Patents Assigned to Spire Corporation
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Patent number: 9250122Abstract: A compact solar simulator includes a target surface for a solar module, an enclosure behind the target surface, and at least one source fixture including a lamp in the enclosure spaced from the target surface. Diffusing surfaces about the source fixture diffuse radiation emitted by the lamp. Specular reflectors are positioned to steer the diffused radiation to the target surface and are oriented to create a uniform intensity distribution across the target surface. Moreover, the surface area of any desired filters is reduced and any longitudinal non-uniform intensity distribution of the lamp is corrected.Type: GrantFiled: November 7, 2011Date of Patent: February 2, 2016Assignee: Spire CorporationInventor: Harvey B. Serreze
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Patent number: 8981205Abstract: A photovoltaic module comprises at least one string of back contact solar cells and a porous non-conductive layer behind the cells including thereon flexible conductive pathways electrically interconnecting the solar cells. There is a back sheet and an encapsulant between the back sheet and the porous non-conductive layer flowable through the porous non-conductive layer and bonding the back sheet to the solar cells.Type: GrantFiled: January 26, 2011Date of Patent: March 17, 2015Assignee: Spire CorporationInventor: Michael J. Nowlan
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Patent number: 8736272Abstract: An adjustable spectrum LED solar simulator method and system which provides power to LEDs, senses the LED output, compares the LED output to a predetermined norm, and adjusts the LED outputs accordingly. An adjustable spectrum LED solar simulator system includes a multiplicity of LEDs of a number of different color wavelength ranges, an LED driver system for providing power to the LEDs, a sensor system for sensing the output of the LEDs and a controller responsive to the sensor system for comparing the color spectrum of the output of the LEDs to a desired solar spectrum and enables the driver system to adjust the power to the LEDs to more closely match the desired solar spectrum. The solar simulator system may include a modulator structure of hierarchical assemblies. Solar simulator calibration is also disclosed.Type: GrantFiled: November 30, 2011Date of Patent: May 27, 2014Assignee: Spire CorporationInventors: Kurt J. Linden, William R. Neal, Harvey Serreze
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Publication number: 20130328587Abstract: An LED based solar simulator and method. An emitter plane includes an array of quarter panels below a test plane. Each quarter panel includes multiple close pitch LEDs of different wavelengths in an array, a plurality of LEDs for select wavelengths per quarter panel, and one or more different wavelength LEDs in a plurality of class A wavelength intervals in order to more closely match the solar spectrum.Type: ApplicationFiled: May 17, 2013Publication date: December 12, 2013Applicant: Spire CorporationInventors: Kurt J. Linden, William R. Neal, Harvey B. Serreze
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Patent number: 8242009Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.Type: GrantFiled: June 3, 2011Date of Patent: August 14, 2012Assignee: Spire CorporationInventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
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Patent number: 8052291Abstract: A solar simulator filter includes filter material configured to achieve class A performance for the spectral output of the optical source except between about 900 and 1,100 nm. Openings in the filter material increase the average effective transmittance between about 900 and 1,100 nm to achieve class A performance for the spectral output of the source.Type: GrantFiled: February 18, 2009Date of Patent: November 8, 2011Assignee: Spire CorporationInventor: Harvey B. Serreze
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Patent number: 8003551Abstract: The present invention provides means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to light excitation. Semiconductor nanostructures can be produced by generating a porous layer in semiconductor substrate comprising a network of nanostructures. Prior or subsequent to cleavage from the substrate, the nanostructures can be activated by an activation means such as exposing their surfaces to a plasma, oxidation or ion implantation. In some embodiments, the surface activation renders the nanostructures more hydrophilic, thereby facilitating functionalization of the nanoparticles for either in vitro or in vivo use.Type: GrantFiled: April 27, 2009Date of Patent: August 23, 2011Assignee: Spire CorporationInventors: Nader Montazernezam Kalkhoran, James G. Moe, Kurt J. Linden, Marisa Sambito
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Patent number: 7955965Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.Type: GrantFiled: August 6, 2010Date of Patent: June 7, 2011Assignee: Spire CorporationInventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
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Patent number: 7772612Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.Type: GrantFiled: February 19, 2009Date of Patent: August 10, 2010Assignee: Spire CorporationInventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
