Abstract: The present disclosure generally pertains to time-of-flight demodulation circuitry configured to: determine a light event pattern with an event-based light detection element of a plurality of event-based light detection elements; and determine, for a demodulation element of a plurality of demodulation elements, a timing for a demodulation signal to be applied to the demodulation element based on the light event pattern, wherein the demodulation element is associated with the event-based light detection element.

Abstract: Embodiments of the present disclosure provide a dynamic vision sensor, a method, and a noise filtering circuit for a dynamic vision sensor (DVS). The noise filtering circuit is configured to receive a first request signal in response to a first event detected by one of a group of pixels of the DVS. Also, the noise filtering circuit is configured to trigger a timeframe in response to receiving the first request signal. Further, the noise filtering circuit is configured to receive a second request signal in response to a subsequent second event detected by one of the group of pixels. Also, the noise filtering circuit is configured to forward the second request signal to an arbitration logic if the second event is detected within the timeframe, and to block the second request signal from being forwarded to the arbitration logic if the second event is detected outside the timeframe.

Abstract: The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.

Abstract: The present disclosure relates to a solid-state imaging element and an electronic apparatus that can achieve a higher image quality. The imaging element includes a pixel having a global drive portion in which all rows are driven at a same timing and a rolling drive portion in which each row is driven at a corresponding timing, a pixel array region in which a plurality of the pixels is placed in an array, a global drive circuit configured to supply a drive signal to the global drive portion, and a rolling drive circuit configured to supply a drive signal to the rolling drive portion. Further, the global drive circuit is placed on each of at least three or more sides of four sides surrounding the pixel array region. The present technology is applicable to a stacked CMOS image sensor, for example.

Abstract: Provided is a level shifter circuit that changes a voltage of a high-frequency input signal to output. Provided is a level shifter circuit provided with a first input terminal and a second input terminal to each of which an input signal having a level between a first potential level and a first reference potential level is input, a first output terminal and a second output terminal from each of which an output signal having a level between a second potential level higher than the first potential level and a second reference potential level is output, a second potential supply node that supplies a voltage at the second potential level, a reference potential supply node that supplies a voltage at the second reference potential level, first and second impedance elements, first to fourth transistors, and first and second nodes, in which each of the first impedance element and the second impedance element includes at least three terminals.

Abstract: To provide an electric potential measuring device that can further improve evaluation quality.

Abstract: Time deviation between event detection and gradation acquisition is reduced. A solid-state imaging apparatus according to an embodiment includes: a pixel array unit (300) including a plurality of pixel blocks (310) arrayed in a matrix; and a drive circuit (211) that generates a pixel signal in a first pixel block in which firing of an address event has been detected among the plurality of pixel blocks, each of the plurality of pixel blocks including a first photoelectric conversion element (331) that generates an electric charge according to an amount of incident light, a detection unit (400) that detects the firing of the address event based on the electric charge generated in the first photoelectric conversion element, a second photoelectric conversion element (321) that generates an electric charge according to an amount of incident light, and a pixel circuit (322, 323, 324, 325, 326) that generates a pixel signal based on the electric charge generated in the second photoelectric conversion element.

Abstract: A solid-state imaging element including: a photoelectric conversion layer, a first electrode and a second electrode opposed to each other with the photoelectric conversion layer interposed therebetween, a semiconductor layer provided between the first electrode and the photoelectric conversion layer, an accumulation electrode opposed to the photoelectric conversion layer with the semiconductor layer interposed therebetween, an insulating film provided between the accumulation electrode and the semiconductor layer, and a barrier layer provided between the semiconductor layer and the photoelectric conversion layer.

Abstract: An imaging device includes a first substrate including a pixel array and a first multilayer wiring layer. The first multilayer wiring layer includes a first wiring that receives electrical signals based on electric charge generated by at least one photoelectric conversion unit, and a plurality of second wirings. The imaging device includes a second substrate including a second multilayer wiring layer and a logic circuit that processes the electrical signals. The second multilayer wiring layer includes a third wiring bonded to the first wiring, and a plurality of fourth wirings. At least one of the plurality of fourth wirings being bonded to at least one of the plurality of second wirings. The second multilayer wiring layer includes at least one fifth wiring that is connected to the plurality of fourth wirings and that receives a power supply signal.

