Patents Assigned to Sigma-Aldrich
  • Patent number: 9028917
    Abstract: A method for forming a cobalt-containing thin film by a vapor deposition process is provided. The method comprises using at least one precursor corresponding in structure to Formula (I); wherein R1 and R2 are independently C2-C8-alkyl; x is zero, 1 or 2; and y is zero or 1; wherein both x and y can not be zero simultaneously.
    Type: Grant
    Filed: July 27, 2010
    Date of Patent: May 12, 2015
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Rajesh Odedra, Neil Boag, Jeff Anthis, Ravi Kanjolia
  • Publication number: 20150079657
    Abstract: The present disclosure provides compositions and methods for acetylating histones at targeted chromosomal locations in a cell. In particular, the disclosure provides a fusion protein comprising a DNA binding domain and at least one histone acetyltransferase (HAT) domain, such that the DNA binding domain targets the fusion protein to a targeted chromosomal location and the HAT domain acetylates histones at the targeted location.
    Type: Application
    Filed: February 28, 2013
    Publication date: March 19, 2015
    Applicant: SIGMA-ALDRICH CO. LLC
    Inventors: Qingzhou Ji, Carol Kreader
  • Patent number: 8980642
    Abstract: The present invention relates to the use of cyanocinnamic acid derivatives as a matrix in the MALDI mass spectrometry of an analyte.
    Type: Grant
    Filed: July 10, 2008
    Date of Patent: March 17, 2015
    Assignee: Sigma-Aldrich International GmbH
    Inventors: Michael Karas, Thorsten Wolfgang Jaskolla
  • Patent number: 8980643
    Abstract: Dicationic liquid salts and methods of using such dicationic liquid salts in techniques such as ESI-MS are provided.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: March 17, 2015
    Assignee: Sigma-Aldrich Co., LLC
    Inventor: Daniel W. Armstrong
  • Patent number: 8980583
    Abstract: The present invention provides non-human mammalian cell lines that are deficient in CMP-Neu5Ac hydroxylase (Cmah) and/or glycoprotein alpha-1,3-galactosyltransferase (Ggta1). Also provided are methods for using the cells disclosed herein for producing recombinant proteins with human-like patterns of glycosylation.
    Type: Grant
    Filed: June 29, 2012
    Date of Patent: March 17, 2015
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Nan Lin, Henry J. George, Joaquina Mascarenhas, Trevor N. Collingwood, Kevin J. Kayser, Katherine Achtien
  • Patent number: 8956445
    Abstract: The present invention relates to diionic liquid salts of dicationic or dianionic molecules, as well as solvents comprising such diionic liquids and the use of such diionic liquids as the stationary phase in a gas chromatographic column.
    Type: Grant
    Filed: March 30, 2012
    Date of Patent: February 17, 2015
    Assignee: Sigma-Aldrich Co.
    Inventors: Daniel W. Armstrong, Jared Anderson
  • Patent number: 8927748
    Abstract: Organometallic complexes and use thereof in thin film deposition, such as CVD and ALD are provided herein. The organometallic complexes are (alkyl-substituted ?3-allyl)(carbonyl)metal complexes.
    Type: Grant
    Filed: August 8, 2012
    Date of Patent: January 6, 2015
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Rajesh Odedra, Neil Boag, Jeff Anthis, Ravi Kanjolia, Mark Saly
  • Patent number: 8920760
    Abstract: The present invention provides compositions comprising a metal amidoborane and an amine, and processes for preparing the metal amidoborane compositions. In particular, the process comprises contacting ammonia borane with a metal amide in the presence of an amine solvent to form the metal amidoborane composition. The invention also provides methods for generating hydrogen, wherein the method comprises heating the metal amidoborane composition such that hydrogen is released.
    Type: Grant
    Filed: April 13, 2010
    Date of Patent: December 30, 2014
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Viktor Balema, Kanth Josyula, Guolin Xu, Nathaniel Wallock, Scott Batcheller, Peng Gao, Shashi Jasty
  • Publication number: 20140349341
    Abstract: The present invention provides cell lines deficient in mannosyl (alpha-1,3-)-glycoprotein beta-1,2-N-acetylglucosaminyltransferase I (Mgat1). Also provided are methods for producing the Mga1 deficient cell lines and methods for using the Mgat1 deficient cell lines for the production of recombinant proteins having simple glycoforms.
    Type: Application
    Filed: January 10, 2013
    Publication date: November 27, 2014
    Applicant: SIGMA-ALDRICH CO. LLC
    Inventors: Nan Lin, Natalie Sealover, Henry George, Kevin Kayser
  • Publication number: 20140273233
    Abstract: The present invention provides methods for modifying chromosomal sequences. In particular, methods are provided for using RNA-guided endonucleases or modified RNA-guided endonucleases to modify targeted chromosomal sequences.
    Type: Application
    Filed: May 30, 2014
    Publication date: September 18, 2014
    Applicant: SIGMA-ALDRICH CO., LLC
    Inventors: Fuqiang Chen, Gregory Davis
  • Publication number: 20140273230
    Abstract: The present invention provides methods for modifying chromosomal sequences. In particular, methods are provided for using RNA-guided endonucleases or modified RNA-guided endonucleases to modify targeted chromosomal sequences.
