Patents Assigned to SII NanoTechnology
  • Patent number: 6953519
    Abstract: In order to establish processing techniques capable of making multi-tip probes with sub-micron intervals and provide such microscopic multi-tip probes, there is provided an outermost surface analysis apparatus for semiconductor devices etc. provided with a function for enabling positioning to be performed in such a manner that there is no influence on measurement in electrical measurements at an extremely small region using this microscopic multi-tip probe, and there are provided the steps of making a cantilever 1 formed with a plurality of electrodes 3 using lithographic techniques, and forming microscopic electrodes 6 minute in pitch by sputtering or gas-assisted etching a distal end of the cantilever 1 using a focused charged particle beam or using CVD.
    Type: Grant
    Filed: August 29, 2003
    Date of Patent: October 11, 2005
    Assignee: SII NanoTechnology Inc.
    Inventors: Yoshiharu Shirakawabe, Hiroshi Takahashi, Tadashi Arai
  • Patent number: 6949745
    Abstract: An electron beam apparatus has an optical axis, an electron beam source for generating an electron beam directed along the optical axis, and a magnetic field lens having an axis coincident with the optical axis for focusing the electron beam onto a sample which is subjected to a negative voltage so that secondary electrons are emitted from the sample. The magnetic field lens has a conductive cylinder surrounding a part of the optical axis to permit the passage therethrough of an electron beam from the electron beam source. A first detector detects secondary electrons emitted by the sample in a direction away from the optical axis and is disposed at a position generally confronting the conductive cylinder. A second detector is disposed over the conductive cylinder. A Wien filter deflector deflects secondary electrons emitted by the sample toward and for detection by the second detector. The Wien filter deflector is disposed on the optical axis and between the conductive cylinder and the second detector.
    Type: Grant
    Filed: May 14, 2003
    Date of Patent: September 27, 2005
    Assignee: SII NanoTechnology Inc.
    Inventor: Akira Yonezawa
  • Patent number: 6948356
    Abstract: A viscoelasticity measuring instrument for measuring a viscoelasticity of a sample has a temperature detection control unit for obtaining, prior to a practical measurement operation, a measurement executable temperature range for the sample by an experimental temperature control operation and application of AC power. A main measurement control unit carries out a viscoelasticity measurement operation within the temperature range obtained by the temperature detection control unit.
    Type: Grant
    Filed: August 6, 2004
    Date of Patent: September 27, 2005
    Assignee: SII NanoTechnology Inc.
    Inventors: Nobuaki Okubo, Jun Nagasawa
  • Patent number: 6941798
    Abstract: A scanning probe is microscope has a cantilever having a probe at a disal end thereof and an oscillator for generating a resonance signal near a resonance of the cantilever. A vibrating device receives the resonance signal as a driving signal for vibrating the cantilever. A variable gain amplifier adjusts a gain of displacement signal corresponding to displacement of the vibrating cantilever so as to satisfy the equation G=(A/A0)*G0 to control a quality factor value of the cantilever resonance to an optimal quality factor value, where G represents a gain value of the variable gain amplifer, A represents a preselected oscillation amplitude of the oscillator, A0 represents an initial oscillation amplitude of the oscillator, and G0 represents a gain value of the variable gain amplifier when the initial oscillation amplitude of the oscillator is A0.
    Type: Grant
    Filed: September 16, 2003
    Date of Patent: September 13, 2005
    Assignee: SII NanoTechnology Inc.
    Inventors: Takehiro Yamaoka, Kazutoshi Watanabe, Kazunori Ando, Yoshiharu Shirakawabe
  • Patent number: 6932504
    Abstract: A self-detecting type cantilever for an atomic force microscope (AFM) has an electro-flexural conversion element for converting a flexural amount of the cantilever into an electric current or voltage, a temperature measurement element disposed at a front end portion of the cantilever for measuring a temperature, and a heating element disposed at the front end portion of the cantilever for heating the temperature measurement element. The temperature measurement element and the heating element are superposed with each other on a main face of the cantilever via an electrical insulating layer. As a result, even if the amount of electric energy supplied to the heating element is reduced, it is possible to effectively supply an amount of heat necessary for measurement to the temperature measurement element. Therefore, by minimizing the heat to be supplied to a sample and the cantilever, the respondency of measurement is improved and temperature measurement can be performed with a high degree of accuracy.
