Abstract: In a thermal processing unit, a substrate is held by a local transport hand to be transported between a transfer section and a heating unit, and subjected to a heat processing by the heating unit. Also, the local transport hand is cooled by a cooling plate in the transfer section.

Abstract: Systems, devices and methods of measuring a flow of a liquid stream for a semiconductor process are provided. The liquid stream is delivered through a liquid delivery nozzle. The nozzle is adapted to deliver the liquid stream for the semiconductor process. The free stream extends from an upstream location near the nozzle to a downstream location. The stream is marked at the upstream location and measured at the downstream location to determine the flow.

Abstract: After a substrate is cleaned, a liquid supply nozzle moves outward from above the center of the substrate while discharging a rinse liquid with the substrate rotated. In this case, a drying region where no rinse liquid exists expands on the substrate. When the liquid supply nozzle moves to above a peripheral portion of the substrate, the rotational speed of the substrate is reduced. The movement speed of the liquid supply nozzle is maintained as it is. Thereafter, the discharge of the rinse liquid is stopped while the liquid supply nozzle moves outward from the substrate. Thus, the drying region spreads over the whole substrate so that the substrate is dried.

Abstract: After a development liquid on a substrate is washed away with a rinse liquid, the rotational speed of the substrate is reduced, so that a liquid layer of the rinse liquid is formed over a top surface of the substrate. Thereafter, the rotational speed of the substrate is increased. The increase in the rotational speed of the substrate causes a centrifugal force to be slightly greater than tension, thereby causing the liquid layer to be held on the substrate with the thickness thereof in its peripheral portion increased and the thickness thereof at the center thereof decreased. Then, gas is discharged toward the center of the liquid layer from a gas supply nozzle, so that a hole is formed at the center of the liquid layer. This causes tension that is balanced with a centrifugal force exerted on the peripheral portion of the liquid layer to disappear. Furthermore, the rotational speed of the substrate is further increased while the gas is discharged. Thus, the liquid layer moves outward from the substrate.

Abstract: After a substrate is cleaned, a liquid layer of a rinse liquid is formed so as to cover one surface of the substrate. Then, a liquid supply nozzle moves outward from above the center of the substrate. The liquid supply nozzle is stopped once at the time point where it moves by a predetermined distance from above the center of the substrate. In this time period, the liquid layer is divided within a thin layer region by a centrifugal force, so that a drying core is formed at the center of the liquid layer. Thereafter, the liquid supply nozzle moves outward again, so that a drying region where no rinse liquid exists expands on the substrate with the drying core as its starting point.

Abstract: A cleaning processing part including an edge cleaning processing unit for cleaning an edge of a substrate is provided in an indexer block. An indexer robot provided in the indexer block transports an unprocessed substrate taken out of a cassette to the cleaning processing part before transporting the unprocessed substrate to an anti-reflection film processing block serving as a processor. The cleaning processing part cleans an edge and a back surface of a substrate.

Abstract: The temperature of a wafer is measured using thermal sensors that are embedded in elastomeric diaphragms positioned in holes formed in a support layer of a bake plate. A pressure differential caused by heating the bake plate causes the elastomeric diaphragms to contact the wafer. The thermal sensors determine the temperature of the wafer at the locations where the elastomeric diaphragms contact the wafer.

Abstract: A method of operating a bake plate disposed in a semiconductor processing chamber having a face plate opposing the bake plate includes providing a temperature control signal to the bake plate and measuring a face plate temperature associated with the face plate. The method also includes determining a difference between the face plate temperature and a predetermined temperature and modifying the temperature control signal provided to the bake plate in response to the determined difference.

Abstract: A chilled arm that transports a substrate to and from a heating plate for performing a heating process on the substrate is formed with a flow passage pipe therein, and cools the entire holding area thereof opposed to the substrate held by the chilled arm to a predetermined reference temperature by supplying circulating cooling water through the flow passage pipe. Six polyimide heaters are affixed to the holding area to control the temperature of at least a portion of the holding area at a temperature different from the reference temperature. These two temperature control mechanisms intentionally provide a temperature distribution to the holding area to thereby provide an intentional temperature distribution to the substrate before and after the heat treatment by the heating plate. This reduces the nonuniformity of a temperature distribution which typically occurs in the heating plate to accomplish a uniform heat treatment throughout the heat treatment process step.

Abstract: A substrate processing apparatus comprises an indexer block, an anti-reflection film processing block, a resist film processing block, a drying/development processing block, and an interface block. An exposure device is arranged adjacent to the interface block. The drying/development processing block comprises a drying processing group. The interface block comprises an interface transport mechanism. A substrate is subjected to exposure processing by the exposure device, and subsequently transported to the drying processing group by the interface transport mechanism. The substrate is cleaned and dried by the drying processing group.

Abstract: A system for measuring substrate concentricity includes a substrate support member adapted to rotate a substrate around a substantially vertical axis. The substrate includes a mounting surface and a process surface. The system also includes a spin cup positioned below the substrate and a translatable arm mounted a predetermined distance above the process surface of the substrate. The translatable arm is adapted to translate along a radius of the substrate. The system further includes an optical emitter mounted on the translatable arm and an optical detector mounted on the translatable arm.

