition comprising a quencher in the form of an amine compound of specific structure is provided. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: The present invention is an onium salt represented by the following general formula (1), where n1 represents an integer of 0 or 1; n2 represents an integer of 0 to 3; R1a represents a hydrocarbyl group having 1 to 20 carbon atoms and optionally containing a heteroatom; n3 represents an integer of 0 to 3; R1b represents a hydrocarbyl group having 1 to 36 carbon atoms and optionally containing a heteroatom; XA represents a carbonyl group that forms an amide bond together with an adjacent —NH or represents a sulfonyl group that forms a sulfonamide bond together with the adjacent —NH; n4 represents an integer of 1 or 2; and Z+ represents an onium cation. This provides: a resist composition in lithography that has high sensitivity and excellent resolution, can improve LWR and CDU, and can also suppress collapse of a resist pattern; and a novel onium salt to be used in the resist composition.

Abstract: Provided is a bismaleimide compound where the compound itself has a superior solubility in various solvents; a resin composition containing this compound has a superior flexibility; and a cured product of such composition has a low relative permittivity and dielectric tangent, a low thermal expansion coefficient, and a superior heat resistance due to a high glass-transition temperature. The bismaleimide compound is represented by the following formula (1): wherein A independently represents a cyclic structure-containing tetravalent organic group; B independently represents a dimer acid frame-derived divalent hydrocarbon group; Q independently represents an aromatic ring-containing divalent group that has a fluorene frame or indene frame; W is B or Q; n is 1 to 100; m is 1 to 100; no restrictions are imposed on an order of each repeating unit identified by n and m, and a bonding pattern thereof may be alternate, block or random.

Abstract: The purpose of the present invention is to provide a pellicle frame with an adhesive layer with which it is possible to prevent deterioration in the flatness of the adhesive layer more effectively than before, further to moderate the stress applied by a pellicle to a photomask, and as a result to reduce pellicle induced distortion (PID). The present invention provides a pellicle frame with an adhesive layer having one end surface on which a pellicle film is provided and another end surface provided with an adhesive layer for adhesion to a photomask, wherein the adhesive layer has a thickness of 0.10 to 0.30 mm, and the adhesive layer has an adhesive force of 5×10?3 to 5×10?1 N/cm. The present invention also provides a pellicle provided with a pellicle film on the one end surface.

Abstract: A curable perfluoropolyether adhesive composition including: (A) a linear perfluoropolyether compound having at least two alkenyl groups per molecule and having a perfluoropolyether structure containing a repeating unit represented by —CaF2aO— in a main chain, wherein “a” represents an integer of 1 to 6: 100 parts by mass; (B) a fluorine-containing organohydrogenpolysiloxane having at least two silicon atom-bonded hydrogen atoms per molecule: an effective curing amount; and (C) a hydrosilylation-reaction catalyst: a catalytic amount. The curable perfluoropolyether adhesive composition does not contain any organic solvent in the composition. This provides a curable perfluoropolyether adhesive composition that produces a cured product with excellent heat resistance, weather resistance, water repellency, oil repellency, chemical resistance, solvent resistance, etc.

Abstract: Provided are a titanium oxide particle-metal particle composition having a higher photocatalytic activity, especially a higher visible light activity than before; and a method for producing such composition. The composition contains two kinds of particles which are: (i) titanium oxide particles with a tin component and a visible light activity-enhancing transition metal component being solid-dissolved therein, and with the surfaces of the titanium oxide particles being modified by an iron component and a silicon component that are not solid-dissolved in the titanium oxide particles; and (ii) antimicrobial metal-containing metal particles.

Abstract: A laminate includes a semiconductor substrate and a photosensitive resin layer formed on the semiconductor substrate. The photosensitive resin layer contains resin having a silicone skeleton or acrylic resin. The semiconductor substrate has a stepped surface on one side. A recessed portion formed by the stepped surface is filled with a pre-wetting solvent, and the photosensitive resin layer is formed thereon. The recessed portion formed by the stepped surface on the stepped substrate is filled fully with the photosensitive composition containing the resin having silicone skeleton or the acrylic resin, and the laminate can provide the flat photosensitive resin film. Further, there is a method for manufacturing the laminate with less material loss and a patterning method using the laminate.