    Type: Grant
    Filed: March 24, 2003
    Date of Patent: August 23, 2005
    Assignee: SII NanoTechnology Inc.
    Inventors: Hiroshi Takahashi, Yoshiharu Shirakawabe, Tadashi Arai
  • Patent number: 6934920
    Abstract: In a sample analysis method, positional coordinates of reference points on a surface of the sample are measured using a first device. Positional coordinates of an object on the surface of the sample to be analyzed are also measured using the first device. A sample piece containing on a surface thereof a preselected number of the reference points and the object is removed from the sample. The sample piece is then mounted on a second device different from the first device. The positional coordinates of the reference points on the surface of the sample piece are then measured using the second device. The positional coordinates of the object on the surface of the sample piece are then calculated using the positional coordinates of the reference points measured by the second device and the positional coordinates of the object measured by the first device. The object on the surface of the sample piece is then analyzed.
    Type: Grant
    Filed: October 5, 2001
    Date of Patent: August 23, 2005
    Assignee: SII NanoTechnology Inc.
    Inventors: Toshiaki Fujii, Masamichi Oi, Atsushi Yamauchi
  • Patent number: 6924481
    Abstract: Automatic pattern matching and shape measurement are enabled by adjusting a brightness level of a microscope image based on information of a local region of the image so that a magnified image of the local region takes on an appropriate brightness and is not affected by brighter peripheral portions of the image, thereby enabling feature extraction of a desired pattern. By using the inventive method in an energized beam apparatus having a sample stage capable of linear and tilting movement, a series of operations including cross section forming, sample tilting, cross section observation, and pattern recognition, may be performed on an automated basis.
    Type: Grant
    Filed: May 30, 2002
    Date of Patent: August 2, 2005
    Assignee: SII NanoTechnology Inc.
    Inventors: Yutaka Ikku, Tetsuji Nishimura
  • Patent number: 6911979
    Abstract: A derived data display adjustment system for a sample analyzer allows user selection of one or more displayed images to be subjected to a derived data calculation process. A derived data user interface is displayed on a display screen in response to user selection of one or more displayed images to enable user selection of a derived data calculation process. A determination is made as to whether or not display of the derived data may be achieved without interfering with other displayed images. If not, a derived data adjustment user interface is displayed to enable a user to select a convenient display location for display of the derived data.
    Type: Grant
    Filed: December 4, 2001
    Date of Patent: June 28, 2005
    Assignee: SII NanoTechnology Inc.
    Inventor: Rintaro Nakatani
  • Patent number: 6904791
    Abstract: A scanning probe microscope simply and accurately confirms whether or not a sample shape satisfies specified conditions. A pseudo reference image Sref1 comprises a pair of reference line profiles Lref1 and Lref2 arranged apart from each other in parallel. An operator moves and rotates the position of the pseudo reference image Sref1 on a screen so that a sample shape line profile fits between the reference line profiles Lref1 and Lref2 of the pseudo reference image Sref1. If it is possible to fit the line profile of the sample shape between the reference line profiles Lref1 and Lref2, it is determined that the sample shape is in spec, while if it is not possible to fit the line profile of the sample shape between the reference line profiles Lref1 and Lref2, no matter how the pseudo reference image Sref1 is moved and rotated, it is determined that the sample shape is out of spec.
    Type: Grant
    Filed: May 14, 2003
    Date of Patent: June 14, 2005
    Assignee: SII NanoTechnology Inc.
    Inventor: Akihiko Honma
  • Patent number: 6907359
    Abstract: A superconducting radiation detector relies upon the abruptness of a superconducting transition edge to converts a slight heat generated by an X-ray into a high signal current and uses an electrothermal self-feedback mechanism to provide a high energy resolution and a high counting rate. A calorimeter incorporating such a radiation detector has an absorber for absorbing X-rays, a resistor formed of a superconductor provided under the absorber and having a resistance value that varies with heat generated in the absorber, superconducting wires for connecting the resistor to an external current detector, a membrane on which the resistor is provided, and an insulating film provided between the resistor and the absorber and having at least one hole penetrating therethrough, the resistor and the absorber being in contact through the hole.
