Abstract: Disclosed is an image sensor with a 3D stack structure, in which pixels of a top plate are realized as image pixels and pixels of a bottom plate are realized as pixels for realizing a phase difference AF, so that the phase difference AF is realized without loss of resolution. In the image sensor with a 3D stack structure, a problem of the reduction of resolution, which is a disadvantage of an existing imaging surface phase difference AF device, is solved, so that a fast phase difference AF is realized while maintaining high resolution without a separate phase difference AF module.

Abstract: The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.

Abstract: The present invention relates to a technology with enables an image signal processor to output image data at a faster speed while using a memory having a smaller capacity. The image signal processor includes a pair of line memories for storing image data output from an analog-digital converter such that the image data alternates in units of horizontal lines, and outputting the stored image data in units of blocks according to a first-in-first-out method.

Abstract: The present invention relates to a backlight image sensor chip having improved chip driving performance, in which a region other than a pad region, on which a conductive pad is formed, and a sensing region, on which an optical filter is formed, is used as a region for auxiliary driving so that additional functions such as auxiliary power supply, auxiliary signal transmission and auxiliary operation control can be performed, without additional process, in the backlight image sensor chip having a restricted area, thereby improving the chip driving performance.

Abstract: The present disclosure relates to a method for divided scanning of a touch panel, in which a touch panel scanning process is divided into a pre-scan process and a main scan process. According to the embodiment of the present invention, a touch panel scan process, which had been performed in existing touch panels, may be divided into a pre-scan process and a main scan process, and the performed in various manners. Thus, while power consumption is reduced, the speed of response to an external touch can be improved.

Abstract: An image sensor cell is divided into two chips, and a capacitor for noise reduction is formed in a bottom wafer in correspondence with a unit pixel of a top wafer in a stack chip package image sensor having a coupling structure of the two chips, so that noise characteristics of the image sensor are improved. A stack chip package image sensor includes: a first semiconductor chip that includes a photodiode, a transmission transistor, and a first conductive pad and outputs image charge, which is output from the photodiode, through the first conductive pad; and a second semiconductor chip that includes a drive transistor, a selection transistor, a reset transistor, and a second conductive pad and supplies a corresponding pixel with an output voltage corresponding to the image charge received from the first semiconductor chip through the second conductive pad. The second semiconductor chip includes a capacitor for noise reduction.

Abstract: The present invention relates to a substrate stacked image sensor having a dual detection function, in which when first to fourth photodiodes are formed in a first substrate, a fifth photodiode is formed in a second substrate, and the substrates are stacked and combined with each other, the first to fourth photodiodes and the fifth photodiode are combined with each other to obtain a complete photodiode as an element of one pixel, and signals individually detected in each photodiode are selectively read or added to be read according to necessity.

Abstract: The present invention relates to a CMOS image sensor including a color microlens, in which the color characteristics of a microlens are improved by replacing a microlens made of a transparent material with a material having characteristics similar to those of a color filter, and a manufacturing method thereof. In accordance with the CMOS image sensor including a color microlens and the manufacturing method thereof according to the present invention, color characteristics is improved. Since formation processes of a color filter and a microlens are performed at one time, additional processes for planarization and step difference adjustment are not necessary, so that an entire process is simplified. In the progress of light, since there is no interface between materials, reflection, refraction and the like are reduced, so that it is possible to increase light efficiency.

Abstract: The present invention relates to a CMOS image sensor including an infrared pixel with enhanced spectral characteristics in which a stepped portion is formed between color filters of RGB pixels and a filter of an infrared pixel, and a manufacturing method thereof. A stepped portion is formed between color filters and an infrared filter according to respective pixels and the thicknesses of the filters are arbitrarily adjusted regardless of the characteristics of material in the formation of the color filters and the infrared filter, so that crosstalk characteristics are improved.

Abstract: A method for forming a pad in a wafer with a three-dimensional stacking structure is disclosed. The method includes bonding a device wafer that includes an Si substrate and a handling wafer, thinning a back side of the Si substrate, depositing an anti-reflective layer on the thinned back side of the Si substrate, depositing a back side dielectric layer on the anti-reflective layer, defining a space for a pad in the back side dielectric layer and forming vias that pass through the back side dielectric layer and the anti-reflective layer and contact back sides of super contacts which are formed on the Si substrate, filling one or more metals in the vias and the defined space for the pad, and removing a remnant amount of the metal filled in the space for the pad through planarization by a CMP (chemical mechanical polishing) process.

