Abstract: A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Abstract: A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Abstract: An arrayed waveguide grating deposited on a wafer that includes an upper semiconductor layer comprising a first port, a plurality of second ports, a gate oxide layer, a polysilicon layer, and a plurality of arrayed waveguides. The gate oxide layer is deposited above the upper semiconductor layer. The polysilicon layer is deposited above the gate oxide layer. The plurality of arrayed waveguides extend between the first port and each one of the plurality of second ports. Each one of the plurality of arrayed waveguides are at least partially formed by the upper semiconductor layer, the polysilicon layer, and the gate oxide layer. Each one of the arrayed waveguides is associated with a portion of the polysilicon layer. Each portion of the polysilicon layer has a different cross-sectional area, wherein each of the arrayed waveguides has a different effective mode index.

Abstract: An apparatus and associated method for altering the propagation constant of a region of changable propagation constant in an optical waveguide. The method comprising positioning an electrode of a prescribed electrode shape proximate the waveguide. An altered region of changable propagation constant is projected into the waveguides that correspond, in shape, to the prescribed electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of changable propagation constant is controlled by varying the voltage.

Abstract: An optical waveguide device includes a first passive optical waveguide device and a second passive optical waveguide device. The first passive optical waveguide device is etched, at least in part, in a semiconductor layer of a wafer. The value and position of an effective mode index within the first passive optical waveguide device remains substantially unchanged over time. The second passive optical waveguide device is formed at least in part from a polysilicon layer deposited above an unetched portion of the semiconductor layer. The effective mode index of a region of static effective mode index within the optical waveguide is created by the polysilicon layer of the second passive optical waveguide device. The value and position of the effective mode index within the region of static effective mode index remains substantially unchanged over time. The optical waveguide forms at least a part of both the first passive optical waveguide device and the second passive optical waveguide device.

Abstract: A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Abstract: An apparatus and associated method for modulating the propagation constant of a region of modulating propagation constant in an optical waveguide. The method comprising positioning an electrode of a prescribed electrode shape proximate the waveguide. The region of modulating propagation constant is projected into the waveguides that correspond, in shape, to the prescribed electrode shape by applying a voltage to the shaped electrode. The propagation constant of the region of modulating propagation constant is controlled by varying the voltage.

Abstract: An optical interferometer apparatus and associated method including a beamsplitter, a first mirror, a second mirror, and a delay element. The beamsplitter splits an input optical signal into a first optical signal that flows along a first optical path and a second optical signal that flows along a second optical path. The first mirror reflects the first signal in the first path towards the beamsplitter to form a first return path. The second mirror reflects the second signal in the second path towards the beamsplitter to form a second return path. The delay element includes the first mirror that adjusts a time required for the first signal to flow from the beamsplitter along the first path, be reflected by the first mirror, and return along the first return path to the beamsplitter. The waveguide includes a region of changeable propagation constant disposed along a length of the waveguide.