    Type: Grant
    Filed: April 17, 2003
    Date of Patent: June 14, 2005
    Assignee: SII NanoTechnology Inc.
    Inventors: Keiichi Tanaka, Toshimitsu Morooka, Satoshi Nakayama
  • Patent number: 6901349
    Abstract: An analysis apparatus has a measurement head for measuring characteristics of a sample, a calibration conditions file comprising at least one calibration condition obtained by carrying out device calibration for the measurement head in advance, and a measurement head controller for designating one of the calibration conditions within the calibration conditions file. Measurement sequence data comprised of a sequence of measurement steps has measurement conditions for carrying out measurements by the measurement head and the calibration conditions designated by the measurement head controller. A measurement device refers to each measurement step of the measurement sequence data and carries out measurement after inputting the measurement conditions and the calibration conditions for each measurement step to the measurement head.
    Type: Grant
    Filed: August 20, 2003
    Date of Patent: May 31, 2005
    Assignee: SII NanoTechnology Inc.
    Inventor: Jun Nagasawa
  • Patent number: 6897450
    Abstract: A magnetic pole of a magnetic field type lens is divided into a first magnetic pole section that is at ground potential, and a second magnetic pole section facing a sample and to which a negative high voltage is applied, the first magnetic pole section and the second magnetic pole section 212 being electrically insulated from each other, and an electric field type bi-potential lens is made up of an electrode attached to the first magnetic pole section so as to surround an electron beam path. High resolution observation with small chromatic aberration factor Cs, Cc is made possible without forming a positive high voltage section inside an electron beam path of a lens barrel.
    Type: Grant
    Filed: October 15, 2001
    Date of Patent: May 24, 2005
    Assignee: SII NanoTechnology Inc.
    Inventor: Akira Yonezawa
  • Patent number: 6891171
    Abstract: A method is provided for repairing a phase shift mask. The phase shift mask has a substrate and a shifter containing a defect and disposed on the substrate. An ion beam is irradiated onto the defect while a region of the shifter that includes the defect is supplied with a first gas containing silicon, an oxidizing second gas, and a third gas for controlling an amount of ions from the ion beam which penetrate the region of the shifter to form a silicon thin film on the defect and thereby repair the phase shift mask.
    Type: Grant
    Filed: April 19, 2000
    Date of Patent: May 10, 2005
    Assignee: SII NanoTechnology Inc.
    Inventors: Ryoji Hagiwara, Yoshihiro Koyama
  • Patent number: 6885727
    Abstract: An apparatus determines the thickness and composition of a multi-layered sample comprised of at least a copper layer and a tin-copper alloy plating layer disposed on the copper layer. The sample is irradiated with primary X-rays and an energy-dispersive X-ray detector detects fluorescent X-rays and diffracted X-rays emitted from the sample. An X-ray spectrum of the detected fluorescent X-rays and diffracted X-rays is generated. The concentration of copper in the tin-copper alloy plating layer of the sample is determined utilizing peak intensities of the diffracted X-rays in the X-ray spectrum. The thickness of the tin-copper alloy plating layer of the sample is determined utilizing peak intensities of the fluorescent X-rays in the X-ray spectrum and the determined copper concentration.
    Type: Grant
    Filed: August 6, 2002
    Date of Patent: April 26, 2005
    Assignee: SII NanoTechnology Inc.
    Inventor: Koichi Tamura
  • Patent number: 6870161
    Abstract: An apparatus for processing and observing a sample has a sample stage for supporting a sample at a preselected location thereof, a focused ion beam irradiation system for irradiating the sample with a focused ion beam along an optical axis to cut out a portion from the sample, and a side entry stage disposed over the sample stage and extending slantingly with respect to the optical axis of the focused ion beam irradiated by the focused ion beam irradiation system. The side entry stage has a microscope sample holder for picking up the cut-out sample portion directly from the preselected location of the sample and for supporting the sample portion. The microscope sample holder is configured to be removed from the side entry stage while supporting the sample portion and to be connected to an entry stage of a microscope device for observing the sample portion.
    Type: Grant
    Filed: August 20, 2003
    Date of Patent: March 22, 2005
    Assignee: SII NanoTechnology Inc.
