Patents Assigned to SKC Co., Ltd.
  • Patent number: 11008430
    Abstract: Disclosed are a protective film for a polarizer with superior optical and mechanical properties, a polarizing plate including the same and a display device including the same.
    Type: Grant
    Filed: May 29, 2017
    Date of Patent: May 18, 2021
    Assignee: SKC CO., LTD.
    Inventors: Young Min Heo, Se Chul Lee, Da Woo Jeong, Jang Won Lee
  • Patent number: 11008434
    Abstract: Embodiments relate to a heat shrinkable film and a process for regenerating a polyester container using the same. The heat shrinkable film comprises a copolymerized polyester resin comprising a diol component and a dicarboxylic acid component and has a heat shrinkage rate of 30% or more in the main shrinkage direction upon thermal treatment at a temperature of 80° C. for 10 seconds and a melting point of 190° C. or higher as measured by differential scanning calorimetry. It not only solves the environmental problems by improving the recyclability of the polyester container, but also is capable of enhancing the yield and productivity.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: May 18, 2021
    Assignees: SKC INC., SKC CO., LTD.
    Inventors: Daeyong Shin, Yongdeuk Kim, Jung Kyu Lee, Jaehyong Son, Eugene Jung
  • Patent number: 11001039
    Abstract: A resin film for laminated glass, laminated glass including the resin film, and a process for manufacturing the laminated glass are disclosed. The resin film for laminated glass comprises a resin layer comprising a polyvinyl acetal resin and a contact surface in direct contact with glass, wherein the contact surface has an Rz roughness of 25 to 90 ?m and a maximum static friction coefficient at 20° C. of 0.85 to 1.60, and the compressive elastic deformation index measured in the perpendicular direction from the contact surface at 35° C. is 40 to 310 ?m/N.
    Type: Grant
    Filed: November 26, 2019
    Date of Patent: May 11, 2021
    Assignee: SKC CO., LTD.
    Inventors: Kyu-Hun Kim, Jewon Yeon, Sung Jin Chung, Heung Sik Kim, Hyejin Kim, Hak Soo Lee
  • Publication number: 20210129496
    Abstract: A film for glass lamination includes a pigment portion occupying some or a whole of the film, wherein the pigment portion includes a polyvinyl acetal resin, a pigment, a plasticizer, and a trioxane-based compound.
    Type: Application
    Filed: January 8, 2021
    Publication date: May 6, 2021
    Applicant: SKC Co., Ltd.
    Inventors: Hyejin KIM, Jiyeon RYU, Sungjin CHUNG, Heungsik KIM
  • Publication number: 20210129503
    Abstract: A film for laminated glass, the film including a surface embossing pattern formed on at least a portion of one side of the film, wherein the surface embossing pattern comprises convexities, and concavities separating the convexities from one another, each of the convexities is surrounded by some of the concavities, and an average area of the convexities is 0.01 mm2 to 4.00 mm2.
    Type: Application
    Filed: January 5, 2021
    Publication date: May 6, 2021
    Applicant: SKC Co., Ltd.
    Inventors: Haksoo LEE, Sungjin CHUNG
  • Publication number: 20210130599
    Abstract: The method of producing a polyvinyl butyral resin of the present disclosure enable manufacture of a film of which yellow index is low and durability is enhanced, when a film for lamination is manufactured, by advancing acetalization reaction of a polyvinyl alcohol resin and a butanal in the presence of a hydroxy butyric acid.
    Type: Application
    Filed: January 4, 2021
    Publication date: May 6, 2021
    Applicant: SKC Co., Ltd.
    Inventors: Hyejin KIM, Jooyoung JUNG, Jiyeon RYU, Jewon YEON
  • Patent number: 10994880
    Abstract: Embodiments relate to a heat shrinkable film, which has a heat shrinkage rate in the direction perpendicular to the main shrinkage direction that is not high even at a high temperature and which is printable thereon. The heat shrinkable film comprises a polyester resin, wherein the heat shrinkage characteristics in the direction perpendicular to the main shrinkage direction satisfy the following Relationships 1 and 2: ?15??T70?65?0??[Relationship 1] 0??T100?95?5??[Relationship 2] wherein ?TX?Y is a value obtained by subtracting a heat shrinkage rate of the heat shrinkable film in the direction perpendicular to the main shrinkage direction after the heat shrinkable film is immersed in a water bath for 10 seconds at Y° C. from a heat shrinkage rate of the heat shrinkable film in the direction perpendicular to the main shrinkage direction after the heat shrinkable film is immersed in a water bath for 10 seconds at X° C.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: May 4, 2021
    Assignee: SKC CO., LTD.
    Inventors: Chul Kyu Kim, Yongdeuk Kim
  • Publication number: 20210123157
    Abstract: A method for preparing a SiC ingot includes preparing a crucible assembly comprising a crucible body having an internal space, loading a raw material into the internal space of the crucible body and placing a plurality of SiC seed in the internal space of the crucible body at regular intervals spaced apart from the raw material, and growing the SiC ingot from the plurality of SiC seed by adjusting the internal space of the crucible body to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the plurality of SiC seed. A density of the crucible body may be 1.70 to 1.92 g/cm3.
