Abstract: A light emitting device includes a laminated structure having a plurality of columnar parts, wherein the columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer, the third semiconductor layer includes a light emitting layer, and the second semiconductor layer includes a first portion, and a second portion which surrounds the first portion in a plan view from a laminating direction of the first semiconductor layer and the light emitting layer, and is lower in impurity concentration than the first portion.

Abstract: A light emitting device includes a substrate, and a stacked body provided to the substrate, and including a plurality of first columnar parts, wherein the stacked body includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer and the light emitting layer constitute the first columnar parts, the first semiconductor layer is disposed between the substrate and the light emitting layer, the second semiconductor layer is provided with a plurality of recessed parts, the recessed part is provided with a low refractive-index part lower in refractive index than the second semiconductor layer, a plurality of the first columnar parts constitutes a first photonic crystal, the second semiconductor layer and the low refractive-index parts constitute a second photonic crystal, and the first photonic crystal and

Abstract: To provide a volume-type optical element in which a self-cloning photonic crystal is used. An optical element is provided with half-wave plates of photonic crystals formed on the xy plane and laminated in the z-axis direction in a three-dimensional space x, y, z. The groove direction of the photonic crystals is a curved line, and the angle in relation to the y-axis direction changes continuously in the range of 0°-180°. Light entering the optical element in the axial direction is emitted from the optical element upon being divided and converted into clockwise circularly polarized light in the direction facing the x-axis by a given angle from the z-axis and anticlockwise circularly polarized light in the direction facing the ?x-axis by a given angle from the z-axis. Laminating or placing a quarter-wave plate comprising a photonic crystal on one or both surfaces makes it possible to divide light entering from the z-axis direction of the optical element into two orthogonal linearly polarized lights.

Abstract: A method for producing a plant seedling is provided, which is based on microwave radiation in order to efficiently facilitate the plant growth. In the method, microwave radiation is started at any timing during a period ranging from appearance of a first true leaf to a timing provided before appearance of a second true leaf in a growth process of a plant. The radiation time of the microwave may be within 1 hour, and the output of the microwave may be 2 to 25 W per 1 to 20 seedling or seedlings.

Abstract: A light emitting apparatus including a plurality of first light emitters and a plurality of second light emitters that differ from the first light emitters in terms of resonance wavelength, in which the second light emitters are each disposed between each adjacent pair of the first light emitters, first light that resonates in the plurality of first light emitters is in phase, and second light that resonates in the plurality of second light emitters is in phase.

Abstract: A light emitting device has a columnar portion including a light emitting layer, and: (b?a)/L1>(d?c)/L2; a<b; c<d; and a<d, where a is the columnar portion's maximum width as viewed in a laminating direction, at a first position of the columnar portion closest to the substrate in the laminating direction, b is the columnar portion's maximum width, at a second position of the light emitting layer closest to the substrate, c is the columnar portion's maximum width, at a third position of the light emitting layer farthest from the substrate, d is the columnar portion's maximum width, at a fourth position of the columnar portion farthest from the substrate, and L1 is a distance between the first and second positions and L2 is a distance between the third and fourth positions.

Abstract: A light emitting device includes a substrate, and a stacked body provided to the substrate, and including a columnar part aggregate constituted by p columnar parts, wherein the stacked body includes a plurality of the columnar part aggregates, the p columnar parts each have a light emitting layer, a diagram configured by respective centers of the plurality of columnar parts has rotation symmetry when viewed from a stacking direction of the stacked body, a diametrical size of q columnar parts out of the p columnar parts is different from a diametrical size of r columnar parts out of the p columnar parts, a shape of the columnar part aggregate is not rotation symmetry, the p is an integer not less than 2, the q is an integer not less than 1 and less than the p, and the r is an integer satisfying r=p?q.

Abstract: A light-emitting device includes a substrate and a stack provided on the substrate. The stack includes a plurality of columnar portions each of which includes a first columnar portion and a second columnar portion which has a diameter smaller than a diameter of the first columnar portions. Each first columnar portion is provided between the substrate and the second columnar portions, and includes: a first semiconductor layer; a second semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer; and a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer and capable of generating light. The first semiconductor layer is provided between the substrate and the light-emitting layer. Each second columnar portion includes a third semiconductor layer having a conductivity type different from a conductivity type of the first semiconductor layer.

Abstract: A light emitting apparatus including a plurality of first light emitters and a plurality of second light emitters that differ from the first light emitters in terms of resonance wavelength, in which the second light emitters are each disposed between each adjacent pair of the first light emitters, first light that resonates in the plurality of first light emitters is in phase, and second light that resonates in the plurality of second light emitters is in phase.

Abstract: There is provided a process for preparing a compound represented by the following general formula (1) or a salt thereof, which comprises exchanging one or more of an amino proton in a compound represented by the following general formula (2) or a salt thereof to deuterium, and after the exchanging, converting a deuterium-exchanged compound of the compound represented by the general formula (2) or a salt thereof into the compound represented by the general formula (1) or a salt thereof: wherein, in the general formula (1), one, or two or more of hydrogen atom may be substituted with their isotope; and in the general formula (2), each of R1 is independently hydrogen atom, tert-butyloxycarbonyl group or benzyloxycarbonyl group, and R2 is independently tert-butyl group, benzyl group, methyl group or ethyl group.

