Abstract: A separation type unit pixel having a 3D structure for an image sensor, composed of a plurality of transistors, includes: a first wafer which includes a photodiode, a transfer transistor, a node of a floating diffusion area functioning as static electricity for converting electric charge into a voltage, and a pad connecting the floating diffusion area and the transfer transistor to an external circuit, respectively; a second wafer which includes the rest of the circuit elements constituting a pixel (i.e., a reset transistor, a source-follower transistor, and a blocking switch transistor), a read-out circuit, a vertical/horizontal decoder, a correlated double sampling (CDS) circuit which involves in a sensor operation and an image quality, an analog circuit, an analog-digital converter (ADC), a digital circuit, and a pad connecting each pixel; and a connecting means which connects the pad of the first wafer and the pad of the second wafer.

Abstract: An image sensor for reducing crosstalk includes anti-reflection films which are formed between a plurality of metal wire lines of the lowest metal wiring layer and a semiconductor substrate and between one of the metal wiring layers and another metal wiring layer. The image sensor having the anti-reflection films according to the present invention can reduce color crosstalk and noises in comparison with a conventional image sensor by using the anti-reflection films formed above the surroundings of the photodiodes.

Abstract: A method of bonding aluminum (Al) electrodes formed on two semiconductor substrates at a low temperature that does not affect circuits formed on the two semiconductor substrates is provided. The method includes: (a) forming aluminum (Al) electrodes on the two semiconductor substrates, respectively, and depositing a metal alloy that comprises aluminum (Al) and copper (Cu) onto the aluminum (Al) electrodes; (b) arranging the aluminum (Al) electrodes of the two semiconductor substrates to face with each other; and (c) heating the aluminum (Al) electrodes at a temperature lower than the melting point of the deposited metal alloy, and applying a specific pressure onto the two semiconductor substrates. Accordingly, bonding can be carried out at a temperature lower than the melting point of an Al0.83Cu0.17 alloy without having an effect on circuits formed on two semiconductor substrates, and can be selectively carried out at regions where pressure is applied.

Abstract: Provided is an optical image receiving device having a high and rapid sensitivity and a wide dynamic range manufacture in a CMOS process. The image receiving device includes a capacitor transistor for a special purpose in addition to a general structure of three transistors and a light receiving portion. The capacitor transistor has first and second source/drain ports connected to the capacitance node and the floating diffusion node, respectively, and is gated in response to activation of a predetermined capacitor control signal. In the CMOS optical image receiving device, the floating diffusion node is pumped over an external power voltage. Thus, the electronic potential of the floating diffusion node in the initialization state is much higher than the maximum voltage of the light receiving portion. Thus, the CMOS active pixel has a very high sensitivity in a region where the intensity of light is weak.

Abstract: An image sensor using a back-illuminated photodiode and a manufacturing method thereof are provided. According to the present invention, since a surface of the back-illuminated photodiode can be stably treated, the back-illuminated photodiode can be formed to have a low dark current, a constant sensitivity of blue light for all photodiodes, and high sensitivity. In addition, it is possible to manufacture an image sensor with high density by employing a three dimensional structure in which a photodiode and a logic circuit are separately formed on different substrates.

Abstract: In a driving method of a complementary metal oxide semiconductor active pixel, timing of a transmission control signal and a reset control signal generated in a read-out section is performed in advance in a reset section. A potential wall between a photodiode area and a transmission transistor having a size corresponding to one generated in the read-out section is generated in the reset section in advance and the photodiode area is filled with charges. A dead region is reduced in the read-out section. In the reset section, the transmission transistor connecting a collection node to accumulate the signal charges generated from the photodiode and the floating diffusive node is turned on at least one time, and a difference between an initial voltage of the collection node and a voltage of the reset level of the floating diffusive node is reduced.

Abstract: The present invention relates to a voice coil module (VCM), and more particularly, to a VCM used for lens fixation and displacement measurement in order to prevent and control power consumption. Accordingly, in the VCM, power is not additionally consumed in order to maintain a specific position of the lens in a state that a focus of the lens is adjusted. Further, the lens is not moved and an optical axis is not distorted when a vibration occurs while an image is captured. Furthermore, the lens can be accurately controlled by measuring the present position of the lens.

Abstract: A chip-stacked image sensor obtained by embodying an image sensor cell in two chips and combining the chips with each other is provided. The chip-stacked image sensor includes first and second semiconductor chips. The first semiconductor chip includes a plurality of image signal sensing cells for generating image charges corresponding to image signals sensed by at least four photodiodes and outputting the generated image charges through at least two common terminals and a plurality of image charge transmission pads. The second semiconductor chip includes a plurality of image signal conversion cells for converting the image signals into electrical signals and a plurality of image charge receiving pads. Here, the image charges generated by the image signal sensing cells are transmitted to corresponding image signal conversion cells via the plurality of image charge transmission pads and the plurality of image charge receiving pads.

Abstract: A three-dimensional image display apparatus using a flat panel display unit is provided. The three-dimensional image display apparatus includes a flat panel display unit, reflecting plate arrays reflecting incident light, and a vibrator vibrating the reflecting plate arrays from left to right or from right to left, wherein the reflecting plate arrays are moved according to time by an vibration of the vibrator, and wherein a three-dimensional image is displayed by changing an image of the flat panel display unit based on an angle of the reflecting plate arrays. The three-dimensional image display apparatus has advantages that no auxiliary apparatuses such as special glasses are required to recognize the three-dimensional image, and that has no deterioration of an image quality, which is the biggest drawback of a general three-dimensional image display apparatus, and that observation of a three-dimensional image is not limited to one person.