Abstract: To downsize an imaging element formed by stacking a plurality of semiconductor substrates. The imaging element includes pixels, a pixel circuit, an isolating section, a buried electrode, and a connecting location. Each of the pixels includes: a photoelectric conversion section on the first semiconductor substrate; a charge holding section that holds a charge generated by the photoelectric conversion section; and a charge transfer section. The pixel circuit generates an image signal on the basis of charges disposed and held on a second semiconductor substrate stacked on the front surface side of the first semiconductor substrate. The isolating section is disposed at a boundary of the pixels. The buried electrode is disposed at the boundary of the pixel overlapping the isolating section, so as to be connected to the first semiconductor substrate. The connecting location is connected to the buried electrode.

Abstract: A solid-state imaging device according to an embodiment includes: a plurality of pixels, each of the plurality of pixels including a substrate having a first surface serving as a light incident surface, a photoelectric conversion unit located inside the substrate, a light shielding unit provided on a first surface side, the light shielding unit having a hole portion configured to allow light to be incident on the photoelectric conversion unit, and a first lens made of silicon, the first lens being provided on the light shielding unit and condensing incident light toward the hole portion.

Abstract: The present disclosure provides a semiconductor device capable of suppressing peeling of sealing resin, and an electric device. A semiconductor device according to a first aspect of the present disclosure includes: a substrate; a frame having a wall portion that is annularly arranged on the substrate and has a plurality of projection portions on an upper surface, the frame having a groove portion provided on the upper surface of the wall portion in correspondence to each of the projection portions; a semiconductor chip arranged in a region surrounded by the wall portion on the substrate; and a lid portion arranged on the upper surface of the wall portion and sealing the semiconductor chip.

Abstract: A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.

Abstract: The present disclosure relates to an imaging apparatus and an imaging method, a camera module, and an electronic apparatus that are capable of detecting a failure in an imaging device having a structure in which a plurality of substrates are stacked. The timing at which a row drive unit provided in a second substrate outputs a control signal for controlling accumulation and reading of pixel signals in a pixel array provided in a first substrate is compared with the timing at which the control signal output from the row drive unit is detected after passing through the pixel array. Depending on whether or not the timings coincides with each other, a failure is detected. The present disclosure can be applied to an imaging apparatus mounted on a vehicle.

Abstract: Color image sensors and systems are provided. A color image sensor as disclosed includes a plurality of pixels disposed within an array, each of which includes a plurality of sub-pixels. A pixel array includes pixel cells, each pixel cell including one or more photodiodes. Pixel cells are arranged in rows and columns. The pixel array includes transistors for vertical binning of pixel cells in different rows and transistors for horizontal binning of pixel cells in different columns.

Abstract: A photodetection device is provided which includes a pixel array unit including a plurality of pixels arranged in a matrix on a semiconductor substrate to detect light, in which each of the pixels includes a pixel separation wall that surrounds the pixels and separates the pixels from one another, a photoelectric conversion unit inside the semiconductor substrate to generate an electric charge by light, a multiplication region inside the semiconductor substrate to multiply the electric charge from the photoelectric conversion unit, and first and second reflective portions that reflect light traveling toward outside the semiconductor substrate into the semiconductor substrate, the first reflective portion is provided, on a first surface that receives light of the semiconductor substrate, to protrude from the pixel separation wall toward a pixel center, and the second reflective portion is provided on a second surface of the semiconductor substrate facing the first surface.

Abstract: The present technology provides an image display device capable of preventing a user from feeling glare as much as possible. The image display device according to the present technology includes: an irradiation system that irradiates an eyeball of a user with image light with which an image is formed; and a light amount adjustment system that adjusts a total light amount of the image light to be equal to or lower than a first threshold value regardless of a size of the image. Therefore, it is possible to provide the image display device capable of preventing a user from feeling glare as much as possible.

Abstract: In a semiconductor device provided with a through electrode, thermal stress is reduced. The semiconductor device includes a semiconductor substrate, a wiring layer, a first through hole, and a first inner through electrode. In the semiconductor device, the wiring layer is formed on a front surface of the semiconductor substrate. Furthermore, in the semiconductor device, the first through hole penetrates the semiconductor substrate from a back surface to the front surface of the semiconductor substrate, and has a side wall covered with an insulating film. Furthermore, in the semiconductor device, the first inner through electrode is formed along a part of the side wall of the first through hole.

Abstract: The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.

Abstract: To implement quick and smooth parking assistance close to a human sense without being affected by an environment of a parking space. A 3D semantic segmentation image having a plurality of pixel units, each pixel unit of the plurality of pixel units including the depth data and class information, are generated, an available parking space is searched for on the basis of the 3D semantic segmentation image, and a path to the searched parking space is planned and a vehicle is controlled. The present disclosure can be applied to a parking assistance system.