Abstract: A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.
Type:
Grant
Filed:
July 27, 2010
Date of Patent:
May 12, 2015
Assignee:
Sigma-Aldrich Co. LLC
Inventors:
Rajesh Odedra, Neil Boag, Jeff Anthis, Ravi Kanjolia
Abstract: The present disclosure provides compositions and methods for acetylating histones at targeted chromosomal locations in a cell. In particular, the disclosure provides a fusion protein comprising a DNA binding domain and at least one histone acetyltransferase (HAT) domain, such that the DNA binding domain targets the fusion protein to a targeted chromosomal location and the HAT domain acetylates histones at the targeted location.
Abstract: The present invention provides non-human mammalian cell lines that are deficient in CMP-Neu5Ac hydroxylase (Cmah) and/or glycoprotein alpha-1,3-galactosyltransferase (Ggta1). Also provided are methods for using the cells disclosed herein for producing recombinant proteins with human-like patterns of glycosylation.
Type:
Grant
Filed:
June 29, 2012
Date of Patent:
March 17, 2015
Assignee:
Sigma-Aldrich Co. LLC
Inventors:
Nan Lin, Henry J. George, Joaquina Mascarenhas, Trevor N. Collingwood, Kevin J. Kayser, Katherine Achtien
Abstract: The present invention relates to diionic liquid salts of dicationic or dianionic molecules, as well as solvents comprising such diionic liquids and the use of such diionic liquids as the stationary phase in a gas chromatographic column.
Abstract: Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted ?3-allyl)(carbonyl)metal complexes.
Type:
Grant
Filed:
August 8, 2012
Date of Patent:
January 6, 2015
Assignee:
Sigma-Aldrich Co. LLC
Inventors:
Rajesh Odedra, Neil Boag, Jeff Anthis, Ravi Kanjolia, Mark Saly
Abstract: The present invention provides compositions comprising a metal amidoborane and an amine, and processes for preparing the metal amidoborane compositions. In particular, the process comprises contacting ammonia borane with a metal amide in the presence of an amine solvent to form the metal amidoborane composition. The invention also provides methods for generating hydrogen, wherein the method comprises heating the metal amidoborane composition such that hydrogen is released.
Type:
Grant
Filed:
April 13, 2010
Date of Patent:
December 30, 2014
Assignee:
Sigma-Aldrich Co. LLC
Inventors:
Viktor Balema, Kanth Josyula, Guolin Xu, Nathaniel Wallock, Scott Batcheller, Peng Gao, Shashi Jasty
Abstract: The present invention provides cell lines deficient in mannosyl (alpha-1,3-)-glycoprotein beta-1,2-N-acetylglucosaminyltransferase I (Mgat1). Also provided are methods for producing the Mga1 deficient cell lines and methods for using the Mgat1 deficient cell lines for the production of recombinant proteins having simple glycoforms.
Type:
Application
Filed:
January 10, 2013
Publication date:
November 27, 2014
Applicant:
SIGMA-ALDRICH CO. LLC
Inventors:
Nan Lin, Natalie Sealover, Henry George, Kevin Kayser
Abstract: The present invention provides methods for modifying chromosomal sequences. In particular, methods are provided for using RNA-guided endonucleases or modified RNA-guided endonucleases to modify targeted chromosomal sequences.
Abstract: The present invention provides methods for modifying chromosomal sequences. In particular, methods are provided for using RNA-guided endonucleases or modified RNA-guided endonucleases to modify targeted chromosomal sequences.
Abstract: The present invention provides synthetic oligonucleotides that mimic the function of short RNAs such as, for example, microRNAs or short interfering RNAs. In particular, the synthetic oligonucleotides comprise a duplex region comprising an unpaired bulge in one of the strands.
Abstract: The present invention generally relates to the large-scale (e.g., greater than 1 kg scale) preparation of low molecular weight polylysine or polyornithine in high yield by preparing a polylysine or polyornithine having a weight average molecular weight from about 12,500 Daltons to about 22,000 Daltons and hydrolyzing it to produce a polylysine or polyornithine having a weight average molecular weight from about 5,500 Daltons to about 12,000 Daltons.
Abstract: Imidazolium-based dicationic liquid salts and methods of using such imidazolium-based dicationic liquid salts in techniques such as ESI-MS are provided.
Abstract: The present invention relates to diionic liquid salts of dicationic or dianionic molecules, as well as solvents comprising diionic liquids and the use of diionic liquids as the stationary phase in a gas chromatographic column.
Abstract: Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).
Type:
Grant
Filed:
January 7, 2010
Date of Patent:
March 4, 2014
Assignee:
Soulbrain Sigma-Aldrich Ltd.
Inventors:
Jae Sun Jung, Su Hyong Yun, Minchan Kim, Sung Won Han, Yong Joo Park, Su Jung Shin, Ki Whan Sung, Sang Kyung Lee
Abstract: Methods are provided to form and stabilize high-? dielectric films by chemical phase deposition processes using metal-source precursors and cerium-based ?-diketonate precursors according to Formula I: Ce(L)x (Formula I) wherein: L is a ?-diketonate; and x is 3 or 4. Further provided are methods of improving high-? gate property of semiconductor devices by using cerium precursors according to Formula I. High-? dielectric films are also provided comprising hafnium oxide, titanium oxide or mixtures thereof, and further containing a permittivity maintaining or increasing amount of cerium atoms.
Type:
Grant
Filed:
May 22, 2009
Date of Patent:
December 24, 2013
Assignee:
Sigma-Aldrich Co. LLC
Inventors:
Paul Raymond Chalker, Peter Nicholas Heys
Abstract: Precursors suitable for chemical vapor deposition, especially ALD, of hafnium oxide or zirconium oxide, have the general formula: (R1Cp)2MR2 wherein Cp represents a cyclopentadienyl ligand, R1 is H or a substituting alkyl group, alkoxy group or amido group of the Cp ligand, R2 is an alkyl group, an alkoxy group or an amido group and M is hafnium or zirconium.
Type:
Grant
Filed:
June 8, 2006
Date of Patent:
October 29, 2013
Assignee:
Sigma-Aldrich Co. LLC
Inventors:
Peter Nicholas Heys, Paul Williams, Fuquan Song
Abstract: Molybdenum (IV) amide complexes are disclosed herein corresponding in structure to Formula (I): wherein: L is —NR1R2; R1 and R2 are C1-C6-alkyl or hydrogen; R is C1-C6-alkyl; and n is zero, 1, 2 or 3. Further, methods of forming MoO2 films by atomic layer deposition (ALD) using Formula (I) complexes and Mo[N(Me)(Et)]4 are disclosed herein.
Type:
Application
Filed:
August 25, 2011
Publication date:
August 1, 2013
Applicant:
Sigma-Aldrich Co LLC
Inventors:
Peter Nicholas Heys, Rajesh Odedra, Sarah Louise Hindley
Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
Type:
Grant
Filed:
March 15, 2013
Date of Patent:
September 9, 2014
Assignee:
Sigma-Aldrich Co. LLC
Inventors:
Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra