Abstract: A high holding voltage (HV) electrostatic discharge (ESD) protection circuit comprises a silicon controlled rectifier (SCR) device and compensation regions located within the length between the anode and cathode (LAC) of the SCR device which increase the holding voltage of the SCR device. The compensation regions may introduce negative feedback mechanisms into the SCR device which may influence the loop gain of the SCR and cause it to reach regenerative feedback at a higher holding voltage.

Abstract: A high holding voltage (HV) electrostatic discharge (ESD) protection circuit comprises a silicon controlled rectifier (SCR) device and compensation regions located within the length between the anode and cathode (LAC) of the SCR device which increase the holding voltage of the SCR device. The compensation regions may introduce negative feedback mechanisms into the SCR device which may influence the loop gain of the SCR and cause it to reach regenerative feedback at a higher holding voltage.

Abstract: The present invention provides an ESD protection device having at least one diode in a well of first conductivity type formed in a substrate of second conductivity type. The circuit further includes a guard-band of the first conductivity surrounding at least a portion of the diode, thus forming an NPN transistor between the diode cathode, the substrate and the guard-band.

Abstract: An electrostatic discharge (ESD) protection device is disclosed. The ESD protection circuit is configured to operate in high voltage domains. The ESD protection device may further include stacked NMOS or PMOS devices. The gates of the MOS devices may be driven by respective inverters. The inverters may be coupled to a voltage divider and may be triggered by respective trigger circuits. Power nodes of the inverters may be connected such that devices in the ESD protection circuit are exposed to voltages that are within their maximum voltage rating.

Abstract: An electrostatic discharge (ESD) protection device is disclosed including at least an NPN transistor and a PNP transistor coupled between a first node and a second node, wherein the ESD protection device may be configured to sink current from the first node to the second node in response to an ESD event. The transistors may be coupled such that a collector of the NPN may be coupled to the first node. A collector of the PNP may be coupled to the second node. A base of the NPN may be coupled to the emitter of the PNP. An emitter of the NPN may be coupled to a base of the PNP.

Abstract: An electrostatic discharge (ESD) protection circuit is disclosed including at least a clamping device, a switching device, and a voltage limiter. The ESD protection circuit may include devices of different voltage domains. The switching device may be in series with the clamping device to block at least a portion of a voltage from dropping across the clamping device. The switching device may sustain higher maximum operating voltages than the clamping device.

Abstract: An electrostatic discharge (ESD) protection circuit for protecting an integrated circuit (IC) having a first voltage potential, a first power supply potential and a second power supply potential. The ESD circuit includes a first NPN bipolar transistor having a first N-doped junction, a second N-doped junction and a third P-doped base junction. The first N-doped junction is coupled to the first voltage potential and the second N-doped junction is coupled to the first power supply potential. The ESD circuit also includes a first PNP bipolar transistor having a first P-doped junction, a second P-doped junction and a third N-doped base junction. The first P-doped junction is coupled to the first voltage potential and the second P-doped junction is coupled to the second power supply potential. The third P-doped base junction of the first NPN bipolar transistor is coupled to the third N-doped base junction of the first PNP bipolar transistor.

Abstract: An ESD protection circuit including an SCR having at least one PNP transistor and at least one NPN transistor such that at least one of the PNP transistor and the NPN transistor having an additional second collector. The circuit further including at least one control circuit coupled to the at least one second collector to control holding voltage of the SCR.

Abstract: The present invention provides an ESD protection device having at least one diode in a well of first conductivity type formed in a substrate of second conductivity type. The circuit further includes a guard-band of the first conductivity surrounding at least a portion of the diode, thus forming an NPN transistor between the diode cathode, the substrate and the guard-band.

Abstract: The present invention provides an ESD protection device having at least one diode in a well of a first conductivity type formed in a substrate of a second conductivity type. The circuit further includes a guard-band of the first conductivity surrounding at least a portion of the diode, thus forming an NPN transistor between the diode cathode, the substrate and the guard-band.

Abstract: The present invention provides an electrostatic discharge (ESD) protection circuit with a silicon controlled rectifier (SCR) having a plurality of SCR fingers (SCRs) with the advantages to couple the different fingers or SCRs to decrease the multi-triggering problem and to increase the ESD-performance of the circuit. Additionally, a boost circuit can be introduced or additionally multiple SCRs can be coupled inherent through a common base.

Abstract: A high holding voltage (HV) electrostatic discharge (ESD) protection circuit comprises a silicon controlled rectifier (SCR) device and compensation regions located within the length between the anode and cathode (LAC) of the SCR device which increase the holding voltage of the SCR device. The compensation regions may introduce negative feedback mechanisms into the SCR device which may influence the loop gain of the SCR and cause it to reach regenerative feedback at a higher holding voltage.

Abstract: An ESD protection circuit including an SCR having at least a PNP transistor and at least a NPN transistor such that said PNP transistor is coupled to an anode and the NPN transistor is coupled to a cathode. The circuit also includes a first resistor coupled between the anode and the base of the pnp transistor and a second resistor coupled between the cathode and the base of the npn transistor. A parasitic distributed bipolar transistor is formed between said first and second transistor to control triggering of the SCR.

Abstract: The present invention provides an ESD device to reduce the total triggering current without increasing the overshoot voltage. This is achieved by localizing the triggering current, such that the local current density remains high enough to trigger the ESD device. This localized triggering provides a fast and efficient triggering of the ESD device.

Abstract: An electronic device having an LV-well element trigger structure that reduces the effective snapback trigger voltage in MOS drivers or ESD protection devices. A reduced triggering voltage facilitates multi-finger turn-on and thus uniform current flow and/or helps to avoid competitive triggering issues.

Abstract: The present invention provides an ESD protection circuitry in a semiconductor integrated circuit (IC) having protected circuitry to prevent false triggering of the ESD clamp. The circuitry includes an SCR as an ESD clamp having an anode adapted for coupling to a first voltage source, and a cathode adapted for coupling to a second voltage source. The circuitry also includes at least one noise current buffer (NCB) coupled between at least one of a first trigger tap of the SCR and the first voltage source such that the first trigger tap of the SCR is coupled to a power supply.

Abstract: An electrostatic discharge (ESD) protection circuit in a semiconductor integrated circuit (IC) having protected circuitry. In one embodiment, the ESD protection circuit includes a pad adapted for connection to a first voltage source of a protected circuit node of the IC, and a silicon controlled rectifier (SCR) having an anode adapted for coupling to the first voltage source, and a cathode adapted for coupling to a second voltage source. At least one capacitive turn-on device respectively coupled between at least one of a first gate of the SCR and the first voltage source, and a second gate of the SCR and the second voltage source.