Abstract: A method of controlling a switching converter having a plurality of interleaved parallel branches, can include controlling conduction phases of power switches of the plurality of interleaved parallel branches to be overlapped when a load changes from a light load to a heavy load, in order to improve dynamic response performance of the switching converter. A control circuit for a switching converter with a plurality of interleaved parallel branches, can control conduction phases of power switches of the interleaved parallel branches to be overlapped when a load changes from a light load to a heavy load, in order to improve dynamic response performance of the switching converter.

Abstract: An isolated power converter can include: a primary side having a primary winding and a primary power transistor; a secondary side having a secondary winding and a secondary power transistor; a secondary control circuit configured to change a voltage across the secondary winding to change a voltage across the primary winding during a period when both the primary power transistor and the secondary power transistor are in a turn-off state; and a primary control circuit configured to control switching states of the primary power transistor, such that an output signal of the isolated power converter matches an output demand.

Abstract: A buffer circuit coupled in parallel to a rectifier circuit in a secondary side of a flyback converter, the buffer circuit including: a capacitive element configured to be charged by an output capacitor when a primary power switch in the flyback converter is turned on; and the capacitive element being configured to be discharged through a secondary winding of a transformer when the primary power switch is turned off, in order to reduce energy stored in a primary leakage inductor in a primary side of the flyback converter, whereby a spike voltage generated in a secondary leakage inductor in the secondary side is reduced, and efficiency of the flyback converter is improved.

Abstract: A control circuit for a switching converter having a main power switch, the control circuit including: a voltage generation circuit configured to be connected with a common connection terminal of the main power switch and an inductor to receive a drain-source voltage of the main power switch, and to generate a first voltage according to the drain-source voltage; a valley detection circuit configured to generate a valley detection signal according to the first voltage when the drain-source voltage resonates to a valley; and where the control circuit is configured to turn on the main power switch according to the valley detection signal.

Abstract: A control circuit for a switching converter, where: the control circuit is configured to generate a switching control signal according to an output voltage of the switching converter to control a switching state of a power transistor in the switching converter, and to adjust an output current of the switching converter; and a change trend of a length of a switching period of the power transistor is opposite to a change trend of the output voltage.

Abstract: An overvoltage protection circuit configured to prevent an overvoltage of an output voltage of a switching converter, can include: an output voltage simulation circuit configured to generate an output voltage simulation signal according to circuit parameters of the switching converter, where the output voltage simulation signal changes along with the output voltage; and an overvoltage signal generator configured to activate an overvoltage signal when a feedback voltage is less than a first threshold value and the output voltage simulation signal is greater than a second threshold value.

Abstract: A laterally diffused metal oxide semiconductor device can include: a well region having a second doping type; a reduced surface field effect layer of a first doping type formed by an implantation process in a predetermined region of the well region, where a length of the reduced surface field effect layer is less than a length of the well region; a body region of the first doping type extending from a top surface of the well region into the well region; a drain portion of the second doping type extending from the top surface of the well region into the well region; and an insulating structure located between the body region and the drain portion, at least a portion of the insulating structure is located on the top surface of the well region.

Abstract: A package structure applied to power converters can include: a first die having a first power transistor and a first control and drive circuit; a second die having a second power transistor; a connection device configured to couple the first and second power transistors in series between a high-level pin and a low-level pin of a lead frame of the package structure; and where a common node of the first and second power transistors can be coupled to an output pin of the lead frame through a metal connection structure with a low interconnection resistance.

Abstract: A synchronous rectification control circuit for controlling a switching circuit comprising a synchronous rectifier switch, can include: a drive circuit configured to generate a drive signal to control switching states of the synchronous rectifier switch; and a voltage regulation circuit configured to control the drive circuit to adjust an amplitude of the drive signal to decrease to a preset threshold in an adjustment state when a drain-source voltage of the synchronous rectifier switch is greater than an adjustment threshold before the synchronous rectifier switch is turned off, where a time that the voltage regulation circuit is in the adjustment state is an adjustment time.

Abstract: An apparatus includes a plurality of control modules coupled to a multi-phase power converter having a plurality of power stage circuits correspondingly coupled to the plurality of control modules, where each control module includes: a first port coupled to a second port of a previous control module; a second port coupled to a first port of a next control module, and being configured to generate a transmission signal for the next control module; and where the transmission signal represents at least two types of information, and is configured to control the corresponding power stage circuit to operate sequentially.