Abstract: An apparatus and method for measuring a height of an object above a surface includes a housing with a first portion having an upper surface and a lower surface and an extension portion extending a first distance from the lower surface of the first portion. The extension portion defines a cavity opposing the lower surface of the first portion. The apparatus further includes one or more actuators passing through the lower surface of the first portion of the housing and extending into the cavity. Additionally, the apparatus includes a plate supported by one or more flexible members coupled to the extension portion. The plate has a top surface and a bottom surface that lies in a plane substantially parallel to the surface. Moreover, the apparatus includes a plurality of sensors disposed at predetermined positions of the plate. Each of the plurality of sensors is responsive to a height measured between each of the plurality of sensors and the surface.

Abstract: A substrate heater comprising a bake plate having an upper surface, a lower surface and a peripheral side surface extending between the upper and lower surfaces, the bake plate including at least one heating element, at least one temperature sensor and a plurality of wires including at least one wire coupled to the heating element and at least one wire coupled to the temperature sensor; a shield spaced apart from and generally surrounding the lower and peripheral side surfaces of the bake plate, the shield having an interior upper surface facing the lower surface of the bake plate, an interior side surface facing the peripheral side surface of the bake plate and a lower surface opposite the interior upper surface; a patterned signal layer formed on the lower surface of the shield, wherein the plurality of wires are electrically coupled to a corresponding plurality of signal traces formed in the patterned signal layer; and a connector, electrically coupled to the plurality of signal traces in the patterned sig

Abstract: A cleaning processing unit includes a spin chuck for horizontally holding a substrate and rotating the substrate around the vertical axis passing through the center of the substrate. A bevel cleaner is disposed outside the spin chuck. The bevel cleaner includes a cleaning brush. The cleaning brush has a shape that is symmetric about its vertical axis, and has an upper bevel cleaning surface, an end surface cleaning surface, and a lower bevel cleaning surface. The end surface cleaning surface is a cylindrical surface having its axis in the vertical direction. The upper bevel cleaning surface extends out from and is inclined upward from the upper end of the end surface cleaning surface, and the lower bevel cleaning surface extends out from and is inclined downward from the lower end of the end surface cleaning surface.

Abstract: A substrate processing apparatus includes an indexer block, an anti-reflection film processing block, a resist film processing block, a development processing block, a resist cover film processing block, a resist cover film removal block, and an interface block. The interface block includes a bevel portion inspection unit. The bevel portion inspection unit inspects a bevel portion of a substrate to determine whether or not the bevel portion of the substrate is contaminated. The substrate whose bevel portion is determined to be contaminated and the substrate whose bevel portion is determined that it is not contaminated are respectively subjected to different types of processing.

Abstract: A system for dispensing an adhesion promoting chemical includes a support plate configured to support a substrate and a dispense nozzle in fluid communication with a source of the adhesion promoting chemical, for example, HMDS. The dispense nozzle is positioned adjacent a peripheral portion of the substrate and at a first radial distance. The system also includes an exhaust aperture in fluid communication with a system exhaust. The exhaust aperture is positioned adjacent to dispense nozzle and at a second radial distance greater than the first radial distance.

Abstract: A substrate processing apparatus includes a development part for performing a development process on a substrate after being subjected to exposure and a cleaning part. When the processing time in the development part is shorter than the reference time determined in advance, the development part performs all the process steps for development. On the other hand, when the processing time in the development part is longer than the reference time, the development process is split into a first half process step and a second half process step, and the development part performs a processing including the first half process step and the cleaning part performs a processing including the second half process step. Even if the development process takes a long time, it is possible to prevent deterioration in processing capability of the substrate processing apparatus on the whole by splitting the development process.

Abstract: A bake station includes a bake plate having a thickness defined by a distance between an upper surface and a lower surface of the bake plate. The bake plate is configured to heat a substrate positioned adjacent the upper surface of the bake plate. The bake station also includes a base plate having a first surface positioned below and opposing the lower surface of the bake plate and a side plate extending between the lower surface of the bake plate and the first surface of the base plate. The side plate, the lower surface of the bake plate, and the first surface of the base plate define a space. The bake station further includes a plurality of nozzles coupled to the base plate. Each of the plurality of nozzles has an inlet configured to receive an input flow of fluid and an exit port configured to expel an exit flow of fluid onto the lower surface of the bake plate.

Abstract: A substrate treating apparatus includes a plurality of substrate treatment lines arranged vertically. Each substrate treatment line has a plurality of main transport mechanisms arranged horizontally, and a plurality of treating units provided for each main transport mechanism for treating substrates. A series of treatments is carried out for the substrates, with each main transport mechanism transporting the substrates to the treating units associated therewith, and transferring the substrates to the other main transport mechanism horizontally adjacent thereto. The substrate treating apparatus realizes increased processing capabilities by treating the substrates in parallel through the substrate treatment lines.

Abstract: An apparatus for dispensing fluid during semiconductor substrate processing operations. The apparatus includes a central fluid dispense bank comprising a plurality of dispense nozzles coupled to a plurality of fluid sources and a first processing chamber positioned to a first side of the central fluid dispense bank. The apparatus also includes a second processing chamber positioned to a second side of the central fluid dispense bank and a dispense arm adapted to translate between the central fluid dispense bank, the first processing chamber, and the second processing chamber.