Abstract: A monitor device includes a substrate and a plurality of temperature sensors disposed in the substrate. The monitor device also includes a processor coupled to the substrate and adapted to receive one or more signals from the plurality of temperature sensors. The processor is further adapted to convert the one or more received signals into one or more converted signals. The monitor device further includes a transceiver coupled to the substrate and adapted to receive the one or more converted signals. The transceiver is further adapted to transmit one or more output signals to an external receiver.

Abstract: A first thermometry system for measuring a temperature of an object under test includes a first detecting sheet having crystal oscillators arranged on a first sheet-like object formed of resin, and a first measuring device for measuring the temperature based on frequencies acquired from the crystal oscillators and corresponding to natural frequencies of the crystal oscillators. In this system, the first detecting sheet is placed in contact with the object under test, whereupon the crystal oscillators provide the natural frequencies corresponding to the temperature of the object under test. The first measuring device measures the temperature of the object under test accurately based on the frequencies corresponding to the natural frequencies.

Abstract: A device for measuring a temperature of a semiconductor wafer comprises a structure adapted to support the semiconductor wafer. The structure has an upper end and a lower end. The upper end contacts the wafer. A photoluminescent material is adapted to emit an emission light energy in response to the temperature of the wafer. A light source is adapted to emit an excitation light energy. The light source is optically coupled to the photoluminescent material. A detector is adapted to measure the emission light energy emitted from the photoluminescent material so as to determine the temperature of the wafer. In specific embodiments, the photoluminescent material may be positioned near the upper end of the structure to measure the temperature of the wafer while the wafer is supported with the structure. The structure may comprise a proximity pin and an optically transparent material.

Abstract: A method of reducing a temperature of a bake plate within a semiconductor processing tool includes (a) providing a substrate and (b) transferring the substrate to a position adjacent the bake plate. The bake plate is characterized by an initial bake plate temperature greater than a set point temperature. The method also includes (c) reducing the temperature of the bake plate by a first predetermined amount and (d) transferring the substrate from the position adjacent the bake plate to a position adjacent a chill plate. The chill plate is characterized by a chill plate temperature less than the set point temperature.

Abstract: A substrate heater comprising a bake plate having an upper surface, a lower surface and a peripheral side surface extending between the upper and lower surfaces, the bake plate including at least one heating element, at least one temperature sensor and a plurality of wires including at least one wire coupled to the heating element and at least one wire coupled to the temperature sensor; a shield spaced apart from and generally surrounding the lower and peripheral side surfaces of the bake plate, the shield having an interior upper surface facing the lower surface of the bake plate, an interior side surface facing the peripheral side surface of the bake plate and a lower surface opposite the interior upper surface; a patterned signal layer formed on the lower surface of the shield, wherein the plurality of wires are electrically coupled to a corresponding plurality of signal traces formed in the patterned signal layer; and a connector, electrically coupled to the plurality of signal traces in the patterned sig

Abstract: A substrate processing apparatus includes an anti-reflection film processing block, a resist film processing block, and a resist cover film processing block. In the processing blocks, an anti-reflection film, a resist film, and a resist cover film are formed on a substrate, respectively. Additionally, a film formed at a peripheral edge of the substrate is removed. The film formed at the peripheral edge of the substrate is removed by supplying a removal liquid capable of dissolving and removing the film to the peripheral edge of the substrate during rotation. When the peripheral edge of the film is removed, the position of the substrate is corrected such that the center of the substrate coincides with the center of a rotation shaft.

Abstract: A device for heating a semiconductor wafer comprises a heating element arranged to conduct heat toward the wafer. The heating element can extend along a heating element path. An RTD sensor loop can extend along an RTD sensor path. The RTD sensor path can be positioned along the heating element path to measure a temperature that corresponds to the heating element. The RTD sensor loop can measure an average temperature along the heating element. Portions of the RTD sensor can be interlaced between portions of the heating element. The heating element path can be arranged with interstices between portions of the heating element path, and portions of the RTD sensor path can be positioned within the interstices to interlace the RTD sensor loop with the heating element. The RTD sensor loop can comprise a soft metal that is resistant to oxidation and extends along the RTD sensor path.

Abstract: A cluster tool for processing a substrate includes a cassette and a processing module including a first process chamber that is configured to perform a chill process on a substrate, a second processing chamber that is configured to perform a bake process on the substrate, and an input chamber. The first processing chamber, the second processing chamber, and the input chamber are substantially adjacent to each other. The processing modules also includes a robot that is configured to receive the substrate in the input chamber and transfer and position the substrate in the first processing chamber and second processing chamber. The robot includes a robot blade, an actuator, and a heat exchanging device. The heat exchanging device includes a chilled transfer assembly. The cluster tool also includes a 6-axis articulated robot configured to transfer the substrate between the cassette and the input chamber.

Abstract: A substrate processing apparatus is arranged adjacent to an exposure device and includes a processing section, a transfer section configured to carry the substrate into and out of the processing section, and an interface configured to receive and transfer the substrate between the processing section and the exposure device. The processing section includes a first processing unit having a photosensitive film formation region, a thermal processing region having a first thermal processing unit, and a first transport region having a first transport unit. The photosensitive film formation region is arranged opposite the thermal processing region with the first transport region interposed therebetween. The processing section also includes a second processing unit having a first development region, a second development region, and a second transport region having a second transport unit.

Abstract: A method for developing a substrate includes a developing step for supplying a developer to the substrate, and a neutralizing and removing step for supplying a treating solution containing a neutralizing material to the substrate to neutralize the developer, and neutralizing the developer and removing the developer from the substrate. In the neutralizing and removing step, the developer is neutralized by the treating solution. This neutralization reaction forms a product (salt) which easily melts into the treating solution and does not precipitate. Thus, the product is removable from the substrate along with the treating solution. Therefore, the developer is inhibited from remaining on the substrate. As a result, it is possible to prevent post-develop defects due to “residues of the developer” or the developer remaining on the substrate.

