Abstract: There is provided a differential scanning calorimeter possessing an accommodation chamber accommodating a sample to be measured and a reference material, a heater heating the accommodation chamber, a differential heat flow detector outputting a temperature difference between the sample to be measured and the reference material as a heat flow difference signal, a cooling block cooling-controlled to a predetermined temperature, a heat resistor which mechanically connects the cooling block and the accommodation chamber and forms a heat flow path between both, a first fixation means which fixes the heat resistor to the cooling block by pressing the former while being biased by a constant elastic force, and a second fixation means which fixes the accommodation chamber to the heat resistor by pressing the former while being biased by a constant elastic force.

Abstract: To measure surface information and physical information of a sample with high accuracy by promoting linearity in Z direction by nullifying cross talk in XY directions as less as possible, there is provided a surface information measuring apparatus including a probe having a stylus, a Z actuator fixed with the probe for being elongated and contracted in Z direction orthogonal to a sample surface B when applied with a voltage, an applicator for applying the voltage to the Z actuator, and a controller for controlling to operate the applicator, in which the Z actuator includes a piezoelectric member capable of being elongated and contracted in Z direction and a plurality of divided electrodes provided to be respectively electrically independent from each other in a state of being divided by at least 3 or more in a peripheral direction at an inner peripheral face or an outer peripheral face of the piezoelectric member for applying voltages to elongate and contract the piezoelectric member within ranges of contact

Abstract: The present invention provides a working method using a scanning probe which can enhance a working speed and prolong a lifetime of the probe. The present invention provides the working method using a scanning probe which works a sample by performing the relative scanning of a probe supported on a cantilever on the sample at a predetermined scanning speed. The working method can work the object to be worked while forcibly and relatively vibrating the probe in the direction orthogonal to or parallel to a working surface of the sample at low frequency of 100 to 1000 Hz.

Abstract: To include a focused ion beam apparatus fabricating a sliced specimen by processing a specimen as well as observing the sliced specimen, a scanning electron microscope observing the slice specimen, a gas-ion beam irradiation apparatus performing finishing processing by irradiating a gas-ion beam onto a surface of the sliced specimen, a specimen stage on which the sliced specimen is fixed and having at least one or more rotation axis, a specimen posture recognition means recognizing positional relation of the sliced specimen with respect to the specimen stage and a specimen stage control means controlling the specimen stage based on a specimen posture recognized by the posture recognition means and an installation angle of the gas-ion beam irradiation apparatus in order to allow an incident angle of the gas-ion beam with respect to the obverse or the reverse of the sliced specimen to be a desired value.

Abstract: A leaf spring 4 constituting an elastic member one end of which is fixed to a foundation 6, and other end of which is brought into contact with a laminating type piezoelectric element 2 or a driven member 5 is constituted such that a thickness is thinned from a side of the foundation 6 to a side of the laminating type piezoelectric element 2 to make a moment of inertia smaller on a side of a portion of other end held by the laminating type piezoelectric element 2 than a portion on one end side fixed to the foundation 6. Further, a strain gage sensor 8 is attached to a side face 4a of the leaf spring 4 constituting one face of one end of the leaf spring 4 proximate to the laminating type piezoelectric element 2 orthogonal to a direction of elongating and contracting the laminating type piezoelectric element 2 constituting a side of the driven member 5.

Abstract: There is provided a fluorescent X-ray analysis apparatus in which a detection lower limit has been improved by reducing an X-ray generating subsidiarily and detected. The fluorescent X-ray analysis apparatus is one which possesses an X-ray source irradiating a primary X-ray, and a detector in which a collimator having a through-hole in its center part has been placed in a front face, and in which, by the detector, there is detected a primary fluorescent X-ray which generates from a sample by irradiating the primary X-ray to a sample, and passes through the through-hole of the collimator.