Abstract: A control circuit for a resonant converter, that is configured to: adjust a conduction time of one power switch and a conduction time of one corresponding synchronous rectifier switch in the resonant converter in a resonant period detection mode; control a resonance current to cross zero twice during the conduction time of the synchronous rectifier switch; and obtain a resonant period of the resonant converter.

Abstract: An alternating current to direct current conversion circuit includes a rectifier circuit, a first DC to DC conversion module and a second DC to DC conversion module. The first DC to DC conversion module includes multiple power switches and an inductor and is coupled between the rectifier circuit and the second DC to DC conversion module. Multiple power switches in the first DC to DC conversion module are controlled to be turned on simultaneously, so that a voltage across each of the power switches in the first DC to DC conversion module is reduced. The alternating current to direct current conversion circuit includes no power switch with a high withstand voltage, so that the alternating current to direct current conversion circuit has a small volume, low switching loss, less energy loss, and good heat dissipation, thereby increasing power density.

Abstract: A multi-input single-output circuit can include: a first circuit module configured to receive a first input voltage source, and including a first power switch; a second circuit module configured to receive a second input voltage source, and including a switching power converter, where the switching power converter comprises a second power switch; and a control circuit configured to control one of the first and second circuit modules to supply power for a load, or to stop supplying power for the load, according to states of the first and second input voltage sources and control parameters of the circuit module that is in operation.

Abstract: A frequency modulation circuit can include: a modulation circuit configured to generate a digital modulation signal and an analog modulation signal according to an input signal of the frequency modulation circuit; and a phase-locked loop having a voltage-controlled oscillator configured to receive a reference frequency, and to modulate a frequency of an output signal of the voltage-controlled oscillator according to the analog modulation signal and the digital modulation signal.

Abstract: An alternating current to direct current conversion circuit includes N first power converters instead of a boost circuit including a power switch with a high withstand voltage. The N first power converters each have an input end and theses input ends are connected in series, to perform power factor correction. Therefore, the alternating current to direct current conversion circuit includes no power switch with a high withstand voltage, so that the alternating current to direct current conversion circuit has a small volume, low switching loss, less energy loss, and good heat dissipation, thereby increasing power density.

Abstract: A communication control circuit for a power supply chip, can include: a main control die having a main control circuit; a plurality of sub-control dice configured to respectively receive a control signal sent by the main control die, where each sub-control die comprises a sub-control circuit; and where a reference ground of each sub-control die is different from a reference ground of the main control die, the reference grounds of the plurality of sub-control dice are different with each other, and communication between the main control die and each sub-control die is achieved by a corresponding level conversion circuit.

Abstract: A laterally diffused metal oxide semiconductor device can include: a base layer; a source region and a drain region located in the base layer; a first dielectric layer located on a top surface of the base layer and adjacent to the source region; a voltage withstanding layer located on the top surface of the base layer and located between the first dielectric layer and the drain region; a first conductor at least partially located on the first dielectric layer; a second conductor at least partially located on the voltage withstanding layer; and a source electrode electrically connected to the source region, where the first and second conductors are spatially isolated, and the source electrode at least covers a space between the first and second conductors.

Abstract: A method for controlling a phase-locked loop circuit, can include: acquiring values of a voltage-controlled oscillator capacitor array control signal respectively corresponding to desired values of a frequency control word signal and acquiring values of a charge pump current control signal respectively corresponding to the desired values of the frequency control word signal in a calibration mode, where the frequency control word signal characterizes a ratio of a desired locked frequency to a frequency of a reference signal; and determining a target value of the voltage-controlled oscillator capacitor array control signal corresponding to a target value of the frequency control word signal and a target value of the charge pump current control signal corresponding to the target value of the frequency control word signal in a phase-locked mode, in order to control the phase-locked loop circuit to achieve phase lock.

Abstract: A control circuit for a switching converter, can include: a current compensation signal generating circuit configured to generate a current compensation signal based on a current sampling signal representing an inductor current; and a control signal generating circuit configured to adjust a current control parameter of a current control loop in the switching converter according to the current compensation signal, in order to increase power factor (PF) and reduce total harmonic distortion (THD).

Abstract: A method of manufacturing an optoelectronic integrated device can include: providing a semiconductor substrate including at least one optoelectronic device in the semiconductor substrate; forming a first dielectric layer on a first surface of the semiconductor substrate; forming a multilayer insulating layer on the first dielectric layer; forming a first opening in the multilayer insulating layer to expose the first dielectric layer above the optoelectronic device area; and forming a second dielectric layer on the dielectric layer, where the first dielectric layer and the second dielectric layer are anti-reflection layers.