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Applicant: SIGMA-ALDRICH CO., LLC
    Inventors: Fuqiang Chen, Gregory Davis
  • Patent number: 8796238
    Abstract: The present invention provides synthetic oligonucleotides that mimic the function of short RNAs such as, for example, microRNAs or short interfering RNAs. In particular, the synthetic oligonucleotides comprise a duplex region comprising an unpaired bulge in one of the strands.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: August 5, 2014
    Assignee: Sigma-Aldrich Co. LLC
    Inventor: Kevin Forbes
  • Patent number: 8791226
    Abstract: The present invention generally relates to the large-scale (e.g., greater than 1 kg scale) preparation of low molecular weight polylysine or polyornithine in high yield by preparing a polylysine or polyornithine having a weight average molecular weight from about 12,500 Daltons to about 22,000 Daltons and hydrolyzing it to produce a polylysine or polyornithine having a weight average molecular weight from about 5,500 Daltons to about 12,000 Daltons.
    Type: Grant
    Filed: February 5, 2013
    Date of Patent: July 29, 2014
    Assignee: Sigma-Aldrich Co. LLC
    Inventor: Ettigounder Ponnusamy
  • Patent number: 8742331
    Abstract: Imidazolium-based dicationic liquid salts and methods of using such imidazolium-based dicationic liquid salts in techniques such as ESI-MS are provided.
    Type: Grant
    Filed: February 17, 2009
    Date of Patent: June 3, 2014
    Assignee: Sigma-Aldrich, Co.
    Inventor: Daniel W. Armstrong
  • Publication number: 20140121387
    Abstract: The present invention relates to diionic liquid salts of dicationic or dianionic molecules, as well as solvents comprising diionic liquids and the use of diionic liquids as the stationary phase in a gas chromatographic column.
    Type: Application
    Filed: January 2, 2014
    Publication date: May 1, 2014
    Applicant: Sigma-Aldrich Co. LLC
    Inventors: DANIEL W. ARMSTRONG, JARED ANDERSON
  • Patent number: 8663736
    Abstract: Provided is a germanium complex represented by Chemical Formula 1 wherein Y1 and Y2 are independently selected from R3, NR4R5 or OR6, and R1 through R6 independently represent (Ci-C7) alkyl. The provided germanium complex with an amidine derivative ligand is thermally stable, is highly volatile, and does not include halogen components. Therefore, it may be usefully used as a precursor to produce high-quality germanium thin film or germanium-containing compound thin film by metal organic chemical vapor deposition (MOCVD) or atomic layer deposition (ALD).
    Type: Grant
    Filed: January 7, 2010
    Date of Patent: March 4, 2014
    Assignee: Soulbrain Sigma-Aldrich Ltd.
    Inventors: Jae Sun Jung, Su Hyong Yun, Minchan Kim, Sung Won Han, Yong Joo Park, Su Jung Shin, Ki Whan Sung, Sang Kyung Lee
  • Patent number: 8613975
    Abstract: Methods are provided to form and stabilize high-? dielectric films by chemical phase deposition processes using metal-source precursors and cerium-based ?-diketonate precursors according to Formula I: Ce(L)x (Formula I) wherein: L is a ?-diketonate; and x is 3 or 4. Further provided are methods of improving high-? gate property of semiconductor devices by using cerium precursors according to Formula I. High-? dielectric films are also provided comprising hafnium oxide, titanium oxide or mixtures thereof, and further containing a permittivity maintaining or increasing amount of cerium atoms.
    Type: Grant
    Filed: May 22, 2009
    Date of Patent: December 24, 2013
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Paul Raymond Chalker, Peter Nicholas Heys
  • Patent number: 8568530
    Abstract: Precursors suitable for chemical vapor deposition, especially ALD, of hafnium oxide or zirconium oxide, have the general formula: (R1Cp)2MR2 wherein Cp represents a cyclopentadienyl ligand, R1 is H or a substituting alkyl group, alkoxy group or amido group of the Cp ligand, R2 is an alkyl group, an alkoxy group or an amido group and M is hafnium or zirconium.
    Type: Grant
    Filed: June 8, 2006
    Date of Patent: October 29, 2013
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Peter Nicholas Heys, Paul Williams, Fuquan Song
  • Publication number: 20130196065
    Abstract: Molybdenum (IV) amide complexes are disclosed herein corresponding in structure to Formula (I): wherein: L is —NR1R2; R1 and R2 are C1-C6-alkyl or hydrogen; R is C1-C6-alkyl; and n is zero, 1, 2 or 3. Further, methods of forming MoO2 films by atomic layer deposition (ALD) using Formula (I) complexes and Mo[N(Me)(Et)]4 are disclosed herein.
    Type: Application
    Filed: August 25, 2011
    Publication date: August 1, 2013
    Applicant: Sigma-Aldrich Co LLC
    Inventors: Peter Nicholas Heys, Rajesh Odedra, Sarah Louise Hindley
  • Patent number: RE45124
    Abstract: Methods of forming titanium-containing films by atomic layer deposition are provided. The methods comprise delivering at least one precursor to a substrate, wherein the at least one precursor corresponds in structure to Formula I: wherein: R is C1-C6-alkyl; n is zero, 1, 2, 3, 4 or 5; L is C1-C6-alkoxy or amino, wherein the amino is optionally independently substituted 1 or 2 times with C1-C6-alkyl.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: September 9, 2014
    Assignee: Sigma-Aldrich Co. LLC
    Inventors: Peter Nicholas Heys, Andrew Kingsley, Fuquan Song, Paul Williams, Thomas Leese, Hywel Owen Davies, Rajesh Odedra