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Patent number: 7771773Abstract: The present invention provides orthopedic prosthesis having at least one metallic component that includes a metallic substrate on which an integrally formed nano-crystalline coating is formed. The coating and the substrate have at least one metallic constituent in common having an average atomic concentration in the coating that differs from an average atomic concentration in the substrate by less than about 10 percent. Further, the nano-crystalline coatings includes crystalline grains with an average size in a range of about 1 to 999 nanometers, and more preferably in a range of about 10 to 200 nanometers. A transition region that exhibits a graded reduction in average grain size separates the coating from the substrate. The coating advantageously exhibits an enhanced hardness, and a high degree of resistance to corrosion and wear. In one application, the nano-crystalline coatings of the invention are utilized to form articulating surfaces of various orthopedic devices.Type: GrantFiled: May 22, 2006Date of Patent: August 10, 2010Assignee: Spire CorporationInventor: Fereydoon Namavar
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Patent number: 7759257Abstract: Methods are disclosed generally directed to design and synthesis of quantum dot nanoparticles having improved uniformity and size. In a preferred embodiment, a release layer is deposited on a semiconductor wafer. A heterostructure is grown on the release layer using epitaxial deposition techniques. The heterostructure has at least one layer of quantum dot material, and optionally, one or more layers of reflective Bragg reflectors. A mask is deposited over a top layer and reactive ion-beam etching applied to define a plurality of heterostructures. The release layer can be dissolved releasing the heterostructures from the wafer. Some exemplary applications of these methods include formation of fluorophore materials and high efficiency photon emitters, such as quantum dot VCSEL devices. Other applications include fabrication of other optoelectronic devices, such as photodetectors.Type: GrantFiled: December 6, 2007Date of Patent: July 20, 2010Assignee: Spire CorporationInventor: Kurt J. Linden
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Patent number: 7687256Abstract: The present invention provides substrates having a plurality of micro-locations on its surface. Each micro-location has an effective dose of an ion beam treatment such that the plurality of the micro-locations exhibit an affinity to a compound that is different from the affinity of the remainder of the substrate surface to that compound. The substrates of the invention can be utilized to form microarrays of biological molecules, such as oligonucleotides or peptides. Such microarrays can find a variety of applications. For example, they can be employed in large scale hybridization assays in many genetic applications, such as mapping of genomes, monitoring of gene expression, DNA sequencing, genetic diagnosis, and genotyping of organisms.Type: GrantFiled: April 11, 2002Date of Patent: March 30, 2010Assignee: Spire CorporationInventor: Roger G. Little
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Patent number: 7524776Abstract: Means and methods for producing surface-activated semiconductor nanoparticles suitable for in vitro and in vivo applications that can fluoresce in response to light excitation. Semiconductor nanostructures can be produced by generating a porous layer in semiconductor substrate comprising a network of nanostructures. Prior or subsequent to cleavage from the substrate, the nanostructures can be activated by an activation means such as exposing their surfaces to a plasma, oxidation or ion implantation. In some embodiments, the surface activation renders the nanostructures more hydrophilic, thereby facilitating functionalization of the nanoparticles for either in vitro or in vivo use.Type: GrantFiled: November 30, 2004Date of Patent: April 28, 2009Assignee: Spire CorporationInventors: Nader M. Kalkhoran, James G. Moe, Kurt J. Linden, Marisa Sambito
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Patent number: 7514725Abstract: The present invention provides nanophotovoltaic devices having sizes in a range of about 50 nm to about 5 microns, and method of their fabrication. In some embodiments, the nanophotovoltaic device includes a semiconductor core, e.g., formed of silicon, sandwiched between two metallic layers, one of which forms a Schottky barrier junction with the semiconductor core and the other forms an ohmic contact therewith. In other embodiment, the nanophotovoltaic device includes a semiconductor core comprising a p-n junction that is sandwiched between two metallic layers forming ohmic contacts with the core.Type: GrantFiled: November 30, 2004Date of Patent: April 7, 2009Assignee: Spire CorporationInventors: Steven J. Wojtczuk, James G. Moe, Roger G. Little
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Patent number: 7306963Abstract: Methods are disclosed generally directed to design and synthesis of quantum dot nanoparticles having improved uniformity and size. In a preferred embodiment, a release layer is deposited on a semiconductor wafer. A heterostructure is grown on the release layer using epitaxial deposition techniques. The heterostructure has at least one layer of quantum dot material, and optionally, one or more layers of reflective Bragg reflectors. A mask is deposited over a top layer and reactive ion-beam etching applied to define a plurality of heterostructures. The release layer can be dissolved releasing the heterostructures from the wafer. Some exemplary applications of these methods include formation of fluorophore materials and high efficiency photon emitters, such as quantum dot VCSEL devices. Other applications include fabrication of other optoelectronic devices, such as photodetectors.Type: GrantFiled: November 30, 2004Date of Patent: December 11, 2007Assignee: Spire CorporationInventor: Kurt J. Linden