    Inventors: Tatsuya Adachi, Toshiaki Fujii, Hiroshi Sawaragi, Yasuhiko Sugiyama
  • Patent number: 6867407
    Abstract: A light probe microscope has a probe having a tip, a mechanism for positioning the probe tip closely to a sample surface and causing two-dimensional scanning movement between the probe tip and the sample, a light source for emitting light to an area proximate the probe tip and the sample, a two-dimensional image sensor for receiving the light radiated from the sample and producing a two-dimensional image of the sample in accordance therewith, and a device for producing a light image based on a signal intensity of light in a detection region of the two-dimensional image.
    Type: Grant
    Filed: December 26, 2001
    Date of Patent: March 15, 2005
    Assignee: SII NanoTechnology Inc.
    Inventor: Hiroshi Muramatsu
  • Patent number: 6864481
    Abstract: A probe for a scanning probe microscope has a cantilever portion and a microscopic probe portion formed of a solid columnar tip at a distal end of the cantilever portion by deposition using an organic gas decomposed by a focused ion beam inside a vacuum chamber. The probe is sufficiently narrow and has high abrasion resistance and rigidity. The tip may be grown to extend from the cantilever portion at an angle shifted by an angle at which the cantilever portion is inclined during scanning of the probe portion across a sample surface, so that the columnar tip is perpendicular to the sample surface during the scanning. The tip may be formed of a conductive material such as tungsten of diamond-like carbon by FIB-CVD.
    Type: Grant
    Filed: December 3, 2002
    Date of Patent: March 8, 2005
    Assignee: SII NanoTechnology Inc.
    Inventors: Takashi Kaito, Masatoshi Yasutake, Tatsuya Adachi
  • Patent number: 6855940
    Abstract: In a charged particle microscope equipped with a sample stage having an inclination function, the invention provides a construction that prevents inclination driving of the sample stage from affecting other peripheral devices to be additionally installed such as an optical microscope. In the charged particle microscope according to the invention, a sample stage having an inclination mechanism includes a rotation support portion of the inclination mechanism on sidewalls of a vacuum chamber, and at least a detection portion of other peripheral devices additionally installed such as (1) an optical microscope, (2) a laser scattering microscope and (3) an optical height detection system is fitted to the rotation support portion inside the chamber in such a fashion as to be capable of moving with a rotary shaft of the inclination mechanism, and members that cannot be arranged in vacuum are installed outside the chamber.
    Type: Grant
    Filed: March 24, 2003
    Date of Patent: February 15, 2005
    Assignee: SII NanoTechnology Inc.
    Inventor: Hiroto Mutou
  • Patent number: 6852973
    Abstract: The present invention sets out to provide a scanning charged particle microscope equipped with a rapid control function capable of extrapolating an in-focus point from image information for a single frame and an automatic focusing system capable of reliably and precisely carrying out a focusing operation for a horizontal pattern image. The automatic focusing system provided in the scanning charged particle microscope of the present invention is provided with means for changing a focal point each raster scan line, and control means for comparing image information each scanning line and extrapolating focusing positions. The scanning line can then be made to be an inclined scanning line that is a combination of a horizontal component and a vertical component with respect to a chip array on a semiconductor wafer. Further, a method is adopted comprising a first step of reliably taking in a coarse in-focus point and a second step of detecting the in-focus point with a high degree of precision.
    Type: Grant
    Filed: April 9, 2003
    Date of Patent: February 8, 2005
    Assignee: SII NanoTechnology Inc.
    Inventors: Hidekazu Suzuki, Atsushi Uemoto
  • Patent number: 6850593
    Abstract: In a fluorescent X-ray analysis apparatus, a diffraction X-ray is removable from a sample even if it is formed of a mixture of fine crystals. A movable collimator mechanism capable of detecting only a collimate component of an X-ray optical flux is provided in a secondary X-ray path extending between a sample and an X-ray detector. Spectrum measurement is conducted on the same sample when the collimator mechanism is inserted and removed from the secondary X-ray path.
    Type: Grant
    Filed: March 20, 2000
    Date of Patent: February 1, 2005
    Assignee: SII NanoTechnology Inc.
    Inventor: Koichi Tamura