Abstract: Power converter circuits, structures, and methods are disclosed herein. In one embodiment, a hybrid converter can include: (i) a first switching device controllable by a control signal; (ii) an inductor coupled to the first switching device and an output; and (iii) a control circuit configured to receive feedback from the output for generation of the control signal to control the first switching device, where the control circuit includes a first detection circuit configured to detect first and second output conditions, the control circuit being configured to operate the first switching device in a switch control in response to the control signal when the first output condition is detected, and to operate the first switching device in a linear control region when the second output condition is detected.

Abstract: Methods and circuits for synchronous rectifier control are disclosed herein. In one embodiment, a synchronous rectifier control circuit can include: (i) a first sense circuit to sense a voltage between first and second power terminals of a synchronous rectifier device prior to a turn-on of the device, where a timing of the turn-on of the synchronous rectifier device is adjustable using a first control signal generated from the first sense circuit; (ii) a second sense circuit configured to sense a voltage between the first and second power terminals after a turn-off of the device, where a timing of the turn-off of the device is adjustable using a second control signal generated from the second sense circuit; and (iii) a driver control circuit configured to receive the first and second control signals, and to generate therefrom a gate control signal configured to drive a control terminal of the synchronous rectifier device.

Abstract: Methods of making, structures, devices, and/or applications for lateral double-diffused metal oxide semiconductor (LDMOS) transistors are disclosed. In one embodiment, an LDMOS transistor can include: (i) an n-doped deep n-well (DNW) region on a substrate; (ii) a gate oxide and a drain oxide between a source region and a drain region of the LDMOS transistor, the gate oxide being adjacent to the source region, the drain oxide being adjacent to the drain region; (iii) a conductive gate over the gate oxide and a portion of the drain oxide; (iv) a p-doped p-body region in the source region; (v) an n-doped drain region in the drain region; (vi) a first n-doped n+ region and a p-doped p+ region adjacent thereto in the p-doped p-body region of the source region; and (vii) a second n-doped n+ region in the drain region.

Abstract: Single inductor based switching regulators are disclosed herein. In one embodiment, a switching regulator can include: (i) output switches coupled to a common inductor node and to a corresponding output supply node, where each output supply node has a voltage converted from an input voltage received at an input supply node; (ii) an inductor coupled to the common inductor node and to first and second input switches, where the first input switch is coupled to ground, and the second input switch is coupled to the input supply node, the first and second switches controlling charge through the inductor; and (iii) a control circuit receiving feedback signals indicating output voltages on the output supply nodes, the control circuit controlling the output switches for regulation of the output voltages in response to the feedback signals.