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Patent number: 7048767Abstract: The present invention provides orthopedic prosthesis having at least one metallic component that includes a metallic substrate on which an integrally formed nano-crystalline coating is formed. The coating and the substrate have at least one metallic constituent in common having an average atomic concentration in the coating that differs from an average atomic concentration in the substrate by less than about 10 percent. Further, the nano-crystalline coatings includes crystalline grains with an average size in a range of about 1 to 999 nanometers, and more preferably in a range of about 10 to 200 nanometers. A transition region that exhibits a graded reduction in average grain size separates the coating from the substrate. The coating advantageously exhibits an enhanced hardness, and a high degree of resistance to corrosion and wear. In one application, the nano-crystalline coatings of the invention are utilized to form articulating surfaces of various orthopedic devices.Type: GrantFiled: June 11, 2002Date of Patent: May 23, 2006Assignee: Spire CorporationInventor: Fereydoon Namavar
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Patent number: 6661875Abstract: The present invention provides a catheter having an x-ray generator unit at its tip which generates x-ray radiation having a wavelength in a range effective for treating biological tissue. In one embodiment, the x-ray generator unit includes a miniature x-ray generator and a miniature transformer that form, in combination, a monolithic device. The transformer includes a primary winding that receives an input voltage in a range of 100 V to 4 kV from a power source, via a flexible cable that runs from the proximal end of the catheter body to its distal end. The transformer further includes a secondary winding that up-converts the input voltage to generate an output voltage in a range of 10 kV to 40 kV to be applied to a cathode of the x-ray generator. The cathode emits electrons in response to the applied voltage, and an extraction electrode guides the emitted electrons to an anode, which is preferably formed of a high-Z refractory metal.Type: GrantFiled: May 9, 2002Date of Patent: December 9, 2003Assignee: Spire CorporationInventors: Anton C. Greenwald, Ward D. Halverson
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Publication number: 20030210765Abstract: The present invention provides a catheter having an x-ray generator unit at its tip which generates x-ray radiation having a wavelength in a range effective for treating biological tissue. In one embodiment, the x-ray generator unit includes a miniature x-ray generator and a miniature transformer that form, in combination, a monolithic device. The transformer includes a primary winding that receives an input voltage in a range of 100 V to 4 kV from a power source, via a flexible cable that runs from the proximal end of the catheter body to its distal end. The transformer further includes a secondary winding that up-converts the input voltage to generate an output voltage in a range of 10 kV to 40 kV to be applied to a cathode of the x-ray generator. The cathode emits electrons in response to the applied voltage, and an extraction electrode guides the emitted electrons to an anode, which is preferably formed of a high-Z refractory metal.Type: ApplicationFiled: May 9, 2002Publication date: November 13, 2003Applicant: Spire CorporationInventors: Anton C. Greenwald, Ward D. Halverson
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Patent number: 6635559Abstract: The present invention provides methods and apparatus for creating insulating layers in Group III-V compound semiconductor structures having aluminum oxide with a substantially stoichiometric compositions. Such insulating layers find applications in a variety of semiconductor devices. For example, in one aspect, the invention provides vertical insulating layers separating two devices, such as photodiodes, formed on a semiconductor substrate from one another. In another aspect, the invention can provide such insulating layers as buried horizontal insulating layers of semiconductor devices.Type: GrantFiled: September 6, 2001Date of Patent: October 21, 2003Assignee: Spire CorporationInventors: Anton C. Greenwald, Nader Montazernezam Kalkhoran
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Patent number: 6217615Abstract: A synovial prosthetic member includes a body having an articulating surface and an anchor surface, the articulating surface being configured for articulation with another articulating surface of a synovial joint, the anchor surface being configured for cementing to bone, the body being composed of ultrahigh molecular weight polyethylene (UHMWPE), the anchor surface having been subjected to treatment by either ion implantation, ion beam assisted deposition, or sputter deposition.Type: GrantFiled: April 18, 2000Date of Patent: April 17, 2001Assignee: Spire CorporationInventors: Piran Sioshansi, Raymond J. Bricault, Jr.