Abstract: There is provided a process for preparing a compound represented by the following general formula (1) or a salt thereof, which comprises exchanging one or more of an amino proton in a compound represented by the following general formula (2) or a salt thereof to deuterium, and after the exchanging, converting a deuterium-exchanged compound of the compound represented by the general formula (2) or a salt thereof into the compound represented by the general formula (1) or a salt thereof: wherein, in the general formula (1), one, or two or more of hydrogen atom may be substituted with their isotope; and in the general formula (2), each of R1 is independently hydrogen atom, tert-butyloxycarbonyl group or benzyloxycarbonyl group, and R2 is independently tert-butyl group, benzyl group, methyl group or ethyl group.

Abstract: A method of producing a lithium-ion secondary battery includes the following (?) and (?): (?) preparing a lithium-ion secondary battery, the lithium-ion secondary battery including at least a positive electrode, a negative electrode, and an electrolyte solution; and (?) adding a zwitterionic compound to the electrolyte solution. The negative electrode includes at least a negative electrode active material and a film. The film is formed on a surface of the negative electrode active material. The film contains a lithium compound. The zwitterionic compound contains a phosphonium cation or an ammonium cation and a carboxylate anion in one molecule.

Abstract: [Problem] To provide a method for inducing a long-term memory in a subject in need thereof. [Solution to problem] A method for inducing a long-term memory, comprising a step of administering a compound represented by Formula I below, a pharmaceutically acceptable salt thereof or a solvate thereof to the subject.

Abstract: The invention is an electrolyte composition comprising the following component (A), component (B) and component (C): component (A): an ionic compound having a melting point of 200° C. or lower (except for the following components (B) and (C)), component (B): an ionic compound including a Group 1 or 2 metal ion in the periodic table, and component (C): a zwitterionic compound, and a secondary battery having a positive electrode, a negative electrode, and the electrolyte composition, and a method for using the secondary battery, wherein an upper limit of a cutoff voltage during charging is 4.4 to 5.5 V. One aspect of the invention provides an electrolyte composition excellent in flame retardance and non-volatility, a secondary battery excellent in cycling characteristics and having a high capacity, and a method for using the secondary battery.

Abstract: A method for producing a plant seedling is provided, which is based on microwave radiation in order to efficiently facilitate the plant growth. In the method, microwave radiation is started at any timing during a period ranging from appearance of a first true leaf to a timing provided before appearance of a second true leaf in a growth process of a plant. The radiation time of the microwave may he within 1 hour, and the output of the microwave may be 2 to 25 W per 1 to 20 seedling or seedlings.

Abstract: A group-III nitride structure includes a substrate 102 and a fine wall-shaped structure 110 disposed to stand on the substrate 102 in a vertical direction relative to a surface of the substrate 102 and extending in an in-plane direction of the substrate 102. The fine wall-shaped structure 110 contains a group-III nitride semiconductor crystal, and h is larger than d assuming that the height of the fine wall-shaped structure 110 is h and the width of the fine wall-shaped structure 110 in a direction perpendicular to the height direction and the extending direction is d.

Abstract: A process for preparing a compound represented by the following general formula (I) or a salt thereof, which comprises reacting lysine or a protective product thereof or a salt thereof with allysine or a protective product thereof in the presence of a specific trifluoromethane sulfonate to obtain a compound having pyridine ring or a salt thereof. (wherein, in the above-described general formula (I), one of R1 and R2 is —CH2CH2CH2CH(NH2)COOH group, and the other is hydrogen atom. And wherein, in the above-described general formula (I), one, or two or more of hydrogen atom, one, or two or more of carbon atom, or one, or two or more of nitrogen atom may be substituted with their isotope.

Abstract: A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms, and temperature of crystal growth, so as to suppress crystal growth in the lateral direction on the surface of the substrate.

Abstract: A method of manufacturing a semiconductor element by forming, on a substrate, columnar crystals of a nitride-base or an oxide-base compound semiconductor, and by using the columnar crystals, wherein on the surface of the substrate, the columnar crystals are grown while ensuring anisotropy in the direction of c-axis, by controlling ratio of supply of Group-III atoms and nitrogen, or Group-II atoms and oxygen atoms, and temperature of crystal growth, so as to suppress crystal growth in the lateral direction on the surface of the substrate.

Abstract: The present invention provides a semiconductor optical element array including: a semiconductor substrate having a main surface in which a plurality of concave portions is formed; a mask pattern that is formed on the main surface of the semiconductor substrate and includes a plurality of opening portions provided immediately above the plurality of concave portions; a plurality of fine columnar crystals that is made of a group-III nitride semiconductor grown from the plurality of concave portions to the upper side of the mask pattern through the plurality of opening portions; an active layer that is grown on each of the plurality of fine columnar crystals; and a semiconductor layer covering each of the active layers.