Abstract: In a method of manufacturing porous glass base for optical fiber, a liquid organic siloxane raw material stored in a raw material tank of internal pressure P1 is controlled by a mass flow controller at a predetermined flow rate and pumped through pipe of internal pressure P2 to a vaporizer, the liquid raw material is vaporized in the vaporizer and supplied as a gas raw material to a burner, and the silica fine particles formed by burning the gas raw material in the burner are deposited to form a porous glass base material, where P1?P2 is satisfied.

Abstract: A resist composition is provided comprising a base polymer and a quencher comprising a cyclic ammonium salt having a fluorinated saturated hydrocarbyl group or fluorinated aryl group. The resist composition has a high sensitivity and forms a pattern with improved LWR or CDU, independent of whether it is of positive or negative tone.

Abstract: A method for transferring alignment marks between substrate systems includes providing a substrate having semiconductor devices and alignment marks in precise alignment with the semiconductor devices; and physically transferring and bonding the semiconductor devices and the alignment marks to a temporary substrate of a first substrate system. The method can also include physically transferring and bonding the semiconductor devices and the alignment marks to a mass transfer substrate of a second substrate system; and physically transferring and bonding the semiconductor devices and the alignment marks to a circuitry substrate of a third substrate system. A system for transferring alignment marks between substrate systems includes the substrate having the semiconductor devices and the alignment marks in precise alignment with the semiconductor devices. The system also includes the first substrate system, and can include the second substrate system and the third substrate system.

Abstract: A bio-electrode composition contains: (A) a polymer compound containing a repeating unit-a having a structure selected from the group consisting of salts of ammonium, sodium, potassium, and silver formed with any of fluorosulfonic acid, fluorosulfonimide, and N-carbonyl-fluorosulfonamide; and (B) a silicone compound having a polyglycerin structure. This bio-electrode composition is able to form a living body contact layer for a bio-electrode which enable quick signal collection after attachment to skin.

Abstract: A composition for forming a silicon-containing resist underlayer film contains at least one or more kinds of a quaternary ammonium salt shown by the following general formula (A-1), and a thermally crosslinkable polysiloxane (Sx), where Ar1 represents an aromatic group having 6 to 20 carbon atoms, or a heteroaromatic group having 4 to 20 carbon atoms. R11 represents an alkyl group, alkenyl group, oxoalkyl group, or oxoalkenyl group having 1 to 12 carbon atoms, an aryl group having 6 to 20 carbon atoms, or an aralkyl group or aryloxoalkyl group having 7 to 12 carbon atoms. Some or all of hydrogen atoms of these groups are optionally substituted. Z? represents an organic or inorganic anion as a counterion of the quaternary ammonium cation. An object is to provide a silicon-containing resist underlayer film having high effect of suppressing ultrafine pattern collapse and appropriate etching rate in multilayer resist methods.

Abstract: The present invention is an onium salt represented by the following general formula (1), where n1 represents an integer of 0 or 1; n2 represents an integer of 0 to 3; R1a represents a halogen atom or a hydrocarbyl group having 1 to 20 carbon atoms and optionally containing a heteroatom; n3 represents an integer of 0 to 3; R1b represents a hydrocarbyl group having 1 to 36 carbon atoms and optionally containing a heteroatom; n4 represents an integer of 1 or 2; and Z+ represents an onium cation. This provides a novel onium salt to be contained in a resist composition in lithography with a positive or negative resist, and the onium salt has high sensitivity and excellent resolution, can improve LWR and CDU, and can also suppress collapse of a resist pattern.

Abstract: An onium salt having formula (1) is provided. A chemically amplified resist composition comprising the onium salt as a PAG has advantages including high solvent solubility, high sensitivity, a high contrast, and improved lithography properties such as EL and LWR when processed by photolithography using high-energy radiation.

Abstract: A sulfonium salt of specific structure has a high decomposition efficiency and a high acid diffusion controlling ability upon exposure. A resist composition comprising the sulfonium salt offers a high sensitivity, reduced LWR and improved CDU independent of whether it is of positive or negative tone.

Abstract: A resist composition comprising a quencher containing a sulfonium salt composed of a C5-C20 aromatic carboxylic acid anion substituted with a halogen atom or a halogen atom-containing group and a sulfonium cation having the following formula (1).