    Type: Application
    Filed: May 22, 2020
    Publication date: April 29, 2021
    Applicant: SKC Co., Ltd.
    Inventors: Jong Hwi PARK, Myung-Ok KYUN, Jongmin SHIM, Eun Su YANG, Byung Kyu JANG, Jung Woo CHOI, Sang Ki KO, Kap-Ryeol KU, Jung-Gyu KIM
  • Publication number: 20210123160
    Abstract: A method for preparing a SiC ingot includes: preparing a reactor by disposing a raw material in a crucible body and disposing a SiC seed in a crucible cover, and then wrapping the crucible body with a heat insulating material having a density of 0.14 to 0.28 g/cc; and growing the SiC ingot from the SiC seed by placing the reactor in a reaction chamber and adjusting an inside of the reactor to a crystal growth atmosphere such that the raw material is vapor-transported and deposited to the SiC seed.
    Type: Application
    Filed: June 30, 2020
    Publication date: April 29, 2021
    Applicant: SKC Co., Ltd.
    Inventors: Jong Hwi PARK, Myung-Ok KYUN, Jongmin SHIM, Byung Kyu JANG, Jung Woo CHOI, Sang Ki KO, Kap-Ryeol KU, Jung-Gyu KIM
  • Publication number: 20210123843
    Abstract: A method for preparing a SiC ingot includes: disposing a raw material and a SiC seed crystal facing each other in a reactor having an internal space; subliming the raw material by controlling a temperature, a pressure, and an atmosphere of the internal space; growing the SiC ingot on the seed crystal; and collecting the SiC ingot after cooling the reactor. The wafer prepared from the ingot, which is prepared from the method, generates cracks when an impact is applied to a surface of the wafer, the impact is applied by an external impact source having mechanical energy, and a minimum value of the mechanical energy is 0.194 J to 0.475 J per unit area (cm2).
    Type: Application
    Filed: June 29, 2020
    Publication date: April 29, 2021
    Applicant: SKC Co., Ltd.
    Inventors: Jong Hwi PARK, Jongmin SHIM, Eun Su YANG, Yeon Sik LEE, Byung Kyu JANG, Jung Woo CHOI, Sang Ki KO, Kap-Ryeol KU, Jung-Gyu KIM
  • Publication number: 20210127462
    Abstract: Example embodiments relate to a method of measurement, an apparatus for measurement, and an ingot growing system that measure properties relating an induction heating characteristic of a graphite article. The method of measurement comprises an arranging step of arranging a graphite article to the coil comprising a winded conducting wire; and a measuring step of applying power for measurement to the coil through means of measurement connected electronically to the coil, and measuring electromagnetic properties induced in the coil. The method of measurement and the like measure electromagnetic properties of graphite articles like an ingot growing container, and an insulating material, and provide data required for selecting so that further enhanced reproducibility for growth of an ingot can be secured.
    Type: Application
    Filed: October 23, 2020
    Publication date: April 29, 2021
    Applicant: SKC Co., Ltd.
    Inventors: Eun Su YANG, Jong Hwi PARK, Jung Woo CHOI, Byung Kyu JANG, Sang Ki KO, Jongmin SHIM, Kap-Ryeol KU, Jung-Gyu KIM
  • Publication number: 20210115587
    Abstract: An adhesive layer of seed crystal includes a graphitized adhesive layer, wherein the graphitized adhesive layer is prepared by heat-treating a pre-carbonized adhesive layer, and wherein the adhesive layer has Vr value of 28%/mm3 or more, and the Vr value is represented by Equation 1 below: Vr ? = { Sq ( V ? 1 - V ? 2 ) } × 1 ? 0 3 [ Equation ? ? 1 ] where Sg (%) is represented by Equation 2 below, V1 is a volume (mm3) of the pre-carbonized adhesive layer, and V2 is a volume (mm3) of the graphitized adhesive layer, Sg ? = { 1 - ( A ? 2 A ? 1 ) } × 1 ? 0 ? 0 ? % [ Equation ? ? 2 ] where A1 is an area (mm2) of the pre-carbonized adhesive layer, and A2 is an area (mm2) of the graphitized adhesive layer.
    Type: Application
    Filed: June 29, 2020
    Publication date: April 22, 2021
    Applicant: SKC Co., Ltd.
    Inventors: Jong Hwi PARK, Jongmin SHIM, Eun Su YANG, Byung Kyu JANG, Jung Woo CHOI, Sang Ki KO, Kap-Ryeol KU, Jung-Gyu KIM
  • Publication number: 20210115592
    Abstract: A SiC ingot includes: a main body including a first cross-sectional plane of the main body and a second cross-sectional plane of the main body facing the first cross-sectional plane; and a protrusion disposed on the second cross-sectional plane and including a convex surface from the second cross-sectional plane of the main body, wherein a first end point disposed at one end of the second cross sectional plane, a second end point disposed at another end of the second cross sectional plane, and a peak point disposed on the convex surface are disposed on a third cross-sectional plane of the main body perpendicular to the first cross-sectional plane, and wherein a radius of curvature of an arc corresponding to a line of intersection between the third cross-sectional plane and the convex surface satisfies Equation 1 below: 3D?r?37D??[Equation 1] where r is the radius of curvature of the arc corresponding to the line of intersection between the third cross-sectional plane and the convex surface, and D is a leng
    Type: Application
    Filed: June 30, 2020
    Publication date: April 22, 2021
    Applicant: SKC Co., Ltd.