Abstract: In a sample height regulating method, an area including the observation point on the sample is scan-irradiated with a first charged particle beam to obtain a first secondary electron image including the observation point. An area including the observation point on the sample is then scan-irradiated with a second charged particle beam to obtain a second secondary electron image including the observation point. Thereafter, based on magnifications of the first secondary electron image and the second secondary electron image and a distance between the observation point in the first secondary electron image and the observation point in the second secondary electron image, a height of the sample required for focusing the first charged particle beam and the second charged particle beam on the observation point is calculated. A sample stage supporting the sample is then displaced so as to position the sample at the calculated sample height.

Abstract: To provide a fluorescent X-ray analysis apparatus, whereby a peak-back ratio is improved by effectively exciting a focused element and a detection limit of the focused element is improved by decreasing a scattered X-ray to be a background. A sample housing has one or more wall surfaces made of a material through which an X-ray transmits and an X-ray source is arranged so that a primary X-ray is irradiated on the wall surface. In addition, the sample housing is arranged so that a wall surface different from a wall surface on which the primary X-ray is irradiated is opposed to an X-ray detector incident window. Further, the primary X-ray from the X-ray source is arranged so as to be able to irradiate the wall surface of the sample housing to which the X-ray detector incident window is opposed. The sample housing has a shape extending in response to extension of a viewing filed that a detection element in the X-ray detector is seen from the X-ray detector incident window.

Abstract: A scanning probe microscope has a self-detection type probe structure including a cantilever having an electrically conductive probe at a distal end thereof, a supporting part, and a piezoresistance element whose resistance value changes depending on the deflection of the cantilever. A detector applies a predetermined voltage to the piezoresistance element and detects the value of the current passing through the piezoresistance element to detect deflection of the cantilever. A sample table mounts a sample such that a surface of the sample confronts a tip of the probe, and a moving mechanism relatively moves the sample table and the probe tip in X, Y and Z directions. A controller controls the moving mechanism to maintain a fixed distance between the probe tip and the sample surface and measures the surface shape of the sample on the basis of the detection result of the detector.

Abstract: A scanning microscope probe in which a palladium covering film is formed on the surface of the protruding portion of a cantilever, and the base end portion of a nanotube is disposed in contact with the palladium covering film with the tip end portion of the nanotube protruding to the outside, thus allowing the tip end to be used as a probe needle end for detecting signals. A coating film is formed to cover all or part of the surface of this base end portion, and the nanotube is thus firmly fastened to the cantilever. Since the base end portion adheres tightly to the palladium covering film, both of them are electrically continuous. This palladium covering film allows, as an electrode film, the application of a voltage to the nanotube or the passage of an electric current through the nanotube, showing also good adhesion to the nanotube and cantilever.

Abstract: The present invention provides a probe for a scanning magnetic force microscope having a resolution sufficient to allow observation of a magnetic storage medium with 1200 kFCI or higher recording densities, a method for producing the probe, and a method for forming a ferromagnetic alloy film on a carbon nanotube. In the context of the present invention, the probe for a scanning magnetic force microscope comprises a carbon nanotube whose surface is at least in part coated with a ferromagnetic alloy film consisting of any one of a Co—Fe alloy and a Co—Ni alloy, wherein the arithmetic mean roughness (Ra 10 ?m) of the surface of the ferromagnetic alloy film is controlled to 1.15 nm or less. A method for producing such probes for a scanning magnetic force microscope and a method for forming such a ferromagnetic alloy film on a carbon nanotube, so as to achieve such mean surface roughness by controlling the growth rate of the ferromagnetic alloy film within the range of 1.0 to 2.5 nm/min, is also disclosed.

Abstract: A processing probe for repairing a defective portion in a sample has a cantilever and a probe separate and independent from the cantilever and integrally connected to an end portion of the cantilever for scratch-processing a defective portion of a sample. The cantilever and the probe are conductive for preventing the generation of electrostatic charges by friction of the probe against the sample during scratch-processing of the defective portion of the sample.