Abstract: The present invention relates to a method for electrically connecting wafers, which physically bonds two wafers through an oxide-to-oxide bonding method and then electrically connects the two wafers through a butting contact structure. The wafers are physically bonded to each other through a relatively simple method, and then electrically connected to through TSVs or butting contact holes. Therefore, since the fabrication process may be simplified, a process error may be reduced, and the product yield may be improved.

Abstract: Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes.

Abstract: An image sensor having a wave guide includes a semiconductor substrate formed with a photodiode and a peripheral circuit region; an anti-reflective layer formed on the semiconductor substrate; an insulation layer formed on the anti-reflective layer; a wiring layer formed on the insulation layer and connected to the semiconductor substrate; at least one interlayer dielectric stacked on the wiring layer; and a wave guide connected to the insulation layer by passing through the interlayer dielectric and the wiring layer which are formed over the photodiode.

Abstract: A JPEG decoder having a scaling function includes an inverse discrete cosine transform block, wherein the JPEG decoder selectively performs an inverse discrete cosine transform on a part of pixel data of a macroblock through the inverse discrete cosine transform block and outputs a scaled image file. The JPEG decoder and the scaling method using the JPEG decoder increase a decoding speed, thereby enabling an image to be output in real time, especially when the JPEG decoder and/or the scaling method are applied to a mobile field. Also, the JPEG decoder and the scaling method using the JPEG decoder can achieve an efficient scaling, even without a separate circuit for scaling, thereby reducing a circuit size and the number of components.

Abstract: Provided is a pixel array having a wide dynamic range, good color reproduction, and good resolution and an image sensor using the pixel array. The pixel array includes a plurality of first type photodiodes, a plurality of second type photodiodes, and a plurality of image signal conversion circuits. A plurality of the second type photodiodes are disposed between the first type photodiodes which are two-dimensionally arrayed. A plurality of the image signal conversion circuits are disposed between the first type photodiodes and the second type photodiodes to process image signals detected by the first type photodiodes and the second type photodiodes. An area of the first type photodiodes is wider than an area of the second type photodiodes.

Abstract: The present invention relates to an image sensor in which substrates are stacked, wherein a substrate-stacked image sensor according to the present invention is configured such that a first photodiode is formed on a first substrate, a second photodiode is formed on a second substrate, the two substrates are aligned with and bonded to each other to electrically couple the two photodiodes to each other, thereby forming a complete photodiode within one pixel.

Abstract: A separation type unit pixel of an image sensor, which can control light that incidents onto a photodiode at various angles, and be suitable for a zoom function in a compact camera module by securing an incident angle margin, and a manufacturing method thereof are provided. The unit pixel of an image sensor includes: a first wafer including a photodiode containing impurities having an impurity type opposite to that of a semiconductor material and a pad for transmitting photoelectric charge of the photodiode to outside; a second wafer including a pixel array region in which transistors except the photodiode are arranged regularly, a peripheral circuit region having an image sensor structure except the pixel array, and a pad for connecting pixels with one another; and a connecting means connecting the pad of the first wafer and the pad of the second wafer.

Abstract: Disclosed is an image sensor for measuring illumination, proximity and color temperature, including: a light source unit configured to irradiate infrared with a wavelength of a specific band onto an object; a light source controller configured to control power supplied to the light source unit; an infrared transmission filter configured to allow only the infrared and visible ray with the wavelength of the specific band among light incident through a lens after being reflected by the object to selectively transmit therethrough; a first sensing unit provided with an image pixel for acquiring an image of the object introduced through the infrared transmission filter; and a second sensing unit configured to receive the infrared and the visible ray having passed through the infrared transmission filter and measure current illumination, proximity to the object and color temperature of the object.

Abstract: Sub-pixel current in an OLED display is forced to converge to a desired level regardless of the source of pixel current error. By using a feedback loop, the pixel transistor current is forced to be equal to a predetermined target current that is established by an analog control circuit. The predetermined target current is selected to generate the desired pixel transistor current through the sub-pixel, and can be set by setting a target voltage. The sub-pixels have a 3T cell structure including 3 TFTs, one TFT for connecting the data line to the storage capacitor, another TFT for driving the sub-pixel current, and still another TFT for connecting the OLED diode anode to the data line of the AMOLED panel. Thus, the feedback loop of the present invention (comprising Taps M and N of a resistor string, and an amplifier, a comparator, and digital logic) senses the pixel transistor current via the data lines of the AMOLED panel to compensate for Mura.

Abstract: An image sensor capable of realizing night-photographing and functions of a proximity sensor and an illuminance sensor. The image sensor includes a light source for emitting light toward a subject; a light source control section for controlling current applied to the light source; an illuminance sensor section for sensing an illuminance of surrounding environment; and a sensor section having an image sensor unit for sensing an image signal.