Publication number: 20200377793
Abstract: An etching composition contains phosphoric acid, phosphoric anhydride, a compound represented by the following Formula 1, and a silane compound comprising at least one silicon (Si) atom, excluding the compound represented by Formula 1: wherein, in Formula 1, A is an n-valent radical, where n is an integer of 1 to 6, L is a direct bond or hydrocarbylene, Y is selected from NR1, O, PR2 and S, where R1 to R2 are independently hydrogen, halogen, a substituted or unsubstituted hydrocarbyl group, or non-hydrocarbyl group, X and Z are independently selected from N, O, P and S, and Ra to Rc are independently an unshared electron pair, hydrogen, or a substituted or unsubstituted hydrocarbyl group.
Type:
Application
Filed:
May 29, 2020
Publication date:
December 3, 2020
Applicants:
SK Innovation Co., Ltd., SK-Materials Co., Ltd.
Inventors:
Cheol Woo Kim, Min Kyung Seon, Yu Na Shim, Jae Hoon Kwak, Young Bom Kim, Jong Ho Lee, Jin Kyung Jo