Abstract: In order to make it possible to improve throughput of AFM scratch processing, enable correction of small defects in clear defect correction with a high degree of precision, and enable correction in a shorter period of time in the event of overcutting by AFM scratch processing, throughput of AFM scratch processing is increased by maximizing high-resolution of the electron beam device and minimizing the time taken in observations using a device incorporating both an electro-optical system and an AFM head in a vacuum, correcting small clear defects with high precision by eliminating portions left over from AFM scratch processing after applying a clear defect correction film using an electron beam while providing light-blocking film raw material, and correction in a short time is made possible by eliminating portions remaining using AFM scratch processing after applying a clear defect correction film using an electron beam while providing light-blocking film raw material also in cases of overcutting in AFM scratc

Abstract: To prevent an influence from effecting on an oscillating state of a cantilever by firmly fixing a main body portion, there is provided a cantilever holder for attachably and detachably fixing a cantilever which is provided with a stylus at a front end thereof and a base end side of which is supported by a main body portion in a single-supported state, the cantilever holder including a base member having a mounting portion for mounting the main body portion in a state of being positioned at a predetermined position, a holding member made to be able to be brought into contact with at least a surface of the main body portion in a state of mounting the main body portion on the mounting portion and extended in a direction substantially orthogonal to a longitudinal direction (axis line A direction) of the cantilever, and pressing means for pressing both ends of the holding member to the base member by a predetermined pressure, fixing the main body portion to the mounting portion by way of the holding member and cap

Abstract: A scanning probe microscope has a probe tip for undergoing a scanning operation to scan a sample surface in X- and Y-directions parallel to the sample surface and for undergoing movement in a Z-direction vertical to the sample surface. A vibration unit vibrates the probe tip at a vibration frequency that resonates with of forcedly vibrates the probe tip. An observation unit collects observational data from the sample surface when the probe tip is in proximity or contact with the sample surface. A detection unit detects a variation in the state of vibration of the probe tip when the probe tip is in proximity or contact with the sample surface during a scanning operation.

Abstract: In a manipulator needle portion defect repairing method, the existence of an abrasion or a fracture in a needle portion for holding a sample at an end of a manipulator disposed in an FIB device is confirmed using a microscope function of the FIB device. The abrasion or the fracture in the needle portion is then repaired by chemical vapor deposition using a focused ion beam of the FIB device.

Abstract: A sample support of the present invention is prepared such that a silicon substrate is used as a raw material, the thickness structure having a shape and a thickness of 10 ?m or less is prepared using a semiconductor silicon process technique. The sample support of the present invention is adhered to a partially-cut mesh in a state that a sample portion is not adhered. Further, a plurality of portions where the samples are mounted is arranged on the same substrate.

Abstract: In order to establish processing techniques capable of making multi-tip probes with sub-micron intervals and provide such microscopic multi-tip probes, there is provided an outermost surface analysis apparatus for semiconductor devices etc. provided with a function for enabling positioning to be performed in such a manner that there is no influence on measurement in electrical measurements at an extremely small region using this microscopic multi-tip probe, and there are provided the steps of making a cantilever 1 formed with a plurality of electrodes 3 using lithographic techniques, and forming microscopic electrodes 6 minute in pitch by sputtering or gas-assisted etching a distal end of the cantilever 1 using a focused charged particle beam or using CVD.

Abstract: A method is adopted for deposition technology using a focused ion beam device, characterized by enabling structures to be formed by using phenanthrene as a source gas and using ions of gallium or gold, silicon or beryllium etc. of energies of 5 to 100 keV from a liquid-metal ion source as ions so as to give a gas blowing density of five to ten times greater than the case of deposition in the related art, with directionality of the gas blowing being both isotropic and symmetrical.

Abstract: A focused ion beam apparatus having two pieces of probers brought into contact with two points of a surface of a sample, a voltage source for applying a constant voltage between the two points with which the probers are brought into contact, and an ammeter for measuring a current flowing between the two points, in which a conductive film is formed to narrow a gap thereof between the two points by operating a deflection electrode and a gas gun and the current flowing between the two points is monitored, and when the current becomes a predetermined value, a focused charged particle beam irradiated to the surface of the sample is made OFF by the blanking electrode.