Abstract: The present invention relates to a technology enabling a normal access by controlling a read access through an arbiter in a circuit for controlling an access to memory to which clock signals are input through two ports, respectively for a read access to a single port memory. The present invention includes an arbiter that generates an internal clock signal through a state transition among a first state for generating a first clock signal, a second state for generating a second clock signal, a standby state and a neutral state when generating the internal clock signal for reading data from the memory on the basis of the first clock signal and the second clock signal, and a read end signal that is supplied from the memory.

Abstract: A technology capable of simplifying a process and securing a misalignment margin when bonding two wafers to manufacture an image sensor using backside illumination photodiodes. When manufacturing an image sensor through a 3D CIS (CMOS image sensor) manufacturing process, two wafers, that is, a first wafer and a second wafer are electrically connected using the vias of one wafer and the bonding pads of the other wafer. Also, when manufacturing an image sensor through a 3D CIS manufacturing process, two wafers are electrically connected using the vias of both the two wafers.

Abstract: Disclosed is a luminance compensation apparatus of an organic light emitting diode panel including a reference pixel element unit that is installed at an outer peripheral portion of a display area on an organic light emitting diode panel and operate corresponding to a pixel element aligned in the display area, and a driving chip that is provided in an area including the reference pixel element unit of the outer peripheral portion of the display area, compares a luminance value of light incident from the reference pixel element unit with a reference luminance value to calculate a luminance deviation value based on a comparison result, controls driving of pixel elements aligned in the display area according to the luminance deviation value, and allows light, luminance deviation of which has been compensated, to be irradiated.

Abstract: The present invention relates to a backlight image sensor chip having improved chip driving performance, in which a region other than a pad region, on which a conductive pad is formed, and a sensing region, on which an optical filter is formed, is used as a region for auxiliary driving so that additional functions such as auxiliary power supply, auxiliary signal transmission and auxiliary operation control can be performed, without additional process, in the backlight image sensor chip having a restricted area, thereby improving the chip driving performance.

Abstract: The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.

Abstract: Disclosed is an image sensor with a 3D stack structure, in which pixels of a top plate are realized as image pixels and pixels of a bottom plate are realized as pixels for realizing a phase difference AF, so that the phase difference AF is realized without loss of resolution. In the image sensor with a 3D stack structure, a problem of the reduction of resolution, which is a disadvantage of an existing imaging surface phase difference AF device, is solved, so that a fast phase difference AF is realized while maintaining high resolution without a separate phase difference AF module.

Abstract: A method for manufacturing a through-hole silicon via (TSV) employs the conventional trench insulation process to readily manufacture a through-hole silicon via (TSV) with achievement of an effective electrical insulation between the through-hole silicon via (TSV) and the silicon.

Abstract: The present invention relates to a technology with enables an image signal processor to output image data at a faster speed while using a memory having a smaller capacity. The image signal processor includes a pair of line memories for storing image data output from an analog-digital converter such that the image data alternates in units of horizontal lines, and outputting the stored image data in units of blocks according to a first-in-first-out method.

Abstract: A semiconductor memory is formed by stacking a plurality of substrates and memory cells on each substrate are connected by data dump lines. A switch may intervene between the memory cell and the data dump line. When data of each substrate is dumped by the data dump line, a problem of decrease in a speed and an increase in power consumption due to a parasitic component can be minimized. Further, a core circuit including the memory cell may be disposed on one substrate and a peripheral circuit unit may be disposed on the remaining substrates.

Abstract: The present invention relates to a backlight image sensor chip having improved chip driving performance, in which a region other than a pad region, on which a conductive pad is formed, and a sensing region, on which an optical filter is formed, is used as a region for auxiliary driving so that additional functions such as auxiliary power supply, auxiliary signal transmission and auxiliary operation control can be performed, without additional process, in the backlight image sensor chip having a restricted area, thereby improving the chip driving performance.

Abstract: The present disclosure relates to a method for divided scanning of a touch panel, in which a touch panel scanning process is divided into a pre-scan process and a main scan process. According to the embodiment of the present invention, a touch panel scan process, which had been performed in existing touch panels, may be divided into a pre-scan process and a main scan process, and the performed in various manners. Thus, while power consumption is reduced, the speed of response to an external touch can be improved.

Abstract: The present invention relates to a substrate stacked image sensor having a dual detection function, in which when first to fourth photodiodes are formed in a first substrate, a fifth photodiode is formed in a second substrate, and the substrates are stacked and combined with each other, the first to fourth photodiodes and the fifth photodiode are combined with each other to obtain a complete photodiode as an element of one pixel, and signals individually detected in each photodiode are selectively read or added to be read according to necessity.

Abstract: An image sensor cell is divided into two chips, and a capacitor for noise reduction is formed in a bottom wafer in correspondence with a unit pixel of a top wafer in a stack chip package image sensor having a coupling structure of the two chips, so that noise characteristics of the image sensor are improved. A stack chip package image sensor includes: a first semiconductor chip that includes a photodiode, a transmission transistor, and a first conductive pad and outputs image charge, which is output from the photodiode, through the first conductive pad; and a second semiconductor chip that includes a drive transistor, a selection transistor, a reset transistor, and a second conductive pad and supplies a corresponding pixel with an output voltage corresponding to the image charge received from the first semiconductor chip through the second conductive pad. The second semiconductor chip includes a capacitor for noise reduction.

Abstract: A pixel circuit for a global shutter of a substrate-stacked image sensor may include a semiconductor chip including: a photodiode configured to output electric charges generated through a light sensing operation; and a reset node configured to receive a reset voltage from a reset voltage node and reset the photodiode. The semiconductor chip may have a structure in which the semiconductor chip is stacked over another semiconductor chip.

Abstract: The present invention relates to a CMOS image sensor including a color microlens, in which the color characteristics of a microlens are improved by replacing a microlens made of a transparent material with a material having characteristics similar to those of a color filter, and a manufacturing method thereof. In accordance with the CMOS image sensor including a color microlens and the manufacturing method thereof according to the present invention, color characteristics is improved. Since formation processes of a color filter and a microlens are performed at one time, additional processes for planarization and step difference adjustment are not necessary, so that an entire process is simplified. In the progress of light, since there is no interface between materials, reflection, refraction and the like are reduced, so that it is possible to increase light efficiency.

Abstract: The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.

Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, defining a space for a pad in the back side dielectric layer and forming vias that pass through the back side dielectric layer and the anti-reflective layer and contact back sides of super contacts which are formed on the Si substrate, filling one or more metals in the vias and the defined space for the pad, and removing a remnant amount of the metal filled in the space for the pad through planarization by a CMP (chemical mechanical polishing) process.

Abstract: The present invention relates to a method for electrically connecting wafers, which physically bonds two wafers through an oxide-to-oxide bonding method and then electrically connects the two wafers through a butting contact structure. The wafers are physically bonded to each other through a relatively simple method, and then electrically connected to through TSVs or butting contact holes. Therefore, since the fabrication process may be simplified, a process error may be reduced, and the product yield may be improved.

Abstract: Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes.

Abstract: An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.