Abstract: An antenna system applied in the metal back cover of a 5G mobile terminal contains a metal back cover, a feeder line and at least one antenna element. The metal back cover is composed of a bottom case & a frame. The antenna element is composed of a feed screw, a pillar, a insulating sleeve and a reflecting cavity. The reflecting cavity is formed by the inner concave of the outer side of the metal frame. The reflecting cavity includes the first wall and the second wall distributed from bottom to top. The first wall is a part of the bottom case. The first wall, the pillar, the second wall and the feeder line are arranged orderly and are connected with the feed screw. The pillar and the feed screw are connected by screw thread. The feed screw is connected with the second wall through an insulating sleeve.

Abstract: According to one embodiment, a millimeter-wave (mm-wave) frontend integrated circuit includes an array of mm-wave transceivers, where each of the mm-wave transceivers transmits and receives coherent mm-wave signals with variable amplitudes and phase shifts. The mm-wave frontend IC chip further includes a wideband frequency synthesizer coupled to the mm-wave transceivers. The full-based or wideband frequency synthesizer generates and provides a local oscillator (LO) signal to each of the mm-wave transceivers to enable the mm-wave transceiver to mix, modulate, and/or demodulate mm-wave signals. The array of mm-wave wideband transceivers and the wideband frequency synthesizer may be implemented within a single IC chip as a single mm-wave frontend IC chip or package.

Abstract: According to one embodiment, an RF frontend IC device includes a first RF transceiver to transmit and receive RF signals within a first predetermined frequency band and a second RF transceiver to transmit and receive RF signals within a second predetermined frequency band. The RF frontend IC device further includes a frequency synthesizer coupled to the first and second RF transceivers to perform frequency synthetization in a wide frequency spectrum, including the first and second frequency bands. The frequency synthesizer generates a first LO signal and a second LO signal for the first RF transceiver and the second RF transceiver to enable the first RF transceiver and the second RF transceiver to transmit and receive RF signals within the first frequency band the second frequency band respectively. The first RF transceiver, the second RF transceiver, and the frequency synthesizer are integrated within a single IC chip.

Abstract: According to one embodiment, a frequency doubler circuit includes a first field effect transistor (FET) having a first gate, a first source, and a first drain and a second FET having a second gate, a second source, and a second drain, where the first gate of the first FET and the second source of the second FET are driven by an input signal in a first phase, and the first source of the first FET and the second gate of the second FET are driven by the input signal in a second phase, where the first and the second FETs are caused to switch based on the first phase and the second phase of the input signal respectively to generate an output signal at the first drain and the second drain having a frequency that is approximately double of the input signal.

Abstract: According to one embodiment, an RF frontend IC device includes a first RF transceiver to transmit and receive RF signals within a first predetermined frequency band and a second RF transceiver to transmit and receive RF signals within a second predetermined frequency band. The RF frontend IC device further includes a full-band frequency synthesizer coupled to the first and second RF transceivers to perform frequency synthetization in a wide frequency spectrum, including the first and second frequency bands. The full-band frequency synthesizer generates a first LO signal and a second LO signal for the first RF transceiver and the second RF transceiver to enable the first RF transceiver and the second RF transceiver to transmit and receive RF signals within the first frequency band the second frequency band respectively. The first RF transceiver, the second RF transceiver, and the full-band frequency synthesizer are integrated within a single IC chip.