    Inventors: Jong Hwi PARK, Myung-Ok KYUN, Jongmin SHIM, Byung Kyu JANG, Jung Woo CHOI, Sang Ki KO, Kap-Ryeol KU, Jung-Gyu KIM
  • Patent number: 10968309
    Abstract: Embodiments relate to a polymerizable composition for a plastic lens. The polymerizable composition for a plastic lens according to the embodiment further comprises a diketone compound for the purpose of controlling the strong activity of a halogenated tin-based catalyst. Further, the polymerizable composition is preliminarily polymerized at a low temperature of 5 to 20° C. for a certain period of time, specifically 1 to 20 hours. Since it is possible to stabilize the reaction rate of the composition and to properly control the viscosity of the composition, a more stable pot life is attained, thereby improving the workability. In addition, the generation of bubbles is prevented, thereby improving the transparency of the resin. Hence, the polymerizable composition can be advantageously used for fabricating various plastic lenses such as eyeglass lenses, camera lenses, and the like.
    Type: Grant
    Filed: October 16, 2018
    Date of Patent: April 6, 2021
    Assignee: SKC CO., LTD.
    Inventors: Seung Mo Hong, Jung Hwan Myung, Junghwan Shin
  • Patent number: 10968390
    Abstract: Provided are a composition for a semiconductor process, which comprises a first component comprising an inorganic acid or an organic acid; and a second component comprising a silicon compound represented by Formula 1, and a semiconductor process, which comprises selectively cleaning and/or removing an organic substance or an inorganic substance using the composition.
    Type: Grant
    Filed: March 5, 2019
    Date of Patent: April 6, 2021
    Assignee: SKC CO., LTD.
    Inventors: Byoungsoo Kim, Gyu An Jin, Jun Rok Oh
  • Publication number: 20210094144
    Abstract: A polishing pad includes a polyurethane, wherein the polyurethane includes a fluorinated repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is 40 or less; wherein R11 and R12 are each independently selected from the group consisting of hydrogen, C1-C10 alkyl groups, and fluorine, with the proviso that at least one of R11 and R12 is fluorine, L is a C1-C5 alkylene group or —O—, R13 and R14 are each independently selected from the group consisting of hydrogen, C1-C10 alkyl groups, and fluorine, with the proviso that at least one of R13 and R14 is fluorine, and n and m are each independently an integer from 0 to 20, with the proviso that n and m are not simultaneously 0.
    Type: Application
    Filed: September 26, 2019
    Publication date: April 1, 2021
    Applicant: SKC Co., Ltd.
    Inventors: Jaein AHN, Jang Won SEO, Jong Wook YUN, Sunghoon YUN, Hye Young HEO, Su Young MOON
  • Publication number: 20210094143
    Abstract: A polishing pad includes a polyurethane, wherein the polyurethane includes in its main chain a silane repeating unit represented by Formula 1, wherein the number of defects on a substrate after polishing with the polishing pad and a fumed silica slurry is about 40 or less wherein R11 and R12 are each independently hydrogen or C1-C10 alkyl groups, and n is an integer from 1 to 30.
    Type: Application
    Filed: September 26, 2019
    Publication date: April 1, 2021
    Applicant: SKC Co., Ltd.
    Inventors: Jaein AHN, Jang Won SEO, Jong Wook YUN, Sunghoon YUN, Hye Young HEO, Su Young MOON
  • Publication number: 20210078302
    Abstract: A film for laminating glass includes a first surface layer, a second surface layer opposite the first surface layer, and an interlayer disposed between the first surface layer and the second surface layer, wherein the interlayer includes a trioxane-based compound.
    Type: Application
    Filed: November 30, 2020
    Publication date: March 18, 2021
    Applicant: SKC Co., Ltd.
    Inventors: Hyejin KIM, Kyuhun KIM, Haksoo LEE
  • Publication number: 20210078292
    Abstract: A film for laminating glass includes a polyvinyl acetal, a plasticizer, inorganic particles, and a trioxane-based compound.
    Type: Application
    Filed: November 30, 2020
    Publication date: March 18, 2021
    Applicant: SKC Co., Ltd.
    Inventors: Hyejin KIM, Jiyeon RYU, Kyuhun KIM, Sungjin CHUNG
  • Patent number: 10940670
    Abstract: A method of preparing an aerogel composite, which includes a wetting pretreatment step for suppressing the generation of air bubbles in a fibrous material such as a mat, and a step of impregnating the fibrous material with a precursor by injecting the precursor in a vessel under a reduced pressure. The method provides a high quality, high insulation aerogel-impregnated composite without air bubbles.
    Type: Grant
    Filed: February 3, 2017
    Date of Patent: March 9, 2021
    Assignee: SKC CO., LTD.
    Inventor: Hyun-Chol Kim