Abstract: A substrate processing apparatus arranged adjacent to an exposure device includes a processing section that subjects a substrate to processing and an interface provided adjacent to one end of the processing section configured to transfer and receive the substrate between the processing section and the exposure device. The processing section includes a photosensitive film formation unit configured to form a photosensitive film composed of a photosensitive material on the substrate that has not been subjected to exposure processing by the exposure device, a top surface and edge cleaning unit configured to clean a top surface and an edge of the substrate, and a development unit configured to subject the substrate to development processing after the exposure processing by the exposure device.

Abstract: A substrate processing apparatus that is arranged adjacent to an exposure device includes a processing section including a first processing unit and a second processing unit. The first processing unit includes a development region, a first cleaning region, and a first transport region. The development region and the first cleaning region are arranged opposite to each other with the first transport region interposed therebetween. The second processing unit includes a reversing region, a second cleaning region, and a second transport region. The reversing region and the second cleaning region are arranged opposite to each other with the second transport region interposed therebetween. The second processing unit is arranged between the first processing unit and the exposure device. The substrate processing apparatus also includes a transfer section coupled to the processing section and an interface configured to receive and transfer the substrate between the processing section and the exposure device.

Abstract: In a substrate processing apparatus, an indexer block, a resist film processing block, a cleaning/drying processing block, a development processing block, and an interface block are provided side by side in this order. An exposure device is arranged adjacent to the interface block. The exposure device subjects a substrate to exposure processing by means of a liquid immersion method. Substrate platforms are provided in close proximity one above the other between the cleaning/drying processing block and the development processing block for receiving and transferring the substrate therebetween. Reversing units that reverse one surface and the other surface of the substrate are respectively stacked above and below the substrate platforms.

Abstract: A system for measuring substrate concentricity includes a substrate support member adapted to rotate a substrate around a substantially vertical axis. The substrate includes a mounting surface and a process surface. The system also includes a spin cup positioned below the substrate and a translatable arm mounted a predetermined distance above the process surface of the substrate. The translatable arm is adapted to translate along a radius of the substrate. The system further includes an optical emitter mounted on the translatable arm and an optical detector mounted on the translatable arm.

Abstract: An apparatus for dispensing fluid during semiconductor substrate processing operations. The apparatus includes a central fluid dispense bank comprising a plurality of dispense nozzles coupled to a plurality of fluid sources and a first processing chamber positioned to a first side of the central fluid dispense bank. The apparatus also includes a second processing chamber positioned to a second side of the central fluid dispense bank and a dispense arm adapted to translate between the central fluid dispense bank, the first processing chamber, and the second processing chamber.

Abstract: A thermal processing module for a track lithography tool includes a bake plate comprising a process surface and a lower surface opposing the process surface. The thermal processing module also includes a plurality of electrodes coupled to the bake plate Each of the plurality of electrodes is adapted to receive a drive signal. The thermal processing module further includes a plurality of proximity pins coupled to the process surface and extending to a predetermined height from the process surface, a plurality of flexible members coupled to the lower surface of the bake plate, a chill plate coupled to the plurality of flexible members and defining a plurality of chambers, and a plurality of channels. Each of the plurality of channels is in fluid communication with one of the plurality of chambers and with one or more sources of a pressurized fluid.

Abstract: A method of performing a thermal process using a bake plate of a track lithography tool. The bake plate includes a plurality of heater zones. The method includes providing a first drive signal to a first electrode in electrical communication with a process surface of the bake plate. The first electrode is associated with a first heater zone of the plurality of heater zones and each of the plurality of heater zones is adapted to receive a control voltage. The method also includes moving a semiconductor substrate toward the process surface of the bake plate, receiving a first response signal from the first electrode, processing the first response signal to determine a first capacitance value associated with a first gap between the first electrode and a first portion of the semiconductor substrate, and providing a measurement signal related to the first capacitance value.

Abstract: A substrate transport module adapted to transport a substrate in a processing chamber of a semiconductor processing apparatus. The substrate transport module includes a substrate cooling surface and a plurality of coolant channels disposed in the substrate transport module and in thermal communication with the substrate cooling surface. The substrate transport module also includes a plurality of vacuum channels disposed in the substrate transport module and a plurality of proximity pins extending to a predetermined height above the substrate cooling surface. Each of the plurality of proximity pins is in fluid communication with one or more of the plurality of vacuum channels.

Abstract: A substrate for temperature measurement has seventeen temperature measuring elements mounted thereto and each having a built-in quartz resonator. Each of the temperature measuring elements is connected to one coaxial cable covered with fluorocarbon resin having excellent heat resistance. The seventeen cables are bonded to the substrate for temperature measurement using an adhesive so that all the paths of the cables from their contacts with the temperature measuring elements to their boundary points to the outside of the substrate run on the upper surface of the substrate for temperature measurement, and that they are made to have a substantially equal length from their contacts to their boundary points. This minimizes and makes uniform thermal disturbances given to each of the temperature measuring elements from the cables, thus enabling high-precision substrate temperature measurement.

Abstract: A method of detecting developer endpoint. The method includes illuminating a device region of a substrate with a first optical beam prior to initiating a development stage of processing and detecting a baseline optical signal reflected from the device region of the substrate. The method also includes illuminating the device region of the substrate with a second optical beam during a development stage of processing and detecting an endpoint optical signal reflected from the device region of the substrate. The method further includes comparing the baseline optical signal to the endpoint optical signal and determining a developer endpoint based on the comparing step.